OPB1104 KODENSHI | Alldatasheet

Document overview

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Technical content

  1. Structure 1.1 Chip Size : 0.42mm X 1.17mm

1.2 Chip thickness : 280±20um

1.3 Metallization : Top - Al, Bottom - Au

1.4 Passivation : Silicon Nitride

1.5 Bonding Pad Size

  • Emitter : 130um - Base : 60um X 60um 1.6 Active Area : 0.31mm X 0.46mm 2. Guaranteed Probed Electrical Characteristics (Ta=25℃) Symbol Min Typ Max Unit ICEO 100 nA λ 450 1100 nm λp 880 nm BVCEO 30 V BVCBO 40 V BVEBO 6V BVECO 5V VCES 300 mV hFE 500 2500 - 3. Hfe Bin Grade MIN MAX 500 1,000 800 1,400 1,300 2,500 4. Maximum Ratings (Ta=25℃) Symbol Rating Unit VCEO 30 V VECO 5V Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr Bin Grade A C-B Voltage IEC=50uA IEB=50uA ICB=50uA C-E Voltage ICE=500uA VCE=10V, Ic=1mA AUK Corp. C-E Saturation Voltage E-B Voltage Parameter B C Emitter-Collector Voltage Collector-Emitter Voltage DC Current Gain IC=5mA, IB=1mA OPB1104 VCE=10V ConditionParameter C-E Leakage Current E-C Voltage Spectrum Sensitivity Peak Sensing Wavelength