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Document overview
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Technical content
The OPB100Z series consists of an infrared LED (OPB100-EZ) and phototransistor (OPB100-SZ) in separate plastic housings. The low cost, snap-in design requires no screws or other mounting hardware for ease of installation. The emitter and sensor are not apertured, which allows separation distances in excess of 36” (91.4 cm) without concern for precise alignment. The front side clip allows mounting of the product to any 0.059” (1.50 mm) thick material. This product is designed for general switching and low-speed data communications applications. Non-contact reflective object Non-contact interruptive sensing Assembly line automation Machine automation Machine safety Infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” (91.4 cm) Low profile package 24” (61.0 cm) wire leads Emitter (LED) Phototransistor Symbolize Cover 26 AWG UL Rated
Ordering Information
OPB100-EZ 880 nm 24" / 26 AWG Wire OPB100-SZ Transistor OPB100Z Contains both OPB100-EZ & OPB100-SZ Hole Pattern Hole Pattern Red Black White Green Hole Pattern Ø0.190 [Ø4.83]
Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Storage Temperature Range -40o C to +85o C Operating Temperature Range(1) -40o C to +80o C Input LED (OP298 for additional information) Forward DC Current 100 mA Peak Forward Current (1 μs pulse width, 300 pps) 1 A Reverse DC Voltage 2 V Power Dissipation(2) 142 mW Output Phototransistor (OP598 for additional information) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Collector DC Current 50 mA Power Dissipation(3) 250 mW Electrical Characteristics (TA = 25° C unless otherwise noted) Input Diode (See OP298 for additional information — for reference only) VF Forward Voltage - - 1.7 V IF = 20 mA IR Reverse Current - - 15 μA VR= 10 V qHP Emission Angle at Half Power Points - 25 - Degree IF = 20 mA EE (APT) Apertured Radiant Intensity 6.5 - - mW/ cm2 IF = 100 mA Distance = 1.43” (3.63 cm) Aperture = 0.25” (6.35 mm) Output Phototransistor (See OP598 for additional information — for reference only) V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V IC = 1 mA, EE = 0mw/cm2 (no light) V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IC = 100 μA, EE = 0mw/cm2 (no light) ICEO Collector Dark Current - - 100 nA VCE = 10V, IF = 0, EE = 0 mw/cm2 (no light) VCE(SAT) Collector-Emitter Saturation Voltage - - 0.4 V IC = 400 μA, EE = 1.7 mw/cm2 IC(ON) On-State Collector Current 5 - - mA VCE = 5 V, EE = 1.7 mw/cm2 Notes: 1. Derate linearly 3.33 mW/°C above 25°C. 2. All parameters measured using pulse technique. 3. Derate linearly 1.43 mW/°C above 25°C.
Output Current vs. Distance 0.01 0.1 100 1 2 3 4 5 6 7 8 9 10 11 12 Distance (inches) Typical Output Current (mA) IF=20 mA IF=50 mA