OPB0422 KODENSHI | Alldatasheet

Document overview

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Technical content

  1. Structure 1.1 Chip Size : 0.415mm X 0.415mm

1.2 Chip thickness : 180±15um

1.3 Metallization : Top - Al, Bottom - Au

1.4 Passivation : Silicon Nitride

1.5 Bonding Pad Size

  • Emitter : 138um X 138um - Base : 70um X 70um 2. Guaranteed Probed Electrical Characteristics (Ta=25℃) Symbol Min Typ Max Unit ICEO 50 nA λ 500 1,050 nm λp 880 nm BVCEO 90 V BVCBO 100 V BVEBO 6.7 V BVECO 7.1 V VCES 200 mV hFE 700 1,500 - 3. Absolute Maximum Ratings (Ta=25℃) Symbol Rating Unit VCEO 90 V VECO 7.1 V Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr IEB=50uA ICB=50uA VCE=10V, Ic=1mA AUK Corp. C-E Saturation Voltage E-B Voltage Parameter Emitter-Collector Voltage Collector-Emitter Voltage DC Current Gain OPB0422 Vce=20V ConditionParameter C-E Leakage Current Peak Sensing Wavelength IC=5mA, IB=1mA ICE=500uA E-C Voltage Spectrum Sensitivity C-E Voltage C-B Voltage IEC=50uA