OP90AZ/883

OP90 AD | Alldatasheet

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REV.A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. a OP90 Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002 Precision Low-Voltage Micropower Operational Amplifier PIN CONNECTIONS 8-Lead Hermetic DIP (Z-Suffix) 8-Lead Epoxy Mini-DIP (P-Suffix) 8-Lead SO (S-Suffix) NC = NO CONNECT VOS NULL –IN +IN NC OUT VOS NULLV–

FEATURES

Single/Dual Supply Operation: 1.6 V to 36 V, /H115500.8 V to /H1155018 V True Single-Supply Operation; Input and Output Voltage Ranges Include Ground Low Supply Current: 20 /H9262A Max High Output Drive: 5 mA Min Low Input Offset Voltage: 150 /H9262V Max High Open-Loop Gain: 700 V/mV Min Outstanding PSRR: 5.6 /H9262V/V Max Standard 741 Pinout with Nulling to V– GENERAL DESCRIPTION The OP90 is a high performance, micropower op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ± 0.8 V to ± 18 V. The input voltage range includes the negative rail allowing the OP90 to accommodate input signals down to ground in a single-supply operation. The OP90’s output swing also includes a ground when operating from a single-supply, enabling “zero-in, zero-out” operation. The OP90 draws less than 20 µA of quiescent supply current, while able to deliver over 5 mA of output current to a load. The input offset voltage is below 150 µV eliminating the need for *ELECTRONICALL Y ADJUSTED ON CHIP FOR MINIMUM OFFSET VOL T AGE NULL NULL –IN +IN OUTPUT Figure 1. Simplied Schematic enced in battery-powered systems. remote sensors, and satellites.

REV. A–2– OP90 (VS = /H115501.5 V to /H1155015 V, TA = 25/H11543C, unless otherwise noted.) OP90A/E OP90G Parameter Symbol Conditions Min Typ Max Min Typ Max Unit INPUT OFFSET VOLTAGE V OS 50 150 125 450 µV INPUT OFFSET CURRENT I OS VCM = 0 V 0.4 3 0.4 5 nA INPUT BIAS CURRENT I B VCM = 0 V 4.0 15 4.0 25 nA LARGE-SIGNAL V S = ± 15 V, VO = ± 10 V VOLTAGE GAIN A VO RL = 100 kΩ 700 1200 400 800 V/mV AVO RL= 10 kΩ 350 600 200 400 V/mV AVO RL = 2 kΩ 125 250 100 200 V/mV

1 V < VO < 4 V

AVO RL = 100 kΩ 200 400 100 250 V/mV AVO RL = 10 kΩ 100 180 70 140 V/mV INPUT VOLTAGE RANGE1 IVR V+ = 5 V, V– = 0 V 0/4 0/4 V OUTPUT VOLTAGE SWING V O VS = ± 15 V RL = 10 kΩ± 14 ± 14.2 ± 14 ± 14.2 V RL = 2 kΩ± 11 ± 12 ± 11 ± 12 V VOH V+ = 5 V, V– = 0 V R L = 2 kΩ 4.0 4.2 4.0 4.2 V VOL V+ = 5 V, V– = 0 V RL = 10 kΩ 100 500 100 500 µV COMMON-MODE CMR V+ = 5 V, V– = 0 V, REJECTION 0 V < V CM < 4 V 90 110 80 100 dB CMR V S = ± 15 V, –15 V < VCM < 13.5 V 100 130 90 120 dB POWER SUPPLY REJECTION RATIO PSRR 1.0 5.6 3.2 10 µV/V SLEW RATE SR V S = ± 15 V 5 12 5 12 V/ms SUPPLY CURRENT I SY VS = ± 1.5 V 9 15 9 15 µA ISY VS = ± 15 V 14 20 14 20 µA CAPACITIVE LOAD A V = 1 STABILITY2 No Oscillations 250 650 250 650 pF INPUT NOISE VOLTAGE e n p-p fO = 0.1 Hz to 10 Hz VS = ± 15 V 3 3 µV p-p INPUT RESISTANCE DIFFERENTIAL MODE R IN VS = ± 15 V 30 30 M Ω INPUT RESISTANCE COMMON-MODE R INCM VS = ± 15 V 20 20 G Ω NOTES 1Guaranteed by CMR test. 2Guaranteed but not 100% tested. Specifications subject to change without notice.

ELECTRICAL CHARACTERISTICS

–SPECIFICATIONS

REV. A –3– OP90 (VS = /H115501.5 V to /H1155015 V, –55 /H11543C /H11349 TA /H11349 +125/H11543C, unless otherwise noted.) Parameter Symbol Conditions Min Typ Max Unit INPUT OFFSET VOLTAGE V OS 80 400 µV AVERAGE INPUT OFFSET VOLTAGE DRIFT TCV OS 0.3 2.5 µV/°C INPUT OFFSET CURRENT I OS VCM = 0 V 1.5 5 nA INPUT BIAS CURRENT I B VCM = 0 V 4.0 20 nA LARGE-SIGNAL VOLTAGE GAIN A VO VS = ± 15 V, VO = ± 10 V RL = 100 kΩ 225 400 V/mV RL = 10 kΩ 125 240 V/mV RL = 2 kΩ 50 110 V/mV AVO V+ = 5 V, V– = 0 V,

1 V < V

O < 4 V RL = 100 kΩ 100 200 V/mV RL = 10 kΩ 50 110 V/mV INPUT VOLTAGE RANGE* IVR V+ = 5 V, V– = 0 V 0/3.5 V VS = ± 15 V –15/13 5 V OUTPUT VOLTAGE SWING V O VS = ± 15 V RL = 10 kΩ± 13.5 ± 13.7 V RL = 2 kΩ± 10.5 ± 11.5 V VOH V+ = 5 V, V– = 0 V R L = 2 kΩ 3.9 4.1 V VOL V+ = 5 V, V– = 0 V RL = 10 kΩ 100 500 µV COMMON-MODE REJECTION CMR V+ = 5 V, V– = 0 V, 0 V < VCM < 3.5 V 85 105 dB VS = ± 15 V, 15 V < VCM < 13.5 V 95 115 dB POWER SUPPLY REJECTION RATIO PSRR 3.2 10 µV/V SUPPLY CURRENT I SY VS = ± 1.5 V 15 25 µA VS = ± 15 V 19 30 µA NOTE *Guaranteed by CMR test.

REV. A–4– OP90 OP9OE OP9OG Parameter Symbol Conditions Min Typ Max Min Typ Max Unit INPUT OFFSET VOLTAGE V OS 70 270 180 675 µV AVERAGE INPUT OFFSET VOLTAGE DRIFT TCV OS 0.3 2 1.2 5 µV/°C INPUT OFFSET CURRENT I OS VCM = 0 V 0.8 3 1.3 7 nA INPUT BIAS CURRENT I B VCM = 0 V 4.0 15 4.0 25 nA LARGE-SIGNAL A VO VS = ± 15 V, VO = ± 10 V VOLTAGE GAIN R L = 100 kΩ 500 800 300 600 V/mV RL = 10 kΩ 250 400 150 250 V/mV RL = 2 kΩ 100 200 75 125 V/mV AVO V+ = 5 V, V– = 0 V, RL = 100 kΩ 150 280 80 160 V/mV RL = 10 kΩ 75 140 40 90 V/mV INPUT VOLTAGE RANGE* IVR V+ = 5 V, V– = 0 V 0/3.5 0/3.5 V OUTPUT VOLTAGE SWING V O VS = ± 15 V RL = 10 kΩ± 13.5 ± 14 ± 13.5 ± 14 V RL = 2 kΩ± 10.5 ± 11.8 ± 10.5 ± 11.8 V VOH V+ = 5 V, V– = 0 V RL = 2 kΩ 3.9 4.1 3.9 4.1 V VOL V+ = 5 V, V– = 0 V RL = 10 kΩ 100 500 100 500 µV COMMON-MODE CMR V+ = 5 V, V– = 0 V, REJECTION 0 V < V CM < 3.5 V 80 100 80 100 dB VS = ± 15 V, –15 V < VCM < 13.5 V 100 120 90 110 dB POWER SUPPLY REJECTION RATIO PSRR 10 5.6 5.6 17.8 µV/V SUPPLY CURRENT I SY VS = ± 1.5 V 13 25 12 25 µA VS = ± 15 V 17 30 16 30 µA NOTE *Guaranteed by CMR test. (VS = /H115501.5 V to /H1155015 V, –25 /H11543C /H11349 TA /H11349 +85/H11543C for OP90E/F, –40 /H11543C /H11349 TA /H11349 +85/H11543C for OP90G, unless otherwise noted.)

REV. A OP90 –5– ORDERING GUIDE Package Options TA = 25/H11543C Operating VOS Max CERDIP Plastic Temperature (mV) 8-Lead 8-Lead Range

150 OP90AZ/883 * MIL

150 OP90EZ * IND

450 OP90GP XIND

450 OP90GS XIND

*Not for new design, obsolete April 2002. ABSOLUTE MAXIMUM RATINGS 1 Differential Input Voltage . . . . [(V–) – 20 V] to [(V+) + 20 V] Storage Temperature Range Operating Temperature Range Junction Temperature (T CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP90 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE Package Type /H9258JA 2 /H9258JC Unit 8-Lead Hermetic DIP (Z) 148 16 °C/W 8-Lead Plastic DIP (P) 103 43 °C/W 8-Lead SO (S) 158 43 °C/W NOTES 1Absolute Maximum Ratings apply to packaged parts, unless otherwise noted. 2/H9258JA is specified for worst-case mounting conditions; i.e., /H9258JA is specified for device in socket for CerDIP, and P-DIP; /H9258JA is specified for devices soldered to printed circuit board for SO package.

REV. A OP90 –6– TEMPERA TURE – C INPUT OFFSET VOL T AGE – /H9262V 100 –75 –50 125 0 25 100 7550–25 VS = /H1155015V TPC 1. Input Offset Voltage vs. Temperature TEMPERA TURE – C SUPPL Y CURRENT – /H9262A –75 –50 125 0 25 100 7550–25 NO LOAD VS = /H115501.5V VS = /H1155015V TPC 4. Supply Current vs. Temperature FREQUENCY – Hz CLOSED-LOOP GAIN – dB –20 10 100k 1k 10k100 VS = /H1155015V TA = 25/H11543C TPC 7. Closed-Loop Gain vs. Frequency – Typical Performance Characteristics TEMPERA TURE – C INPUT OFFSET CURRENT – nA 1.6 0.2 –75 –50 125 0 25 100 0.8 1.0 0.4 7550–25 1.4 1.2 0.6 VS = /H1155015V TPC 2. Input Offset Current vs. Temperature SINGLE-SUPPL Y VOL T AGE – V OPEN-LOOP GAIN – V/mV 600 03 0 10 15 25 300 100 205 500 400 200 RL = 10k/H9024 TA = 25 C TA = 85 C TA = 125 C TPC 5. Open-Loop Gain vs. Single-Supply Voltage LOAD RESIST ANCE – /H9024 OUTPUT VOL T AGE SWING – V 100 100k 1k 10k V+ = 5V , V– = 0V TA = 25/H11543C TPC 8. Output Voltage Swing vs. Load Resistance TEMPERA TURE – C INPUT BIAS CURRENT – nA 4.2 4.0 3.0 –75 –50 125 0 25 100 3.6 3.8 3.4 7550–25 VS = /H1155015V 3.2 TPC 3. Input Bias Current vs. Temperature FREQUENCY – Hz OPEN-LOOP GAIN – dB 140 120 0.1 1 100k 10 100 10k 100 VS = /H1155015V TA = 25/H11543C RL = 100k/H9024 GAIN 135 180 PHASE SHIFT – DEG TPC 6. Open-Loop Gain and Phase Shift vs. Frequency LOAD RESIST ANCE – /H9024 OUTPUT SWING – V 100 100k 1k 10k TA = 25/H11543C VS = /H1155015V POSITIVE NEGA TIVE TPC 9. Output Voltage Swing vs. Load Resistance

REV. A –7– OP90 +18V –18V OP90 Figure 2. Burn-In Circuit

APPLICATION INFORMATION

Battery-Powered Applications The OP90 can be operated on a minimum supply voltage of 1.6 V, or with dual supplies ± 0.8 V, and draws only 14 pA of supply current. In many battery-powered circuits, the OP90 can be continuously operated for thousands of hours before requiring battery replacement, reducing equipment down time and operating cost. High-performance portable equipment and instruments frequently use lithium cells because of their long shelf-life, light weight, and high-energy density relative to older primary cells. Most lithium cells have a nominal output voltage of 3 V and are noted for a flat discharge characteristic. The low-supply voltage requirement of the OP90, combined with the flat discharge characteristic of the lithium cell, indicates that the OP90 can be operated over the entire useful life of the cell. Figure 1 shows the typical dis- charge characteristic of a 1Ah lithium cell powering an OP90 which, in turn, is driving full output swing into a 100 k Ω load. FREQUENCY – Hz POWER SUPPL Y REJECTION – dB 120 100 11 k 10 100 TA = 25/H11543C POSITIVE SUPPL Y NEGA TIVE SUPPL Y TPC 10. Power Supply Rejection vs. Frequency FREQUENCY – Hz CURRENT NOISE DENSITY – pA/ /H20857Hz 100 0.1 0.1 1k 11 0 VS = /H1155015V TA = 25/H11543C 100 TPC 13. Current Noise Density vs. Frequency FREQUENCY – Hz COMMON-MODE REJECTION – dB 140 120 11 k 10 100 VS = /H1155015V TA = 25/H11543C 100 TPC 11. Common-Mode Rejection vs. Frequency TA = 25/H11543C VS = /H1155015V AV = +1 RL = 10k/H9024 CL = 500pF TPC 14. Small-Signal Transient Response FREQUENCY – Hz NOISE VOL T AGE DENSITY – nV/ /H20857Hz 1000 0.1 1k 11 0 100 VS = /H1155015V TA = 25/H11543C 100 TPC 12. Noise Voltage Density vs. Frequency TA = 25/H11543C VS = /H1155015V AV = +1 RL = 10k/H9024 CL = 500pF TPC 15. Large-Signal Transient Response

Figure 7. Single Op Amp Full-Wave Rectifier Figure 8. Output of Full-Wave Rectifier with 4 Vp-p,

10 Hz Input

to 20 mA that is linearly proportional to the input voltage. Biasing for the current transmitter is provided by the REF-02EZ. giving a full-scale output of 20 mA with a 100 mV input. can provide up to 2 mA for transducer excitation. Figure 9. 2-Wire 4 mA to 20mA Transmitter

tor, which bypasses the current sense resistor, in the final result. proportional to tem perature and the two effects tend to track. Figure 12. Single-Supply Current Monitor

–12– C00321–0–1/02(A) PRINTED IN U.S.A. OUTLINE DIMENSIONS Dimensions shown in inches and (mm).

Revision History

9/01—Data Sheet changed from REV. 0 to REV. A. 8-Lead Soic Package (R-8) 0.0098 (0.25) 0.0075 (0.19) 0.0500 (1.27) 0.0160 (0.41) 0.0196 (0.50) 0.0099 (0.25) /H11547 45/H11543 8/H11543 0/H11543 0.102 (2.59) 0.094 (2.39) SEATING PLANE 0.0098 (0.25) 0.0040 (0.10) 0.0192 (0.49) 0.0138 (0.35) 0.1968 (5.00) 0.1890 (4.80) PIN 1 0.1574 (4.00) 0.1497 (3.80) 0.0500 (1.27) BSC 0.2440 (6.20) 0.2284 (5.80) 8-Lead PDIP Package (N-8) SEATING PLANE 0.060 (1.52) 0.015 (0.38)0.210 (5.33) MAX 0.022 (0.558) 0.014 (0.356) 0.160 (4.06) 0.115 (2.93) 0.070 (1.77) 0.045 (1.15) 0.130 (3.30) MIN PIN 1 0.280 (7.11) 0.240 (6.10) 0.100 (2.54) BSC 0.430 (10.92) 0.348 (8.84) 0.195 (4.95) 0.115 (2.93) 0.015 (0.381) 0.008 (0.204) 0.325 (8.25) 0.300 (7.62) 8-Lead Hermetic Package (Q-8) 1 4 0.310 (7.87) 0.220 (5.59)PIN 1 0.005 (0.13) MIN 0.055 (1.4) MAX 0.100 (2.54) BSC 15° 0.320 (8.13) 0.290 (7.37) 0.015 (0.38) 0.008 (0.20) SEATING PLANE 0.200 (5.08) MAX 0.405 (10.29) MAX 0.150 (3.81) MIN 0.200 (5.08) 0.125 (3.18) 0.023 (0.58) 0.014 (0.36) 0.070 (1.78) 0.030 (0.76) 0.060 (1.52) 0.015 (0.38)