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Technical content
The OP800 Series device consist of a NPN silicon phototransistor mounted in a hermetically sealed package. The narrow receiving angle provides excellent on-axis coupling. TO-18 package offer high power dissipation and hostile environment operation. The base lead is bonded to enable conventional transistor biasing. Industrial and commercial electronics Distance sensing Harsh environment Photointerrupters Narrow receiving angle Suitable for applications from 400nm to 1100 Variety of sensitivity ranges TO-18 hermetically sealed package Enhanced temperature range Base lead connection RoHS
Collector-Base Voltage 30 V Collector-Emitter Voltage 30 V Emitter-Base Voltage 5 V Emitter-Collector Voltage 5 V Continuous Collector Current 50 mA Storage Temperature Range -65o C to +150o C Operating Temperature Range -65o C to +125o C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C(2) Power Dissipation 250 mW(3) Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 2.5 mW/° C above 25° C. 3. Junction temperature maintained at 25° C. 4. Light source is a GaAIAs LED, 890 nm peak emission wavelength, providing a 0.5 mW/cm2 radiant intensity on the unit under test. The intensity level is not necessarily uniform over the lens area of the unit under test.
IC(ON) (3) On-State Collector Current OP800D OP800C OP800B OP800A 0.45 0.90 1.80 3.60 3.60 5.40 mA mA mA mA VCE = 5 V, EE = 0.5 mW/cm2(4 ) ICEO Collector Dark Current - - 100 nA VCE = 10 V, EE = 0 V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V IC = 100 µA V(BR)CBO Collector-Base Breakdown Voltage 30 - - V IC = 100 µA V(BR)ECO Emitter-Collector Breakdown Voltage 5.0 - - V IE = 100 µA V(BR)EBO Emitter-Base Breakdown Voltage 5.0 - - V IE = 100 µA tr Rise Time - 7.0 - µs VCC = 5 V, IC = 0.80 mA, RL = 100 Ω (See Test Circuit) tf Fall Time - 7.0 - µs