OP777ARZ-REEL

OP777_V01 AD | Alldatasheet

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Technical content

REV. Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. a OP777/OP727/OP747 Tel: 781/329-4700 www.analog.com Fax: © Analog Devices, Inc.,

FEATURES

Low Offset Voltage: 100 /H9262V Max Low Input Bias Current: 10 nA Max Single-Supply Operation: V to 30 V Dual-Supply Operation: /H11550 V to /H1155015 V Low Supply Current: 300 /H9262A/Amp Max Unity Gain Stable No Phase Reversal

APPLICATIONS

Current Sensing (Shunt) Line or Battery-Powered Instrumentation Remote Sensors Precision Filters OP727 SOIC Pin-Compatible with LT1013 GENERAL DESCRIPTION The OP777 , OP727 , and OP747 are precision single , dual, and quad rail-to-rail output single- supply amplifiers featuring micropower operation and rail-to-rail output ranges. These amplifier s provide improved performance over the industry -standard OP07 with ±15 V supplies , and offer the further advantage of true single-supply operation down to V , and smaller package options than any other high-voltage precision bipolar amplifier. Outputs are stable with capacitive loads of over 500 pF. Supply current is less than 300 μA per amplifier at 5 V. 500 Ω series resis- tors protect the inputs, allowing input signal levels several volts above the positive supply without phase reversal. Applications for these amplifiers include both line-powered and portable instrumentation, remote sensor signal conditioning, and precision filters. The OP777, OP727, and OP747 are specified over the extended industrial (–40 °C to +85 °C) temperature range. The OP777, single, is available in 8-lead MSOP and 8-lead SOIC packages. The OP747, quad, is available in 14-lead TSSOP and narrow 14-lead SO packages. Surface-mount devices in TSSOP and MSOP packages are available in tape and reel only. The OP727, dual, is available in 8-lead TSSOP and 8-lead SOIC packages. The OP727 8-lead SOIC pin configuration differs from the standard 8-lead operational amplifier pinout. FUNCTIONAL BLOCK DIAGRAMS 8-Lead MSOP (RM-8) /H11546IN /H11545IN V/H11546 OUT NC NC1 OP777 NC NC = NO CONNECT 8-Lead SOIC (R-8) /H11546IN V/H11546 +IN OUT NC NC NC NC = NO CONNECT OP777 8-Lead TSSOP (RU-8) TOP VIEW (Not to Scale) OUT A –IN A /H11545IN A V/H11545 OUT B –IN B /H11545IN B OP727 14-Lead SOIC (R-14) TOP VIEW (Not to Scale) –IN A /H11545IN A V/H11545 /H11545IN B –IN B OUT B OUT D –IN D /H11545IN D /H11545IN C –IN C OUT C OUT A OP747 14-Lead TSSOP (RU-14) TOP VIEW (Not to Scale) –IN A /H11545IN A V/H11545 /H11545IN B –IN B OUT B OUT D –IN D /H11545IN D /H11545IN C –IN C OUT C OUT A OP747 Precision Micropower Single-Supply Operational Amplifiers 8-Lead SOIC (R-8) TOP VIEW (Not to Scale) –IN B /H11545IN A V/H11545 OUT B –IN A OP727 /H11545IN B OUT A NOTE: THIS PIN CONFIGURATION DIFFERS FROM THE STANDARD 8-LEAD OPERATIONAL AMPLIFIER PINOUT. D 3.0 3.0 1.5 781/461-3113 SIMILAR LOW POWER PRODUCTS Supply Voltage/ Single AD8500 ADA4051-1 AD8505 AD8603/AD8613 ADA4528-1 Dual AD8502 ADA4051-2 AD8506 AD8607/AD8617 ADA4091-2 AD8622 Quad AD8504 AD8508 AD8609/AD8619 ADA4091-4 AD8624 2011

REV. –2– OP777/OP727/OP747–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage OP777 V OS +25 /H11034C < TA < +85/H11034C 20 100 μV –40°C < TA < +85°C 50 200 μV Offset Voltage OP727/OP747 +25 /H11034C < TA < +85/H11034C 30 160 μV –40°C < TA < +85°C 60 300 μV Input Bias Current I B –40°C < TA < +85°C 5.5 11 nA Input Offset Current I OS –40°C < TA < +85°C 0.1 2 nA Input Voltage Range 0 4 V Common-Mode Rejection Ratio CMRR V CM = 0 V to 4 V 104 110 dB Large Signal Voltage Gain A VO RL = 10 kΩ , VO = 0.5 V to 4.5 V 300 500 V/mV Offset Voltage Drift OP777 ΔVOS/ΔT –40 °C < TA < +85°C 0.3 1.3 μV/°C Offset Voltage Drift OP727/OP747 ΔVOS/ΔT –40 °C < TA < +85°C 0.4 1.5 μV/°C OUTPUT CHARACTERISTICS Output Voltage High V OH IL = 1 mA, –40°C to +85°C 4.88 4.91 V Output Voltage Low V OL IL = 1 mA, –40°C to +85°C 126 140 mV Output Circuit I OUT VDROPOUT < 1 V ±10 mA POWER SUPPLY Power Supply Rejection Ratio PSRR V S = 3 V to 30 V 120 130 dB Supply Current/Amplifier OP777 I SY VO = 0 V 220 270 μA –40°C < TA < +85°C 270 320 μA Supply Current/Amplifier OP727/OP747 V O = 0 V 235 290 μA –40°C < TA < +85°C 290 350 μA DYNAMIC PERFORMANCE Slew Rate SR R L = 2 kΩ 0.2 V/ μs Gain Bandwidth Product GBP 0.7 MHz NOISE PERFORMANCE Voltage Noise e np-p 0.1 Hz to 10 Hz 0.4 μV p-p Voltage Noise Density e n f = 1 kHz 15 nV/ √Hz Current Noise Density i n f = 1 kHz 0.13 pA/ √Hz NOTES Typical specifications: >50% of units perform equal to or better than the “typical” value. Specifications subject to change without notice. (@ VS = 5.0 V, VCM = 2.5 V, TA = 25/H11543C unless otherwise noted.) D

REV. –3– OP777/OP727/OP747 Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage OP777 V OS +25 °C < TA < +85°C 30 100 μV –40°C < TA < +85°C 50 200 μV Offset Voltage OP727/OP747 V OS +25 °C < TA < +85°C 30 160 μV –40°C < TA < +85°C 50 300 μV Input Bias Current I B –40°C < TA < +85°C5 1 0 n A Input Offset Current I OS –40°C < TA < +85°C 0.1 2 nA Input Voltage Range –15 +14 V Common-Mode Rejection Ratio CMRR V CM = –15 V to +14 V 110 120 dB Large Signal Voltage Gain A VO RL = 10 kΩ , VO = –14.5 V to +14.5 V 1,000 2,500 V/mV Offset Voltage Drift OP777 ΔVOS/ΔT –40 °C < TA < +85°C 0.3 1.3 μV/°C Offset Voltage Drift OP727/OP747 ΔVOS/ΔT –40 °C < TA < +85°C 0.4 1.5 μV/°C OUTPUT CHARACTERISTICS Output Voltage High V OH IL = 1 mA, –40°C to +85°C +14.9 +14.94 V Output Voltage Low V OL IL = 1 mA, –40°C to +85°C –14.94 –14.9 V Output Circuit I OUT ±30 mA POWER SUPPLY Power Supply Rejection Ratio PSRR V S = ± 1.5 V to ± 15 V 120 130 dB Supply Current/Amplifier OP777 I SY VO = 0 V 300 350 μA –40°C < TA < +85°C 350 400 μA Supply Current/Amplifier OP727/747 V O = 0 V 320 375 μA –40°C < TA < +85°C 375 450 μA DYNAMIC PERFORMANCE Slew Rate SR R L = 2 kΩ 0.2 V/ μs Gain Bandwidth Product GBP 0.7 MHz NOISE PERFORMANCE Voltage Noise e np-p 0.1 Hz to 10 Hz 0.4 μV p-p Voltage Noise Density e n f = 1 kHz 15 nV/ √Hz Current Noise Density i n f = 1 kHz 0.13 pA/ √Hz Specifications subject to change without notice. (@ /H1155015 V, VCM = 0 V, TA = 25/H11543C unless otherwise noted.) D

REV. OP777/OP727/OP747 –4– ABSOLUTE MAXIMUM RATINGS 1, 2 Storage Temperature Range Operating Temperature Range Junction Temperature Range Electrostatic Discharge (Human Body Model) . . . . 2000 V max Package Type /H9258JA 3 /H9258JC Unit 8-Lead MSOP (RM) 190 44 °C/W 8-Lead SOIC (R) 158 43 °C/W 8-Lead TSSOP (RU) 240 43 °C/W 14-Lead SOIC (R) 120 36 °C/W 14-Lead TSSOP (RU) 180 35 °C/W NOTES 1Absolute maximum ratings apply at 25 °C, unless otherwise noted. 2Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 3θJA is specified for worst-case conditions, i.e., θJA is specified for device soldered in circuit board for surface-mount packages. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP777/OP727/OP747 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE D

REV. –5– OP777/OP727/OP747Typical Performance Characteristics– OFFSET VOLTAGE – /H9262V 220 /H11546100/H1154680/H1154660 /H1154640/H1154620 0 20 40 60 80 100 200 160 120 140 100 180 VSY = /H1155015V VCM = 0V TA = 25/H11543C NUMBER OF AMPLIFIERS TPC 1. OP777 Input Offset Voltage Distribution TCVOS – /H9262V//H11543C QUANTITY – Amplifiers 200 100 180 140 VSY = /H1155015V VCM = 0V TA = –40/H11543C TO +85/H11543C 160 120 TPC 4. OP727/OP747 Input Offset Voltage Drift (TCVOS Distribution) OFFSET VOLTAGE – /H9262V 300 /H11546120 /H1154680 04 0 80 400 200 100 600NUMBER OF AMPLIFIERS /H1154640 120/H11546140 VSY = 5V VCM = 2.5V TA = 25/H11543C500 TPC 7. OP727 Input Offset Voltage Distribution OFFSET VOLTAGE – /H9262V 220 /H11546100/H1154680/H1154660 /H1154640/H1154620 0 20 40 60 80 100 200 160 120 140 100 180 VSY = 5V VCM = 2.5V TA = 25/H11543C NUMBER OF AMPLIFIERS TPC 2. OP777 Input Offset Voltage Distribution /H9262V QUANTITY – Amplifiers 600 400 300 200 VSY = /H1155015V VCM = 0V TA = 25/H11543C500 100 –120 –80 –40 0 40 80 120 TPC 5. OP747 Input Offset Voltage Distribution /H11546120/H11546140 OFFSET VOLTAGE – /H9262V 300 /H1154680 04 0 80/H1154640 120 400 200 100 500 600 VSY = /H1155015V VCM = 0V TA = 25/H11543C NUMBER OF AMPLIFIERS TPC 8. OP727 Input Offset Voltage Distribution INPUT OFFSET DRIFT – /H9262V//H11543C NUMBER OF AMPLIFIERS VSY = /H1155015V VCM = 0V TA = /H1154640/H11543C TO +85/H11543C TPC 3. OP777 Input Offset Voltage Drift Distribution OFFSET VOLTAGE – /H9262V NUMBER OF AMPLIFIERS 600 300 500 400 200 100 VSY = 5V VCM = 2.5V TA = 25/H11543C –120 –80 –40 0 40 80 120 TPC 6. OP747 Input Offset Voltage Distribution INPUT BIAS CURRENT – nA NUMBER OF AMPLIFIERS 3 84 5 6 7 VSY = /H1155015V VCM = 0V TA = 25/H11543C TPC 9. Input Bias Current Distribu tion D

REV. OP777/OP727/OP747 –6– LOAD CURRENT – mA /H9004OUTPUT VOLTAGE – mV 10k 100 0.001 0.01 100 0.1 1 10 1.0 VS = /H1155015V TA = 25/H11543C 0.1 SINK SOURCE TPC 10. Output Voltage to Supply Rail vs. Load Current TEMPERATURE – /H11543C SUPPLY CURRENT – /H9262A 500 /H11546500 /H1154660 /H1154640 140/H1154620 0 20 40 60 80 100 120 200 100 /H11546200 /H11546400 /H11546100 /H11546300 ISY+ (VSY = /H1155015V) ISY+ (VSY = 5V) 400 ISY/H11546 (VSY = 5V) ISY/H11546 (VSY = /H1155015V) 300 TPC 13. Supply Current vs. Temperature FREQUENCY – Hz 100 100k 100M1k 10k 1M 10M VSY = 5V CLOAD = 0 RLOAD = PHASE SHIFT – Degrees 135 180 225 270 OPEN-LOOP GAIN – dB 120 100 –20 –40 –60 140 TPC 16. Open Loop Gain and Phase Shift vs. Frequency LOAD CURRENT – mA /H9004OUTPUT VOLTAGE – mV 10k 100 00.001 0.01 100 0.1 1 10

1.0 SOURCE

VS = 5V TA = 25/H11543C 0.1 SINK TPC 11. Output Voltage to Supply Rail vs. Load Current SUPPLY VOLTAGE – V SUPPLY CURRENT – /H9262A 350 0 0 53 5 10 15 20 25 30 300 200 150 100 250 TA = 25/H11543C TPC 14. Supply Current vs. Supply VoltageCLOSED-LOOP GAIN – dB /H1154640 /H1154610 /H1154620 /H1154630 FREQUENCY – Hz 1k 10k 100M 100k 1M 10M VSY = /H1155015V CLOAD = 0 RLOAD = 2k/H9024 AV = /H11546100 AV = /H1154610 AV = +1 TPC 17. Closed Loop Gain vs. Frequency TEMPERATURE – /H11543C INPUT BIAS CURRENT – nA /H1154660 /H1154640 140/H1154620 0 20 40 60 80 100 120 VSY = /H1155015V TPC 12. Input Bias Current vs. Temperature FREQUENCY – Hz OPEN-LOOP GAIN – dB 120 100 –20 –40 –60 140 10 100k 100M100 1k 10k 1M 10M PHASE SHIFT – Degrees 135 180 225 270 VSY = /H1155015V CLOAD = 0 RLOAD = TPC 15. Open Loop Gain and Phase Shift vs. Frequency FREQUENCY – Hz 1k 10k 100M 100k 1M 10M VSY = 5V CLOAD = 0 RLOAD = 2k/H9024 AV = /H11546100 AV = /H1154610 AV = +1 CLOSED-LOOP GAIN – dB /H1154640 /H1154610 /H1154620 /H1154630 TPC 18. Closed Loop Gain vs. Frequency D

REV. –7– OP777/OP727/OP747 FREQUENCY – Hz OUTPUT IMPEDANCE – /H9024 300 270 240 210 180 150 120 100 100k 100M1k 10k 1M 10M VSY = 5V AV = 1 AV = 10 AV = 100 TPC 19. Output Impedance vs. Frequency TIME – 100/H9262s/DIV VOLTAGE – 1V/DIV VSY = /H1155015V RL = 2k/H9024 CL = 300pF AV = 1 TPC 22. Large Signal Transient Response CAPACITANCE – pF SMALL SIGNAL OVERSHOOT – % 11 0 1 k 100 VSY = /H115502.5V RL = 2k/H9024 VIN = 100mV /H11545OS /H11546OS TPC 25. Small Signal Overshoot vs. Load Capacitance FREQUENCY – Hz 100 100k 100M1k 10k 1M 10M VSY = /H1155015V AV = 1 AV = 10AV = 100 OUTPUT IMPEDANCE – /H9024 300 270 240 210 180 150 120 TPC 20. Output Impedance vs. Frequency TIME – 10/H9262s/DIV VOLTAGE – 50mV/DIV VSY = /H115502.5V CL = 300pF RL = 2k/H9024 VIN = 100mV AV = 1 TPC 23. Small Signal Transient Response CAPACITANCE – pF SMALL SIGNAL OVERSHOOT – % 1 10 10k 100 VSY = /H1155015V RL = 2k/H9024 VIN = 100mV +OS /H11546OS TPC 26. Small Signal Overshoot vs. Load Capacitance TIME – 100/H9262s/DIV VOLTAGE – 1V/DIV VSY = /H115502.5V RL = 2k/H9024 CL = 300pF AV = 1 TPC 21. Large Signal Transient Response TIME – 10/H9262s/DIV VOLTAGE – 50mV/DIV VSY = /H1155015V CL = 300pF RL = 2k/H9024 VIN = 100mV AV = 1 TPC 24. Small Signal Transient Response TIME – 40/H9262s/DIV INPUT OUTPUT VSY = /H1155015V RL = 10k/H9024 AV = /H11546100 VIN = 200mV +200mV /H1154610V TPC 27. Negative Overvoltage Recovery D

REV. OP777/OP727/OP747 –8– TIME – 40/H9262s/DIV INPUT OUTPUT VSY = /H1155015V RL = 10k/H9024 AV = /H11546100 VIN = /H11546200mV /H11546200mV 10V TPC 28. Positive Overvoltage Recovery TIME – 400/H9262s/DIV VOLTAGE – 5V/DIV INPUT OUTPUT VS = /H1155015V AV = 1 TPC 31. No Phase Reversal FREQUENCY – Hz PSRR – dB 10 10k 10M 140 120 100 100 1k 100k 1M +PSRR /H11546PSRR VSY = /H115502.5V TPC 34. PSRR vs. Frequency TIME – 40/H9262s/DIV INPUT OUTPUT 200mV VSY = /H115502.5V RL = 10k/H9024 AV = /H11546100 VIN = 200mV /H115462V TPC 29. Negative Overvoltage Recovery FREQUENCY – Hz CMRR – dB 10 10k 10M 140 120 100 100 1k 100k 1M VSY = /H115502.5V TPC 32. CMRR vs. Frequency FREQUENCY – Hz PSRR – dB 10 10k 10M 140 120 100 100 1k 100k 1M VSY = /H1155015V +PSRR /H11546PSRR TPC 35. PSRR vs. Frequency TIME – 40/H9262s/DIV INPUT OUTPUT VSY = /H115502.5V RL = 10k/H9024 AV = /H11546100 VIN = /H11546200mV /H11546200mV TPC 30. Positive Overvoltage Recovery FREQUENCY – Hz CMRR – dB 10 10k 10M 140 120 100 100 1k 100k 1M VSY = /H1155015V TPC 33. CMRR vs. Frequency TIME – 1s/DIV VOLTAGE – 1V/DIV VSY = 5V GAIN = 10M TPC 36. 0.1 Hz to 10 Hz Input Voltage Noise D

REV. –9– OP777/OP727/OP747 TIME – 1s/DIV VSY = /H1155015V GAIN = 10M VOLTAGE – 1V/DIV TPC 37. 0.1 Hz to 10 Hz Input Voltage Noise VSY = /H1155015V VOLTAGE NOISE DENSITY – nV/ Hz FREQUENCY – Hz 0 2.5k500 1k 1.5k 2.0k TPC 40. Voltage Noise Density TEMPERATURE – /H11543C SHORT CIRCUIT CURRENT – mA /H1154650 /H1154660/H1154640 140/H1154620 0 20 40 60 80 100 120 /H1154610 /H1154640 /H1154620 VSY = /H1155015V /H1154630 ISC/H11546 ISC+ TPC 43. Short Circuit Current vs. Temperature VOLTAGE NOISE DENSITY – nV/ Hz FREQUENCY – Hz 0 500100 200 300 400 VSY = /H1155015V TPC 38. Voltage Noise Density VSY = /H115502.5V VOLTAGE NOISE DENSITY – nV/ Hz FREQUENCY – Hz 0 2.5k500 1k 1.5k 2.0k TPC 41. Voltage Noise Density TEMPERATURE – /H11543C OUTPUT VOLTAGE HIGH – V 4.95 4.92 4.89 /H1154660 /H1154640 140/H1154620 0 20 40 60 80 100 120 4.94 4.93 4.91 4.90 VSY = 5V IL = 1mA TPC 44. Output Voltage High vs. Temperature VSY = /H115502.5V VOLTAGE NOISE DENSITY – nV/ Hz FREQUENCY – Hz 0 500100 200 300 400 TPC 39. Voltage Noise Density TEMPERATURE – /H11543C SHORT CIRCUIT CURRENT – mA /H1154650 /H1154660/H1154640 140/H1154620 0 20 40 60 80 100 120 /H1154610 /H1154640 /H1154620 VSY = 5V /H1154630 ISC/H11546 ISC+ TPC 42. Short Circuit Current vs. Temperature TEMPERATURE – /H11543C OUTPUT VOLTAGE LOW – mV /H1154660 /H1154640 140/H1154620 0 20 40 60 80 100 120 100 110 120 130 140 150 160 VSY = 5V IL = 1mA TPC 45. Output Voltage Low vs. Temperature D

0.65 BSC

1.10 MAX

Figure 12. 8-Lead Mini Small Outline Package [MSOP] REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure 13. 8-Lead Standard Small Outline Package [SOIC_N]

6.40 BSC

Figure 14. 8-Lead Thin Shrink Small Outline Package [TSSOP] REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure 15. 14-Lead Standard Small Outline Package [SOIC_N]

Figure 16. 14-Lead Thin Shrink Small Outline Package [TSSOP]

–16– REV. D

REVISION HISTORY

10/11—Rev. C to Rev. D Changed Single Supply Operation from 2.7 V to 30 V to Changed Dual Supply Operation from ±1.35 V to ±15 V to Changes to Supply Voltage Section, Input Common-Mode 9/01—Rev. B to Rev. C ©2011 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D02051-0-10/11(D)