OP496GSZ-REEL7

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REV. Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. a Operational Amplifiers OP196/OP296/OP496

FEATURES

Rail-to-Rail Input and Output Swing Low Power: 60 /H9262A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300 /H9262V max High Open-Loop Gain: 500 V/mV Unity-Gain Stable No Phase Reversal

APPLICATIONS

Portable Power Supply Control Portable Instrumentation GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera- tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to control battery charging. Their dynamic performance, including 26 nV/ √Hz voltage noise density, recommends them for battery-powered audio applica- tions. Capacitive loads to 200 pF are handled without oscillation. The OP196/OP296/OP496 are specified over the industrial (–40°C to +125°C) temperature range. 3 V operation is specified over the 0 °C to 125°C temperature range. The single OP196 and the dual OP296 are available in 8-lead 8-Lead Narrow-Body SO OP196 OUT A NULL NCNULL –IN A +IN A NC = NO CONNECT PIN CONFIGURATIONS 8-Lead Narrow-Body SO OP296 OUT A –IN A +IN A OUT B –IN B +IN B 14-Lead Narrow-Body SO OP496 OUT D –IN D +IN D +IN C –IN C OUT C OUT A –IN A +IN A +IN B –IN B OUT B 8-Lead TSSOP OP296 OUT A –IN A +IN A OUT B –IN B +IN B 4 5 14-Lead TSSOP (RU Suffix) OP496 OUT A –IN A +IN A OUT B –IN B +IN B OUT D –IN D +IN D OUT C +IN C –IN C 141 7 8 Tel: 781/329-4700 www.analog.com Fax: 781/ 14 of 14

OP196/OP296/OP496–SPECIFICATIONS ELECTRICAL SPECIFICATIONS Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS OP196G, OP296G, OP496G 35 300 µV –40°C ≤ TA ≤ +125°C 650 µV OP296H, OP496H 800 µV Input Bias Current I B –40°C ≤ TA ≤ +125°C ±10 ±50 nA Input Offset Current I OS ±1.5 ± 8n A Input Voltage Range VCM 05 .0 V Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 5.0 V, –40°C ≤ TA ≤ +125°C6 5 dB Large Signal Voltage Gain A VO RL = 100 kΩ, 0.30 V ≤ VOUT ≤ 4.7 V, –40°C ≤ TA ≤ +125°C 150 200 V/mV Long-Term Offset Voltage V OS G Grade, Note 1 550 µV H Grade, Note 1 1 mV Offset Voltage Drift ∆VOS/∆T G Grade, Note 2 1.5 µV/°C H Grade, Note 2 2 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High V OH IL = 100 µA 4.85 4.92 V IL = 1 mA 4.30 4.56 V IL = 2 mA 4.1 V Output Voltage Swing Low V OL IL = – 36 70 mV IL = –1 mA 350 550 mV IL = –2 mA 750 mV Output Current IOUT ± 4m A POWER SUPPLY Power Supply Rejection Ratio PSRR ±2.5 V ≤ VS ≤ ±6 V, –40°C ≤ TA ≤ +125°C8 5 d B Supply Current per Amplifier I SY VOUT = 2.5 V, RL = ∞ 60 µA –40°C ≤ TA ≤ +125°C4 5 8 0 µA DYNAMIC PERFORMANCE Slew Rate SR R L = 100 kΩ 0.3 V/ µs Gain Bandwidth Product GBP 350 kHz Phase Margin øm 47 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density en f = 1 kHz 26 nV/√Hz Current Noise Density in f = 1 kHz 0.19 pA/√Hz NOTES 1Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5 °C, with an LTPD of 1.3. 2Offset voltage drift is the average of the –40 °C to +25°C delta and the +25 °C to +125°C delta. Specifications subject to change without notice. –2– (@ VS = 5.0 V, VCM = 2.5 V, TA = 25/H11543C, unless otherwise noted.) REV.

Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS OP196G, OP296G, OP496G 35 300 µV 0°C ≤ TA ≤ 125°C 650 µV OP296H, OP496H 800 µV 0°C ≤ TA ≤ 125°C 1.2 mV Input Bias Current I B ± 10 ± 50 nA Input Offset Current I OS ± 1 ± 8n A Input Voltage Range VCM 0 3.0 V Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 3.0 V, 0°C ≤ TA ≤ 125°C6 0 dB Large Signal Voltage Gain AVO RL = 100 kΩ 80 200 V/mV Long-Term Offset Voltage V OS G Grade, Note 1 550 µV H Grade, Note 1 1 mV Offset Voltage Drift ∆VOS/∆T G Grade, Note 2 1.5 µV/°C H Grade, Note 2 2 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High V OH IL = 100 µA 2.85 V Output Voltage Swing Low VOL IL = –100 µA7 0 m V POWER SUPPLY Supply Current per Amplifier I SY VOUT = 1.5 V, RL = ∞ 40 60 µA 0°C ≤ TA ≤ 125°C8 0 µA DYNAMIC PERFORMANCE Slew Rate SR R L = 100 kΩ 0.25 V/ µs Gain Bandwidth Product GBP 350 kHz Phase Margin øm 45 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density en f = 1 kHz 26 nV/√Hz Current Noise Density in f = 1 kHz 0.19 pA/√Hz NOTES 1Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5 °C, with an LTPD of 1.3. 2Offset voltage drift is the average of the 0 °C to 25°C delta and the 25 °C to 125°C delta. Specifications subject to change without notice. OP196/OP296/OP496 REV. –3– (@ VS = 3.0 V, VCM = 1.5 V, TA = 25/H11543C, unless otherwise noted.) f

REV. –4– ELECTRICAL SPECIFICATIONS Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS OP196G, OP296G, OP496G 35 300 µV 0°C ≤ TA ≤ 125°C 650 µV OP296H, OP496H 800 µV 0°C ≤ TA ≤ 125°C 1.2 mV Input Bias Current IB –40°C ≤ TA ≤ +125°C ± 10 ± 50 nA Input Offset Current I OS ± 1 ± 8n A Input Voltage Range VCM 01 2 V Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 12 V, –40°C ≤ TA ≤ +125°C6 5 dB Large Signal Voltage Gain AVO RL = 100 kΩ 300 1000 V/mV Long-Term Offset Voltage V OS G Grade, Note 1 550 µV H Grade, Note 1 1 mV Offset Voltage Drift ∆VOS/∆T G Grade, Note 2 1.5 µV/°C H Grade, Note 2 2 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High V OH IL = 100 µA 11.85 V IL = 1 mA 11.30 V Output Voltage Swing Low V OL IL = – 70 mV IL = –1 mA 550 mV Output Current IOUT ± 4m A POWER SUPPLY Supply Current per Amplifier I SY VOUT = 6 V, RL = ∞ 60 µA –40°C ≤ TA ≤ +125°C8 0 µA Supply Voltage Range VS 31 2 V DYNAMIC PERFORMANCE Slew Rate SR RL = 100 kΩ 0.3 V/ µs Gain Bandwidth Product GBP 450 kHz Phase Margin øm 50 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density en f = 1 kHz 26 nV/√Hz Current Noise Density in f = 1 kHz 0.19 pA/√Hz NOTES 1Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5 °C, with an LTPD of 1.3. 2Offset voltage drift is the average of the –40 °C to +25°C delta and the +25 °C to +125 °C delta. Specifications subject to change without notice. (@ VS = 12.0 V, VCM = 6 V, TA = 25/H11543C, unless otherwise noted.)

REV. –5– ABSOLUTE MAXIMUM RATINGS 1 Storage Temperature Range Operating Temperature Range Junction Temperature Range Package Type /H9258JA 3 /H9258JC Unit 8-Lead SOIC 158 43 °C/W 8-Lead TSSOP 240 43 °C/W 14-Lead SOIC 120 36 °C/W 14-Lead TSSOP 180 35 °C/W NOTES 1Absolute maximum ratings apply to 2For supply voltages less than 15 V, the absolute maximum input voltage is equal to the supply voltage. 3θJA is specified for the worst case conditions CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP196/OP296/OP496 feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE

OP196/OP296/OP496–Typical Performance Characteristics REV. –6– INPUT OFFSET VOLTAGE – /H9262V 200 150 100 250 –250 250–200 QUANTITY – Amplifiers –150 –100 –50 0 50 100 150 200 VS = 3V TA = 25/H11543C COUNT = 400 TPC 1. Input Offset Voltage Distribution 200 150 100 250 –250 250–200 QUANTITY – Amplifiers –150 –100 –50 0 50 100 150 200 VS = 5V TA = 25/H11543C COUNT = 400 INPUT OFFSET VOLTAGE – /H9262V TPC 2. Input Offset Voltage Distribution INPUT OFFSET VOLTAGE – /H9262V 200 150 100 250 –250 250–200 QUANTITY – Amplifiers –150 –100 –50 0 50 100 150 200 VS = 12V TA = 25/H11543C COUNT = 400 TPC 3. Input Offset Voltage Distribution INPUT OFFSET DRIFT, TCVOS – /H9262V//H11543C –4.0 1.0–3.5 QUANTITY – Amplifiers VS = 5V VCM = 2.5V TA = –40/H11543C TO /H11545125/H11543C TPC 4. Input Offset Voltage Distribution (TCVOS) INPUT OFFSET DRIFT, TCVOS – /H9262V//H11543C –4.0 1.0–3.5 QUANTITY – Amplifiers VS = 12V VCM = 6V TA = –40/H11543C TO /H11545125/H11543C 1.5 TPC 5. Input Offset Voltage Distribution (TCVOS) TEMPERATURE – /H11543C INPUT OFFSET VOLTAGE – /H9262V 600 400 –400 –75 150–50 –25 0 25 50 75 100 125 200 –200 3V VS 12V VCM = VS TPC 6. Input Offset Voltage vs. Temperature

REV. –7– TEMPERATURE – /H11543C INPUT BAIS CURRENT – nA –75 150–50 –25 0 25 50 75 100 125 VS = 5V VCM = 2.5V TPC 7. Input Bias Current vs. Temperature SUPPLY VOLTAGE – V 21 2 3 INPUT BIAS CURRENT – nA TPC 8. Input Bias Current vs. Supply Voltage COMMON-MODE VOLTAGE – V –40 –2.5 2.5–2.0 INPUT BIAS CURRENT – nA –20 –30 –10 VS = /H115502.5V TA = 25/H11543C TPC 9. Input Bias Current vs. Common-Mode Voltage LOAD CURRENT – mA 1000 100 0.001 100.01 OUTPUT VOLTAGE – mV 0.1 1 SOURCE SINK VS = /H115501.5V TPC 10. Output Voltage to Supply Rail vs. Load Current LOAD CURRENT – mA 1000 100 0.001 10 0.01 OUTPUT VOLTAGE – mV 0.1 1 SOURCE SINK VS = /H115502.5V TPC 11. Output Voltage to Supply Rail vs. Load Current LOAD CURRENT – mA 1000 100 0.001 100.01 OUTPUT VOLTAGE – mV 0.1 1 SOURCE SINK VS = /H115506V TPC 12. Output Voltage to Supply Rail vs. Load Current

FREQUENCY – Hz –1010 1M100 OPEN-LOOP GAIN – dB 1k 10k 100k 225 PHASE SHIFT – /H11543C 135 180 VS = /H115502.5V TA = –40/H11543C GAIN PHASE TPC 16. Open-Loop Gain and Phase vs. Frequency (No Load) FREQUENCY – Hz –1010 1M100 OPEN-LOOP GAIN – dB 1k 10k 100k 225 PHASE SHIFT – /H11543C 135 180 VS = /H115502.5V TA = 125/H11543C PHASE GAIN TPC 17. Open-Loop Gain and Phase vs. Frequency (No Load) TEMPERATURE – /H11543C 950 800 200 –75 150–50 OPEN-LOOP GAIN – V/mV –25 0 25 50 75 100 125 650 500 350 VS = 5V 0.3V < VO < 4.7V RL = 100k/H9024 TPC 18. Open-Loop Gain vs. Temperature TEMPERATURE – /H11543C 4.95 4.70 3.7 –75 150–50 VOH OUTPUT VOLTAGE – V –25 0 25 50 75 100 125 4.45 4.2 3.85 I L = 100/H9262A I L = 1mA I L = 2mA VS = 5V TPC 13. Output Voltage Swing vs. Temperature TEMPERATURE – /H11543C 0.80 0.60 –75 150–50 VOL OUTPUT VOLTAGE – V –25 0 25 50 75 100 125 0.50 0.30 0.10 I L = –100/H9262A I L = –1mA VS = 5V TPC 14. Output Voltage Swing vs. Temperature FREQUENCY – Hz –1010 1M100 OPEN-LOOP GAIN – dB 1k 10k 100k 225 PHASE SHIFT – /H11543C 135 180 VS = /H115502.5V TA = 25/H11543C PHASE GAIN TPC 15. Open-Loop Gain and Phase vs. Frequency (No Load) OP196/OP296/OP496 REV. –8–

REV. –9– LOAD – k/H9024 500 100 400 300 200 600 150 1100 50 10 2 OPEN-LOOP GAIN – V/mV VS = 5V TA = 25/H11543C TPC 19. Open-Loop Gain vs. Resistive Load FREQUENCY – Hz –3010 1M100 CLOSED-LOOP GAIN – dB 1k 10k 100k –10 –20 VS = /H115502.5V RL = 10k/H9024 TA = 25/H11543C TPC 20. Closed-Loop Gain vs. Frequency FREQUENCY – Hz 1000 500 100 1M1k OUTPUT IMPEDANCE – /H9024 10k 100k 900 800 700 600 400 300 200 100 ACL = 10 ACL = 1 VS = /H115502.5V TA = 25/H11543C TPC 21. Output Impedance vs. Frequency FREQUENCY – Hz CMRR – dB 140 –40 100 10M 1k 10k 100k 1M 120 100 –20 VS = /H115502.5V TA = 25/H11543C ALL CHANNELS 160 TPC 22. CMRR vs. Frequency PSRR – dB FREQUENCY – Hz 160 140 –40 10 10M 100 1k 10k 1M100k 120 100 –20 VS = 5V TA = 25/H11543C +PSRR –PSRR TPC 23. PSRR vs. Frequency FREQUENCY – Hz 1k 1M 10k MAXIMUM OUTPUT SWING – V 100k VS = /H115502.5V VIN = 5V p-p AV = 1 RL = 100k/H9024 TPC 24. Maximum Output Swing vs. Frequency

TEMPERATURE – /H11543C –75 150–50 ISY/AMPLIFIER – /H9262A –40 –25 0 25 50 85 75 100 125 VS = 12V VS = 3V VS = 5V TPC 25. Supply Current/Amplifier vs. Temperature SUPPLY VOLTAGE – V 3511 3 3 ISY/AMPLIFIER – /H9262A 57 9 1 1 1 2 TA = 25/H11543C TPC 26. Supply Current/Amplifier vs. Supply Voltage FREQUENCY – Hz 011 k10 100

10 VOLTAGE NOISE DENSITY – nV/ Hz

VS = /H115502.5V TA = 25/H11543C VCM = 0V TPC 27. Voltage Noise Density vs. Frequency FREQUENCY – Hz 0.6 0.5 11 k 10 CURRENT NOISE DENSITY – pA/ Hz 100 0.4 0.3 0.2 0.1 VS = /H115502.5V TA = 25/H11543C VCM = 0V TPC 28. Input Bias Current Noise Density vs. Frequency SETTLING TIME – /H9262s –10 03 05 INPUT STEP – V 10 15 20 25 /H11545OUTPUT SWING – OUTPUT SWING VS = /H115506V TA = 25/H11543C TO 0.1% TPC 29. Settling Time to 0.1% vs. Step Size 100 1s2mV VS = /H115502.5V AV = 10k en = 0.8/H9262V p-p TPC 30. 0.1 Hz to 10 Hz Noise OP196/OP296/OP496 REV. –10–

REV. –11– 1x1x 2x2x Q8Q7 Q6Q5 R4A R4B 1x1x Q4Q3 2x2x Q2Q1 R3A R3B Q13 Q11 Q12 QC1 Q10 QC2 Q15 CC1 Q14 R2R1 I1 R6 CF1 D4 Q17 D5 Q18 QL1 Q16 CF2 D6 Q19 2x 1x CC2 1* 5* Q20 1.5x D10 D8 Q21 D9 Q22 Q23 OUT +IN –IN VEE VCC *OP196 ONLY TPC 36. Simplified Schematic 100 2/H9262s20mV VS = 2.5V AV = 1 RL = 10k/H9024 CL = 100pF TA = 25/H11543C 100mV TPC 31. Small Signal Transient Response 100 VS = /H115502.5V AV = 1 RL = 100k/H9024 CL = 100pF TA = 25/H11543C 2/H9262s20mV 100mV TPC 32. Small Signal Transient Response 100 VS = /H115502.5V RL = 10k/H9024 10/H9262s TPC 33. Large Signal Transient Response 100 VS = /H115502.5V RL = 100k/H9024 10/H9262s TPC 34. Large Signal Transient Response CH A: 40.0/H9262V FS 5.00/H9262V/DIV MKR: 36.8/H9262V/Hz 0Hz 10Hz MKR: 1.00Hz BW: 145mHz TPC 35. 1/f Noise Corner, VS = ±5 V, AV = 1,000

• Copyright 1995 by Analog Devices, Inc.
• Refer to “README.DOC” file for License Statement.
• terms and provisions in the License Statement.

Figure 12. A Single-Supply RTD Amplifier

REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure 14. 14-Lead Standard Small Outline Package [SOIC_N]

0.65 BSC

6.40 BSC

Figure 15. 8-Lead Thin Shrink Small Outline Package [TSSOP] Figure 16. 14-Lead Thin Shrink Small Outline Package

–18– REV. E ORDERING GUIDE Model1, 2 Temperature Range Package Description Package Option OP196GSZ −40°C to +85°C (Ambient) 8-Lead SOIC_N R-8 OP196GSZ-REEL −40°C to +85°C (Ambient) 8-Lead SOIC_N R-8 OP196GSZ-REEL7 −40°C to +85°C (Ambient) 8-Lead SOIC_N R-8 OP296GSZ −40°C to +85°C (Ambient) 8-Lead SOIC_N R-8 OP296GSZ-REEL −40°C to +85°C (Ambient) 8-Lead SOIC_N R-8 OP296GSZ-REEL7 −40°C to +85°C (Ambient) 8-Lead SOIC_N R-8 OP296HRUZ-REEL −40°C to +85°C (Ambient) 8-Lead TSSOP RU-8 OP496GS −40°C to +85°C (Ambient) 14-Lead SOIC_N R-14 OP496GS-REEL −40°C to +85°C (Ambient) 14-Lead SOIC_N R-14 OP496GS-REEL7 −40°C to +85°C (Ambient) 14-Lead SOIC_N R-14 OP496GSZ −40°C to +85°C (Ambient) 14-Lead SOIC_N R-14 OP496GSZ-REEL −40°C to +85°C (Ambient) 14-Lead SOIC_N R-14 OP496GSZ-REEL7 −40°C to +85°C (Ambient) 14-Lead SOIC_N R-14 OP496HRUZ-REEL −40°C to +85°C (Ambient) 14-Lead TSSOP RU-14 1 Z = RoHS Compliant Part. 2 Note OP496GS, OP496GS-REEL, and OP496GS-REEL7 are not RoHS compliant parts.

REV. E –19–

REVISION HISTORY

9/11—Rev. D to Rev. E Changes to Electrical Specifications Table (@VS = 5.0 V), Output Voltage Swing High and Output Swing Low Parameters, Change to Electrical Specifications Table (@V S = 12.0 V), 12/10—Rev. C to Rev. D Changes to Absolute Maximum Ratings Table and Package 1/02—Rev. B to Rev. C ©2002–2011 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the prop erty of their respective owners. D00312-0-9/11(E)