OP295_V01 AD | Alldatasheet

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Rev. G | Page 2 of 16 TABLE OF CONTENTS Cold Junction Compensated, Battery-Powered Low Dropout, 500 mA Voltage Regulator with Foldback

REVISION HISTORY

8/09—Rev. F to Rev. G 3/08—Rev. E to Rev. F 5/06—Rev. D to Rev. E 2/04—Rev. C to Rev. D 3/02—Rev. B to Rev. C

Rev. G | Page 3 of 16 SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

VS = 5.0 V , VCM = 2.5 V , TA = 25°C, unless otherwise noted. Table 1. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS 30 300 μV −40°C ≤ TA ≤ +125°C 800 μV Input Bias Current IB 8 20 nA −40°C ≤ TA ≤ +125°C 30 nA Input Offset Current IOS ±1 ±3 nA Input Voltage Range VCM 0 4.0 V Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 4.0 V, −40°C ≤ TA ≤ +125°C 90 110 dB Large Signal Voltage Gain AVO R L = 10 kΩ, 0.005 ≤ VOUT ≤ 4.0 V 1000 10,000 V/mV RL = 10 kΩ, −40°C ≤ TA ≤ +125°C 500 V/mV Offset Voltage Drift ΔVOS/ΔT 1 5 μV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High VOH R L = 100 kΩ to GND 4.98 5.0 V RL = 10 kΩ to GND 4.90 4.94 V IOUT = 1 mA, −40°C ≤ TA ≤ +125°C 4.7 V Output Voltage Swing Low VOL R L = 100 kΩ to GND 0.7 2 mV RL = 10 kΩ to GND 0.7 2 mV IOUT = 1 mA, −40°C ≤ TA ≤ +125°C 90 mV Output Current IOUT ±11 ±18 mA POWER SUPPLY Power Supply Rejection Ratio PSRR ±1.5 V ≤ VS ≤ ±15 V 90 110 dB Supply Current per Amplifier ISY V OUT = 2.5 V, RL = ∞, −40°C ≤ TA ≤ +125°C 150 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 0.03 V/μs Gain Bandwidth Product GBP 75 kHz Phase Margin θO 86 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 1.5 μV p-p Voltage Noise Density en f = 1 kHz 51 nV/√Hz Current Noise Density in f = 1 kHz <0.1 pA/√Hz VS = 3.0 V , VCM = 1.5 V , TA = 25°C, unless otherwise noted. Table 2. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS 100 500 μV Input Bias Current IB 8 20 nA Input Offset Current IOS ±1 ±3 nA Input Voltage Range VCM 0 2.0 V Common-Mode Rejection Ration CMRR 0 V ≤ VCM ≤ 2.0 V, −40°C ≤ TA ≤ +125°C 90 110 dB Large Signal Voltage Gain AVO R L = 10 kΩ 750 V/mV Offset Voltage Drift ∆VOS/∆T 1 μV/°C

Rev. G | Page 4 of 16 Parameter Symbol Conditions Min Typ Max Unit OUTPUT CHARACTERISTICS Output Voltage Swing High VOH R L = 10 kΩ to GND 2.9 V Output Voltage Swing Low VOL R L = 10 kΩ to GND 0.7 2 mV POWER SUPPLY Power Supply Rejection Ratio PSRR ±1.5 V ≤ VS ≤ ±15 V 90 110 dB Supply Current per Amplifier ISY V OUT = 1.5 V, RL = ∞, −40°C ≤ TA ≤ +125°C 150 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 0.03 V/μs Gain Bandwidth Product GBP 75 kHz Phase Margin θO 85 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 1.6 μV p-p Voltage Noise Density en f = 1 kHz 53 nV/√Hz Current Noise Density in f = 1 kHz <0.1 pA/√Hz VS = ±15.0 V , TA = 25°C, unless otherwise noted. Table 3. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS 300 500 μV −40°C ≤ TA ≤ +125°C 800 μV Input Bias Current IB V CM = 0 V 7 20 nA VCM = 0 V, −40°C ≤ TA ≤ +125°C 30 nA Input Offset Current IOS V CM = 0 V ±1 ±3 nA VCM = 0 V, −40°C ≤ TA ≤ +125°C ±5 nA Input Voltage Range VCM −15 +13.5 V Common-Mode Rejection Ratio CMRR −15.0 V ≤ VCM ≤ +13.5 V, −40°C ≤ TA ≤ +125°C 90 110 dB Large Signal Voltage Gain AVO R L = 10 kΩ 1000 4000 V/mV Offset Voltage Drift ΔVOS/ΔT 1 μV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High VOH R L = 100 kΩ to GND 14.95 V RL = 10 kΩ to GND 14.80 V Output Voltage Swing Low VOL R L = 100 kΩ to GND −14.95 V RL = 10 kΩ to GND −14.85 V Output Current IOUT ±15 ±25 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±1.5 V to ±15 V 90 110 dB VS = ±1.5 V to ±15 V, −40°C ≤ TA ≤ +125°C 85 dB Supply Current per Amplifier ISY V O = 0 V, RL = ∞, VS = ±18 V, −40°C ≤ TA ≤ +125°C 175 μA Supply Voltage Range VS 3 (± 1.5) 36 (± 18) V DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 0.03 V/μs Gain Bandwidth Product GBP 85 kHz Phase Margin θO 83 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 1.25 μV p-p Voltage Noise Density en f = 1 kHz 45 nV/√Hz Current Noise Density in f = 1 kHz <0.1 pA/√Hz

device soldered to printed circuit board for SOIC package. Table 5. Thermal Resistance 1 Absolute maximum ratings apply to packaged parts, unless otherwise noted.

2 For supply voltages less than ±18 V, the absolute maximum input voltage is

equal to the supply voltage.

Figure 27. A 5 V 12-Bit DAC with 0 V to 4.095 V Output Swing baseline current budget within which the circuit must operate. signal conditioning circuitry or to power a bridge circuit. Figure 28. 4 mA to 20 mA Current Loop Transmitter

3 V LOW DROPOUT LINEAR VOLTAGE REGULATOR

easily handled by the OP295/OP495 output. feeds a portion of the signal to the error amplifier. Figure 29. 3 V Low Dropout Voltage Regulator output underwent a 20 mA to 50 mA step current change. Figure 30. Output Step Load Current Recovery foldback current limiting protection. Figure 31. Low Dropout, 500 mA Voltage Regulator

Rev. G | Page 16 of 16 ORDERING GUIDE Model Temperature Range Package Description Package Option OP295GP −40°C to +125°C 8-Lead PDIP P-Suffix (N-8) OP295GPZ1 −40°C to +125°C 8-Lead PDIP P-Suffix (N-8) OP295GS −40°C to +125°C 8-Lead SOIC_N S-Suffix (R-8) OP295GS-REEL −40°C to +125°C 8-Lead SOIC_N S-Suffix (R-8) OP295GS-REEL7 −40°C to +125°C 8-Lead SOIC_N S-Suffix (R-8) OP295GSZ1 −40°C to +125°C 8-Lead SOIC_N S-Suffix (R-8) OP295GSZ-REEL1 −40°C to +125°C 8-Lead SOIC_N S-Suffix (R-8) OP295GSZ-REEL71 −40°C to +125°C 8-Lead SOIC_N S-Suffix (R-8) OP495GP −40°C to +125°C 14-Lead PDIP P-Suffix (N-14) OP495GPZ1 −40°C to +125°C 14-Lead PDIP P-Suffix (N-14) OP495GS −40°C to +125°C 16-Lead SOIC_W S-Suffix (RW-16) OP495GS-REEL −40°C to +125°C 16-Lead SOIC_W S-Suffix (RW-16) OP495GSZ1 −40°C to +125°C 16-Lead SOIC_W S-Suffix (RW-16) OP495GSZ-REEL1 −40°C to +125°C 16-Lead SOIC_W S-Suffix (RW-16) 1 Z = RoHS Compliant Part. ©2009 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the prop erty of their respective owners. D00331-0-8/09(G)