OP470

OP470 Very Low Noise Quad Operational Amplifier Data Sheet (REV. B)

Document overview

• Manufacturer or author: Analog Devices
• PDF pages: 16

Technical content

REV. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. a OP470 Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002 Very Low Noise Quad Operational Amplifier

FEATURES

Very Low-Noise, 5 nV/ ÷Hz @ 1 kHz Max Excellent Input Offset Voltage, 0.4 mV Max Low Offset Voltage Drift, 2 /H9262V//H11543C Max Very High Gain, 1000 V/mV Min Outstanding CMR, 110 dB Min Slew Rate, 2 V/ /H9262s Typ Gain-Bandwidth Product, 6 MHz Typ Industry Standard Quad Pinouts Available in Die Form GENERAL DESCRIPTION The OP470 is a high-performance monolithic quad operational amplifier with exceptionally low voltage noise, 5 nV/ ÷Hz at 1 kHz max, offering comparable performance to ADI’s industry standard OP27. The OP470 features an input offset voltage below 0.4 mV, excellent for a quad op amp, and an offset drift under 2 mV/∞C, guaranteed over the full military temperature range. Open loop gain of the OP470 is over 1,000,000 into a 10 k W load ensuring excellent gain accuracy and linearity, even in high gain applica- tions. Input bias current is under 25 nA, which reduces errors due to signal source resistance. The OP470’s CMR of over 110 dB and PSRR of less than 1.8 mV/V significantly reduce errors due to ground noise and power supply fluctuations. Power consumption of the quad OP470 is half that of four OP27s, a significant advantage for power conscious applications. The OP470 is unity-gain stable with a gain bandwidth product of 6 MHz and a slew rate of 2 V/ ms. PIN CONNECTIONS 14-Lead Hermetic DIP (Y-Suffix) 14-Lead Plastic DIP (P-Suffix) OUT A –IN A +IN A +IN B –IN B OUT B OUT D –IN D +IN D +IN C –IN C OUT C OP470 16-Lead SOIC Package (S-Suffix) NC = NO CONNECT OUT A OUT D OP470 –IN A –IN D +IN A +IN D V+ V– +IN B +IN C –IN B –IN C OUT B OUT C NC NC SIMPLIFIED SCHEMATIC –IN +IN BIAS The OP470 offers excellent amplifier matching which is impor- tant for applications such as multiple gain blocks, low noise instrumentation amplifiers, quad buffers, and low noise active filters. The OP470 conforms to the industry standard 14-lead DIP pinout. It is pin compatible with the LM148/149, HA4741, HA5104, and RM4156 quad op amps and can be used to up- grade systems using these devices. For higher speed applications, the OP471, with a slew rate of 8 V/ms, is recommended.

REV. B–2– OP470–SPECIFICATIONS OP470A/E OP470F OP470G Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Unit INPUT OFFSET INPUT OFFSET CURRENT I OS VCM = 0 V 3 10 6 20 12 30 nA INPUT BIAS CURRENT I B VCM = 0 V 6 25 15 50 25 60 nA INPUT NOISE VOLTAGE e np-p 0.1 Hz to 10 Hz 80 200 80 200 80 200 nV p-p (Note 1) (Note 2) INPUT NOISE f O = 10 Hz 1.7 1.7 1.7 Current Density i n fO = 100 Hz 0.7 0.7 0 7 pA ÷Hz fO = 1 kHz 0.4 0.4 0.4 LARGE-SIGNAL V = ± 10 V Voltage Gain A VO RL = 10 kW 1000 2300 800 1700 800 1700 V/mV RL = 2 kW 500 1200 400 900 400 900 INPUT VOLTAGE RANGE IVR (Note 3) ± 11 ± 12 ± 11 ± 12 ± 11 ± 12 V OUTPUT VOLTAGE SWING V O RL ≥ 2 kW± 12 ± 13 ± 12 ± 13 ± 12 ± 13 V COMMON-MODE REJECTION CMR V CM = ± 11 V 110 125 100 120 100 120 dB POWER SUPPLY SLEW RATE SR 1.4 2 1.4 2 1.4 2 V/ ms SUPPLY CURRENT (All Amplifiers) I SY No Load 9 1 19 1 19 1 1 m A GAIN BANDWIDTH PRODUCT GBW A V = 10 666 M H z CHANNEL SEPARATION CS V O = 20 V p-p 125 155 125 155 125 155 dB fO = 10 Hz (Note 1) INPUT CAPACITANCE C IN 222 p F INPUT RESISTANCE R IN 0.4 0.4 0.4 M W Differential-Mode INPUT RESISTANCE Common-Mode R INCM 11 11 11 G W AV = 1 SETTLING TIME t S to 0.1% 5.5 5.5 5.5 ms to 0.01 % 6.0 6.0 6.0 NOTES 1Guaranteed but not 100% tested 2Sample tested 3Guaranteed by CMR test ELECTRICAL CHARACTERISTICS(at VS = /H1155015 V, TA = 25/H11543C, unless otherwise noted.)

REV. B –3– OP470 OP470A Parameter Symbol Conditions Min Typ Max Unit INPUT OFFSET VOLTAGE V OS 0.14 0.6 mV AVERAGE INPUT Offset Voltage Drift TCV OS 0.4 2 mV/∞C INPUT OFFSET CURRENT I OS VCM = 0 V 5 20 nA INPUT BIAS CURRENT I B VCM = 0 V 15 20 nA LARGE-SIGNAL V O = ± 10 V Voltage Gain A VO RL = 10 kW 750 1600 V/mV RL = 2 kW 400 800 INPUT VOLTAGE RANGE* IVR ± 11 ± 12 V OUTPUT VOLTAGE SWING V O RL ≥ 2 kW± 12 ± 13 V COMMON-MODE REJECTION CMR V CM = ± 11 V 100 120 dB POWER SUPPLY REJECTION RATIO PSRR V S = ± 4.5 V to ± 18 V 1.0 5.6 mV/V SUPPLY CURRENT (All Amplifiers) I SY No Load — 9.2 11 mA *Guaranteed by CMR test (at VS = /H1155015 V, –55 /H11543C £ TA £ 125/H11543C for OP470A, unless otherwise noted.)ELECTRICAL CHARACTERISTICS OP470E OP470F OP470G Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Unit INPUT OFFSET AVERAGE INPUT Offset Voltage Drift TCV OS 0.4 2 0.6 4 2 mV/∞C INPUT OFFSET CURRENT I OS VCM = 0 V 4 20 7 40 20 50 nA INPUT BIAS CURRENT I B VCM = 0 V 11 50 2 07 0 4 07 5 n A LARGE-SIGNAL V O = ± 10 V Voltage Gain A VO RL = 10 kW 800 1800 600 1400 600 1500 V/mV RL = 2 kW 400 900 300 700 300 800 INPUT VOLTAGE RANGE* IVR ± 11 ± 12 ± 11 ± 12 ± 11 ± 12 V OUTPUT VOLTAGE SWING V O RL ≥ 2 kW± 12 ± 13 ± 12 ± 13 ± 12 ± 13 V COMMON-MODE REJECTION CMR V CM = ± 11 V 100 120 90 115 90 110 dB POWER SUPPLY SUPPLY CURRENT (All Amplifiers) I SY No Load — 9.2 11 — 9.2 11 — 9.3 11 mA *Guaranteed by CMR test (at VS = /H1155015 V, –25 /H11543C £ TA £ 85/H11543C for OP470E/OP470EF, –40 /H11543C £ TA £ 85/H11543C for OP470G, unless otherwise noted.)ELECTRICAL CHARACTERISTICS

REV. B–4– OP470–SPECIFICATIONS OP470GBC Parameter Symbol Conditions Limit Unit INPUT OFFSET VOLTAGE V OS 0.8 mV Max INPUT OFFSET CURRENT I OS VCM = 0 V 20 nA Max INPUT BIAS CURRENT I B VCM = 0 V 50 nA Min LARGE-SIGNAL V O = ± 10 V Voltage Gain A VO RL = 10 kW 800 V/mV Min RL = 2 kW 400 INPUT VOLTAGE RANGE* IVR ± 11 V Min OUTPUT VOLTAGE SWING V O RL ≥ 2 kW± 12 V Min COMMON-MODE REJECTION CMR V CM = ± 11 V 100 dB POWER SUPPLY REJECTION RATIO PSRR V S = ± 4.5 V to ± 18 V 5.6 mV/V Max SUPPLY CURRENT (All Amplifiers) I SY No Load 11 mA Max NOTE *Guaranteed by CMR test Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaran- teed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing. (at VS = /H1155015 V, 25/H11543C, unless otherwise noted.)WAFER TEST LIMITS

Figure 1. Dice Characteristics voltage exceeds ± 1.0 V, the input current should be limited to ± 25 mA. printed circuit board for SOIC packages.

400 MIL

400 OP470AY * MIL

400 OP470EY IND

800 OP470FY * IND

1000 OP470GP XIND

1000 OP470GS XIND

*Not for new design; obsolete April 2002. *Not for new designs; obsolete April 2002. recommended to avoid performance degradation or loss of functionality.

REV. B OP470 –6– –Typical Performance Characteristics FREQUENCY – Hz TA = 25/H11543C VS = /H1155015V 10 100 1k VOLTAG E NOISE – nV/ Hz I/F CORNER = 5Hz TPC 1. Voltage Noise Density vs. Frequency FREQUENCY – Hz CURRENT NOISE – pA/ Hz 10.0 0.1 10 10k 1.0 100 1k TA = 25/H11543C VS = /H1155015V I/F CORNER = 200Hz TPC 4. Current Noise Density vs. Frequency TEMPERA TURE – /H11543C INPUT BIAS CURRENT – nA –75 –50 –25 0 25 50 75 100 125 VS = /H1155015V VCM = 0V TPC 7. Input Bias Current vs. Temperature SUPPL Y VOL T AGE – V VOLTAG E NOISE – nV/ Hz 0 /H115505 /H1155020/H1155010 /H1155015 TA = 25/H11543C AT 10Hz AT 1kHz TPC 2. Voltage Noise Density vs. Supply Voltage TEMPERA TURE – /H11543C INPUT OFFSET VOL T AGE – /H9262V 140 –75 VS = /H1155015V 120 100 –50 –25 0 25 50 75 100 125 TPC 5. Input Offset Voltage vs. Temperature TEMPERSTURE – /H11543C INPUT OFFSET CURRENT – nA –75 –50 –25 0 25 50 75 100 125 VS = /H1155015V VCM = 0V TPC 8. Input Offset Current vs. Temperature 100 5mV 1s 02468 1 0 TIME – Secs NOISE VOL T AGE – 100nV/DIV TA = 25/H11543C VS = /H1155015V TPC 3. 0.1 Hz to 10 Hz Noise TIME – Mins CHANGE IN OFFSET VOL T AGE – /H9262V TA = 25/H11543C VS = /H1155015V9 1 2345 TPC 6. Warm-Up Offset Voltage Drift COMMON-MODE VOL T AGE – V INPUT BIAS CURRENT – nA –12.5 TA = 25/H11543C VS = /H1155015V TPC 9. Input Bias Current vs. Common-Mode Voltage

REV. B –7– OP470 FREQUENCY – Hz CMR – dB 130 TA = 25/H11543C VS = /H1155015V120 110 100 10 100 1k 10k 100k 1M TPC 10. CMR vs. Frequency FREQUENCY – Hz PSR – dB 140 120 100 10 100 1k 10k 100k 1M 10M 100M 130 110 TA = 25/H11543C –PSR +PSR TPC 13. PSR vs. Frequency FREQUENCY – MHz GAIN – dB 23 4 5 –10 67 8 9 10 TA = 25/H11543C VS = /H1155015V 100 120 140 160 180 200 220 PHASE SHIFT – Degrees PHASE GAIN PHASE MARGIN = 58/H11543 TPC 16. Open-Loop Gain, Phase Shift vs. Frequency SUPPL Y VOL T AGE – V TOTAL SUPPL Y CURRENT – mA 0 /H115505 /H1155020/H1155010 /H1155015 TA = +25/H11543C TA = +125/H11543C TA = –55/H11543C TPC 11. Total Supply Current vs. Supply Voltage FREQUENCY – Hz OPEN-LOOP GAIN – dB 140 120 100 10 100 1k 10k 100k 1M 10M 100M 130 110 TA = 25/H11543C VS = 15V TPC 14. Open-Loop Gain vs. Frequency SUPPL Y VOL T AGE – V OPEN-LOOP GAIN – V/mV 5000 TA = 25/H11543C RL = 10k/H9024 4000 3000 2000 1000 /H115505 /H1155010 /H1155015 /H1155020 /H1155025 TPC 17. Open-Loop Gain vs. Supply Voltage TEMPERSTURE – /H11543C TOTAL SUPPL Y CURRENT – mA –75 –50 –25 0 25 50 75 100 125 VS = /H1155015V TPC 12. Total Supply Current vs. Supply Voltage FREQUENCY – Hz CLOSED-LOOP GAIN – dB –20 10k 100k 1M 10M TPC 15. Closed-Loop Gain vs. Frequency TEMPERA TURE – /H11543C PHASE MARGIN – Degrees –75 –50 –25 0 25 50 75 100 125 150 GAIN-BANDWIDTH PRODUCT – MHz VS = /H1155015V GBW /H9278 TPC 18. Gain-Bandwidth Product, Phase Margin vs. Temperature

REV. B OP470 –8– FREQUENCY – Hz PEAK-TO-PEAK AMPLITUDE – V 10k 100k 1M 10M TA = 25/H11543C VS = /H1155015V THD = 1% TPC 19. Maximum Output Swing vs. Frequency FREQUENCY – Hz OUTPUT IMPEDANCE – /H9024 360 100 300 240 180 120 1k 10k 100k 1M 10M 100M TA = 25/H11543C VS = /H1155015V AV = 100 AV = 1 TPC 22. Output Impedance vs. Frequency FREQUENCY – Hz DISTORTION – % 0.1 0.01 0.001 100 1k 10k TA = 25/H11543C VS = /H1155015V VO = 10V p-p RL = 2k/H9024 AV = 1 AV = –10 TPC 25. Total Harmonic Distortion vs. Frequency LOAD RESIST ANCE – /H9024 MAXIMUM OUTPUT – V 100 1k 10k TA = 25/H11543C VS = /H1155015V POSITIVE SWING NEGA TIVE SWING TPC 20. Maximum Output Voltage vs. Load Resistance TEMPERA TURE – /H11543C SLEW RA TE – V//H9262s 4.0 –75 3.5 3.0 2.5 2.0 1.5 1.0 –50 –25 0 25 50 75 100 125 VS = /H1155015V –SR +SR TPC 23. Slew Rate vs. Temperature 100 TA = 25/H11543C VS = /H1155015V AV = 1 5V 20µs TPC 26. Large-Signal Transient Response CAP ACITIVE LOAD – pF OVERSHOOT – % 100 TA = 25/H11543C VS = /H1155015V VIN = 100mV AV = 1 0 200 400 600 800 1000 TPC 21. Small-Signal Overshoot vs. Capacitive Load FREQUENCY – Hz CHANNEL SEP ARA TION – dB 170 150 130 110 100 1k 10k 100k 1M 10M TA = 25/H11543C VS = /H1155015V VO = 20V p-p TO 10kHz 160 140 120 100 TPC 24. Channel Separation vs. Frequency 100 TA = 25/H11543C VS = /H1155015V AV = 1 50mV 0.2µs TPC 27. Small-Signal Transient Response

REV. B OP470 –12– CAPACITIVE LOAD DRIVING AND POWER SUPPLY CONSIDERATIONS The OP470 is unity-gain stable and is capable of driving large capacitive loads without oscillating. Nonetheless, good supply bypassing is highly recommended. Proper supply bypassing reduces problems caused by supply line noise and improves the capacitive load driving capability of the OP470. In the standard feedback amplifier, the op amp’s output resistance combines with the load capacitance to form a low pass filter that adds phase shift in the feedback network and reduces stability. A simple circuit to eliminate this effect is shown in Figure 11. The added components, C1 and R3, decouple the amplifier from the load capacitance and provide additional stability. The values of C1 and R3 shown in Figure 11 are for a load capaci- tance of up to 1000 pF when used with the OP470. 100/H9024* *SEE TEXT 50/H9024 OP470 0.1/H9262F* 10/H9262F VOUT CL 1000pF 1000pF VIN PLACE SUPPL Y DECOUPLING CAP ACITORS A T OP470 0.1/H9262F 10/H9262F Figure 11. Driving Large Capacitive Loads diode clamp is required per board or system. Figure 12. Pulsed Operation

10 V); the amplifier will stay in its active mode and a smooth

with Rf helps eliminate this problem.

APPLICATIONS

A simple method of reducing amplifier noise by paralleling amplifiers is shown in Figure 13. Amplifier noise, depicted in Figure 14, is around 2 nV/ ÷Hz @ 1 kHz (R.T.I.). Gain for each paralleled amplifier and the entire circuit is 1000. The 200 W resistors limit circulating currents and provide an effective out- put resistance of 50 W. The amplifier is stable with a 10 nF capacitive load and can supply up to 30 mA of output drive. 50k/H9024 OP470E +15V –15V 200/H9024 50/H9024 VIN 50k/H9024 OP470E 200/H9024 50/H9024 50k/H9024 OP470E 200/H9024 50/H9024 R11 50k/H9024 OP470E R12 200/H9024 R10 50/H9024 VOUT = 1000VIN Figure 13. Low Noise Amplifier

REV. B OP470 –15– OUTLINE DIMENSIONS 14-Lead Ceramic Dip-Glass Hermetic Seal [CERDIP] (Q-14) Dimensions shown in inches and (millimeters) 0.310 (7.87) 0.220 (5.59) PIN 1 0.005 (0.13) MIN 0.098 (2.49) MAX 0.100 (2.54) BSC 0.320 (8.13) 0.290 (7.37) 0.015 (0.38) 0.008 (0.20) SEATING PLANE 0.200 (5.08) MAX 0.785 (19.94) MAX 0.150 (3.81) MIN 0.200 (5.08) 0.125 (3.18) 0.023 (0.58) 0.014 (0.36) 0.070 (1.78) 0.030 (0.76) 0.060 (1.52) 0.015 (0.38) CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETERS DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN 14-Lead Plastic Dual-in-Line Package [PDIP] (N-14) Dimensions shown in inches and (millimeters) 1 7 0.685 (17.40) 0.665 (16.89) 0.645 (16.38) 0.295 (7.49) 0.285 (7.24) 0.275 (6.99) 0.100 (2.54) BSC SEATING PLANE 0.180 (4.57) MAX 0.022 (0.56) 0.018 (0.46) 0.014 (0.36) 0.150 (3.81) 0.130 (3.30) 0.110 (2.79) 0.060 (1.52) 0.050 (1.27) 0.045 (1.14) 0.150 (3.81) 0.135 (3.43) 0.120 (3.05) 0.015 (0.38) 0.010 (0.25) 0.008 (0.20) 0.325 (8.26) 0.310 (7.87) 0.300 (7.62) 0.015 (0.38) MIN CONTROLLING DIMENSIONS ARE IN INCH; MILLIMETERS DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN COMPLIANT TO JEDEC STANDARDS MO-095-AB 16-Lead Standard Small Outline Package [SOIC] Wide Body (RW-16) Dimensions shown in millimeters and (inches) CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN COMPLIANT TO JEDEC STANDARDS MS-013AA SEATING PLANE 0.30 (0.0118) 0.10 (0.0039) 0.51 (0.0201) 0.33 (0.0130) 2.65 (0.1043) 2.35 (0.0925) 1.27 (0.0500) BSC 16 9 10.65 (0.4193) 10.00 (0.3937) 7.60 (0.2992) 7.40 (0.2913) 10.50 (0.4134) 10.10 (0.3976) 0.32 (0.0126) 0.23 (0.0091) 8/H11543 0/H11543 0.75 (0.0295) 0.25 (0.0098) /H11547 45/H11543 1.27 (0.0500) 0.40 (0.0157) COPLANARITY 0.10

REV. B–16– C00305–0–10/02(B) PRINTED IN U.S.A. ADV611/ADV612

Revision History

10/02—Data Sheet changed from REV. A to REV. B. 4/02—Data Sheet changed from REV. 0 to REV. A.