OP400_07 AD | Alldatasheet

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Technical content

Rev. E | Page 2 of 16 TABLE OF CONTENTS

REVISION HISTORY

1/07—Rev. D to Rev. E 3/06—Rev. C to Rev. D 6/03—Rev. B to Rev. C 10/02—Rev. A to Rev. B 4/02—Rev. 0 to Rev. A

Rev. E | Page 3 of 16 SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

@ VS = ±15 V , TA = +25°C, unless otherwise noted. Table 1. OP400A/E OP400F OP400G/H Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Unit INPUT CHARACTERISTICS Input Offset Voltage VOS 40 150 60 230 80 300 μV Long-Term Input Voltage Stability 0.1 0.1 0.1 μV/mo Input Noise Voltage en p-p 0.1 Hz to 10 Hz 0.5 0.5 0.5 μV p-p Input Resistance Differential Mode RIN 10 10 10 MΩ Input Resistance Common Mode RINCM 200 200 200 GΩ Large Signal Voltage Gain AVO VO = ±10 V RL = 10 kΩ 5000 12,000 3000 7000 3000 7000 V/mV RL = 2 kΩ 2000 3500 1500 3000 1500 3000 V/mV Input Voltage Range1 IVR ±12 ±13 ±12 ±13 ±12 ±13 V Common-Mode Rejection CMR VCM = 12 V 120 140 115 140 110 135 dB Input Capacitance CIN 3.2 3.2 3.2 pF OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 10 kΩ ±12 ±12.6 ±12 ±12.6 ±12 ±12.6 V POWER SUPPLY Power Supply Rejection Ratio Supply Current per Amplifier ISY No load 600 725 600 725 600 725 μA DYNAMIC PERFORMANCE Gain Bandwidth Product GBWP AV = 1 500 500 500 kHz Channel Separation CS VO = 20 V p-p, 123 135 123 135 123 135 dB fO = 10 Hz2 Capacitive Load Stability AV = 1, no oscillations 10 10 10 nF NOISE PERFORMANCE Input Noise Voltage en fO = 10 Hz3 22 36 22 36 22 nV/√Hz Density3 fO = 1000 Hz3 11 18 11 18 11 nV/√Hz Input Noise Current in p-p 0.1 Hz to 10 Hz 15 15 15 pA p-p Input Noise Current Density in fO = 10 Hz 0.6 0.6 0.6 pA/√Hz 1 Guaranteed by CMR test. 2 Guaranteed but not 100% tested. 3 Sample tested.

Rev. E | Page 4 of 16 @ VS = ±15 V , −55°C ≤ TA ≤ +125°C for OP400A, unless otherwise noted. Table 2. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Input Offset Voltage VOS 70 270 μV Average Input Offset Voltage Drift TCVOS 0.3 1.2 μV/°C Input Offset Current IOS VCM = 0 V 0.1 2.5 nA Input Bias Current IB VCM = 0 V 1.3 5.0 nA Large Signal Voltage Gain AVO VO = ±10 V, RL = 10 kΩ 3000 9000 V/mV RL = 2 kΩ 1000 2300 Input Voltage Range1 IVR ±12 ±12.5 V Common-Mode Rejection CMR VCM = ±12 V 115 130 dB OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 10 kΩ ±12 ±12.4 POWER SUPPLY Power Supply Rejection Ratio PSRR VO = 3 V to 18 V 0.2 3.2 μV/V Supply Current per Amplifier ISY No load 600 775 μA DYNAMIC PERFORMANCE Capacitive Load Stability AV = 1, no oscillations 8 nF 1 Guaranteed by CMR test. @ VS = ±15 V , −25°C ≤ TA ≤ +85°C for OP400E/F , 0°C ≤ TA ≤ 70°C for OP400G, −40°C ≤ TA ≤ +85°C for OP400H, unless otherwise noted. Table 3. OP400E OP400F OP400G/H Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Unit INPUT CHARACTERISTICS Input Offset Voltage VOS 60 220 80 350 110 400 μV Average Input Offset Voltage Drift Input Offset Current IOS VCM = 0 V H grade 0.2 12.0 nA Input Bias Current IB VCM = 0 V H grade 1.0 20.0 nA Large-Signal Voltage Gain AVO VCM = 0 V RL = 10 kΩ 3000 10,000 2000 5000 2000 5000 V/mV RL = 2 kΩ 1500 2700 1000 2000 1000 2000 V/mV Input Voltage Range1 IVR ±12 ±12.5 ±12 ±12.5 ±12 ±12.5 V Common-Mode Rejection CMR VCM = ±12 V 115 135 110 135 105 130 dB OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 10 kΩ ±12 ±12.4 ±12 ±12.4 ±12 ±12.6 V RL = 2 kΩ ±11 ±12 ±11 ±12 ±11 ±12.2 V POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±3 V to ±18 V Supply Current per Amplifier ISY No load 600 775 600 775 600 775 μA DYNAMIC PERFORMANCE Capacitive Load Stability No oscillations 10 10 10 nF 1 Guaranteed by CMR test.

parts, unless otherwise noted. Table 5. Thermal Resistance

Rev. E | Page 11 of 16

APPLICATIONS

The OP400 is inherently stable at all gains and is capable of driving large capacitive loads without oscillating. Nonetheless, good supply decoupling is highly recommended. Proper supply decoupling reduces problems caused by supply line noise and improves the capacitive load-driving capability of the OP400. Total supply current can be reduced by connecting the inputs of an unused amplifier to V−. This turns the amplifier off, lowering the total supply current. DUAL LOW POWER INSTRUMENTATION AMPLIFIER A dual instrumentation amplifier that consumes less than 33 mW of power per channel is shown in Figure 30. The linear- ity of the instrumentation amplifier exceeds 16 bits in gains of 5 to 200 and is better than 14 bits in gains from 200 to 1000. CMRR is above 115 dB (G = 1000). Offset voltage drift is typically 0.4 μV/°C over the military temperature range, which is comparable to the best monolithic instrumentation amplifiers. The bandwidth of the low power instrumentation amplifier is a function of gain and is shown in Table 6. The output signal is specified with respect to the reference input, which is normally connected to analog ground. The reference input can be used to offset the output from −10 V to +10 V if required. Table 6. Gain Bandwidth Figure 30. Dual Low Power Instrumentation Amplifier

Rev. E | Page 15 of 16 ORDERING GUIDE Model Temperature Range Package Description Package Option OP400AY −55°C to +125°C 14-Lead CERDIP Y-Suffix (Q-14) OP400EY −25°C to +85°C 14-Lead CERDIP Y-Suffix (Q-14) OP400FY −25°C to +85°C 14-Lead CERDIP Y-Suffix (Q-14) OP400GP 0°C to +70°C 14-Lead PDIP P-Suffix (N-14) OP400GPZ1 0°C to +70°C 14-Lead PDIP P-Suffix (N-14) OP400HP −40°C to +85°C 14-Lead PDIP P-Suffix (N-14) OP400HPZ1 −40°C to +85°C 14-Lead PDIP P-Suffix (N-14) OP400GS 0°C to +70°C 16-Lead SOIC_W S-Suffix (RW-16) OP400GS-REEL 0°C to +70°C 16-Lead SOIC_W S-Suffix (RW-16) OP400GSZ1 0°C to +70°C 16-Lead SOIC_W S-Suffix (RW-16) OP400GSZ-REEL1 0°C to +70°C 16-Lead SOIC_W S-Suffix (RW-16) OP400HS −40°C to +85°C 16-Lead SOIC_W S-Suffix (RW-16) OP400HS-REEL −40°C to +85°C 16-Lead SOIC_W S-Suffix (RW-16) OP400HSZ1 −40°C to +85°C 16-Lead SOIC_W S-Suffix (RW-16) OP400HSZ-REEL1 −40°C to +85°C 16-Lead SOIC_W S-Suffix (RW-16) OP400GBC Die 1 Z = Pb-free part. SMD PARTS AND EQUIVALENTS SMD Part Number1 Analog Devices Equivalent 5962-8777101M3A OP400ATCMDA 5962-8777101MCA OP400AYMDA 1 For military processed devices, please refer to the standard microcircuit drawing (SMD) available at the Defense Supply Center Columbus website.

Rev. E | Page 16 of 16 ©2007 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. C00304-0-1/07(E) NOTES