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Technical content

8-Lead Narrow-Body SO 8-Lead Epoxy DIP (S Suffix) (P Suffix) OUT A –IN A +IN A OUT B –IN B +IN B 4 5 OP295 OUT A –IN A +IN A OUT B –IN B +IN B OP295 14-Lead Epoxy DIP 16-Lead SO (300 Mil) (P Suffix) (S Suffix) OUT A –IN A +IN A OUT B –IN D +IN D OUT D –IN B +IN B OUT C –IN C +IN C 4 11 OP495 7 8 OUT A –IN A +IN A OUT D –IN D +IN D OUT B –IN B +IN B NC OUT C –IN C +IN C 41 3 OP495 NC NC = NO CONNECT REV. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. a Dual/Quad Rail-to-Rail Operational Amplifiers OP295/OP495 © Analog Devices, Inc., 1995 Tel: 617/329-4700 Fax: 617/326-8703

FEATURES

Single-Supply Operation: +3 V to +36 V Low Offset Voltage: 300 mV Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1000 V/mV Unity-Gain Stable Low Supply Current/Per Amplifier: 150 mA max

APPLICATIONS

Battery Operated Instrumentation Servo Amplifiers Actuator Drives Sensor Conditioners Power Supply Control GENERAL DESCRIPTION Rail-to-rail output swing combined with dc accuracy are the key features of the OP495 quad and OP295 dual CBCMOS opera- tional amplifiers. By using a bipolar front end, lower noise and higher accuracy than that of CMOS designs has been achieved. Both input and output ranges include the negative supply, pro- viding the user “zero-in/zero-out” capability. For users of 3.3 volt systems such as lithium batteries, the OP295/OP495 is specified for three volt operation. Maximum offset voltage is specified at 300 µV for +5 volt opera- tion, and the open-loop gain is a minimum of 1000 V/mV. This yields performance that can be used to implement high accuracy systems, even in single supply designs. The ability to swing rail-to-rail and supply +15 mA to the load makes the OP295/OP495 an ideal driver for power transistors and “H” bridges. This allows designs to achieve higher efficien- cies and to transfer more power to the load than previously pos- sible without the use of discrete components. For applications that require driving inductive loads, such as transformers, in- creases in efficiency are also possible. Stability while driving capacitive loads is another benefit of this design over CMOS rail-to-rail amplifiers. This is useful for driving coax cable or large FET transistors. The OP295/OP495 is stable with loads in excess of 300 pF. The OP295 and OP495 are specified over the extended indus- trial (–40°C to +125°C) temperature range. OP295s are avail- able in 8-pin plastic and ceramic DIP plus SO-8 surface mount packages. OP495s are available in 14-pin plastic and SO-16 surface mount packages. Contact your local sales office for MIL-STD-883 data sheet.

REV. B–2– OP295/OP495–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Units INPUT CHARACTERISTICS Offset Voltage V OS 30 300 µV –40°C ≤ TA ≤ +125°C 800 µV Input Bias Current I B 82 0 n A –40°C ≤ TA ≤ +125°C3 0 n A Input Offset Current I OS ± 1 ± 3n A Input Voltage Range V CM 0 +4.0 V Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 4.0 V, –40°C ≤ TA ≤ +125°C 90 110 dB Large Signal Voltage Gain A VO RL = 10 kΩ , 0.005 ≤ VOUT ≤ 4.0 V 1000 10,000 V/mV RL = 10 kΩ , –40°C ≤ TA ≤ +125°C 500 V/mV Offset Voltage Drift Δ VOS/Δ T 15 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High V OH RL = 100 kΩ to GND 4.98 5.0 V RL = 10 kΩ to GND 4.90 4.94 V IOUT = 1 mA, –40°C ≤ TA ≤ +125°C 4.7 V Output Voltage Swing Low V OL RL = 100 kΩ to GND 0.7 2 mV RL = 10 kΩ to GND 0.7 2 mV IOUT = 1 mA, –40°C ≤ TA ≤ +125°C9 0 m V Output Current I OUT ± 11 ± 18 mA POWER SUPPLY Power Supply Rejection Ratio PSRR ± 1.5 V ≤ VS ≤ ± 15 V 90 110 dB –40°C ≤ TA ≤ +125°C8 5 d B Supply Current Per Amplifier I SY VOUT = 2.5 V, RL = ∞ , –40°C ≤ TA ≤ +125°C 150 µA DYNAMIC PERFORMANCE Skew Rate SR R L = 10 kΩ 0.03 V/ µs Gain Bandwidth Product GBP 75 kHz Phase Margin θO 86 Degrees NOISE PERFORMANCE Voltage Noise e n p-p 0.1 Hz to 10 Hz 1.5 µV p-p Voltage Noise Density e n f = 1 kHz 51 nV/ √Hz Current Noise Density i n f = 1 kHz <0.1 pA/ √Hz Specifications subject to change without notice. Parameter Symbol Conditions Min Typ Max Units INPUT CHARACTERISTICS Offset Voltage V OS 30 500 µV Input Bias Current I B 82 0 n A Input Offset Current I OS ± 1 ± 3n A Input Voltage Range V CM 0 +2.0 V Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 2.0 V, –40°C ≤ TA ≤ +125°C 90 110 dB Large Voltage Gain A VO RL = 10 kΩ 750 V/mV Offset Voltage Drift Δ VOS/Δ T 1 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High V OH RL = 10 kΩ to GND 2.9 V Output Voltage Swing Low V OL RL = 10 kΩ to GND 0.7 2 mV POWER SUPPLY Power Supply Rejection Ratio PSRR ± 1.5 V ≤ VS ≤ ± 15 V 90 110 dB –40°C ≤ TA ≤ +125°C8 5 d B Supply Current Per Amplifier I SY VOUT = 1.5 V, RL = ∞ , –40°C ≤ TA ≤ +125°C 150 µA DYNAMIC PERFORMANCE Slew Rate SR R L = 10 kΩ 0.03 V/ µs Gain Bandwidth Product GBP 75 kHz Phase Margin θO 85 Degrees NOISE PERFORMANCE Voltage Noise e n p-p 0.1 Hz to 10 Hz 1.6 µV p-p Voltage Noise Density e n f = 1 kHz 53 nV/ √Hz Current Noise Density i n f = 1 kHz <0.1 pA/ √Hz Specifications subject to change without notice. (@ VS = +5.0 V, VCM = +2.5 V, TA = +258C unless otherwise noted) (@ VS = +3.0 V, VCM = +1.5 V, TA = +258C unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units INPUT CHARACTERISTICS Offset Voltage V OS 30 300 µV –40°C ≤ TA ≤ +125°C 800 µV Input Bias Current I B VCM = 0 V 7 20 nA VCM = 0 V, –40°C ≤ TA ≤ +125°C3 0 n A Input Offset Current I OS VCM = 0 V ± 1 ± 3n A VCM = 0 V, –40°C ≤ TA ≤ +125°C ± 5n A Input Voltage Range V CM –15 +13.5 V Common-Mode Rejection Ratio CMRR – 15.0 V ≤ VCM ≤ +13.5 V, –40°C ≤ TA ≤ +125°C 90 110 dB Large Signal Voltage Gain A VO RL = 10 kΩ 1000 4000 V/mV Offset Voltage Drift Δ VOS/Δ T 1 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High V OH RL = 100 kΩ to GND 14.95 V RL = 10 kΩ to GND 14.80 V Output Voltage Swing Low V OL RL = 100 kΩ to GND –14.95 V RL = 10 kΩ to GND –14.85 V Output Current I OUT ± 15 ± 25 mA POWER SUPPLY Power Supply Rejection Ratio PSRR V S = ± 1.5 V to ± 15 V 90 110 dB VS = ± 1.5 V to ± 15 V, –40°C ≤ TA ≤ +125°C8 5 d B Supply Current I SY VO = 0 V, RL = ∞ , VS = ± 18 V, –40°C ≤ TA ≤ +125°C 175 µA Supply Voltage Range V S +3 (± 1.5) +36 ( ± 18) V DYNAMIC PERFORMANCE Slew Rate SR R L = 10 kΩ 0.03 V/ µs Gain Bandwidth Product GBP 85 kHz Phase Margin θO 83 Degrees NOISE PERFORMANCE Voltage Noise e n p-p 0.1 Hz to 10 Hz 1.25 µV p-p Voltage Noise Density e n f =1 kHz 45 nV/ √Hz Current Noise Density i n f = 1 kHz <0.1 pA/ √Hz Specifications subject to change without notice. WAFER TEST LIMITS Parameter Symbol Conditions Limit Units Offset Voltage Vos 300 µV max Input Bias Current I B 20 nA max Input Offset Current I OS ± 2 nA max Input Voltage Range 1 VCM 0 to +4 V min Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 4 V 90 dB min Power Supply Rejection Ratio PSRR ± 1.5 V ≤ VS ≤ ± 15 V 90 µV/V Large Signal Voltage Gain A VO RL = 10 kΩ 1000 V/mV min Output Voltage Swing High V OH RL = 10 kΩ 4.9 V min Supply Current Per Amplifier I SY VOUT = 2.5 V, RL = ∞ 150 µA max NOTES Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing. 1Guaranteed by CMRR test. ORDERING GUIDE OP295/OP495 REV. B –3– (@ VS = ±15.0 V, TA = +258C unless otherwise noted) Temperature Package Package Model Range Description Option OP295GP –40 °C to +125°C 8-Pin Plastic DIP N-8 OP295GS –40 °C to +125°C 8-Pin SOIC SO-8 OP295GBC +25 °C DICE Temperature Package Package Model Range Description Option OP495GP –40 °C to +125°C 14-Pin Plastic DIP N-14 OP495GS –40 °C to +125°C 16-Pin SOL R-16 OP495GBC +25 °C DICE (@ VS = +5.0 V, VCM = 2.5 V, TA = +258C unless otherwise noted)

REV. B–4– OP295/OP495 ABSOLUTE MAXIMUM RATINGS 1 Storage Temperature Range Operating Temperature Range Junction Temperature Range Package Type uJA 3 uJC Unit 8-Pin Plastic DIP (P) 103 43 °C/W 8-Pin SOIC (S) 158 43 °C/W 14-Pin Plastic DIP (P) 83 39 °C/W 16-Pin SO (S) 98 30 °C/W NOTES 1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted. 2For supply voltages less than ± 18 V, the absolute maximum input voltage is equal to the supply voltage. 3θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket for cerdip, P-DIP, and LCC packages; θJA is specified for device soldered in circuit board for SOIC package. DICE CHARACTERISTICS OP295 Die Size 0.066 × 0.080 inch, 5,280 sq. mils. Substrate (Die Backside) Is Connected to V+. Transistor Count, 74. OP495 Die Size 0.113 × 0.083 inch, 9,380 sq. mils. Substrate (Die Backside) Is Connected to V+. Transistor Count, 196. Typical Characteristics 140 100 –25 –50 120 100 7550250 TEMPERATURE – °C SUPPLY CURRENT PER AMPLIFIER – mA VS = +5V VS = +3V VS = +36V 15.2 –15.2 100 –14.6 –15.0 –25 –14.8 –50 14.2 –14.4 14.4 14.6 14.8 15.0 7550250 TEMPERATURE – °C – OUTPUT SWING – Volts + OUTPUT SWING – Volts VS = –15V R L = 100k R L = 2k R L = 2k R L = 100k R L = 10k R L = 10k Supply Current Per Amplifier vs. Temperature Output Voltage Swing vs. Temperature

REV. B –5– Typical Characteristics–OP295/OP495 3.10 2.50 100 2.80 2.60 –25 2.70 –50 3.00 2.90 7550250 TEMPERATURE – °C OUTPUT VOLTAGE SWING – Volts R L = 2k VS = +3V R L = 100k R L = 10k Output Voltage Swing vs. Temperature 200 250 –200–250 100 125 150 175 200150100500–50–100–150 VS = +5V TA = +25°C INPUT OFFSET VOLTAGE – mV UNITS BASED ON 600 OP AMPS OP295 Input Offset (V OS) Distribution UNITS 250 3.2 0.4 150 100 125 175 200 225 BASED ON 600 OP AMPS VS = +5V –40° £ TA £ +85°C TC – VOS – mV/°C OP295 TC–VOS Distribution 5.10 4.50 100 4.80 4.60 –25 4.70 –50 5.00 4.90 7550250 TEMPERATURE – °C OUTPUT VOLTAGE SWING – Volts VS = +5V R L = 100k R L = 2k R L = 10k Output Voltage Swing vs. Temperature 500 300 150 –50 100 –100 300 200 250 350 400 450 250200150100500 INPUT OFFSET VOLTAGE – mV UNITS VS = +5V TA = +25°C BASED ON 1200 OP AMPS OP495 Input Offset (V OS) Distribution 500 3.2 150 0.4 100 300 200 250 350 400 450 TC – VOS – mV/°C UNITS VS = +5V –40° £ TA £ +85°C BASED ON 1200 OP AMPS OP495 TC–VOS Distribution

REV. B–6– OP295/OP495–Typical Characteristics VS = +5V 100 –25 –50 7550250 TEMPERATURE – °C INPUT BIAS CURRENT – nA Input Bias Current vs. Temperature VS = +5V TEMPERATURE – °C 100 –25–50 7550250 VS = –15V SOURCE SINK SOURCE SINK OUTPUT CURRENT – mA Output Current vs. Temperature TEMPERATURE – °C OPEN-LOOP GAIN – V/ mV R L = 2k 100 –50 25 1000–25 50 75 VS = –15V VO = –10V R L = 10k R L = 100k Open-Loop Gain vs. Temperature 100 –25 –50 7550250 TEMPERATURE – °C OPEN-LOOP GAIN – V/ mV VS = +5V VO = +4V R L = 100k R L = 10k R L = 2k Open-Loop Gain vs. Temperature 100mV 1mA1 0 mA 10mA 1mA100mA 100mV 10mV 1mV LOAD CURRENT OUTPUT VOLTAGE D TO RAIL SOURCE SINK VS = +5V TA = +25°C Output Voltage to Supply Rail vs. Load Current

REV. B –7– Rail-to-Rail Applications Information The OP295/OP495 has a wide common-mode input range ex- tending from ground to within about 800 mV of the positive supply. There is a tendency to use the OP295/OP495 in buffer applications where the input voltage could exceed the common- mode input range. This may initially appear to work because of the high input range and rail-to-rail output range. But above the common-mode input range the amplifier is, of course, highly nonlinear. For this reason it is always required that there be some minimal amount of gain when rail-to-rail output swing is desired. Based on the input common-mode range this gain should be at least 1.2. Low Drop-Out Reference The OP295/OP495 can be used to gain up a 2.5 V or other low voltage reference to 4.5 volts for use with high resolution A/D converters that operate from +5 volt only supplies. The circuit in Figure 1 will supply up to 10 mA. Its no-load drop-out volt- age is only 20 mV. This circuit will supply over 3.5 mA with a +5 volt supply. 16k VOUT = 4.5V

1 TO 10mF

0.001mF 20k REF43 +5V +5V OP295/ OP495 Figure 1. 4.5 Volt, Low Drop-Out Reference tics of low noise and single supply operation is rather limited. used, leaving the other uncommitted op amp for use elsewhere. Figure 2. Low Noise Single Supply Preamplifier Hz and 10 nV/√Hz, respectively. ance such as magnetic pickups or low impedance strain gages. width will reduce to approximately 250 Hz.

REV. B–12– OP295/OP495 C1806a–10–7/95PRINTED IN U.S.A. OUTLINE DIMENSIONS Dimensions shown in inches and (mm)

8 Lead Plastic DIP (P Suffix)

0.160 (4.06) 0.115 (2.93) 0.130 (3.30) MIN 0.210 (5.33) MAX 0.015 (0.381) TYP 0.430 (10.92) 0.348 (8.84) 0.280 (7.11) 0.240 (6.10) 0.070 (1.77) 0.045 (1.15) 0.022 (0.558) 0.014 (0.356) 0.325 (8.25) 0.300 (7.62) 0°- 15° 0.100 (2.54) BSC 0.015 (0.381) 0.008 (0.204) SEATING PLANE 0.195 (4.95) 0.115 (2.93) 14-Lead Plastic DIP (P Suffix) PIN 1 0.280 (7.11) 0.240 (6.10) 814 0.210 (5.33) MAX 0.160 (4.06) 0.115 (2.92) 0.795 (20.19) 0.725 (18.42) 0.022 (0.558) 0.014 (0.36) 0.100 (2.54) BSC 0.070 (1.77) 0.045 (1.15) SEATING PLANE 0.130 (3.30) MIN 0.015 (0.381) MIN 0.325 (8.25) 0.300 (7.62) 0.015 (0.38) 0.008 (0.20) 15° 8-Lead Narrow-Body SO (S Suffix) 0.0098 (0.25) 0.0075 (0.19) 0.0500 (1.27) 0.0160 (0.41) 0.0196 (0.50) 0.0099 (0.25)x 45° PIN 1 0.1574 (4.00) 0.1497 (3.80) 0.2440 (6.20) 0.2284 (5.80) 0.0192 (0.49) 0.0138 (0.35) 0.0500 (1.27) BSC 0.0688 (1.75) 0.0040 (0.10) 0.1968 (5.00) 0.1890 (4.80) 16-Lead Wide-Body SO (S Suffix) PIN 1 0.2992 (7.60) 0.2914 (7.40) 0.4193 (10.65) 0.3937 (10.00) 16 9 0.0192 (0.49) 0.0138 (0.35) 0.0500 (1.27) BSC 0.1043 (2.65) 0.0926 (2.35) 0.4133 (10.50) 0.3977 (10.10) 0.0118 (0.30) 0.0091 (0.23) 0.0500 (1.27) 0.0157 (0.40) 0.0291 (0.74) 0.0098 (0.25)x 45°