OP291G

OP191_06 AD | Alldatasheet

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Rev. D | Page 2 of 24 TABLE OF CONTENTS A 3 V , Cold Junction Compensated Thermocouple Amplifier

REVISION HISTORY

4/06—Rev. C to Rev. D 3/04—Rev. B to Rev. C. 11/03—Rev. A to Rev. B. 12/02—Rev. 0 to Rev. A.

Rev. D | Page 3 of 24 SPECIFICATIONS ELECTRICAL SPECIFICATIONS @ VS = 3.0 V , VCM = 0.1 V , VO = 1.4 V , TA = 25°C, unless otherwise noted. Table 1. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage OP191G VOS 80 500 μV −40°C ≤ TA ≤ +125°C 1 mV OP291G/OP491G VOS 80 700 μV Input Bias Current IB 30 65 nA −40°C ≤ TA ≤ +125°C 95 nA Input Offset Current IOS 0.1 11 nA −40°C ≤ TA ≤ +125°C 22 nA Input Voltage Range 0 3 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.9 V 70 90 dB −40°C ≤ TA ≤ +125°C 65 87 dB Large Signal Voltage Gain AVO RL = 10 kΩ, VO = 0.3 V to 2.7 V 25 70 V/mV −40°C ≤ TA ≤ +125°C 50 V/mV Offset Voltage Drift ∆VOS/∆T 1.1 μV/°C Bias Current Drift ∆IB/∆T 100 pA/°C Offset Current Drift ∆IOS/∆T 20 pA/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 100 kΩ to GND 2.95 2.99 V −40°C to +125°C 2.90 2.98 V RL = 2 kΩ to GND 2.8 2.9 V −40°C to +125°C 2.70 2.80 V Output Voltage Low VOL RL = 100 kΩ to V+ 4.5 10 mV −40°C to +125°C 35 mV RL = 2 kΩ to V+ 40 75 mV −40°C to +125°C 130 mV Short-Circuit Limit ISC Sink/source ±8.75 ±13.50 mA Open-Loop Impedance ZOUT f = 1 MHz, AV = 1 200 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 12 V 80 110 dB −40°C ≤ TA ≤ +125°C 75 110 dB Supply Current/Amplifier ISY VO = 0 V 200 350 μA −40°C ≤ TA ≤ +125°C 330 480 μA DYNAMIC PERFORMANCE Slew Rate +SR RL = 10 kΩ 0.4 V/μs Slew Rate –SR RL = 10 kΩ 0.4 V/μs Full-Power Bandwidth BWP 1% distortion 1.2 kHz Settling Time tS To 0.01% 22 μs Gain Bandwidth Product GBP 3 MHz Phase Margin θO 45 Degrees Channel Separation CS f = 1 kHz, RL = 10 kΩ 145 dB NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 2 μV p-p Voltage Noise Density en f = 1 kHz 30 nV/√Hz Current Noise Density in 0.8 pA/√Hz

Rev. D | Page 4 of 24 Table 2. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage OP191 VOS 80 500 μV OP291/OP491 VOS 80 700 μV Input Bias Current IB 30 65 nA −40°C ≤ TA ≤ +125°C 95 nA Input Offset Current IOS 0.1 11 nA −40°C ≤ TA ≤ +125°C 22 nA Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 4.9 V 70 93 dB –40°C ≤ TA ≤ +125°C 65 90 dB Large Signal Voltage Gain AVO RL = 10 kΩ, VO = 0.3 V to 4.7 V 25 70 V/mV −40°C ≤ TA ≤ +125°C 50 V/mV Offset Voltage Drift ∆VOS/∆T −40°C ≤ TA ≤ +125°C 1.1 μV/°C Bias Current Drift ∆IB/∆T 100 pA/°C Offset Current Drift ∆IOS/∆T 20 pA/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 100 kΩ to GND 4.95 4.99 V −40°C to +125°C 4.90 4.98 V RL = 2 kΩ to GND 4.8 4.85 V −40°C to +125°C 4.65 4.75 V Output Voltage Low VOL RL = 100 kΩ to V+ 4.5 10 mV −40°C to +125°C 35 mV RL = 2 kΩ to V+ 40 75 mV −40°C to +125°C 155 mV Short-Circuit Limit ISC Sink/source ±8.75 ±13.5 mA Open-Loop Impedance ZOUT f = 1 MHz, AV = 1 200 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 12 V 80 110 dB −40°C ≤ TA ≤ +125°C 75 110 dB Supply Current/Amplifier ISY VO = 0 V 220 400 μA −40°C ≤ TA ≤ +125°C 350 500 μA DYNAMIC PERFORMANCE Slew Rate +SR RL = 10 kΩ 0.4 V/μs Slew Rate –SR RL = 10 kΩ 0.4 V/μs Full-Power Bandwidth BWP 1% distortion 1.2 kHz Settling Time tS To 0.01% 22 μs Gain Bandwidth Product GBP 3 MHz Phase Margin θO 45 Degrees Channel Separation CS f = 1 kHz, RL = 10 kΩ 145 dB NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 2 μV p-p Voltage Noise Density en f = 1 kHz 42 nV/√Hz Current Noise Density in 0.8 pA/√Hz

Rev. D | Page 5 of 24 @ VO = ±5.0 V , –4.9 V ≤ VCM ≤ +4.9 V , TA = +25°C, unless otherwise noted. Table 3. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage OP191 VOS 80 500 μV −40°C ≤ TA ≤ +125°C 1 mV OP291/OP491 VOS 80 700 μV Input Bias Current IB 30 65 nA −40°C ≤ TA ≤ +125°C 95 nA Input Offset Current IOS 0.1 11 nA −40°C ≤ TA ≤ +125°C 22 nA Input Voltage Range −5 +5 V Common-Mode Rejection Ratio CMRR VCM = ±5 V 75 100 dB −40°C ≤ TA ≤ +125°C 67 97 dB Large Signal Voltage Gain AVO RL = +10 kΩ, VO = ±4.7 V 25 70 −40°C ≤ TA ≤ +125°C 50 V/mV Offset Voltage Drift ∆VOS/∆T 1.1 μV/°C Bias Current Drift ∆IB/∆T 100 pA/°C Offset Current Drift ∆IOS/∆T 20 pA/°C OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 100 kΩ to GND ±4.93 ±4.99 V RL = 2 kΩ to GND ±4.80 ±4.95 V Short-Circuit Limit ISC Sink/source ±8.75 ±16.00 mA −40°C to +125°C ±6 ±13 mA Open-Loop Impedance ZOUT f = 1 MHz, AV = 1 200 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±5 V 80 110 dB −40°C ≤ TA ≤ +125°C 75 100 dB Supply Current/Amplifier ISY VO = 0 V 260 420 μA −40°C ≤ TA ≤ +125°C 390 550 μA DYNAMIC PERFORMANCE Slew Rate ±SR RL = 10 kΩ 0.5 V/μs Full-Power Bandwidth BWP 1% distortion 1.2 kHz Settling Time tS To 0.01% 22 μs Gain Bandwidth Product GBP 3 MHz Phase Margin θO 45 Degrees Channel Separation CS f = 1 kHz 145 dB NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 2 μV p-p Voltage Noise Density en f = 1 kHz 42 nV/√Hz Current Noise Density in 0.8 pA/√Hz

Figure 6. Input and Output with Inputs Overdriven by 5 V

parts, unless otherwise noted. Table 5. Thermal Resistance degradation or loss of functionality.

1200 OP AMPS

Figure 7. OP291 Input Offset Voltage Distribution, VS = 3 V Figure 8. OP291 Input Offset Voltage Drift Distribution, VS = 3 V Figure 9. Input Offset Voltage vs. Temperature, VS = 3 V Figure 10. Input Bias Current vs. Temperature, VS = 3 V Figure 11. Input Offset Current vs. Temperature, VS = 3 V Figure 12. Input Bias Current vs. Input Common-Mode Voltage, VS = 3 V

Rev. D | Page 19 of 24

APPLICATIONS

SINGLE 3 V SUPPLY, INSTRUMENTATION AMPLIFIER The OP291 low supply current and low voltage operation make it ideal for battery-powered applications, such as the instrumentation amplifier shown in Figure 65. The circuit uses the classic two op amp instrumentation amplifier topology, with four resistors to set the gain. The equation is simply that of a noninverting amplifier, as shown in Figure 65. The two resistors should be included across the second resistor labeled R1. Figure 65. Single 3 V Supply Instrumentation Amplifier only 600 μA yet still exhibits a gain bandwidth of 3 MHz. situations unless a false ground between the supplies is created. output swing, this circuit works with supplies as low as 4.0 V . resistance in both 100 Ω legs of the bridge to improve accuracy.

10 TURNS

Figure 66. Single-Supply RTD Amplifier combination creates a pole at 1.6 kHz.

2.5 V references require a minimum operating supply voltage of

circuit draws less than 420 μA from a 3 V supply at 25°C. Figure 67. A 2.5 V Reference that Operates on a Single 3 V Supply

5 V ONLY, 12-BIT DAC SWINGS RAIL-TO-RAIL

generate a digitally controlled voltage with a wide output range. which is inverting and, therefore, unsuitable for single supply. Figure 68. 5 V Only, 12-Bit DAC Swings Rail-to-Rail by altering the value of the resistors. term reliability over a wide range of load current conditions. Figure 69. A High-Side Load Current Monitor

within ±3°C without linearization.

10 TURN

Figure 70. A 3 V, Cold Junction Compensated Thermocouple Amplifier the ac-coupled bipolar input signals. A1 to cancel the transmit signal from the transformer. Figure 71. Single-Supply, Direct Access Arrangement for Modems transformer at the frequency of transmission.

3 V, 50 HZ/60 HZ ACTIVE NOTCH FILTER WITH

Figure 72. A 3 V Single-Supply, 50 Hz/60 Hz Active Notch Filter Amplifier A3 is the heart of the false ground bias circuit. frequency range of the filter. 1% resistors and 5% capacitors produces satisfactory results. above 0 V , the output of Amplifier A1 follows the input signal. signal is below 0 V , the output voltage of A1 is forced to 0 V . follower because the noninverting terminal of A2 is also at 0 V . version of the input signal is available at VOUTB. Figure 73. Single-Supply, Half-Wave, and Full-Wave Rectifiers

Rev. D | Page 24 of 24 ORDERING GUIDE Model Temperature Range Package Description Package Option OP191GS −40°C to +125°C 8-Lead SOIC R-8 [S-Suffix] OP191GS-REEL −40°C to +125°C 8-Lead SOIC R-8 [S-Suffix] OP191GS-REEL7 −40°C to +125°C 8-Lead SOIC R-8 [S-Suffix] OP191GSZ1 −40°C to +125°C 8-Lead SOIC R-8 [S-Suffix] OP191GSZ-REEL1 −40°C to +125°C 8-Lead SOIC R-8 [S-Suffix] OP191GSZ-REEL71 −40°C to +125°C 8-Lead SOIC R-8 [S-Suffix] OP291GS −40°C to +125°C 8-Lead SOIC R-8 [S-Suffix] OP291GS-REEL −40°C to +125°C 8-Lead SOIC R-8 [S-Suffix] OP291GS-REEL7 −40°C to +125°C 8-Lead SOIC R-8 [S-Suffix] OP291GSZ1 −40°C to +125°C 8-Lead SOIC R-8 [S-Suffix] OP291GSZ-REEL1 −40°C to +125°C 8-Lead SOIC R-8 [S-Suffix] OP291GSZ-REEL71 −40°C to +125°C 8-Lead SOIC R-8 [S-Suffix] OP491GP −40°C to +125°C 14-Lead PDIP N-14 [P-Suffix] OP491GPZ1 −40°C to +125°C 14-Lead PDIP N-14 [P-Suffix] OP491GS −40°C to +125°C 14-Lead SOIC R-14 [S-Suffix] OP491GS-REEL −40°C to +125°C 14-Lead SOIC R-14 [S-Suffix] OP491GS-REEL7 −40°C to +125°C 14-Lead SOIC R-14 [S-Suffix] OP491GSZ1 −40°C to +125°C 14-Lead SOIC R-14 [S-Suffix] OP491GSZ-REEL1 −40°C to +125°C 14-Lead SOIC R-14 [S-Suffix] OP491GSZ-REEL71 −40°C to +125°C 14-Lead SOIC R-14 [S-Suffix] OP491GRU-REEL −40°C to +125°C 14-Lead TSSOP RU-14 OP491GRUZ-REEL1 −40°C to +125°C 14-Lead TSSOP RU-14 OP491GBC DIE 1 Z = Pb-free part. ©2006 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the prop erty of their respective owners. C00294-0-4/06(D)