OP284ES

OP184_06 AD | Alldatasheet

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Input and Output Operational Amplifiers OP184/OP284/OP484 Rev. D Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2006 Analog Devices, Inc. All rights reserved.

FEATURES

Wide bandwidth: 4 MHz Low offset voltage: 65 μV Unity-gain stable High slew rate: 4.0 V/μs Low noise: 3.9 nV/√Hz

APPLICATIONS

Battery-powered instrumentation Power supply control and protection Telecom DAC output amplifier ADC input buffer GENERAL DESCRIPTION The OP184/OP284/OP484 are single, dual, and quad single-supply,

4 MHz bandwidth amplifiers featuring rail-to-rail inputs and

outputs. They are guaranteed to operate from 3 V to 36 V (or ±1.5 V to ±18 V) and function with a single supply as low as 1.5 V . These amplifiers are superb for single-supply applications requiring both ac and precision dc performance. The combi- nation of bandwidth, low noise, and precision makes the OP184/OP284/OP484 useful in a wide variety of applications, including filters and instrumentation. Other applications for these amplifiers include portable telecom equipment, power supply control and protection, and as amplifiers or buffers for transducers with wide output ranges. Sensors requiring a rail-to-rail input amplifier include Hall effect, piezo electric, and resistive transducers. The ability to swing rail-to-rail at both the input and output enables designers to build multistage filters in single-supply systems and to maintain high signal-to-noise ratios. The OP184/OP284/OP484 are specified over the hot extended industrial (–40°C to +125°C) temperature range. The single is available in 8-lead SOIC surface mount packages. The dual is available in 8-lead PDIP and SOIC surface mount packages. The quad OP484 is available in 14-lead PDIP and 14-lead, narrow-body SOIC packages. PIN CONFIGURATIONS OUT A NULL NCNULL –IN A +IN A NC = NO CONNECT 00293-001 TOP VIEW (Not to Scale) OP184 Figure 1. 8-Lead SOIC (S-Suffix) Figure 2. 8-Lead PDIP (P-Suffix) Figure 3. 14-Lead PDIP (P-Suffix)

Rev. D | Page 2 of 24 TABLE OF CONTENTS Designing Low Noise Circuits in Single-Supply

REVISION HISTORY

4/06—Rev. C to Rev. D 3/06—Rev. B to Rev. C 9/02—Rev. A to Rev. B 6/02—Rev. 0 to Rev. A

Rev. D | Page 3 of 24 SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

@ VS = 5.0 V , VCM = 2.5 V , TA = 25°C, unless otherwise noted. Table 1. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage, OP184/OP284E Grade1 VOS 65 μV −40°C ≤ TA ≤ +125°C 165 μV Offset Voltage, OP184/OP284F Grade1 VOS 125 μV −40°C ≤ TA ≤ +125°C 350 μV Offset Voltage, OP484E Grade1 VOS 75 μV –40°C ≤ TA ≤ +125°C 175 μV Offset Voltage, OP484F Grade1 VOS 150 μV –40°C ≤ TA ≤ +125°C 450 μV Input Bias Current IB 60 450 nA –40°C ≤ TA ≤ +125°C 600 nA Input Offset Current IOS 2 50 nA –40°C ≤ TA ≤ +125°C 50 nA Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 5 V 60 dB VCM = 1.0 V to 4.0 V, −40°C ≤ TA ≤ +125°C 86 dB Large Signal Voltage Gain AVO RL = 2 kΩ, 1 V ≤ VO ≤ 4 V 50 240 V/mV RL = 2 kΩ, −40°C ≤ TA ≤ +125°C 25 V/mV Bias Current Drift ΔIB/ΔT 150 pA/°C OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1.0 mA 4.85 V Output Voltage Low VOL IL = 1.0 mA 125 mV Output Current IOUT ±6.5 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.0 V to 10 V, −40°C ≤ TA ≤ +125°C 76 dB Supply Current/Amplifier ISY VO = 2.5 V, −40°C ≤ TA ≤ +125°C 1.45 mA Supply Voltage Range VS 3 36 V DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 1.65 2.4 V/μs Settling Time tS To 0.01%, 1.0 V step 2.5 μs Gain Bandwidth Product GBP 3.25 MHz Phase Margin Øo 45 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.3 μV p-p Voltage Noise Density en f = 1 kHz 3.9 nV/√Hz Current Noise Density in 0.4 pA/√Hz 1 Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.

Rev. D | Page 4 of 24 @ VS = 3.0 V , VCM = 1.5 V , TA = 25°C, unless otherwise noted. Table 2. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage, OP184/OP284E Grade1 V OS 65 μV −40°C ≤ T A ≤ +125°C 165 μV Offset Voltage, OP184/OP284F Grade1 V OS 125 μV −40°C ≤ T A ≤ +125°C 350 μV Offset Voltage, OP484E Grade1 V OS 100 μV –40°C ≤ T A ≤ +125°C 200 μV Offset Voltage, OP484F Grade1 V OS 150 μV –40°C ≤ T A ≤ +125°C 450 μV Input Bias Current I B 60 450 nA −40°C ≤ T A ≤ +125°C 600 nA Input Offset Current I OS −40°C ≤ T A ≤ +125°C 50 nA Input Voltage Range 0 3 V Common-Mode Rejection Ratio CMRR V CM = 0 V to 3 V 60 dB V CM = 0 V to 3 V, −40°C ≤ TA ≤ +125°C 56 dB OUTPUT CHARACTERISTICS Output Voltage High V OH I L = 1.0 mA 2.85 V Output Voltage Low V OL I L = 1.0 mA 125 mV POWER SUPPLY Power Supply Rejection Ratio PSRR V S = ±1.25 V to ±1.75 V 76 dB Supply Current/Amplifier I SY V O = 1.5 V, −40°C ≤ TA ≤ +125°C 1.35 mA DYNAMIC PERFORMANCE Gain Bandwidth Product GBP 3 MHz NOISE PERFORMANCE Voltage Noise Density e n f = 1 kHz 3.9 nV/√Hz 1 Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.

Rev. D | Page 5 of 24 @ VS = ±15.0 V , VCM = 0 V , TA = 25°C, unless otherwise noted. Table 3. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage, OP184/OP284E Grade1 VOS 100 μV −40°C ≤ TA ≤ +125°C 200 μV Offset Voltage, OP184/OP284F Grade1 VOS 175 μV −40°C ≤ TA ≤ +125°C 375 μV Offset Voltage, OP484E Grade1 VOS 150 μV −40°C ≤ TA ≤ +125°C 300 μV Offset Voltage, OP484F Grade1 VOS 250 μV −40°C ≤ TA ≤ +125°C 500 μV Input Bias Current IB 80 450 nA −40°C ≤ TA ≤ +125°C 575 nA Input Offset Current IOS −40°C ≤ TA ≤ +125°C 50 nA Input Voltage Range −15 +15 V Common-Mode Rejection Ratio CMRR VCM = −14.0 V to +14.0 V, −40°C ≤ TA ≤ +125°C 86 90 dB VCM = −15.0 V to +15.0 V 80 dB Large Signal Voltage Gain AVO RL = 2 kΩ, −10 V ≤ VO ≤ 10 V 150 1000 V/mV RL = 2 kΩ, −40 V ≤ TA ≤ +125°C 75 V/mV Offset Voltage Drift E Grade ΔVOS/ΔT 0.2 2.00 μV/°C Bias Current Drift ΔVB/ΔT B 150 pA/°C OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1.0 mA 14.8 V Output Voltage Low VOL IL = 1.0 mA −14.875 V Output Current IOUT ±10 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±2.0 V to ±18 V, −40°C ≤ TA ≤ +125°C 90 dB Supply Current/Amplifier ISY VO = 0 V, −40°C ≤ TA ≤ +125°C 2.0 mA Supply Current/Amplifier ISY VS = ±18 V, −40°C ≤ TA ≤ +125°C 2.25 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 2.4 4.0 V/μs Full-Power Bandwidth BWp 1% distortion, RL = 2 kΩ, VO = 29 V p-p 35 kHz Settling Time tS To 0.01%, 10 V step 4 μs Gain Bandwidth Product GBP 4.25 MHz Phase Margin Øo 50 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.3 μV p-p Voltage Noise Density en f = 1 kHz 3.9 nV/√Hz Current Noise Density in 0.4 pA/√Hz 1 Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.

Table 4. Stresses above those listed under Absolute Maximum Ratings parts, unless otherwise noted. specified for device soldered in circuit board for SOIC packages. degradation or loss of functionality. Figure 4. Simplified Schematic

is better than 80 dB over the frequency range of 20 Hz to 20 kHz. change in load current of ±1 mA. Figure 53. 2.5 V Reference That Operates on a Single 3 V Supply

5 V ONLY, 12-BIT DAC SWINGS RAIL-TO-RAIL

13 C RdB f π=

2.5 V REFERENCE FROM A 3 V SUPPLY OUT, and the output voltage is

inverting and not usable in single-supply applications.

2.5 V references require at least a minimum operating supply of

13 DAC8043

Figure 54. 5 V Only, 12-Bit DAC Swings Rail-to-Rail output to drive any following circuitry. Figure 52. Single Supply, 3 V Low Noise Instrumentation Amplifier

0 V ≤ V

Figure 56, connected from the output of the device to ground. of a pass transistor over a wide range of load current conditions. Figure 56. Snubber Network Compensates for Capacitive Load Figure 57. The top trace was taken ringing is dramatically reduced. Figure 57. Overshoot and Ringing Is Reduced by Adding a Snubber Network Table 6. Snubber Networks for Large Capacitive Loads CAPACITIVE LOAD DRIVE CAPABILITY

swing allows easy drive to a low saturation voltage pass device.

9 V range system sources or anywhere that low dropout

compromising overall performance. Figure 58. Low Dropout Regulator with Current Limiting

active filter to reject 50 Hz interference. maintain this threshold voltage between 20 mV and 50 mV . Figure 59. A 3 V Single-Supply, 50Hz to 60 Hz Active Notch Filter leaving the U1A/U1B amplifiers and Q1 still active. matching of the capacitors and resistors in the Twin-T section. capacitors produces satisfactory results.

3 V, 50 HZ/60 HZ ACTIVE NOTCH FILTER WITH

line interference in portable patient monitoring equipment.

Rev. D | Page 22 of 24 ORDERING GUIDE Model Temperature Range Package Description Package Option OP184ES −40°C to +125°C 8-Lead SOIC R-8 OP184ES-REEL −40°C to +125°C 8-Lead SOIC R-8 OP184ES-REEL7 −40°C to +125°C 8-Lead SOIC R-8 OP184ESZ1 −40°C to +125°C 8-Lead SOIC R-8 OP184ESZ-REEL1 −40°C to +125°C 8-Lead SOIC R-8 OP184ESZ-REEL71 −40°C to +125°C 8-Lead SOIC R-8 OP184FS −40°C to +125°C 8-Lead SOIC R-8 OP184FS-REEL −40°C to +125°C 8-Lead SOIC R-8 OP184FS–REEL7 −40°C to +125°C 8-Lead SOIC R-8 OP184FSZ1 −40°C to +125°C 8-Lead SOIC R-8 OP184FSZ-REEL1 −40°C to +125°C 8-Lead SOIC R-8 OP184FSZ-REEL71 −40°C to +125°C 8-Lead SOIC R-8 OP284EP −40°C to +125°C 8-Lead PDIP N-8 OP284EPZ1 −40°C to +125°C 8-Lead PDIP N-8 OP284ES −40°C to +125°C 8-Lead SOIC R-8 OP284ES-REEL −40°C to +125°C 8-Lead SOIC R-8 OP284ES-REEL7 −40°C to +125°C 8-Lead SOIC R-8 OP284ESZ1 −40°C to +125°C 8-Lead SOIC R-8 OP284ESZ-REEL1 −40°C to +125°C 8-Lead SOIC R-8 OP284ESZ-REEL71 −40°C to +125°C 8-Lead SOIC R-8 OP284FS −40°C to +125°C 8-Lead SOIC R-8 OP284FS-REEL −40°C to +125°C 8-Lead SOIC R-8 OP284FS-REEL7 −40°C to +125°C 8-Lead SOIC R-8 OP284FSZ1 −40°C to +125°C 8-Lead SOIC R-8 OP284FSZ-REEL1 −40°C to +125°C 8-Lead SOIC R-8 OP284FSZ-REEL71 −40°C to +125°C 8-Lead SOIC R-8 OP284GBC Die OP484ES −40°C to +125°C 14-Lead SOIC R-14 OP484ES-REEL −40°C to +125°C 14-Lead SOIC R-14 OP484ESZ1 −40°C to +125°C 14-Lead SOIC R-14 OP484ESZ-REEL1 −40°C to +125°C 14-Lead SOIC R-14 OP484FP −40°C to +125°C 14-Lead PDIP N-14 OP484FPZ1 −40°C to +125°C 14-Lead PDIP N-14 OP484FS −40°C to +125°C 14-Lead SOIC R-14 OP484FS-REEL −40°C to +125°C 14-Lead SOIC R-14 OP484FS-REEL7 −40°C to +125°C 14-Lead SOIC R-14 OP484FSZ1 −40°C to +125°C 14-Lead SOIC R-14 OP484FSZ-REEL1 −40°C to +125°C 14-Lead SOIC R-14 OP484FSZ-REEL71 −40°C to +125°C 14-Lead SOIC R-14 1 Z = Pb-free part.

Rev. D | Page 23 of 24 NOTES

Rev. D | Page 24 of 24 NOTES ©2006 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. C00293-0-4/06(D)