OP281

OP281_V01 AD | Alldatasheet

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Rev. D | Page 2 of 20 TABLE OF CONTENTS

REVISION HISTORY

9/08—Rev. C to Rev. D 10/07—Rev. B to Rev. C 3/03—Rev. A to Rev. B 2/03—Rev. 0 to Rev. A Deleted 8-Lead and 14-Lead Plastic DIP (N-8 and N-14)

Rev. D | Page 3 of 20 SPECIFICATIONS ELECTRICAL SPECIFICATIONS VS = 3.0 V , VCM = 1.5 V , TA = 25°C, unless otherwise noted. Table 1. Parameter Symbol Condition Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage1 VOS 1.5 mV Input Bias Current IB −40°C ≤ TA ≤ +85°C 3 10 nA Input Offset Current IOS −40°C ≤ TA ≤ +85°C 0.1 7 nA Input Voltage Range 0 2 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.0 V, −40°C ≤ TA ≤ +85°C 65 95 dB Large-Signal Voltage Gain AVO R L = 1 MΩ, VO = 0.3 V to 2.7 V 5 13 V/mV −40°C ≤ TA ≤ +85°C 2 V/mV Offset Voltage Drift ΔVOS/∆T −40°C to +85°C 10 μV/°C Bias Current Drift ΔIB/ΔT 20 pA/°C Offset Current Drift ΔIOS/ΔT 2 pA/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 100 kΩ to GND, −40°C ≤ TA ≤ +85°C 2.925 2.96 V Output Voltage Low VOL RL = 100 kΩ to V+, −40°C ≤ TA ≤ +85°C 25 75 mV Short-Circuit Limit ISC ±1.1 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 12 V, −40°C ≤ TA ≤ +85°C 76 95 dB Supply Current/Amplifier ISY VO = 0 V 3 4 μA −40°C ≤ TA ≤ +85°C 5 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 100 kΩ, CL = 50 pF 25 V/ms Turn-On Time AV = 1, VO = 1 V 40 μs AV = 20, VO = 1 V 50 μs Saturation Recovery Time 65 μs Gain Bandwidth Product GBP 95 kHz Phase Margin φM 70 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 10 μV p-p Voltage Noise Density en f = 1 kHz 75 nV/√Hz Current Noise Density in <1 pA/√Hz 1 VOS is tested under a no load condition.

Rev. D | Page 4 of 20 VS = 5.0 V , VCM = 2.5 V , TA = 25°C, unless otherwise noted. Table 2. Parameter Symbol Condition Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage1 VOS 0.1 1.5 mV Input Bias Current IB −40°C ≤ TA ≤ +85°C 3 10 nA Input Offset Current IOS −40°C ≤ TA ≤ +85°C 0.1 7 nA Input Voltage Range 0 4 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 4.0 V, −40°C ≤ TA ≤ +85°C 65 90 dB Large-Signal Voltage Gain AVO RL = 1 MΩ, VO = 0.5 V to 4.5 V 5 15 V/mV −40°C ≤ TA ≤ +85°C 2 V/mV Offset Voltage Drift ΔVOS/ΔT −40°C to +85°C 10 μV/°C Bias Current Drift ΔIB/ΔT 20 pA/°C Offset Current Drift ΔIOS/ΔT 2 pA/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 100 kΩ to GND, −40°C ≤ TA ≤ +85°C 4.925 4.96 V Output Voltage Low VOL RL = 100 kΩ to V+, −40°C ≤ TA ≤ +85°C 25 75 mV Short-Circuit Limit ISC ±3.5 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 12 V, −40°C ≤ TA ≤ +85°C 76 95 dB Supply Current/Amplifier ISY VO = 0 V 3.2 4 μA −40°C ≤ TA ≤ +85°C 5 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 100 kΩ, CL = 50 pF 27 V/ms Saturation Recovery Time 120 μs Gain Bandwidth Product GBP 100 kHz Phase Margin φM 74 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 10 μV p-p Voltage Noise Density en f = 1 kHz 75 nV/√Hz Current Noise Density in <1 pA/√Hz 1 VOS is tested under a no load condition.

Rev. D | Page 5 of 20 VS = ±5.0 V , TA = +25°C, unless otherwise noted. Table 3. Parameter Symbol Condition Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage1 VOS 0.1 1.5 mV Input Bias Current IB –40°C ≤ TA ≤ +85°C 3 10 nA Input Offset Current IOS –40°C ≤ TA ≤ +85°C 0.1 7 nA Input Voltage Range –5 +4 V Common-Mode Rejection CMRR VCM = –5.0 V to +4.0 V, –40°C ≤ TA ≤ +85°C 65 95 dB Large-Signal Voltage Gain AVO RL = 1 MΩ, VO = ±4.0 V, 5 13 V/mV –40°C ≤ TA ≤ +85°C 2 V/mV Offset Voltage Drift ΔVOS/ΔT –40°C to +85°C 10 μV/°C Bias Current Drift ΔIB/ΔT 20 pA/°C Offset Current Drift ΔIOS/ΔT 2 pA/°C OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 100 kΩ to GND, –40°C ≤ TA ≤ +85°C ±4.925 ±4.98 V Short-Circuit Limit ISC 12 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±1.35 V to ±6 V, –40°C ≤ TA ≤ +85°C 76 95 dB Supply Current/Amplifier ISY VO = 0 V 3.3 5 μA –40°C ≤ TA ≤ +85°C 6 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 100 kΩ, CL = 50 pF 28 V/ms Gain Bandwidth Product GBP 105 kHz Phase Margin φM 75 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 10 μV p-p Voltage Noise Density en f = 1 kHz 85 nV/√Hz f = 10 kHz 75 nV/√Hz Current Noise Density in <1 pA/√Hz 1 VOS is tested under a no load condition.

Table 5. Thermal Resistance soldered in circuit board for TSSOP and SOIC packages.

resistors are used to provide the dc offset for single-supply use. establishing an ac ground for the volume-control potentiometer. outside the frequency range for telephone audio signals. Figure 45. Two-Way Amplifier in a Battery-Powered Telephone Headset

0.65 BSC

6.40 BSC

Figure 48. 8-Lead Thin Shrink Small Outline Package [TSSOP] Figure 49. 14-Lead Thin Shrink Small Outline Package [TSSOP]

Rev. D | Page 19 of 20 NOTES

Rev. D | Page 20 of 20 NOTES ©1996–2008 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the prop erty of their respective owners. D00291-0-9/08(D)