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i LIN f ] \\ OP-227/OP-237 + TECHNOLOGY Dual Matched Low Noise Precision Op Amp and Dual High Speed Low Noise Precision Op Amp FEATURES DESCRIPTION = Guaranteed 80. Max. Vos The OP-227 is a dual matched precision op amp which = Guaranteed 6.0nV//Hz 10Hz Voltage Noise Density combines low offset, low noise, and high gain with ex- = Guaranteed 3.9nV/VHz 1kHz Voltage Noise Density cellent matching characteristics. Typical individual = Guaranteed 1pV/°C Max. Vos Drift amplifier specifications of 20uV Vos, 0.2uV/°C drift, = Guaranteed 1 Million Min. Voltage Gain 10nA Ig and 2.8nV/VHz 10Hz noise voltage density = Guaranteed Matching Characteristics make the OP-227 an impressive performer in terms of = Guaranteed 10V/pys Min. Slew Rate (OP-237) single amplifiers. Matching characteristics are specified with guaranteed limits on all critical parameters including Vos, Vos drift, Ipias and CMRR (see the Features sec- APPLICATIONS tion), which make the OP-227 an ideal choice for two and « Instrumentation Amplifiers three op amp instrumentation amplifier applications. = Low Level Signal Processing The OP-237 offers DC specifications identical to the = Low Noise Audio Amplifiers OP-227 and is decompensated for higher speed operation New ® Strain Gauge Amplifiers at inverting gains greater than 5. SS Precision Amplifier Drives 3000 Load to + 10V Matching Characteristic; with 0.05% Accuracy Drift of Offset Voltage Match of Representative Units 20k oc ese Ty % PNT z eH ARE eee >» 3 1 Deer NS are ON 3 ot ear AN ee eer] . ee 2 | CEL Ee re Hern] yan 6 | ve 3 eo LO ANE = | 6 07227 > onnuxe Nee Al . soo tN 4 308 woo TT TTT Nowzzre| ees Fall a CG el a weut = “7% =-% 5 45 8 125 165 TEMPERATURE (°C) w 7 @ Abies 1

a ABSOLUTE MAXIMUM RATINGS PACKAGE/ORDER INFORMATION : cwref}— Faw) |OP-227CJ OP-237CJ Operating Temperature 8) OP-227E) OP-237E) OP-227A/237A/227C/237C .. —55°C to + 125°C veld awe) OP-227G OP-237GJ P A ibis... ‘ican OP-227EN OP-237EN Lead Temperature Range (Soldering, 10sec.) .. 300°C VePINHERMENC 14 PI PLASTIC OP-227GN OP-237GN NOTE: DEVICE MAY BE OPERATED EVEN IF INSERTION 1S REVERSED; THIS IS DUE TO INHERENT SYMMETRY OF PIN LOCATIONS OF AMPLIFIERS A AND B (NOTE 9). aE eee ELECTRICAL CHARACTERISTICS individual ampitiers Vs = + 15V, Ty=25°C, unless otherwise noted SYMBOL CONDITIONS OP-237A, E 0P-237C, 6 UNITS Vos__| pu otservotage [Woe | - | - #1 | w AVos Long Term Vog Stability (Notes 2, 3) = 0.2 1.0 = 0.2 2.0 u/Mo ATime ww los tnpurotser Curent [PT is nA (Notes 3, 5) en Input Noise Voltage Density | fg = 10Hz (Note 3) - 28 6.0 - 2.8 9.0 nV/VHz ; fo=30Hz (Note 3) = 26 47 - 2.6 59 nv/VHz fy=1000Hz (Note 3) - 25 3.9 25 4.6 nv/VHz iy Input Noise Current Density | fg = 10Hz (Notes 3, 6) = 1.5 4.5 = 1.5 = pA/VHz fo =30Hz (Notes 3, 6) - 1.0 25 - 1.0 - pA/VHz fy = 1000Hz (Notes 3, 6)| — 0.4 0.7 ~ 0.4 0.7 pA/VHz Input Resistance— - 7 - 6a a [input otage Range | SSSSC*d Ot CaO tes TC Ratio PAR | Power Supay Rejecion ato |W=awvwo at | — 1 | - 2 | wv A, =6002,Vo=+10V | 1 12 - 08 12 - Wi R, = 6002 #100 £125 — {+100 2125 — Vv OP-237 | Ayo 5 10 18 - 10 15 - W/ys " fig ee i OP-237 | fp = 10kHz (Note 4) 35 63 - 36 63 - MHz OP-237| f= 1MHz (Avci 2 5) - 40 - = 40 - MHz Zo | Open-Loop Output Resistance |Vo=0, lo=0 ay Py Power Consumption Each Amplifier - 80 140 - 90 170 mw Offset Adjustment Range Rp=10k2. = +4 - - 24 - mv VX SSS jjcjcccjcc—_-

ELECTRICAL CHARACTERISTICS individual ampiitiers Vs = +15V, —25°C <T, <85°C, unless otherwise noted | SYMBOL CONDITIONS OP-2376 UNITS | MIN Tye MAX | wid TYP MAX | Vos __| Input ofsetvotage | (woe) Te | = ao tao] asa] Vos Average Input Offset (Note 7) = 0.2 1.0 #V/°C Bremp | Drift los | put Oneet Curent’ | —‘[e| - 8% [| - 1 | ig | taput Bias Curent | |e | — 2% 260 | - 295 sts | mA input tage Range [|e [ai ais _- [eS ans - | Vv CMAR Common Mode Vom= = 10V 96 118 = 0B Rejection Ratio PSRR Power Supply Vs= 44,5V to + 18V WIV Rejection Ratio = (pe ef = Gain Voor | Opa wtage Seng [REBG [we fany awe = [ano ams — fv ELECTRICAL CHARACTERISTICS incivisut amps Vs= +15V, —55°C <T,=125°C, unless otherwise noted OP-227A OP-227C oy SYMBOL CONDITIONS OP-237A OP-2376 UNITS ane aT wa Vex | tpt Oat vatogs | Wwe id | — oo | — oo | AVos Average Input Offset (Note 7) = 02 1.0 wv/eC Atemp | Drift Tog [ tnput Offset Current [Pe Pos ah ts | WoutBias Curent | -‘[e| - 2% 260 | — 2% 2150 | 1A input Votage Range | |e |as ané - [a2 ane — | Vv CMRR Common Mode Vom = * 10V dB Rejection Ratio | PSRR Power Supply Vs = #4.5V to + 18V w/v | Rejection Ratio Qe cad Gain | Ver | ouavaresving [REaw® fe [ais ws - [ews smo —- |v | The @ denotes the specifications which apply over the full operating Note 6: See test circuit for current noise measurement. | temperature range, Note 7: The input offset drift performance is within the specifications un- For MIL-STD components, please refer to LTC 883C data sheet for test nulled or when nulled with Rp=8k2 to 20k2. listing and parameters. Note 8: The inputs are protected by back-to-back diodes. Current limiting ! Note 1: Input offset voltage measurements are pertormed by automated fesistors are not used in order to achieve low noise. If differential input test equipment approximately 0.5 seconds after application of power. voltage exceeds + 0.7V, the input current should be limited to 25mA. Note 2: Long-Term input Offset Voltage Stability refers to the average Note 9: The V* supply terminals are completely independent and may be trend line of Vog vs Time over extended periods after the first 30 days of powered by separate supplies if desired (this approach, however, would operation. sacrifice the advantages of the power supply rejection ratio matching). The ~~ Note 3: Sample tested. \\V~ supply terminals are both connected to the common substrate and Note 4: Parameter is guaranteed by design. must be tied to the same voltage. Both V~ pins should be used. Note 5: See test circuit and frequency response curve for 0.1Hz to 10Hz tester. 1 ET

MATCHING CHARACTERISTICS See notes on page 3. at Vs = + 15V, Ta=25°C, unless otherwise noted — veg | row Oentvoagewain [i | | Ig Average Non-Inverting Bias - 215 +90 nA Current ist | NonineringOfietOuret | __—SC~dtC | ama] Tos [ ering Ofset Curent [SSS te 20 | ea ACMRR | Common Mode Rejection Vom= #11V 110 123 - 7 WN7 = dB Ratio Match APSRR | Power Supply Rejection - 2 10 “v/v Ratio Match BAVoL fo = 100kHz (Note 4) % Ry = 2kM, Vo= + 10V at Vs= +15V, —55°C <T,=<125°C, unless otherwise noted SYMBOL OP-227A, OP-237A OP-227C, OP-237C units Vos [ Input set Votage mate [fe | = ss tao | 00a | AVos Input Offset Voltage Tracking | (Note 7) BV/°C ATemp

13 Average Non-Inverting Bias - +20 +60 - +35 +170 nA

TYPICAL PERFORMANCE CHARACTERISTICS 0.01Hz to 1Hz Peak-to-Peak Voltage Noise vs Frequency 0.1Hz to 10Hz Noise Noise 100 oo ge Seiceseeiie meas ESRB eee BEER eee Fd eee LTT TTT TTT Ty LT TTT TTT yy 2 oH i = (TT Titi yy Ss rT [TTT TTT 4 eC TTT § oe § Ge 2 \\ : CT ee Te tel da lien = iellenitilMa TRA ee ieemee marth seat 8

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@ — | wicoanén anelll Tt CECE ELe CLEEELEELL CLM TM TTT COCCCeeeey COCCerrr rey or 10 10 100 1000 0 2 4 6 8 0 0 a 0 ao a” 100 FREQUENCY (Hz) TIME (SECONDS) TIME (SECONDS) Total Noise vs Source Wideband Voltage Noise Current Noise vs Frequency Resistance (0.1Hz to Frequency Indicated) Ea Re Ee © =F HHH 2 EET ad =, ECE SCO CM TTT oo LES, TTT TT CT = eo PEs 2 ee So ESS aS SHR ans Maas Sets atti Od TT Sal Ail 2° Crit -T § ESS = Stitt 5 & Se ce Ecc CC oo LUM TUT TTT = ection 100 s ae a us toned debiaiieta tee a a pierre Fis : 0.02Hz to 10Hz RMS Noise. Voltage Noise vs Supply Gain =50,000 (Measured on Voltage Noise vs Temperature Voltage HP3582 Spectrum Analyzer) ‘term [DTT] _ ‘fee TT > ee > ee ues app a) a Da Ea | De er 5 et EECCer cee goer) e LT TTT TT) gt tT tT et SoS aaa ECE EE PSS g g so aa Sl a ll a i a rer 0-2 0 2% 0 7 100 12 0 #5 £10 415 220 425 IQAV/SHE 9 og. TEMPERATURE (°C) ‘SUPPLY VOLTAGE (\\) 50,000 or a LT WAR 5

ee] TYPICAL PERFORMANCE CHARACTERISTICS ) Voltage Gain vs Frequency Voltage Gain vs Supply Voltage Voltage Gain, Ri =2k and 6002 ve Pt TT TT ateene Sw Raa] ek H Bed | SES CET Pe | e@((PNNCTTTT] =, 14 ze = zl as AN "| 7] js a8 Pon CONN ee a ae 2 SX 3 8 Soo NS 7) a-tt TTT NAT os LA 3 He Nl Lo -20 LTT TT TTT tN 0 -1§ -10 -5 0 5 0 0.010.1 1 10 100 1k 10k 100k 1M 10M 100M 0 +5 410 215 £20425 OUTPUT VOLTAGE (V) FREQUENCY (Hz) ‘SUPPLY VOLTAGE (V) MEASURED ON TEKTRONIX 178 LINEAR IC TESTER. Voltage Gain vs Load Resistance Voltage Gain vs Temperature Warm-Up Drift 2s 0 eT “Ee EF TT Sa UN nies TT sg, SLT ACs ee 3 rt | tf] a s/t Te 6S. ee AY og ws gs CTT TT og er Pt 5 ) |4+++— Foe AE eee IS Be) er]

8 LUA TM og EP TP POA iT] tL

e | IZUMI 5 [vs= 2150 i © TAT Tn vara sreranec| | | ® Vi [tid SLO, on Trl, oO. 03 10 3.0 10.0 8 -2 0 Bo D 7% 00 125 0 1 2 3 4 3 LOAD RESISTANCE (kf) TEMPERATURE (°C) TIME AFTER POWER ON (MINUTES) Offset Voltage Drift with Long Term Stability of Four Temperature of Representative Supply Current vs Supply Representative Units Units Voltage 10 by 4 rT TTT ‘Cy Ty T_4 st ELL | see = TTT: n_ | tte tt | =: = eT i => a NOT) esse § See Se eer — = CPR) ZHePRSG EE ae es *g a i 1 [| [4 o 2 4 6 8 0 0 -2% 0 2% 8 7% WO 1% 0 +5 #10 =i 20 Y ‘TIME (MONTHS) TEMPERATURE (°C) ‘SUPPLY VOLTAGE (¥) eee

TYPICAL PERFORMANCE CHARACTERISTICS Common Made Rejection vs Common Mode Limit vs Input Bias Current Over the Frequency Temperature Common Mode Range

140 T 20

LU] | | [J J Tt TT Ty an | me [| «I oevice wnt Positive |_| reo LES A >-2 Jahn sorrd van | | INPUT CURRENT L- | NUTT) S82 RBS PEE 0 LUIS I gC LttTirt yy) s.r va Nw Eee fee NII 8 c HS SS ee coe ” NS a pn tockere [TTT 103 10¢ 105 106 107 = -2 0 2% SO 75 100 125 -% -100 -5 0 5 0 $s FREQUENCY (Hz) TEMPERATURE (°C) COMMON MODE INPUT VOLTAGE (Vv) Input Bias Current vs Input Offset Current vs Output Swing vs Load Temperature Temperature Resistance TT] ES {Fer Py _ 9 PY an tT TTT om NTT TTT eT fii Li) eA zal 3° PEELE = Vy II SUNUUT g ey Sati = 5 Ss 2 orth F.LNITTTT ¢. SS ee ie | STATE SSEEReeEH A ETT) SEPP SE -%-2% 0 % SW 75 100 125 150 -75 -30 -25 0 2 WD 75 100 125 0 1k Kia 10k TEMPERATURE (°C) TEMPERATURE (°C) LOAD RESISTANCE (2) Output Short Circuit Current vs PSRR vs Frequency Closed Loop Output Impedance Time 10 100 ET ery TT TT TY ew | tS or eC ececeeee) | oe! Leet) og SR 2 oR a Y Es et Loe

2 LN PTT] S| ow VA0AS A ed es

| 3 100 . 3 [ovate Cm A a? anim 5 aN iil] é (A ue a s jt TT Tt tT RNG ee Z| over | z(t] TT Tt He im ze“? “FY ed & \\ a ‘SUPPLY NU || oor iy 52 -» <a + + Pri) N TA =.= -—— om (LLELOIN 1 =, !| eet it 1 1 10 102 103 104 105 106 107 108 10 100 tk 10k = 100k iN 0 1 2 3 FREQUENCY (Hz) FREQUENCY (Hz) TIME FROM OUTPUT SHORT TO GROUND (MINUTES) —_—

in, Gain TYPICAL PERFO Signal Response Fa ae EEEEH 3 Signal Transient OP-237 Large Sig PR "e OP-237 Small Sig i 3 RS og Response 7 is 3 [SS Wed [ |e be 3 oS lo 08 = ‘s 7 an a : saiv w - | fo tt tT 3 * — = 4 15V a arn * urea) a ——— — im Undistorted Output | = ul hoxn 494 No 2161 shift vs 1 | in, Phase 11 Cc oo Tra cmsnenen NG a TAAL a PENH se = ne ed HA ee" ANGE fee CT ih ail “a Te Nt mee TIT TIN i ye AE mee Ket 22°C il Ul ° NZ “0 5" Nn wh Hed CIN HHAWOtt eee Co ST I a I i Nn wd SEE NUK mo Ul i ¥s ne m0 HH Hee ARNE ss : Cea amen > Co van’ cari ain " ECM TUS ei Bandwdth Produc, Siew CET “it payee Liese] 3 { RROUENCY ( I] = : ) jent OP-227 Large Signal Response g* ==Scned OU

7 Small Signal Trans| REE 5

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Response : rasHeto| o ie —- EERE ~ * Sura (ee 1. Vgm ae 15V a se Aves 1. me rer +1. Vg= 2 18V 7 @ Abie, ear tet ae

The 0.1Hz to 10Hz peak-to-peak noise of the OP-227/ A noise-voltage density test is recommended when OP-237 is measured in the test circuit shown. The fre- measuring noise ona large number of units. A 10Hz noise quency response of this noise tester indicates that the voltage density measurement will correlate well with a 0.1Hz corner is defined by only one zero. Thetesttime to 0. 1Hz to 10Hz peak-to-peak noise reading since both re- measure 0.1Hz to 10Hz noise should not exceed 10 sec- _ sults are determined by the white noise and the location of onds, as this time limit acts as an additional zero to —_ the 1/f corner frequency. tent Re eomtributons: fromthe srequency ‘band Current noise is measured in the circuit shown and calcu- —_ lated by the following formula: Measuring the typical 60nV peak-to-peak noise per- [e2no —(130nV)2]* formance of the OP-227/0P-237 requires special test in= eno —(130nVyF] precautions: 1MQ x 100 (a) The device should be warmed up for at least five ee minutes. As the op amp warms up, its offset voltage 1008 Lim tN | changes typically 3uV due to its chip temperature in- 1 " creasing 10°C to 20°C from the moment the power . $00 "= supplies are turned on. In the 10 second measure- + ment interval these temperature-induced effects can am easily exceed tens of nanovolts. The OP-227/0P-237 achieves its low noise, in part, by ini A . operating the input stage at 120A versus the typical (b) For similar reasons, the device must be well shielded 40,A of most other op amps. Voltage noise is inversely from air currents to eliminate the possibility of foal Whi t noise is directi rtional t thermoelectric effects in excess of a few nanovolts, P’OPOrtional, while current noise is directly proportional to which would invalidate the measurements. the square root of the stage current. Therefore, the OP-227/ OP-237 current noise will be relatively high. At low frequen- (c) Sudden motion in the vicinity of the device can also _ cies, the low 1/f current noise corner frequency ( + 120Hz) “feed through’’ to increase the observed noise. minimizes current noise to some extent. 0.1Hz to 10Hz Noise Test Circuit 0.1Hz to 10Hz p-p Noise ou Tester Frequency Response 100 i . DP atiniiiNen | Lima HEN LN | aa ew LM CTT * = ite tte Fo MUM TTT TN [ie = poe ae oom eee | | | = = 50,000 Tr \\ = I oT TIM RUMEN, ae ‘oa mak | OM Py CETTE CE UE TIN (7 Now-POLARIZED CAPACITORS ONLY. = oor vena - ® baad Oe ene

APPLICATIONS INFORMATION w | In most practical applications, however, current noise (ii) 400Q<Rs <50kQat1kHz Resistor noise will not limit system performance. This is illustrated in the 4002<Rs <8kQ at 10Hz dominates total noise versus source resistance plot, where total (iii) Rs >50k@at 1kHz Current noise noise = [(voltage, noise)* + (current noise x Rs)* + Rg >8kQ at 10Hz dominates —" Clearly the OP-227 / OP-237 should not be used in region Three regions can be identified as a function of source (jj), where total system noise is at least six times higher resistance: than the voltage noise of the op amp, i.e. the low voltage (i) Rs <4009-Voltage noise dominates noise specification is completely wasted. LL APPLICATIONS INFORMATION OP AMP MATCHING Advantages of Matched Dual Op Amps In many applications the performance of a system de- _Clearly, the OP-227/0P-237, by specifying and guaran- pends on the matching between two operational ampli- _ teeing all of these matching parameters, can significantly fiers rather than the individual characteristics of the two —_ improve the performance of matching dependent circuits. op amps. Two or three op amp instrumentation amplifiers, tracking voltage references and low drift active filters are Three Op Amp Instrumentation Amplifier some of the circuits requiring matching between two op a % amps. i * i The well-known triple op amp configuration illustrates Ll these concepts. Output offset is a function of the dif- ia ed ference between the offsets of the two halves of the 8 OP-227/0P-237. This error cancellation principle holds in =| > sour for a considerable number of input referred parameters in 8 addition to offset voltage and its drift with temperature. ™ 1 Input bias current will be the average of the two non- n ag a EAN 108 inverting input currents (Ig *). The difference between wy i‘ these two currents (los * ) is the offset current of the in- Ww = strumentation amplifier. The difference between the in- * ond 97% verting input currents (los~ ) will cause errors flowing - through R1, R2, and R3. Common mode and power sup- 2000 ply rejections will be dependent only on the match be- anal a two amplifiers (assuming perfect resistor Trim R8 for gain Trim R9 for DC common mode rejection The concepts of common mode and power supply rejec- Trim R10 for AC common mode rejection tion ratio match (ACMRR and APSRR) are best demon- . _ strated with a numerical example: Typical performance of the instrumentation amplifier: Assume CMRRa = + 1.0uV/V or 1200B, Input offset voltage =60.V and CMRRp = +0.75pV/V or 122.5dB, Input bias current = + 15nA then ACMRR =0.25nV/V or 132dB; Input offset current = + 20nA Ww if CMRRg = —0.75uV/V which is still 122.50B, Input noise =0.08.Vp-p then ACMRR=1.75nV/V or 115dB. Power bandwidth (Vo = + 10V) =250kHz ee

Two Op Amp Instrumentation Amplifier Dual Limit Microvolt Comparator RS ne +15v 220at 10k at 3% 0k" runny = UPPER 3) UMIT ay x or7 > cAI : _ oa) wats ie + ‘3650 = “TRIM FOR COMMON MODE REJECTION nr Uy ‘TRIM FOR GAIN cunt ft (82.483) , 82203) 99 eh 8 f z %) S | bing ee Me CASTIB. LOWER __tt ci UMIT Strain Gauge Signal Conditioner with Bridge Excitation +15¥. parg bs M329 3 4.90K", | REFERENCE OUT

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.o¥ T0 10v OUT rr soe vk 1 10 " a . - - om *RNGOC FILM RESISTORS -v CE ee Intormation furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corpora A y LINEAR tion makes no representation that the interconnection of its circuits as described herein 1 1 ‘will not infringe on existing patent rights,

2) 48) ri mute 0 0 Bi Pry | l , ° 2 NON-INVERTING a CJ 316 sees) Puy), met 228 hy a rp , WNPUT (—) s. 4 “ [| ii Ct-= 120pF FOR OP227 pe C1 = tSpF FOR OP237 {J} 12(5) ren ee PACKAGE DESCRIPTION dimensions in inches (millimeters) unless otherwise noted. ww mea 14-Lead Cavity DIP (J) “ “~ ian z Stee i + P| irom 0028 fl wae 35) Geteres ore) | aes | sooecrw 14-Lead Molded DIP (N) eet rrmansne} eo am or] aus in “| “ i .= ome owoeo a ee PEN “fn 20m 50.015 —e||_seweoc0s oe /O Ee oT

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Product Information

OP227EN specifications and overview.

Summary

Dual Matched Low Noise Precision Op Amp and Dual High Speed Low Noise Prescision Op Amp

Description

Dual Matched Low Noise Precision Op Amp and Dual High Speed Low Noise Prescision Op Amp

Source title OP227EN Datasheet(PDF) - Linear Technology

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