OP227

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REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. a OP227 Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002 Dual, Low Noise, Low Offset Instrumentation Operational Amplifier PIN CONNECTIONS NOTE DEVICE MAY BE OPERATED EVEN IF INSERTION IS REVERSED; THIS IS DUE TO INHERENT SYMMETRY OF PIN LOCATIONS OF AMPLIFIERS A AND B V–(A) AND V–(B) ARE INTERNALLY CONNECTED VIA SUBSTRATE RESISTANCE NULL (A) NULL (A) –IN (A) +IN (A) V– (B) OUT (B) V+ (B)

1 V+ (A)

OUT (A) V– (A) +IN (B) –IN (B) NULL (B) NULL (B) A B

FEATURES

Excellent Individual Amplifier Parameters Low V OS, 80 /H9262V Max Offset Voltage Match, 80 /H9262V Max Offset Voltage Match vs. Temperature, 1 /H9262V//H11543C Max Stable V OS vs. Time, 1 /H9262V/MO Max Low Voltage Noise, 3.9 nV/ ÷Hz Max Fast, 2.8 V/ /H9262s Typ High Gain, 1.8 Million Typ High Channel Separation, 154 dB Typ GENERAL DESCRIPTION The OP227 is the first dual amplifier to offer a combination of low offset, low noise, high speed, and guaranteed amplifier matching characteristics in one device. The OP227, with a V OS match of 25 mV typical, a TCV OS match of 0.3 mV/∞C typical and a 1/f corner of only 2.7 Hz is an excellent choice for precision low noise designs. These dc characteristics, coupled with a slew rate of 2.8 V/ms typical and a small-signal bandwidth of 8 MHz typical, allow the designer to achieve ac performance previously unattainable with op amp based instrumentation designs. When used in a three op amp instrumentation configuration, the OP227 can achieve a CMRR in excess of 100 dB at 10 kHz. In addition, this device has an open-loop gain of 1.5 M typical with a 1 kW load. The OP227 also features an I B of ± 10 nA typical, an IOS of 7 nA typical, and guaranteed matching of input currents SIMPLIFIED SCHEMATIC NON INVERTING INPUT (+) INVERTING INPUT (–) Q3 Q1A Q1B Q2B Q2A NULL R2* *R1 AND R2 ARE PREMATURELY ADJUSTED AT WAFER TEST FOR MINIMUM OFFSET VOLTAGE. Q21 Q11 Q12 Q27 Q23 Q24 R23 R24 Q28 C3 R11 C4 R12 Q22 Q20 Q19 Q26 Q45 Q46 OUTPUT between amplifiers. These outstanding input current specifications are realized through the use of a unique input current cancellation circuit which typically holds I B and IOS to ± 20 nA and 15 nA respectively over the full military temperature range. Other sources of input referred errors, such as PSRR and CMRR, are reduced by factors in excess of 120 dB for the individual amplifiers. DC stability is assured by a long-term drift application of 1.0 mV/month. Matching between channels is provided on all critical param- eters including offset voltage, tracking of offset voltage versus temperature, noninverting bias current, CMRR, and power supply rejection ratio. This unique dual amplifier allows the elimination of external components for offset nulling and frequency compensation.

REV. A–2– OP227–SPECIFICATIONS Individual Amplifier Characteristics (VS = /H1155015 V, TA = 25/H11543C, unless otherwise noted.) OP227E OP227G Parameter Symbol Conditions Min Typ Max Min Typ Max Unit INPUT OFFSET VOLTAGE V OS Note 1 20 80 60 180 mV LONG-TERM VOS STABILITY V OS/Time Notes 2,4 0.2 1.0 0.4 2.0 mV/MO INPUT OFFSET CURRENT I OS 73 5 1 2 7 5 n A INPUT BIAS CURRENT I B ± 10 ± 40 ± 15 ± 80 nA Notes 3,5 INPUT NOISE VOLTAGE DENSITY e n fO = 10 Hz3 3.5 6.0 3.8 9.0 nV/ /H20906Hz fO = 30 Hz3 3.1 4.7 3.3 5.9 nV/ /H20906Hz fO = 1000 Hz3 3.0 3.9 3.2 4.6 nV/ /H20906Hz INPUT NOISE DENSITY i n fO = 10 Hz3, 6 1.7 4.5 1.7 pA/ /H20906Hz fO = 30 Hz3, 6 1.0 2.5 1.0 pA/ /H20906Hz fO = 1000 Hz3, 6 0.4 0.7 0.4 0.7 pA/ /H20906Hz INPUT RESISTANCE Differential Mode R IN Note 7 1.3 6 0.7 4 M W Common Mode R INCM 32 G W INPUT VOLTAGE RANGE IVR ± 11.0 ± 12.3 ± 11.0 ± 12.3 V COMMON-MODE REJECTION RATIO CMRR V CM = ± 11 V 114 126 100 120 dB POWER SUPPLY REJECTION RATIO PSRR V S = ± 4 V to ± 18 V 1 10 2 20 mV/V LARGE-SIGNAL VOLTAGE GAIN A VO RL /H11350 2 kW, VO = ± 10 V 1000 1800 700 1500 V/mV RL /H11350 600 kW, VO = ± 10 V 800 1500 600 1500 V/mV OUTPUT VOLTAGE SWING V O RL /H11350 2 kW± 12.0 ± 13.8 ± 11.5 ± 13.5 V RL /H11350 600 W± 10.0 ± 11.5 ± 10.0 ± 11.5 V SLEW RATE SR R L /H11350 2 kW4 1.7 2.8 1.7 2.8 V/ ms GAIN BANDWIDTH PROD. GBW Note 4 5 8 5 8 MHz OPEN-LOOP OUTPUT RESISTANCE R O VO = 0, IO = 0 70 70 W POWER CONSUMPTION P d Each Amplifier 90 140 100 170 mW OFFSET ADJUSTMENT RANGE R p = 10 kW± 4 ± 4m V NOTES 1Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of powe r. E Grade specifications are guaranteed fully warmed up. 2Long term input offset voltage stability refers to the average trend line of V OS vs. time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in V OS during the first 30 days are typically 2.5 mV. Refer to the Typical Performance Curve. 3Sample tested. 4Parameter is guaranteed by design. 5See test circuit and frequency response curve for 0.1 Hz to 10 Hz tester. 6See test circuit for current noise measurement. 7Guaranteed by input bias current. Specifications subject to change without notice.

REV. A –3– OP227 SPECIFICATIONS Individual Amplifier Characteristics (VS = /H1155015 V, –25 /H11543C £ TA £ +85/H11543C, unless otherwise noted.) OP227E OP227G Parameter Symbol Conditions Min Typ Max Min Typ Max Unit INPUT OFFSET VOLTAGE V OS Note 1 40 140 85 280 mV AVERAGE INPUT OFFSET DRIFT TCV OS TCVOSn Note 2 0.5 1.0 0.5 1.8 mV//H11543C INPUT OFFSET CURRENT I OS 10 50 20 135 nA INPUT BIAS CURRENT I B ± 14 ± 60 ± 25 ± 150 nA INPUT VOLTAGE RANGE IVR ± 10 ± 11.8 ± 10 ± 11.8 V COMMON-MODE REJECTION RATIO CMRR V CM = ± 10 V 110 124 96 118 dB POWER SUPPLY REJECTION RATIO PSRR V S = ± 4.5 V to ± 18 V 2 15 2 32 mV/V LARGE-SIGNAL VOLTAGE GAIN A VO RL /H11350 2 kW, VO = ± 10 V 750 1500 450 1000 V/mV OUTPUT VOLTAGE SWING V O RL /H11350 2 kW± 11.7 ± 13.6 ± 11.0 ± 13.3 V Matching Characteristics (VS = ±15 V, TA = 25/H11543C, unless otherwise noted.) OP227E OP227G Parameter Symbol Conditions Min Typ Max Min Typ Max Unit INPUT OFFSET VOLTAGE MATCH /H9004VOS 25 80 55 300 mV AVERAGE NONINVERTING Bias CURRENT I I II B BA BB+= ++ + ± 10 ± 40 ± 15 ± 90 nA NONINVERTING OFFSET CURRENT I OS+I OS+ = IB+A-IB+B ± 12 ± 60 ± 20 ± 130 nA INVERTING OFFSET CURRENT I OS-I OS- = IB-A-IB-B ± 12 ± 60 ± 20 ± 130 nA COMMON-MODE REJECTION RATIO MATCH /H9004CMRR V CM = ± 11 V 110 123 97 117 dB POWER SUPPLY REJECTION RATIO MATCH /H9004PSRR V S = ± 4 V to ± 18 V 2 10 2 20 mV/V CHANNEL SEPARATION CS Note 1 126 154 126 154 dB NOTES 1Input Offset Voltage measurements are performed by automated equipment approximately 0.5 seconds after application of power. 2The TCVOS performance is within the specifications unnulled or when nulled with R P = 8 kW to 20 kW, optimum performance is obtained with R P = 8 kW. 3Sample tested. Specifications subject to change without notice.

REV. A–4– OP227–SPECIFICATIONS Matching Characteristics (VS = /H1155015 V, TA = -25/H11543C to +85/H11543C, unless otherwise noted.) OP227E OP227G Parameter Symbol Conditions Min Typ Max Min Typ Max Unit INPUT OFFSET VOLTAGE MATCH /H9004VOS 40 140 90 400 mV INPUT OFFSET TRACKING TC /H9004V OS Nulled or Unnulled* 0.3 1.0 0.5 1.8 mV//H11543C AVERAGE NONINVERTING BIAS CURRENT I I II B BA BB+= ++ + ± 14 ± 60 ± 25 ± 170 nA AVERAGE DRIFT OF NONINVERTING BIAS CURRENT TCI B+8 0 180 pA/ /H11543C NONINVERTING OFFSET CURRENT I OS+I OS+ = IB+A–IB+B ± 20 ± 90 ± 35 ± 250 nA AVERAGE DRIFT OF NONINVERTING OFFSET CURRENT TCI OS+ 130 250 pA/ /H11543C INVERTING OFFSET CURRENT I COMMON-MODE REJECTION RATIO MATCH /H9004CMRR V CM = ± 10 V 106 120 90 112 dB POWER SUPPLY REJECTION RATIO MATCH /H9004PSRR V S = ± 4.5 V to ± 18 V 2 15 3 32 mV/V NOTES *Sample tested. Specifications subject to change without notice.

REV. A OP227 –5– ABSOLUTE MAXIMUM RATINGS Operating Temperature Range NOTES 1For supply voltages less than ± 22 V, the absolute maximum input voltage is equal to the supply voltage. 2The OP227 inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds ± 0.7 V, the input current should be limited to 25 mA. 3/H9258JA is specified for worst-case mounting conditions, i.e., /H9258JA is specified for device in socket for CERDIP package. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP227 features propriety ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefor, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE ORDERING GUIDE TA = 25/H11543CH ermetic Operating VOS MAX (/H9262V) DIP 14-Lead Temperature Range

80 OP227EY IND

180 OP227GY IND

/H9258JA 3 = 106∞C/W /H9258JC = 16∞C/W For military processed devices, please refer to the Standard Microcircuit Drawing (SMD) available at SMD Part Number ADI Equivalent 5962-8688701CA* OP227AYMDA *Not recommended for new design, obsolete April 2002.

REV. A OP227 –6– FREQUENCY – Hz VOLTAGE NOISE DENSITY – nV/ Hz 1 1 10 100 1k TA = 25/H11543C l/f CORNER = 2.7Hz VS = /H1155015V TPC 3. Voltage Noise Density vs. Frequency SOURCE RESIST ANCE – /H9024 TOTAL NOISE – nV/ Hz 100 100 1k 10k RESISTOR NOISE ONL Y TA = 25/H11543C VS = /H1155015V AT 10Hz AT 1kHZ RS = 2R1 TPC 6. Total Noise vs. Source Resistance FREQUENCY – Hz VOLTAG E NOISE – nV/ Hz 100 10 100 1k 741 l/f CORNER LOW NOISE AUDIO OP AMP l/f CORNER OP227 l/f CORNER 2.7 Hz INSTRUMENT A TION RANGE, TO DC AUDIO RANGE TO 20 kHz TPC 4. Comparison of Op Amp Voltage Noise Spectra TEMPERA TURE – /H11543C VOLTAGE NOISE DENSITY – nV/ Hz –50 –25 0 25 50 75 100 125 AT 10Hz AT 1kHz VS = /H1155015V TPC 7. Voltage Noise Density vs. Temperature BANDWIDTH – Hz rms VOL T AGE NOISE – /H9262V 100 0.1 0.01 1k 10k 100k TA = 25/H11543C VS = /H1155015V TPC 5. Input Wideband Noise vs. Band- width (0.1 Hz to Frequency Indicated) FREQUENCY – Hz CURRENT NOISE – pA/ Hz 10.0 1.0 0.1 100 1k 10k l/f CORNER = 140Hz TPC 8. Current Noise Density vs. Frequency 100

1 SEC / DIV

0.1Hz TO 10Hz PEAK-TO-PEAK NOISE/X20 120 –40 –80 –120VOLTAG E NOISE – nV TPC 2. Low Frequency Noise (Observation Must Be Limited to 10 Seconds to Ensure 0.1 Hz Cutoff) 10/H9024 0.1/H9262F 100k/H9024 D.U.T. VOLTAGE GAIN = 50,000 2k/H9024 5/H9262F OP12 24.3k/H9024 0.1/H9262F 100k/H9024 4.3k/H9024 2.35/H9262F 23.5/H9262F SCOPE X 1 RIN = 1M/H9024 110k/H9024 BACK-TO-BACK 10/H9262F BACK-TO-BACK 4.7/H9262F BACK-TO-BACK 47/H9262F TPC 1. Voltage Noise Test Circuit (0.1 Hz to 10 Hz p-p) –Typical Performance Characteristics

REV. A –7– OP227 TOTAL SUPPL Y VOL T AGE – V SUPPL Y CURRENT – mA (BOTH AMPLIFIERS ON) 10 15 20 25 30 35 40 45 TA = +25/H11543C TA = +125/H11543C TA = –55/H11543C TPC 9. Supply Current vs. Supply Voltage TIME AFTER POWER ON – MINUTES CHANGE IN INPUT OFFSET VOL T AGE – /H9262V 01 5 234 TA = 25/H11543C VS = /H1155015V OP227G TPC 12. Warm-Up Drift TEMPERA TURE – /H11543C INPUT OFFSET CURRENT – nA –75 –50 –25 0 25 50 75 100 125 VS = /H1155015V TPC 15. Input Offset Current vs. Temperature TEMPERA TURE – /H11543C OFFSET VOL T AGE – /H9262V 120 –75–55–35–15 5 25 45 65 85 105125145165 100 –20 –40 –60 –80 –100 TPC 10. Offset Voltage Drift of Representative Units TIME – Sec ABSOLUTE CHANGE IN INPUT OFFSET VOLTAG E – /H9262V –20 02 0 4 0 6 08 0 100 THERMAL SHOCK RESPONSE BAND DEVICE IMMERSED IN 70/H11543 C OIL BA TH VS = /H1155015V TA = 25/H11543C TA = 70/H11543C TPC 13. Offset Voltage Change Due to Thermal Shock FREQUENCY – Hz OPEN-LOOP GAIN – dB 130 110 –10 10 100 1k 10k 100k 1M 10M 100M TPC 16. Open-Loop Gain vs. Frequency TIME – MONTHS OFFSET VOL T AGE DRIFT WITH TIME – /H9262V 0 23456789 1 0 11 1 1 2 0.2/H9262V/MO. 0.2/H9262V/MO. 0.2/H9262V/MO. TPC 11. Offset Voltage Stability with Time TEMPERA TURE – /H11543C INPUT BIAS CURRENT – nA –50 –25 0 25 50 75 100 125 150 VS = /H1155015V TPC 14. Input Bias Current vs. Temperature TEMERA TURE – /H11543C SLEW RA TE – V//H9262s PHASE MARGIN – DEG –75 –50 –25 0 25 50 75 100 125 GAINBANDWIDTH PRODUCT – MHz /H9021M GBW SLEW VS = /H1155015V /H11015 TPC 17. Slew Rate, Gain Bandwidth Product, Phase Margin vs. Temperature

REV. A OP227 –8– FREQUENCY – Hz GAIN – dB 10M 100M GAIN PHASE MARGIN = 70/H11543 TA = 25/H11543C VS = /H1155015V PHASE SHIFT – DEG 100 120 140 160 180 200 220 TPC 18. Gain, Phase Shift vs. Frequency FREQUENCY – Hz PEAK-TO-PEAK OUTPUT VOL T AGE – V 10k 100k 1M 10M TA = 25/H11543C VS = /H1155015V TPC 21. Maximum Undistorted Output vs. Frequency 500ns 100 20mV AVCL = +1, CL= 15pF VS = /H1155015V TA = 25/H11543C/X20 +50mV –50mV TPC 24. Small-Signal Transient Response TOTAL SUPPL Y VOL T AGE – V OPEN-LOOP GAIN – V//H9262V 2.5 0 10 20 30 40 50 2.0 1.5 1.0 0.5 0.0 TA = 25/H11543C RL = 2k/H9024 RL = 1k/H9024 TPC 19. Open-Loop Gain vs. Supply Voltage CAP ACITIVE LOAD – pF PERCENT OVERSHOOT 100 500 1000 1500 2000 2500 VS = 615V VIN = 100mV AV = +1 TPC 22. Small-Signal Overshoot vs. Capacitive Load 2/H9262s 100 AVCL = +1 VS = /H1155015V TA = 25/H11543C/X20 +5V –5V TPC 25. Large-Signal Transient Response LOAD RESIST ANCE – /H9024 OUTPUT SWING – V 100 1k 10k POSITIVE SWING NEGA TIVE SWING TS = 25/H11543C VS = /H1155015V TPC 20. Output Swing vs. Resistive Load TIME FROM OUTPUT SHORTED TO GROUND – MINUTES SHORT -CIRCUIT CURRENT – mA 01 5 234 lSC(–) lSC(+) TA = /H1155025/H11543 VS = /H1155015V TPC 23. Short-Circuit Current vs. Time FREQUENCY – Hz /H9004CMMR – dB 140 120 100 60 10k 100k 1M 10M TPC 26. Matching Characteristic CMRR Match vs. Frequency

REV. A –9– OP227 SUPPL Y VOL T AGE – V COMMON-MODE RANGE – V –12 –16 /H115505 /H1155010 /H1155015 /H1155020 TA = –55/H11543C TA = +125/H11543C TA = –55/H11543C TA = +125/H11543C TA = +25/H11543C TA = +25/H11543C TPC 27. Common-Mode Input Range vs. Supply Voltage TEMPERA TURE – /H11543C OFFSET VOL T AGE MA TCH – /H9262V 100 –75 –20 –40 –60 –80 –100 –120 –55–35–15 5 25 45 65 85 105125145165 TPC 30. Matching Characteristic: Drift of Offset Voltage Match of Representative Units TEMPERA TURE – /H11543C /H9004 CMRR – dB 125 –55 120 115 110 105 –35 –15 52 5 4 5 6 58 5 105 125 TPC 33. Matching Characteristic: CMRR Match vs. Temperature LOAD RESIST ANCE – /H9024 OPEN-LOOP VOL T AGE GAIN – V//H9262V 100 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1k 10k 100k TA = 25/H11543C VS = /H1155015V TPC 28. Open-Loop Voltage Gain vs. Load Resistance TEMPERA TURE – /H11543C NONINVERTING BIAS CURRENT – /H11550nA –55 –35 –15 5 25 45 65 85 105 125 TPC 31. Matching Characteristic: Average Noninverting Bias Current vs. Temperature FREQUENCY – Hz CHANNEL SEP ARA TION – dB 180 100 140 120 100 1k 10k 100k 1M 10M TPC 34. Channel Separation vs. Frequency FREQUENCY – Hz PSRR AND /H9004 PSSR – dB 140 120 100 10 100 1k 10k 100k 1M /H9004 PSRR (–) /H9004 PSRR (+) PSRR (+) PSRR (–) TPC 29. PSRR and /H9004PSRR vs. Frequency TEMPERA TURE – /H11543C OFFSET CURRENT – /H11550nA –55 –35 –15 5 25 45 6 58 5 1 0 5 125 TPC 32. Matching Characteristic: Average Offset Current vs. Temper- ature (Inverting or Noninverting)

nominal value of 10 k W for RN is suitable for most applications. maximum value of 1000 and V d is at ± 10 mV. effect is directly proportional to the CMR match of the op amps. until limited by linearity and resistor stability considerations. error at the output due to this effect will be approximately 5 mV. Figure 3. Two Op Amp Instrumentation Amplifier Using the individual op amps minimize errors.

20 log10Ad/ACM, is simply equal to the /H9004CMRR of the OP227. finite gain of the input op amps would be approximately 140 dB. Figure 4. Three Op Amp Instrumentation Amplifier Using

Figure 5. High Speed Precision Rectifier effects of stray capacitance. R1 resistors is critical to gain accuracy. Typical component values are 30 pF for C1 and 2 k W for R3. single package, can be used to improve packaging density.

REV. A OP227 –14– OUTLINE DIMENSIONS 14-Lead Ceramic Dip – Glass Hermetic Seal [CERDIP] (Q-14) Dimensions shown in inches and (millimeters) 0.310 (7.87) 0.220 (5.59) PIN 1 0.005 (0.13) MIN 0.098 (2.49) MAX 0.100 (2.54) BSC 0.320 (8.13) 0.290 (7.37) 0.015 (0.38) 0.008 (0.20) SEATING PLANE 0.200 (5.08) MAX 0.785 (19.94) MAX 0.150 (3.81) MIN 0.200 (5.08) 0.125 (3.18) 0.023 (0.58) 0.014 (0.36) 0.070 (1.78) 0.030 (0.76) 0.060 (1.52) 0.015 (0.38) CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETERS DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN

REV. A OP227 –15–

Revision History

10/02—Data Sheet changed from REV. 0 to REV. A.

–16– C02685–0–10/02(A) PRINTED IN U.S.A.