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Infrared Light Emitting Diode OP205CL © TT electronics plc Issue B 07/2016 Page 1 OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Description: The OP205CL is a high efficiency GaAIAs infrared LED mounted in a TO-46 metal can package. The device features a special dome lens that allows a very narrow beam angle. The result is a near parallel beam that is useful in applicaƟons that requires a collimated light source with a uniform intensity paƩern. OP205CL LED is mechanically and spectrally matched to OP800 series phototransistors. Applications:
- Optical encoders
- Triangulation sensors
- Long distance sensing Features:
- High power GaAIAs
- Narrow beam angle—near parallel beam
- 875 nm wavelength
- TO-46 package
- Wide operating temperature range RoHS
Ordering Information
OP205CL 875 nm 10° 34mm 0mm Pinhole L=2-5mm D -3.0 -2.4 0 40% 60% 80% 100% 120% Relative Radiant Intensity Linear Displacement—D (mm) Relative Radiant Intensity vs. Linear Displacement 20% L = 2mm L = 3mm L = 5mm
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Infrared Light Emitting Diode OP205CL Issue B 07/2016 Page 2 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Storage Temperature Range -40° C to +125° C Operating Temperature Range -40° C to +100° C Lead Soldering Temperature 260° C(1) Reverse Voltage 3.0 V Continuous Forward Current 50 mA Power Dissipation 160 mW(2) Electrical Specifications Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS PO Radiant Intensity 8.5 12.0 - mW I F = 50mA(3) VF Forward Voltage - - 2.0 V I F = 50mA IR Reverse Current - - 10 μA V R = 3.0V λP Peak Emission Wavelength - 875 - nm I F = 20mA ΘHP Total Emission Angle at Half Power Points - 6 10 Deg. I F = 20mA Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. De-rate linearly at 2.17 mW/° C above 25° C. 3. Total Optical Power (P O) is measured by OPTEK Technology equipment. 100°C -40°C Relative Radiant Intensity vs. Forward Current vs. Temperature 0 10 20 30 40 50 Forward Current (mA) Relative Radiant Intensity 100% 150% 200% 250% 300% 350% Normalized at IF = 20mA, TA = 20°C. Temperatures stepped in 20°C Increments 50% 0% 1.1 1.2 1.3 1.4 1.5 1.6 Forward Voltage (V) Forward Voltage vs. Forward Current vs. Temperature 0 10 20 30 40 50 Forward Current (mA) -40°C 100°C Temperatures stepped in 20°C Increments