OP200EZ

OP200 AD | Alldatasheet

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REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. a OP200 Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002 Dual Low Offset, Low Power Operational Amplifier GENERAL DESCRIPTION The OP200 is the first monolithic dual operational amplifier to offer OP77 type precision performance. Available in the industry standard 8-pin pinout, the OP200 combines precision performance with the space and cost savings offered by a dual amplifier. The OP200 features an extremely low input offset voltage of less than 75 mV with a drift below 0.5 mV/∞C, guaranteed over the full military temperature range. Open-loop gain of the OP200 exceeds 5,000,000 into a 10 k W load; input bias current is under 2 nA; CMR is over 120 dB and PSRR below 1.8 mV/V. On-chip zener- zap trimming is used to achieve the extremely low input offset voltage of the OP200 and eliminates the need for offset pulling. Power consumption of the OP200 is very low, with each amplifier drawing less than 725 mA of supply current. The total current drawn by the dual OP200 is less than one-half that of a single OP07, yet the OP200 offers significant improvements over this industry standard op amp. The voltage noise density of the OP200, 11 nV/÷Hz at 1 kHz, is half that of most competitive devices. The OP200 is pin compatible with the OP221, LM158, MC1458/1558, and LT1013. PIN CONNECTIONS 16-Pin SOIC (S-Suffix) NC = NO CONNECT –IN A +IN A NC NC +IN B –IN B NC OUT A NC NC NC NC OUT B NC EPOXY MINI-DIP (P-Suffix), 8-Pin Hermetic DIP (Z-Suffix) –IN B +IN B OUT B –IN A +IN A OUT A + – A B

FEATURES

Low Input Offset Voltage: 75 /H9262V Max Low Offset Voltage Drift, Over –55 /H11543C < TA < +125/H11543C: 0.5 /H9262V//H11543C Max Low Supply Current (Per Amplifier): 725 mA Max High Open-Loop Gain: 5000 V/mV Min Low Input Bias Current: 2 nA Max Low Noise Voltage Density: 11 nV/ ÷Hz at 1 kHz Stable with Large Capacitive Loads: 10 nF Typ Pin Compatible to OP221, MC1458, and LT1013 with Improved Performance Available in Die Form +IN –IN OUT BIAS VOLTAGE LIMITING NETWORK Figure 1. Simplified Schematic (One of two amplifiers is shown.) precision op amps and where low power consumption is critical. For a quad precision op amp, see the OP400.

REV. A–2– OP200–SPECIFICATIONS (VS = ±15 V, TA = 25/H11543C, unless otherwise noted.)ELECTRICAL CHARACTERISTICS OP200A/E OP200F OP200G Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Unit Input Offset Voltage V OS 25 75 50 150 80 200 mV Long Term Input Voltage Stability 0.1 0.1 0.1 mV/mo Input Noise Voltage e n p-p 0.1 Hz to 10 Hz 0.5 0.5 0.5 mVp-p Input Noise e n fO = 10 Hz 22 36 22 36 22 nV/ /H20906Hz Voltage Density1 fO = 1000 Hz 11 18 11 18 11 Input Noise Current i n p-p 0.1 Hz to 10 Hz 15 15 15 pA p-p Input Noise Current Density i n fO = 10 Hz 0.4 0.4 0.4 pA/ /H20906Hz Input Resistance Differential Mode R IN 10 10 10 M W Input Resistance Common Mode R INCM 125 125 125 G W Large Signal A VO VO - ±10 V Voltage Gain R L = 10 kW 5000 12000 3000 7000 3000 7000 RL = 2 kW 2000 3700 1500 3200 1500 3200 M/mV NOTES 1Sample tested 2Guaranteed but not 100% tested 3Guaranteed by CMR test

REV. A –3– OP200 ELECTRICAL CHARACTERISTICS(VS = 15 V, –55 /H11543C £ TA £ +125/H11543C for OP200A, unless otherwise noted.) OP200A Parameter Symbol Conditions Min Typ Max Unit Input Offset Voltage V OS 45 125 mV Average Input Offset Voltage Drift TCV OS 0.2 0.5 mV/∞C Input Offset Current I OS VCM = 0 V 0.15 2.5 nA Input Bias Current I B VCM = 0 V 0.9 5.0 nA Large Signal Voltage Gain A VO VO = 10 V RL = 10 W 3000 9000 V/mV RL = 2 kW 1000 2700 V/mV Input Voltage Range * IVR ±12 ±12.5 V Common-Mode Rejection CMR V CM = ±12 V 115 130 dB Power Supply Rejection Ratio PSRR V S = +3 V to +18 V 0.2 3.2 mV/V Output Voltage Swing V O RL = 10 kW± 12 ±12.4 V RL = 2 kW± 11 ±12 V Supply Current Per Amplifier I SY No Load 600 775 mA Capacitive Load Stability A V = +1 8 nF NOTE *Guaranteed by CMR test.

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Unit Input Voltage Range3 IVR ±12 ±13 ±12 ±13 ±12 ±13 V Common-Mode Rejection CMR V CM = ±12 V 120 135 115 135 110 130 dB Power Supply V S = ±3 V Output Voltage V O RL= 10 kW± 12 ±12.6 ±12 ±12.6 ±12 ±12.6 V Swing R L = 2 kW± 11 ±12.2 ±11 ±12.2 ±11 ±12.2 V Supply Current Per Amplifier I SY No Load 570 725 570 725 570 725 mA Gain Bandwidth Product GBWP A V = 1 500 500 500 kHz Channel Separation2 VO = 20 Vp-p CS f O = 10 Hz 123 145 123 145 123 145 dB Input Capacitance C IN 3.2 3.2 3.2 pF Capacitive Load A V = 1 Stability No Oscillations 10 10 10 nF NOTES 1Sample tested 2Guaranteed but not 100% tested 3Guaranteed by CMR test (VS = /H1155015 V, TA = 25/H11543C, unless otherwise noted.)

REV. A–4– OP200–SPECIFICATIONS Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Unit Input Offset Voltage V OS 35 100 80 250 110 300 mV Average Input Offset Input Bias Current I B VCM = 0 V 0 3 5.0 0.3 70 0.5 10.0 nA Large-Signal V O = ±10 V Voltage Gain A VO RL= 10 kW 3000 10000 2000 5000 2000 5000 V/mV RL = 2 kW 1500 3200 1000 2500 1000 2500 V/mV Input Voltage Range* IVR ±12 ±12.5 ±12 ±12.5 ±12 ±12.5 V Common-Mode Rejection CMR V CM = ±12 V 115 130 110 130 105 130 dB Rejection Ratio to ±18 V Output Voltage V O RL = 10 kW± 12 ±12.4 ±12 ±12.4 ±12 ±12.4 V Swing R L = 2 kW± 11 ±12 ±11 ±12 ±11 ±12.2 V Supply Current Per Amplifier I SY No Load 600 775 600 775 600 775 mA Capacitive Load A V = 1 10 1 01 0 n F Stability No Oscillations 10 10 10 nF NOTE *Guaranteed by CMR test. (VS = ±15 V, –40 /H11543C £ TA £ +85/H11543C, unless otherwise noted.)

75 OP200AZ MIL

75 OP200EZ XIND

150 OP200FZ * XIND

200 OP200GP XIND

200 OP200GS XIND

*Not for new design, obsolete April 2002. soldered to printed circuit board for SOL package. recommended to avoid performance degradation or loss of functionality. Figure 2. Channel Separation Test Circuit Figure 3. Noise Test Schematic

REV. A OP200 –6– –75 TEMPERATURE – /H11543C INPUT OFFSET VOLTAGE – /H9262V VS = /H1155015V –50 –25 0 25 50 75 100 125 TPC 2. Input Offset Voltage vs. Temperature –15 0.2 COMON-MODE VOLTAGE – V INPUT BIAS CURRENT – nA TA = 25/H11543C VS = /H1155015V –10 –5 0 5 10 15 0.4 0.6 0.8 1.0 TPC 5. Input Bias Current vs. Common-Mode Voltage FREQUENCY – Hz CURRENT NOISE DENSITY – fA/ Hz 1000 10 1k 100 100 TA = 25/H11543C VS = /H1155015V TPC 8. Current Noise Density vs. Frequency –Typical Performance Characteristics TIME – Minutes CHANGE IN OFFSET VOLTAGE – /H9262V 12 345 TA = 25/H11543C VS = /H1155015V TPC 1. Warm-Up Drift –75 300 250 200 100 150 TEMPERATURE – /H11543C INPUT OFFSET CURRENT – pA VS = /H1155015V –50 –25 0 25 50 75 100 125 TPC 4. Input Offset Current vs. Temperature FREQUENCY – Hz CURRENT NOISE DENSITY – nV/ Hz 1011 0 0 10 100 TA = 25/H11543C VS = /H1155015V TPC 7. Voltage Noise Density vs. Frequency –75 TEMPERATURE – /H11543C INPUT BIAS CURRENT – nA VS = /H1155015V –50 –25 0 25 50 75 100 125 TPC 3. Input Bias Current vs. Temperature FREQUENCY – Hz COMMON-MODE REJECTION – dB 100 120 140 10 100 1k 10k 100k TA = 25/H11543C VS = /H1155015V TPC 6. Common-Mode Rejection vs. Frequency TPC 9. 0.1 to 10Hz Noise

REV. A –7– OP200 SUPPLY VOLTAGE – V TOTAL SUPPLY CURRENT – mA 1.06 /H115502 /H115506 /H1155010 /H1155014 /H1155016 1.08 1.10 1.12 1.14 1.16 1.18 TWO AMPLIFIERS TA = 25/H11543C TPC 10. Total Supply Current vs. Supply Voltage –75 0.2 0.1 TEMPERATURE – /H11543C POWER SUPPLY REJECTION – /H9262V/V 0.3 0.4 0.5 0.6 0.7 –50 –25 0 25 50 75 100 125 TPC 13. Power Supply Rejection vs. Temperature FREQUENCY – Hz GAIN – dB 100 120 140 10 100 1k 10k 100k TA = 25/H11543C VS = /H1155015V AV = 1000 AV = 100 AV = 10 AV = 1 TPC 16. Closed Loop Gain vs. Frequency –75 1.11 TEMPERATURE – /H11543C SUPPLY CURRENT – mA TWO AMPLIFIERS VS = /H1155015V –50 –25 0 25 50 75 100 125 1.12 1.13 1.14 1.15 1.16 TPC 11. Total Supply Current vs. Temperature 1000 OPEN-LOOP GAIN – V/mV VS = /H1155015V RL = 2k/H9024 2000 3000 4000 5000 6000 –75 TEMPERATURE – /H11543C –50 –25 0 25 50 75 100 125 TPC 14. Open Loop Gain vs. Temperature FREQUENCY – Hz OUTPUT SWING – V p-p AT 1% Distortion 10 100 1k 10k TA = 25/H11543C VS = /H1155015V 100k TPC 17. Maximum Output Swing vs. Frequency 0.1 FREQUENCY – Hz POWER SUPPLY REJECTION – nA NEGATIVE SUPPLY 11 0 1 0 0 1 k 10k 100k 100 POSITIVE SUPPLY 120 140 TA = 25/H11543C TPC 12. Power Supply Rejection vs. Temperature FREQUENCY – Hz OPEN-LOOP GAIN – dB 100 120 140 10 100 1k 10k 100k TA = 25/H11543C VS = /H1155015V PHASE GAIN –20 180 135 PHASE SHIFT – Degrees TPC 15. Open Loop Gain and Phase Shift vs. Frequency FREQUENCY – Hz DISTORTION – % 10k1k100 0.001 TA = 25/H11543C VS = /H1155015V VOUT = 10V p-p RL = 2k/H9024 AV = 100 AV = 10 AV = 1 0.01 0.1 TPC 18. Total Harmonic Distortion vs. Frequency

REV. A OP200 –8– CAPACITIVE LOAD – nF OVERSHOOT – % 0.5 1.0 1.5 TA = 25/H11543C VS = /H1155015V RISING FALLING 1.0 1.5 3.0 TPC 19. Overshoot vs. Capacitive Load TPC 22. Large-Signal Transient Response OP200AZ VOUT VOUT = 5 + 40000 RG VIN + VREF 20k/H9024 5k/H9024 5k/H9024 OP200AZ VIN VREF RG 20k/H9024 –15V +15V Figure 4. Dual Low-Power Instrumentation Amplifier improves the capacitive load driving capability of the OP200.

APPLICATIONS

DUAL LOW-POWER INSTRUMENTATION AMPLIFIER A dual instrumentation amplifier that consumes less than 33 mW of power per channel is shown in Figure 4. The linearity of the instrumentation amplifier exceeds 16 bits in gains of 5 to 200 and is better than 14 bits in gains from 200 to 1000. CMRR is above 115 dB (Gain = 1000). Offset voltage drift is typically 0.2 mV/∞C over the military temperature range which is compa- rable to the best monolithic instrumentation amplifiers. The bandwidth of the low-power instrumentation amplifier is a func- tion of gain and is shown below: TIME – Minutes SHORT-CIRCUIT CURRENT – mA TA = 25/H11543C VS = /H1155015V SOURCING SINKING 01 345 TPC 20. Short-Circuit Current vs. Time TPC 23. Small-Signal Transient Response FREQUENCY – Hz CHANNEL SEPARATION – dB100 10 100 1k 10k 100k 110 120 130 140 150 TPC 21. Channel Separation vs. Frequency TPC 24. Small-Signal Transient Response CLOAD = 1 nF

REV. A OP200 –11– OUTLINE DIMENSIONS Dimensions shown in inches and (mm). PIN CONNECTIONS 16-Pin SOIC (S-Suffix) SEATING PLANE 0.0118 (0.30) 0.0040 (0.10) 0.0192 (0.49) 0.0138 (0.35) 0.1043 (2.65) 0.0926 (2.35) 0.050 (1.27) BSC 16 9 0.4193 (10.65) 0.3937 (10.00) 0.2992 (7.60) 0.2914 (7.40)PIN 1 0.4133 (10.50) 0.3977 (10.00) 0.0125 (0.32) 0.0091 (0.23) 8/H11543 0/H11543 0.0291 (0.74) 0.0098 (0.25)/H11547 45/H11543 0.0500 (1.27) 0.0157 (0.40) Epoxy MINI-DIP (P-Suffix) SEATING PLANE 0.060 (1.52) 0.015 (0.38)0.210 (5.33) MAX 0.022 (0.558) 0.014 (0.356) 0.160 (4.06) 0.115 (2.93) 0.070 (1.77) 0.045 (1.15) 0.130 (3.30) MIN 1 4 PIN 1 0.280 (7.11) 0.240 (6.10) 0.100 (2.54) BSC 0.430 (10.92) 0.348 (8.84) 0.195 (4.95) 0.115 (2.93) 0.015 (0.381) 0.008 (0.204) 0.325 (8.25) 0.300 (7.62) 8-Pin Hermetic DIP (Z-Suffix) 1 4 0.310 (7.87) 0.220 (5.59)PIN 1 0.005 (0.13) MIN 0.055 (1.4) MAX 0.100 (2.54) BSC 0.320 (8.13) 0.290 (7.37) 0.015 (0.38) 0.008 (0.20) SEATING PLANE 0.200 (5.08) MAX 0.405 (10.29) MAX 0.150 (3.81) MIN 0.200 (5.08) 0.125 (3.18) 0.023 (0.58) 0.014 (0.36) 0.070 (1.78) 0.030 (0.76) 0.060 (1.52) 0.015 (0.38)

REV. A–12– C00322–0–4/02(A) PRINTED IN U.S.A. OP200

Revision History

Data Sheet changed from REV. 0 to REV. A.