OP200ARC

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Rev. E | Page 2 of 16 TABLE OF CONTENTS

REVISION HISTORY

9/12—Rev. D to Rev. E 2/09—Rev. C to Rev. D 8/08—Rev. B to Rev. C Changes to Programmable High Resolution Window 2/04—Data Sheet changed from Rev. A to Rev. B. 4/02—Data Sheet changed from Rev. 0 to Rev. A.

Figure 3. Simplified Schematic (One of Two Amplifiers Shown)

Rev. E | Page 4 of 16 SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

VS = ±15 V , TA = 25°C, unless otherwise noted. Table 1. Parameter Symbol Conditions OP200A/E OP200G Unit Min Typ Max Min Typ Max INPUT CHARACTERISTICS Input Offset Voltage VOS 25 75 80 200 μV Long-Term Input Voltage Stability 0.1 0.1 μV/mo Input Offset Current IOS VCM = 0 V 0.05 1.0 0.05 3.5 nA Input Bias Current IB VCM = 0 V 0.1 2.0 0.1 5.0 nA Input Noise Voltage en p-p 0.1 Hz to 10 Hz 0.5 0.5 μV p-p Input Noise Voltage Density1 en fO = 10 Hz 22 36 22 nV/√Hz fO = 1000 Hz 11 18 11 nV/√Hz Input Noise Current in p-p 0.1 Hz to 10 Hz 15 15 pA p-p Input Noise Current Density in fO = 10 Hz 0.4 0.4 pA/√Hz Input Resistance Differential Mode RIN 10 10 MΩ Input Resistance Common Mode RINCM 125 125 GΩ Large Signal Voltage Gain AVO VO = ±10 V RL = 10 kΩ 5000 12000 3000 7000 M/mV RL = 2 kΩ 2000 3700 1500 3200 M/mV 1 Sample tested. VS = ±15 V , −55°C ≤ TA ≤ +125°C for OP200A, unless otherwise noted. Table 2. Parameter Symbol Conditions OP200A Unit Min Typ Max INPUT CHARACTERISTICS Input Offset Voltage VOS 45 125 μV Average Input Offset Voltage Drift TCVOS 0.2 0.5 μV/°C Input Offset Current IOS VCM = 0 V 0.15 2.5 nA Input Bias Current IB VCM = 0 V 0.9 5.0 nA Large Signal Voltage Gain AVO VO = 10 V RL = 10 kΩ 3000 9000 V/mV RL = 2 kΩ 1000 2700 V/mV Input Voltage Range1 IVR ±12 ±12.5 V Common-Mode Rejection Ratio CMRR VCM = ±12 V 115 130 dB Capacitive Load Stability AV = 1 8 nF POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 3 V to 18 V 0.2 3.2 μV/V Supply Current Per Amplifier ISY No load 600 775 μA OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 10 kΩ ±12 ±12.4 V RL = 2 kΩ ±11 ±12 V 1 Guaranteed by CMRR test.

Rev. E | Page 5 of 16 VS = ±15 V , TA = 25°C, unless otherwise noted. Table 3. Parameter Symbol Conditions OP200A/E OP200G Unit Min Typ Max Min Typ Max INPUT CHARACTERISTICS Input Voltage Range1 IVR ±12 ±13 ±12 ±13 V Common-Mode Rejection Ratio CMRR VCM = ±12 V 120 135 110 130 dB Channel Separation2 CS VO = 20 V p-p, fO = 10 Hz 123 145 123 145 dB Input Capacitance CIN 3.2 3.2 pF Capacitive Load Stability AV = 1, no oscillations 10 10 nF POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±3 V to ±18 V 0.4 1.8 0.6 5.6 μV/V Supply Current Per Amplifier ISY No load 570 725 570 725 μA OUTPUT CHARACTERISTICS Output Voltage Swing VO RL= 10 kΩ ±12 ±12.6 ±12 ±12.6 V RL = 2 kΩ ±11 ±12.2 ±11 ±12.2 V DYNAMIC PERFORMANCE Slew Rate SR 0.1 0.15 0.1 0.15 V/μs Gain Bandwidth Product GBP AV = 1 500 500 kHz 1 Guaranteed by CMRR test. 2 Guaranteed but not 100% tested. VS = ±15 V , −40°C ≤ TA ≤ +85°C, unless otherwise noted. Table 4. Parameter Symbol Conditions OP200E OP200G Unit Min Typ Max Min Typ Max INPUT CHARACTERISTICS Input Offset Voltage VOS 35 100 110 300 μV Average Input Offset Voltage Drift TCVOS 0.2 0.5 0.6 2.0 μV/°C Input Offset Current IOS VCM = 0 V 0.08 2.5 0.1 6.0 nA Input Bias Current IB VCM = 0 V 0 3 5.0 0.5 10.0 nA Large-Signal Voltage Gain AVO VO = ±10 V RL= 10 kΩ 3000 10,000 2000 5000 V/mV RL = 2 kΩ 1500 3200 1000 2500 V/mV Input Voltage Range1 IVR ±12 ±12.5 ±12 ±12.5 V Common-Mode Rejection Ratio CMRR VCM = ±12 V 115 130 105 130 dB Capacitive Load Stability AV = 1, no oscillations 10 10 nF POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±3 V to ±18 V 0.15 3.2 0.3 10.0 μV/V Supply Current Per Amplifier ISY No load 600 775 600 775 μA OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 10 kΩ ±12 ±12.4 ±12 ±12.4 V RL = 2 kΩ ±11 ±12 ±11 ±12.2 V 1 Guaranteed by CMRR test.

Rev. E | Page 7 of 16 ABSOLUTE MAXIMUM RATINGS Table 5. Parameter Rating Supply Voltage ±20 V Differential Input Voltage ±30 V Input Voltage Supply voltage Output Short-Circuit Duration Continuous Storage Temperature Range −65°C to +150°C Lead Temperature (Soldering, 60 sec) 300°C Junction Temperature Range (TJ) −65°C to +150°C Operating Temperature Range OP200A −55°C to +125°C OP200E, OP200G −40°C to +85°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE Table 6. Package Type θJA 1 θJC Unit 8-Lead CERDIP (Z Suffix) 148 16 °C/W 8-Lead Plastic DIP (P Suffix) 96 37 °C/W 16-Lead SOIC (S Suffix) 92 27 °C/W 1 θJA is specified for worst-case mounting conditions, that is, θJA is specified for device in socket for CERDIP and PDIP packages; θJA is specified for device soldered to printed circuit board for SOIC package. ESD CAUTION

(DAC A and DAC B, respectively). Figure 35. Programmable High Resolution Window Comparator

REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure 38. 16-Lead Standard Small Outline Package [SOIC_W] registered trademarks are the prop erty of their respective owners.