OP196GP

OP196 AD | Alldatasheet

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Technical content

REV. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. a Micropower, Rail-to-Rail Input and Output Operational Amplifiers OP196/OP296/OP496

FEATURES

Rail-to-Rail Input and Output Swing Low Power: 60 mA/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: +3 V to +12 V Low Offset Voltage: 300 mV max High Open-Loop Gain: 500 V/mV Unity-Gain Stable No Phase Reversal

APPLICATIONS

Portable Power Supply Control Portable Instrumentation GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera- tion from +3 V to +12 V make these amplifiers perfectly suited to monitor battery usage and to control battery charging. Their dynamic performance, including 26 nV/ √ Hz voltage noise density, recommends them for battery-powered audio applica- tions. Capacitive loads to 200 pF are handled without oscillation. The OP196/OP296/OP496 are specified over the HOT extended industrial (–40°C to +125°C) temperature range. +3 V opera- tion is specified over the 0 °C to +125°C temperature range. The single OP196 and the dual OP296 are available in 8-lead plastic DIP and SO-8 surface mount packages. The quad OP496 is available in 14-lead plastic DIP and narrow SO-14 surface mount packages. 8-Lead Narrow-Body SO OP196 OUT A NULL NCNULL –IN A +IN A NC = NO CONNECT PIN CONFIGURATIONS 8-Lead Narrow-Body SO OP296 OUT A –IN A +IN A OUT B –IN B +IN B 8-Lead Plastic DIP OP296 OUT B –IN B +IN B V+OUT A –IN A +IN A 14-Lead Plastic DIP OP496 OUT D –IN D +IN D +IN C –IN C OUT C OUT A –IN A +IN A +IN B –IN B OUT B 14-Lead Narrow-Body SO OP496 OUT D –IN D +IN D +IN C –IN C OUT C OUT A –IN A +IN A +IN B –IN B OUT B 8-Lead Plastic DIP OP196 OUT A NULL NCNULL –IN A +IN A NC = NO CONNECT 8-Lead TSSOP OP296 OUT A –IN A +IN A OUT B –IN B +IN B 4 5 14-Lead TSSOP (RU Suffix) OP496 OUT A –IN A +IN A OUT B –IN B +IN B OUT D –IN D +IN D OUT C +IN C –IN C 141 7 8 Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1998

OP196/OP296/OP496–SPECIFICATIONS ELECTRICAL SPECIFICATIONS Parameter Symbol Conditions Min Typ Max Units INPUT CHARACTERISTICS Offset Voltage V OS OP196G, OP296G, OP496G 35 300 µV –40°C ≤ TA ≤ +125°C 650 µV OP296H, OP496H 800 µV Input Bias Current I B –40°C ≤ TA ≤ +125°C ± 10 ± 50 nA Input Offset Current I OS ± 1.5 ± 8n A Input Voltage Range V CM 0 +5.0 V Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 5.0 V, –40°C ≤ TA ≤ +125°C6 5 d B Large Signal Voltage Gain A VO RL = 100 kΩ , 0.30 V ≤ VOUT ≤ 4.7 V, –40°C ≤ TA ≤ +125°C 150 200 V/mV Long-Term Offset Voltage V OS G Grade, Note 1 550 µV H Grade, Note 1 1 mV Offset Voltage Drift ΔVOS/ΔT G Grade, Note 2 1.5 µV/°C H Grade, Note 2 2 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High V OH IL = –100 µA 4.85 4.92 V IL = 1 mA 4.30 4.56 V IL = 2 mA 4.1 V Output Voltage Swing Low V OL IL = –1 mA 36 70 mV IL = –1 mA 350 550 mV IL = –2 mA 750 mV Output Current I OUT ± 4m A POWER SUPPLY Power Supply Rejection Ratio PSRR ± 2.5 V ≤ VS ≤ ±6 V, –40°C ≤ TA ≤ +125°C8 5 d B Supply Current per Amplifier I SY VOUT = 2.5 V, RL = ∞ 60 µA –40°C ≤ TA ≤ +125°C4 5 8 0 µA DYNAMIC PERFORMANCE Slew Rate SR R L = 100 kΩ 0.3 V/ µs Gain Bandwidth Product GBP 350 kHz Phase Margin ø m 47 Degrees NOISE PERFORMANCE Voltage Noise e n p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density e n f = 1 kHz 26 nV/ √Hz Current Noise Density i n f = 1 kHz 0.19 pA/ √Hz NOTES 1Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3. 2Offset voltage drift is the average of the –40 °C to +25°C delta and the +25 °C to +125 °C delta. Specifications subject to change without notice. –2– (@ VS = +5.0 V, VCM = +2.5 V, TA = +258C unless otherwise noted) REV. B

Parameter Symbol Conditions Min Typ Max Units INPUT CHARACTERISTICS Offset Voltage V OS OP196G, OP296G, OP496G 35 300 µV 0°C ≤ TA ≤ +125°C 650 µV OP296H, OP496H 800 µV 0°C ≤ TA ≤ +125°C 1.2 mV Input Bias Current I B ± 10 ± 50 nA Input Offset Current I OS ± 1 ± 8n A Input Voltage Range V CM 0 +3.0 V Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 3.0 V, 0°C ≤ TA ≤ +125°C6 0 d B Large Signal Voltage Gain A VO RL = 100 kΩ 80 200 V/mV Long-Term Offset Voltage V OS G Grade, Note 1 550 µV H Grade, Note 1 1 mV Offset Voltage Drift ΔVOS/ΔT G Grade, Note 2 1.5 µV/°C H Grade, Note 2 2 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High V OH IL = 100 µA 2.85 V Output Voltage Swing Low V OL IL = –100 µA7 0 m V POWER SUPPLY Supply Current per Amplifier I SY VOUT = 1.5 V, RL = ∞ 40 60 µA 0°C ≤ TA ≤ +125°C8 0 µA DYNAMIC PERFORMANCE Slew Rate SR R L = 100 kΩ 0.25 V/ µs Gain Bandwidth Product GBP 350 kHz Phase Margin ø m 45 Degrees NOISE PERFORMANCE Voltage Noise e n p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density e n f = 1 kHz 26 nV/ √Hz Current Noise Density i n f = 1 kHz 0.19 pA/ √Hz NOTES 1Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3. 2Offset voltage drift is the average of the 0 °C to +25°C delta and the +25 °C to +125 °C delta. Specifications subject to change without notice. OP196/OP296/OP496 REV. B –3– (@ VS = +3.0 V, VCM = +1.5 V, TA = +258C unless otherwise noted)

REV. B–4– ELECTRICAL SPECIFICATIONS Parameter Symbol Conditions Min Typ Max Units INPUT CHARACTERISTICS Offset Voltage V OS OP196G, OP296G, OP496G 35 300 µV 0°C ≤ TA ≤ +125°C 650 µV OP296H, OP496H 800 µV 0°C ≤ TA ≤ +125°C 1.2 mV Input Bias Current I B –40°C ≤ TA ≤ +125°C ± 10 ± 50 nA Input Offset Current I OS ± 1 ± 8n A Input Voltage Range V CM 0 +12 V Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ +12 V, –40°C ≤ TA ≤ +125°C6 5 d B Large Signal Voltage Gain A VO RL = 100 kΩ 300 1000 V/mV Long-Term Offset Voltage V OS G Grade, Note 1 550 µV H Grade, Note 1 1 mV Offset Voltage Drift ΔVOS/ΔT G Grade, Note 2 1.5 µV/°C H Grade, Note 2 2 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High V OH IL = 100 µA 11.85 V IL = 1 mA 11.30 V Output Voltage Swing Low V OL IL = –1 mA 70 mV IL = –1 mA 550 mV Output Current I OUT ± 4m A POWER SUPPLY Supply Current per Amplifier I SY VOUT = 6 V, RL = ∞ 60 µA –40°C ≤ TA ≤ +125°C8 0 µA Supply Voltage Range V S +3 +12 V DYNAMIC PERFORMANCE Slew Rate SR R L = 100 kΩ 0.3 V/ µs Gain Bandwidth Product GBP 450 kHz Phase Margin ø m 50 Degrees NOISE PERFORMANCE Voltage Noise e n p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density e n f = 1 kHz 26 nV/ √Hz Current Noise Density i n f = 1 kHz 0.19 pA/ √Hz NOTES 1Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3. 2Offset voltage drift is the average of the –40 °C to +25°C delta and the +25 °C to +125 °C delta. Specifications subject to change without notice. (@ VS = +12.0 V, VCM = +6 V, TA = +258C unless otherwise noted)

REV. B –5– ABSOLUTE MAXIMUM RATINGS 1 Storage Temperature Range Operating Temperature Range Junction Temperature Range Package Type uJA3 uJC Units 8-Lead Plastic DIP 103 43 °C/W 8-Lead SOIC 158 43 °C/W 8-Lead TSSOP 240 43 °C/W 14-Lead Plastic DIP 83 39 °C/W 14-Lead SOIC 120 36 °C/W 14-Lead TSSOP 180 35 °C/W NOTES 1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted. 2For supply voltages less than +15 V, the absolute maximum input voltage is equal to the supply voltage. 3θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket for P-DIP package; θJA is specified for device soldered in circuit board for SOIC and TSSOP packages. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP196/OP296/OP496 feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE ORDERING GUIDE Temperature Package Package Model Range Description Option OP196GP –40 °C to +125°C 8-Lead Plastic DIP N-8 OP196GS –40 °C to +125°C 8-Lead SOIC SO-8 OP296GP –40 °C to +125°C 8-Lead Plastic DIP N-8 OP296GS –40 °C to +125°C 8-Lead SOIC SO-8 OP296HRU –40 °C to +125°C 8-Lead TSSOP RU-8 OP496GP –40 °C to +125°C 14-Lead Plastic DIP N-14 OP496GS –40 °C to +125°C 14-Lead SOIC SO-14 OP496HRU –40 °C to +125°C 14-Lead TSSOP RU-14

Figure 25. Supply Current/Amplifier vs. Temperature Figure 26. Supply Current/Amplifier vs. Supply Voltage

10 VOLTAGE NOISE DENSITY – nV/ Hz

Figure 27. Voltage Noise Density vs. Frequency Figure 28. Input Bias Current Noise Density vs. Frequency Figure 29. Settling Time to 0.1% vs. Step Size Figure 30. 0.1 Hz to 10 Hz Noise

• Refer to “README.DOC” file for License Statement.
• terms and provisions in the License Statement.

Figure 48. A Single Supply RTD Amplifier

REV. B–16– OUTLINE DIMENSIONS Dimensions shown in inches and (mm). C2051b–0–2/98PRINTED IN U.S.A. 8-Lead Plastic DIP (N-8) 0.430 (10.92) 0.348 (8.84) 0.280 (7.11) 0.240 (6.10) PIN 1 SEATING PLANE0.022 (0.558) 0.014 (0.356) 0.060 (1.52) 0.015 (0.38) 0.210 (5.33) MAX 0.130 (3.30) MIN 0.070 (1.77) 0.045 (1.15)0.100 (2.54) BSC 0.160 (4.06) 0.115 (2.93) 0.325 (8.25) 0.300 (7.62) 0.015 (0.381) 0.008 (0.204) 0.195 (4.95) 0.115 (2.93) 8-Lead Narrow Body SOIC (SO-8) 0.1968 (5.00) 0.1890 (4.80) 8 5 0.2440 (6.20) 0.2284 (5.80) PIN 1 0.1574 (4.00) 0.1497 (3.80) 0.0688 (1.75) 0.0532 (1.35)SEATING PLANE 0.0098 (0.25) 0.0040 (0.10) 0.0192 (0.49) 0.0138 (0.35) 0.0500 (1.27) BSC 0.0098 (0.25) 0.0075 (0.19) 0.0500 (1.27) 0.0160 (0.41) 0.0196 (0.50) 0.0099 (0.25)x 45° 8-Lead TSSOP (RU-8) 8 5 0.122 (3.10) 0.114 (2.90) 0.256 (6.50) 0.246 (6.25) 0.177 (4.50) 0.169 (4.30) PIN 1 0.0256 (0.65) BSC SEATING PLANE 0.006 (0.15) 0.002 (0.05) 0.0118 (0.30) 0.0075 (0.19) 0.0433 (1.10) MAX 0.0079 (0.20) 0.0035 (0.090) 0.028 (0.70) 0.020 (0.50) 14-Lead Plastic DIP (N-14) 0.795 (20.19) 0.725 (18.42) 0.280 (7.11) 0.240 (6.10) PIN 1 SEATING PLANE0.022 (0.558) 0.014 (0.356) 0.060 (1.52) 0.015 (0.38) 0.210 (5.33) MAX 0.130 (3.30) MIN 0.070 (1.77) 0.045 (1.15) 0.100 (2.54) BSC 0.160 (4.06) 0.115 (2.93) 0.325 (8.25) 0.300 (7.62) 0.015 (0.381) 0.008 (0.204) 0.195 (4.95) 0.115 (2.93) 14-Lead Narrow-Body SOIC (SO-14) 14 8 0.3444 (8.75) 0.3367 (8.55) 0.2440 (6.20) 0.2284 (5.80) 0.1574 (4.00) 0.1497 (3.80) PIN 1 SEATING PLANE 0.0098 (0.25) 0.0040 (0.10) 0.0192 (0.49) 0.0138 (0.35) 0.0688 (1.75) 0.0532 (1.35) 0.0500 (1.27) BSC 0.0099 (0.25) 0.0075 (0.19) 0.0500 (1.27) 0.0160 (0.41) 0.0196 (0.50) 0.0099 (0.25)x 45° 14-Lead TSSOP (RU-14) 14 8 0.201 (5.10) 0.193 (4.90) 0.256 (6.50) 0.246 (6.25) 0.177 (4.50) 0.169 (4.30) PIN 1 SEATING PLANE 0.006 (0.15) 0.002 (0.05) 0.0118 (0.30) 0.0075 (0.19) 0.0256 (0.65) BSC 0.0433 (1.10) MAX 0.0079 (0.20) 0.0035 (0.090) 0.028 (0.70) 0.020 (0.50)