OP193FS-REEL

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Rev. C | Page 2 of 20 TABLE OF CONTENTS A Low Power, Temperature to 4 mA to 20 mA

REVISION HISTORY

9/09—Rev. B to Rev. C Deleted 8-Lead Epoxy DIP Pin Configurations for OP193 and OP293, and 14-Lead Epoxy DIP and 16-Lead Wide Body SOL Changes to Offset Voltage Parameter and Large Signal Voltage Gain, RL = 100 kΩ, −10 V ≤ VOUT ≤ +10 V Parameter, and Changes to Offset Voltage Parameter and Power Supply Changes to Offset Voltage Parameter and Power Supply Changes to Offset Voltage Parameter and Power Supply Deleted A Micropower, Single-Supply Quad Voltage Output Deleted A Single-Supply Micropower Quad Programmable- Changes to Output Phase Reversal—OP293 Section, Battery- Changes to Figure 31, A Single-Supply Current Monitor Changes to A Low Power, Temperature to 4 mA to 20 mA 1/02—Rev. A to Rev. B

Rev. C | Page 3 of 20 SPECIFICATIONS ELECTRICAL SPECIFICATIONS VS = ±15.0 V , TA = 25°C, unless otherwise noted. Table 1. E Grade F Grade Parameter Symbol Conditions Min Typ Max Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS OP193 150 μV OP193, −40°C ≤ TA ≤ +125°C 250 μV OP293 100 250 μV OP293, −40°C ≤ TA ≤ +125°C 200 350 μV Input Bias Current IB VCM = 0 V, −40°C ≤ TA ≤ +125°C 15 20 nA Input Offset Current IOS VCM = 0 V, −40°C ≤ TA ≤ +125°C 2 4 nA Input Voltage Range VCM −14.9 +13.5 −14.9 +13.5 V Common-Mode Rejection CMRR −14.9 V ≤ VCM ≤ +14 V 100 116 97 116 dB 97 94 dB Large Signal Voltage Gain AVO RL = 100 kΩ, −10 V ≤ VOUT ≤ +10 V 500 600 500 600 V/mV −40°C ≤ TA ≤ +85°C 300 300 V/mV −40°C ≤ TA ≤ +125°C 300 300 V/mV Large Signal Voltage Gain AVO RL = 10 kΩ, −10 V ≤ VOUT ≤ +10 V 350 350 V/mV −40°C ≤ TA ≤ +85°C 200 200 V/mV −40°C ≤ TA ≤ +125°C 150 150 V/mV Large Signal Voltage Gain AVO RL = 2 kΩ, −10 V ≤ VOUT ≤ +10 V 200 200 V/mV −40°C ≤ TA ≤ +85°C 125 125 V/mV −40°C ≤ TA ≤ +125°C 100 100 V/mV Long-Term Offset Voltage1 VOS 150 300 μV Offset Voltage Drift2 ΔVOS/ΔT 0.2 1.75 μV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High VOH IL = 1 mA 14.1 14.2 14.1 14.2 V IL = 1 mA, −40°C ≤ TA ≤ +125°C 14.0 14.0 V IL = 5 mA 13.9 14.1 13.9 14.1 V Output Voltage Swing Low VOL IL = −1 mA −14.7 −14.6 −14.7 −14.6 V IL = −1 mA, −14.4 −14.4 V Short-Circuit Current ISC ±25 ±25 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±1.5 V to ±18 V 100 120 97 120 dB −40°C ≤ TA ≤ +125°C 97 94 dB Supply Current per Amplifier ISY VOUT = 0 V, VS = ±18 V, 30 30 μA NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 65 65 nV/√Hz Current Noise Density in f = 1 kHz 0.05 0.05 pA/√Hz Voltage Noise en p-p 0.1 Hz to 10 Hz 3 3 μV p-p

Rev. C | Page 4 of 20 E Grade F Grade Parameter Symbol Conditions Min Typ Max Min Typ Max Unit DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 15 15 V/m s Gain Bandwidth Product GBP 35 35 kHz Channel Separation VOUT = 10 V p-p, RL = 2 kΩ, f = 1 kHz 120 120 dB 1 Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125 °C, with an LTPD of 1.3. 2 Offset voltage drift is the average of the −40°C to +25°C delta and the +25°C to +125°C delta. VS = 5.0 V , VCM = 0.1 V , TA = 25°C, unless otherwise noted. Table 2. E Grade F Grade Parameter Symbol Conditions Min Typ Max Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS OP193 150 μV OP193, −40°C ≤ TA ≤ +125°C 250 μV OP293 100 250 μV OP293, −40°C ≤ TA ≤ +125°C 200 350 μV Input Bias Current IB −40°C ≤ TA ≤ +125°C 15 20 nA Input Offset Current IOS −40°C ≤ TA ≤ +125°C 2 4 nA Input Voltage Range VCM 0 4 0 4 V Common-Mode Rejection CMRR 0.1 V ≤ VCM ≤ 4 V 100 116 96 116 dB

0.1 V ≤ VCM ≤ 4 V,

Large Signal Voltage Gain AVO RL = 100 kΩ, 0.03 V ≤ VOUT ≤ 4.0 V 200 200 V/mV −40°C ≤ TA ≤ +85°C 125 125 V/mV −40°C ≤ TA ≤ +125°C 130 130 V/mV Large Signal Voltage Gain AVO RL = 10 kΩ, 0.03 V ≤ VOUT ≤ 4.0 V 75 75 V/mV −40°C ≤ TA ≤ +85°C 50 50 V/mV −40°C ≤ TA ≤ +125°C 70 70 V/mV Long-Term Offset Voltage1 VOS 150 300 μV Offset Voltage Drift2 ΔVOS/ΔT 0.2 1.25 μV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High VOH IL = 100 μA 4.4 4.4 V IL = 1 mA 4.1 4.4 4.1 4.4 V IL = 1 mA, IL = 5 mA 4.0 4.4 4.0 4.4 V Output Voltage Swing Low VOL IL = −100 μA 140 160 140 160 mV IL = −100 μA, −40°C ≤ TA ≤ +125°C 220 220 mV No load 5 5 mV IL = −1 mA 280 400 280 400 mV IL = −1 mA, −40°C ≤ TA ≤ +125°C 500 500 mV IL = –5 mA 700 900 700 900 mV Short-Circuit Current ISC ±8 ±8 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±1.7 V to ±6.0 V 100 120 97 120 dB −40°C ≤ TA ≤ +125°C 94 90 dB Supply Current per Amplifier ISY VCM = 2.5 V, RL = ∞ 14.5 14.5 μA

Rev. C | Page 5 of 20 E Grade F Grade Parameter Symbol Conditions Min Typ Max Min Typ Max Unit NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 65 65 nV/√Hz Current Noise Density in f = 1 kHz 0.05 0.05 pA/√Hz Voltage Noise en p-p 0.1 Hz to 10 Hz 3 3 μV p-p DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 12 12 V/ms Gain Bandwidth Product GBP 35 35 kHz 1 Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125 °C, with an LTPD of 1.3. 2 Offset voltage drift is the average of the −40°C to +25°C delta and the +25°C to +125°C delta.

Rev. C | Page 6 of 20 VS = 3.0 V , VCM = 0.1 V , TA = 25°C, unless otherwise noted. Table 3. E Grade F Grade Parameter Symbol Conditions Min Typ Max Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS OP193 150 μV OP193, −40°C ≤ TA ≤ +125°C 250 μV OP293 100 250 μV OP293, −40°C ≤ TA ≤ +125°C 200 350 μV Input Bias Current IB −40°C ≤ TA ≤ +125°C 15 20 nA Input Offset Current IOS −40°C ≤ TA ≤ +125°C 2 4 nA Input Voltage Range VCM 0 2 0 2 V Common-Mode Rejection CMRR 0.1 ≤ VCM ≤ 2 V 97 116 94 116 dB 0.1 ≤ VCM ≤ 2 V, 90 87 dB Large Signal Voltage Gain AVO RL = 100 kΩ,

0.03 V ≤ VOUT ≤ 2 V 100 100 V/mV

−40°C ≤ TA ≤ +85°C 75 75 V/mV −40°C ≤ TA ≤ +125°C 100 100 V/mV Long-Term Offset Voltage1 VOS 150 300 μV Offset Voltage Drift2 ΔVOS/ΔT 0.2 1.25 μV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High VOH IL = 1 mA 2.1 2.14 2.1 2.14 V IL = 1 mA, –40°C ≤ TA ≤ +125°C 1.9 1.9 V IL = 5 mA 1.9 2.1 1.9 2.1 V Output Voltage Swing Low VOL IL = −1 mA 280 400 280 400 mV IL = −1 mA, −40°C ≤ TA ≤ +125°C 500 500 mV IL = −5 mA 700 900 700 900 mV Short-Circuit Current ISC ±8 ±8 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = +1.7 V to +6 V 100 97 dB −40°C ≤ TA ≤ +125°C 94 90 dB Supply Current per Amplifier ISY VCM = 1.5 V, RL = ∞ 14.5 22 14.5 22 μA −40°C ≤ TA ≤ +125°C 22 22 μA Supply Voltage Range VS +2 ±18 +2 ±18 V NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 65 65 nV/√Hz Current Noise Density in f = 1 kHz 0.05 0.05 pA/√Hz Voltage Noise en p-p 0.1 Hz to 10 Hz 3 3 μV p-p DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 10 10 V/m s Gain Bandwidth Product GBP 25 25 kHz Channel Separation VOUT = 10 V p-p, RL = 2 kΩ, f = 1 kHz 120 120 dB 1 Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125 °C, with an LTPD of 1.3. 2 Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.

Rev. C | Page 7 of 20 VS = 2.0 V , VCM = 0.1 V , TA = 25°C, unless otherwise noted. Table 4. E Grade F Grade Parameter Symbol Conditions Min Typ Max Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS OP193 150 μV OP193, −40°C ≤ TA ≤ +125°C 250 μV OP293 100 250 μV OP293, −40°C ≤ TA ≤ +125°C 175 350 μV Input Bias Current IB −40°C ≤ TA ≤ +125°C 15 20 nA Input Offset Current IOS −40°C ≤ TA ≤ +125°C 2 4 nA Input Voltage Range VCM 0 1 0 1 V Large Signal Voltage Gain AVO RL = 100 kΩ,

0.03 V ≤ VOUT ≤ 1 V 60 60 V/mV

−40°C ≤ TA ≤ +125°C 70 70 V/mV Long-Term Offset Voltage VOS 150 300 μV POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 1.7 V to 6 V 100 97 dB −40°C ≤ TA ≤ +125°C 94 90 dB Supply Current/Amplifier ISY VCM = 1.0 V, RL = ∞ 13.2 20 13.2 20 μA −40°C ≤ TA ≤ +125°C 25 25 μA Supply Voltage Range VS +2 ±18 +2 ±18 V NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 65 65 nV/√Hz Current Noise Density in f = 1 kHz 0.05 0.05 pA/√Hz Voltage Noise en p-p 0.1 Hz to 10 Hz 3 3 μV p-p DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 10 25 V/ms Gain Bandwidth Product GBP 25 kHz

1 For supply voltages less than ±18 V, the input voltage is limited to the

soldered in a circuit board for surface-mount packages. Table 6. Thermal Resistance soldered in a circuit board for the SOIC package.

a large amount of input protection from overvoltage conditions. without damaging the amplifier. reducing equipment downtime and operating cost. weight, and high energy density relative to older primary cells.

1 Ah lithium cell powering the OP193 and OP293, with each

amplifier, in turn, driving 2.1 V into a 100 kΩ load. Figure 27. Lithium Sulfur Dioxide Cell Discharge Characteristic with is recommended for applications requiring high null resolution. cient does not exceed ±100 ppm/°C. Figure 28. Offset Nulling Circuit Figure 29. High Resolution Offset Nulling Circuit

greatly simplifies the calibration procedure. made. Adjusting the zero trim does not affect the gain. Table 7. R6 Values vs. Temperature Figure 36. This circuit provides triangle and square wave triangle wave with upper and lower levels of 3.33 V and 1.67 V . The output of A2 is a square wave with almost rail-to-rail swing. However, the frequency can easily be changed by varying C1. The circuit operates well up to 500 Hz.

1 IN/OUT

2 OUT/IN

3 OUT/IN S2

4 IN/OUT

6 CONT

5 CONT

7 IN/OUT 8

Figure 36. Micropower Voltage Controlled Oscillator

REFERENCE ONLYAND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure 37. 8-Lead Standard Small Outline Package [SOIC_N]

Rev. C | Page 19 of 20 NOTES

Rev. C | Page 20 of 20 NOTES ©1995–2009 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D00295-0-9/09(C)