OP02AJ

OP02 AD | Alldatasheet

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FEATURES compatibility, ease of application, and low cost. Key specifi- © Excellent DC Specifications cations, such as Vos, los, Is, CMRR, PSRR, and Ayo are © Silicon-Nitride Passivation Passivation” process reduces “popcorn noise.” A thermally- © 125°C Tested Dice Available symmetrical input-stage design provides low input offset © “Premium” 741 Replacement voltage drift and insensitivity to output load conditions. * Available in Die Form The OP-02 is a direct replacement for the 741. It is ideal for upgrading existing designs where accuracy improvements are required and for eliminating special low-drift or low-noise ORDERING INFORMATION ' selected types. See PACKAGE Vog MAX CERDIP PLASTIC TEMPERATURE = PIN CONNECTIONS (mv) TO-99 ‘8-PIN 8-PIN RANGE enc

05 OPO2AJ* OPO2AZ* - MIL

20 OP02J/883 OP02Z = MIL BALT 7M

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5.0 - - oPo2DP COM > TO-99 + Fordev 10 MIL-STD-689, add 883 after part ~ SOUT (J-Suftix) ices processed in total compliance to MIL-STD-883, add /883 after part number. Consult factory for 883 data sheet. t Burn-in is available on commercial and industrial temperature range parts in Na SBAL CerDIP, plastic DIP, and TO-can packages. BAL ato B nc, “YAS a a B ne. an C2] fF) v. “4 fv ww GP Pour ow GPP our v fe} ean v GY fe) ea GENE ‘AL DESCRIPTION . - 8-PIN HERMETIC DIP EPOXY MINI-DIP This high-performance general-purpose operational ampli- (2-Suffix) (P-Suftix) fier provides significant improvements over industry-standard and “premium” 741 types while maintaining pin-for-pin SIMPLIFIED SCHEMATIC "21, 62,03 AND of FonM & jeu ses Go sno 8t . zy J joe L our HES ote sna l b eatance Saatance he -1-

ABSOLUTE MAXIMUM RATINGS (Note 1) " " Tereneneeeennenneneeenees PACKAGE TYPE @,, (Note 2) 8 UNITS Output Short-Circuit Duration «0... eee Indefinite 8-Pin Hermetic DIP (Z) 162 26 “Cw Operating Temperature Range 8-Pin Plastic DIP (P) 110 50 “Cw © - . @,, is specified for worst case mounting conditions, i.e., 6, is specified for Junction Temperature T) settsaeessesesseessseesseee —B5°C tO +150°C ELECTRICAL CHARACTERISTICS at Vs = + 15V, Ta = 25°C, unless otherwise noted. i Oooo OP-02 OP-02A OP-02C OP-02D PARAMETER SYMBOL _ CONDITIONS MIN. TYP MAX MIN TYP MAX MIN TYP MAX UNITS Input Offset Voltage Vos Rg < 20k. — 03 05 - 1 2 - 3 5 mv Input Offset Current los - 05 2 _ 1 5 _— 5 25 nA Input Bias Current Ig - % 3 — 2 50 — 30 100 nA Input Resistance- Dilferential- Mode Rw (Note 2) 34 67 20 52 = 1035 0 = Mo Input Voltage Range IVR +10 +130 — #10 +190 — +10 +180 — v ‘Common-Mode Vom =+10V Rejection Ratio cMRR Rg $ 20k. ss 1000 — a 95 70 88 — ry Power Supply Vg= +5 to +20V _ _ _ tion Ratio PSRR Res 20K 10 «60 30 100 100 150 WN Output Voltage Swing Vo RL 2 2k +120 «+13 = +12 £13 =_ 2120 «£13 fad v Large-Signal RL2 2k _ _ _ Vonage Gain Avo Vo=ti0v 100 250 50 200 25 150 vimv Power Consumption Py Vo=0V - #0 7 - 0 © — 5 mw Input Noise Voltage np-p 0.1Hz to 10Hz — 06 — — 06 — — 065 — Vp-p Nee msi en fo= 100Hz - 2 - - 2 = — 2 — — nWwie i y fo= 1000Hz -— a -— aH -— a = Input Noise Current inp-p O.1Hz to 10Hz = 280 — — 28° — — 28 — PApp ee ee onsit a fo= 100Hz — o7 = —- o7 = = 07 — — paiz ut id fo= 1000Hz — 04 = — 04 — — 04 — Slew Rate sR (Note 1) 02 05 — 025 05 — 025 05 — Wus Large-Signal Vo = 20Vp-p _ _ _ Bandwidth (Notes 1, 4) 4 8 4 8 4 é kHz Closed-Loop Avo. =+1 _ _ _ Bandwidth Bw (Note 3) ' 13 ' 18 ' 13 MHz Avo. = +1 _ _ _ Risetime te Vy = SOmV (Note 1) 200 ©=350 200 «350 200 «350 ns Overshoot os (Note 1) — 5 0 - 5 0 -— 5 0 % NOTES: 1, Sample tested. 2. Guaranteed by input bias current. 3, Guaranteed by maximum risetime. 4, Guaranteed by minimum slew rate -2-

ELECTRICAL CHARACTERISTICS at V, = +15V, -55°C = T, +125°C, unless otherwise noted. ee _ OP-02A OP-02 PARAMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX —_UNITS Input Offset Voltage Vos Ry = 20kQ - Os 1 - 14 3 mv Average Input Offset Voltage Drift (Note 1) TVos Rg = 50a ~ 2 8 - ‘ ‘0 wre Input Offset Current los - 1 5 - 2 10 nA ‘Average Input Offset 7 Curent Drit Note 1) “Clos. ans = 18 182 pare Input Bias Current |g - 30 60 - 40 100 nA Input Voltage Range wR a10 0-213 - 2100 213 - v ‘Common-Mode Vow=2t0V cm - - Rejection Ratio OMAR Rag = 20k so s 8 8 Power Supply Vg = #5V to 220V Rejection Ratio PSRR Rs «20k - 10 60 - 30 100 wv Large-Signal R, = 2k Voltage Gain No Yo =s10V 50 100 - 25 60 Vim Output Voltage Swing Vo R, 2k 20213 - #120 413 ~ v ELECTRICAL CHARACTERISTICS at Vs = + 15V, 0°C < Ta < +70°C, unless otherwise noted. a OP-02C OP-02D PARAMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX UNITS Input Offset Voltage Vos Rg < 20K. - 2 3 - 3 6 mv Average Input Offset _ _ _ Voltage Dritt (Note 1) "CVos_ s= 500 sr 8» wre Input Offset Current los — 14 10 - 5 50 nA ‘Average Input Offset - 1 - 7 Current Dritt (Note 1) Tl08 S750 o 5% pare Input Bias Current I = 2 100 = 50 200 nA Input Voltage Range IVR +10 210 — +100 +3 — v Common-Mode Vom= 210V 90 - 7 - Rejection Ratio OMPR Ass 20k0. 80 o 8 ae Power Supply Vg =+5 to +20V _ 30 100 _ 100 1 Rejection Ratio PSRR ig < 20k 80 id Large-Signal ery 26 60 - 1s - vim Voltage Gain Avo Vo=+10V 28 Output Voltage Swing Vo. RL>2kn +2 +1800 +10 +1300 v NOTE: 1, Sample tested. a

DICE CHARACTERISTICS (125°C TESTED DICE AVAILABLE) ce a 1. NULL aa 2. INVERTING INPUT ri cy =n 3. NONINVERTING INPUT | 4. V- = . I Ps Fi 5. NULL Feiplle Sees ge Se § ouTPUT DIE SIZE 0.047 x 0.043 inch, 2021 sq. mils (149 X 1.09 mm, 1.30 sq. mm) WAFER TEST LIMITS at Vs = + 15V, Ta = 25°C for OP-02N, OP-02G and OP-02GR devices; Ta = 125°C for OP-O2NT and OP-02GT devices, unless otherwise noted. OP-02NT OP-02N OP-02GT OP-02G OP-02GR PARAMETER SYMBOL CONDITIONS LIMIT uMIT LMT uMIT LIMIT UNITS Input Offset Voltage Vos Rig = 20knt 1 05 3 2 5 mV MAX Input Offset Current los 5 3 6 5 25 nAMAX Input Bias Current Ig 50 30 60 50 200 nAMAX Input Voltage Range IVR 213 £3 213 213 £13 Vv MIN Common-Mode Vom == 10V Rejection Ratio MRR ng = 20K 80 85 80 80 70 6B MIN Power Supply Vg = =8V to 220V Mapsteeratio PSR 20K 60 60 100 100 150 WV MAX Output Voltage Swing Vo RL > 2k £2 2 +12 212 212 Vv MIN Large-Signal Ry 2 ako Vetage Gain Avo Wyn ti0V 50 100 25 50 25° Vimv MIN Power Consumption Py Vo=0v _ 90 _ 20 90. mWMAX NOTE: For 25°C characteristics of NT and GT devices, see N and G characteristics, respectively. Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging 1s not Guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing TYPICAL ELECTRICAL CHARACTERISTICS at Vs = + 15V, Ta = 25°C, unless otherwise noted. OP-02NT OP-02GT OP-02N OP-02G OP-02GR PARAMETER SYMBOL CONDITIONS TYPICAL TYPICAL TYPICAL UNITS Input Resistance Differential-Mode Rin 57 52 3s Mo Input Noise Voltage enp-p 0.1Hz to 10H2 0.65 0.65 0.65 pp fo = toHz 25 25 25 7 panies en fo = 100Hz 22 22 22 nv Voltage Density fo = 1000Hz 21 2 2 Input Noise Current app O.1H2 to 10H2 128 128 128 Papp N to = 10Hz 1 14 14 tne ie in fo= 100Hz 07 07 07 paz turrent Density fo= 1000Hz 04 oa 04 Siew Rate SR 0s 0s 05 Vius Large-Signal - oe cath Vo = 20Vp-p 8 8 8 kHz Closed-Loop . Seen Bw Ava = +1 13 13 13 MHz =41 Risetime tr ne som 200 200 200 ns Overshoot os 18 18 18 % Average Input Offset Rig = 5000 . Voltage Drift TCVos Note 1) 2 4 8 wee ‘Average Input Offset ° Caneat Drift TClos 75 18 30 parc NOTE: 1. Sample tested.

w BURN-IN CIRCUIT OFFSET NULLING CIRCUIT ° 2 z 2 u ° > te © -20v Ov TYPICAL PERFORMANCE CHARACTERISTICS INPUT WIDEBAND NOISE vs. INPUT SPOT NOISE INPUT SPOT NOISE BANDWIDTH (0.1Hz TO VOLTAGE vs FREQUENCY CURRENT vs FREQUENCY FREQUENCY INDICATED) | SSE EE vs sto Ht RS Ea ea asa emer

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0.01 010 1.0 10 100 1000 0.01 0.10 10 0 100, 1000 a 10 0 wo FREQUENCY (Hz) FREQUENCY (Hz) BANDWIDTH (kHz) DIFFERENTIAL OUTPUT VOLTAGE vs INPUT RESISTANCE POWER CONSUMPTION LOAD RESISTANCE vs TEMPERATURE vs POWER SUPPLY

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POV «= ot eee) CP : | § eos § Fee per BCA TN FP) E | : SOCIETIES RCPS beG eee ‘on rn = F PF =a ie A) oe es | LOAD RESISTANCE TO GROUND (k2) TEMPERATURE [C) TOTAL SUPPLY VOLTAGE, V+ TO V~ (VOLTS) -5-

TYPICAL PERFORMANCE CHARACTERISTI wvemeur orewoor eam POWER CONSUMPTION aera aT Tine vs TEMPERATURE vs TEMPERATURE . c =» TH = NEE FT] Pe TTT) pp bedee ergo ncaserexces i ae PELL LN Ws DINGS SSE sore essa PCT PONS eS saeeas POLE)? |S Ee eet Et CURRENT vs TEMP! “Pee TT) =“ 4 Hee) et 4 BEHE pete Ae) ERS eT PRN PRS Feet Eeaniaanen ee Ganannes EEEREP PRY SOT | EE am foal ed +20 +60 * ‘TEMPERATURE (°C) WER SUPPLY vorta CMRR vs FREQUENCY PSRR vs FREQUENCY POWER SUPPLY VOLTAGE we r "“Avs-- EE CE) —ié* Re WM A Res ET ea eC S = taina AT) SING 7 0 is A ; PEEEEEES tiriN ti CN Poe et WO W\\ PEERS IIIT i 3 PERSE) HnICTITINT CEI IN FESR i A = HNN a ee 0 BN A Ea ® Sowensumeyvors FREQUENCY) -6-

TYPICAL PERFORMANCE CHARACTERISTICS CLOSED-LOOP RESPONSE MAXIMUM UNDISTORTED OPEN-LOOP FOR VARIOUS GAIN OUTPUT vs FREQUENCY FREQUENCY RESPONSE CONFIGURATIONS a A oo "TT aailieccann PEN “ARCH eA || XI - NM of onal no PSH a a” SCM & RAR ARO -LLEN a8 S A ALAS eT TT TN SCCM TM ) = SEE EE TTT J TYPICAL APPLICATIONS HIGH-STABILITY VOLTAGE REFERENCE a na [ aks 3 2m © Vour = *10v RS = 6.4k52, Yz ABSOLUTE VALUE CIRCUIT ron toe tore DESIGN EQUATIONS. Teena? aioe - 08Vo81 t -)-

Bi B2 83 B4 BS BE B7 BB IgmA Eo gatsv — FULL-SCALE to -1LSB 1 4 4 1°14 4 1 14+ 1,992 9.960 5.000482 8 So __— + 4 FULL-SCALE ncrov Ae oles 11°14 4 1 4 0 1,984 -9.920 pace HALF-SCALE son _ sm : - 3 ho2 +LSB 1.0 0 0 0 0 0 14 1.008 -5.040 ti ae HALF-SCALE 1 0 0 0 0 0 0 0 1.000 -5.000 FOR COMPLEME! HALF-SCALE Logic DAC) CONNECT NON INVERTING INPUT OF OF-AME TO. wise o 1 1 14 1 4 4 1 0992 -4.960 TS tin2). CONNECT fg rival To GROUND ZERO-SCALE Se 0 0 0 0 0 0 0 1 0.0008 -0.040 ZERO-SCALE 0 0 0 0 0 0 0 0 000 0000