NPT40 NAINA | Alldatasheet
Document overview
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Technical content
Features
- Improved glass passivation for high reliability
- Exceptional stability at high temperatures
- Metric thread type available
- Low thermal resistance Notes: (1) All values apply in either direction Electrical Characteristics (T A = 25 0C unless otherwise specified) Parameter Symbol Part Numbers Units Maximum repetitive peak reverse voltage (1), V RRM
200 NPT402
600 NPT406
RMS on-state current IT(RMS) 40 A Non-repetitive peak surge on-state current, one cycle I TSM 400 A Peak gate trigger current IGTM 12 A Peak gate power dissipation @ I GT ≤ I GTM P GM 40 W Average gate power dissipation P G(AV) 0.75 W Peak off-state current (1) I DRM & IRRM 1.0 mA Maximum instantaneous forward voltage drop (1) V TM 2.0 V DC holding current (1) IH 60 mA Critical rate-of-rise of off-state voltage (1) Crit ical dv/dt 200 V/µsec Critical rate-of-rise of commutation voltage (1) Co mmutating dv/dt 3 V/µsec DC gate trigger current (T 2+ Gate +, T2 - Gate -) Quads I and III IGT 100 mA (T 2+ Gate - , T 2 - Gate +) Quads II and IV 150 DC gate trigger voltage VGT 2.5 V Gate controlled turn-on time Tgt 3 µsec Thermal and Mechanical Specifications (T A = 25 oC, unless otherwise noted) Parameters Symbol Values Units Maximum operating junction temperature range T J - 40 to +110 oC Maximum storage temperature range Tstg - 40 to +150 oC Maximum thermal resistance, junction to case R θ(J-C) 1.8 oC/W Approximate weight W 15 g TO -203 /F
Naina Semiconductor Ltd. NPT40
2 D-95, Sector 63, Noida – 201301, India • Tel: 012 0-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com Package Outline (All dimensions in mm) Ordering Table NPT 40 2,4,6 1 2 3 1 – Press Fit Triac 2 – Current, I T(RMS) 3 – Voltage, V RRM (See table)