NPT35050A MA-COM | Alldatasheet

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Technical content

NDS-003 Rev.3, April 2013NPT35050A Page 1 3300 - 3800 MHz

65 Watt, 28 Volt

Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology RF Specifications (CW): VDS = 28V, IDQ = 750mA, Frequency = 3500MHz, T C = 25°C, Measured in Nitronex Test Fixture Typical 2-Tone Performance: VDS = 28V, IDQ = 750mA, Frequency = 3500MHz, Tone Spacing = 0.1MHz, TC = 25°C Measured in Load-Pull System Symbol Parameter Typ Units P3dB,PEP Peak Envelope Power at 3dB Compression 93 W P1dB,PEP Peak Envelope Power at 1dB Compression 55 W PIMD3 Peak Envelope Power at -35dBm IMD3 71 W Typical OFDM Performance: VDS = 28V, IDQ = 750mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst, 20ms 3400 - 3600MHz. P OUT,AVG = 6W, TC = 25°C. Measured in Nitronex Test Fixture Symbol Parameter Typ Units GP Power Gain 12 dB h Drain Efficiency 18 % EVM Error Vector Magnitude 2.0 % Symbol Parameter Min Typ Max Units P3dB Average Output Power at 3dB Compression - 65 - W GSS Small Signal Gain 11 12.5 13.5 dB h Drain Efficiency at 3dB Compression 40 45 - % Y Output Mismatch Stress, VSWR = 10:1, all phase angles at 3500MHz) No Performance Degradation After Test

FEATURES

  • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz
  • 90W P3dB PEP power
  • 65W P3dB CW power
  • 6W linear power @ 2.0% EVM for single carrier OFDM, 10.3dB peak/avg, 3.5MHz channel bandwidth, 12dB gain, 18% efficiency
  • Qualified for operation up to 32V
  • 100% RF tested
  • Thermally enhanced industry standard package
  • High reliability gold metallization process
  • Lead-free and RoHS compliant
  • Subject to 3A001b.3.a Export Control

NDS-003 Rev.3, April 2013NPT35050A Page 2 Symbol Parameter Min Typ Max Units Off Characteristics VBDS Drain-Source Breakdown Voltage (VGS=-8V, IDQ=36mA) 100 - - V IDLK Drain-Source Leakage Current (VGS=-8V, VDS=60V) - - 18 mA On Characteristics VT Gate Threshold Voltage (VDS = 28V, IDQ = 36mA) -2.3 -1.8 -1.3 V VGSQ Gate Quiescent Voltage (VDS = 28V, IDQ = 750mA) -2.0 -1.5 -1.0 V RON On Resistance (VGS = 2V, IDQ = 270mA) - 0.13 0.15 W ID Drain Current (VDS = 7V pulsed, 300ms pulse width, 0.2% duty cycle, VGS=2V) - 19.5 - A DC Specifications: TC=25°C Absolute Maximum Ratings: Not simultaneous, TC=25°C unless otherwise noted Symbol Parameter Max Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage -10 to 3 V PT Total Device Power Dissipation (Derated above 25°C) 90 W qJC Thermal Resistance (Junction-to-Case) 1.95 °C/W TSTG Storage Temperature Range -65 to 150 °C TJ Operating Junction Temperature 200 °C HBM Human Body Model ESD Rating (per JESD22-A114) 1C (>1000V) MM Machine Model ESD Rating (per JESD22-A115) M3 (>200V)

NDS-003 Rev.3, April 2013NPT35050A Page 3 Table 1: Optimum Impedance Characteristics for OFDM Tuning (V DS=28V, IDQ=750 mA). ZS is the source impedance presented to the device. ZL is the load impedance presented to the device. Frequency (MHz) ZS (W) ZL (W) 3300 5.0 + j1.5 5.5 - j11.0 3400 5.2 + j1.2 6.4 - j12.3 3500 6.0 + j0.5 8.9 - j14.9 3600 6.4 - j0.2 11.6 - j17.2 3700 8.2 - j2.1 14.0 - j20.1 3800 10.0 - j4.0 16.3 - j22.6 Figure 1 - Optimal Impedances for OFDM Performance - VDS = 28V, IDQ = 750mA

NDS-003 Rev.3, April 2013NPT35050A Page 4 Figure 2 - Typical OFDM Performance in Nitronex Demonstration Board Figure 3 - ETSI Mask Compliance in Nitronex Demonstration Board, 3500MHz and POUT = 6W Figure 4 - Typical OFDM Performance in Load-Pull System, POUT = 6W Figure 5 - Typical OFDM Performance at 3500MHz versus IDQ -10 -20 -30 -40 -50 -60 -70 -80 -90 3489.50 Mhz 1.75 MHz/div 351 0.50 MHz Marker 1 -25.09 dBm

3.5 GHz

NDS-003 Rev.3, April 2013NPT35050A Page 7 NPT35050 - WN2 Nitronex 8/16/2006 NPT3 5 050A 035 274R G041 2 V GATE V DRAIN RF OUTRF IN Figure 14 - APP-NPT35050A-35 Demonstration Board

NDS-003 Rev.3, April 2013NPT35050A Page 8 W=68mil L=720mil C14 W=175mil L=50mil W=680mil L=450mil C12 W=550mil L=210mil C13 W=140mil L=245mil C15 W=140mil L=205mil W=68mil L=50mil W=68mil L=440mil W=68mil L=390mil W=100mil L=500mil W=100mil L=500mil C11 C17 C6 C7 C8 C3 C4 C5 C10 C16 IC1 P1V GATE V DRAIN RF OUTRF IN Figure 15 - APP-NPT35050A-35 Demonstration Board Equivalent Circuit Component Value ID C1, C2, C3 10 uF 16V Ceramic X7R (1210) C4, C7 0.01 uF 100V Ceramic X7R (1206) C5, C8 0.10 uF 100V Ceramic X7R (1206) C6, C9 1.0 uF 100V CeramicX7R (1812) C10, C11, C12, C13 5.6 pF ATC600F5R6CT C14 1.0 pF ATC600F1R0AT C15 1.5 pF ATC600F1R5AT C16 150uF 16V, Aluminum Electrolytic - Nichicon (PW) C17 270uF 63V, Aluminum Electrolytic - UCC (LXY) R1 12k ohm 0603 R2 10 ohm 0805 R3 0.33 ohm 0805 P1 20k ohm Potentiometer - Bourns (3224 series) IC1 IC LT1964-BYP Substrate Taconic RF35 t=30mil, er=3.5, 1 oz. Cu Table 1: APP-NPT35050A-35 Demonstration Board Bill of Materials

NDS-003 Rev.3, April 2013NPT35050A Page 9 Ordering Information 1 Part Number Description NPT35050AB NPT35050A in AC780B-2 Metal-Ceramic Bolt-Down Package 1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com Figure 16 - AC780B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm])

NDS-003 Rev.3, April 2013NPT35050A Page 10 Nitronex, LLC

2305 Presidential Drive

Durham, NC 27703 USA +1.919.807.9100 (telephone) info@nitronex.com www.nitronex.com Additional Information This part is lead-free and is compliant with the RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). Important Notice Nitronex, LLC reserves the right to make corrections, modifications, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to Nitronex terms and conditions of sale supplied at the time of order acknowledgment. The latest information from Nitronex can be found either by calling Nitronex at 1-919-807-9100 or visiting our website at www.nitronex.com. Nitronex warrants performance of its packaged semiconductor or die to the specifications applicable at the time of sale in accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex deems necessary to support the warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. Nitronex assumes no liability for applications assistance or customer product design. Customers are responsible for their product and applications using Nitronex semiconductor products or services. To minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. Nitronex does not warrant or represent that any license, either express or implied, is granted under any Nitronex patent right, copyright, mask work right, or other Nitronex intellectual property right relating to any combination, machine or process in which Nitronex products or services are used. Reproduction of information in Nitronex data sheets is permitted if and only if said reproduction does not alter any of the information and is accompanied by all associated warranties, conditions, limitations and notices. Any alteration of the contained information invalidates all warranties and Nitronex is not responsible or liable for any such statements. Nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical implants into the body or any other application intended to support or sustain life. Should Buyer purchase or use Nitronex Corporation products for any such unintended or unauthorized application, Buyer shall indemnify and hold Nitronex Corporation, its of ficers, employees, subsidiaries, affiliates, distributors, and its successors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, notwithstanding if such claim alleges that Nitronex was negligent regarding the design or manufacture of said products. Nitronex and the Nitronex logo are registered trademarks of Nitronex, LLC. All other product or service names are the property of their respective owners. ©Nitronex, LLC 2012. All rights reserved.