NPT25015_15 MA-COM | Alldatasheet

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Technical content

NDS-004 Rev 4, April 2013 NPT25015 Page 1

FEATURES

  • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz
  • 23W P3dB peak envelope power (PEP)
  • 1.5W linear power @ 2% EVM for single carrier OFDM, 10.3dB peak/average, 3.5MHz channel bandwidth, 14dB gain, 23.5% efficiency, 2500-2700MHz
  • 100% RF tested
  • Thermally-enhanced industry standard package
  • High reliability gold metallization process
  • Lead-free and RoHS compliant
  • Subject to EAR99 export control DC - 3000 MHz

23 Watt, 28 Volt

Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology Typical 2-Tone Performance: VDS = 28V, IDQ = 200mA, Frequency = 2500MHz, Tone Spacing = 1.0MHz, T C = 25°C Measured in Nitronex Test Fixture Symbol Parameter Min Typ Max Units P3dB,PEP Peak Envelope Power at 3dB Compression 20 25 - W P1dB,PEP Peak Envelope Power at 1dB Compression - 15 - W GSS Small Signal Gain 13.0 14.0 15.0 dB h Drain Efficiency at 3dB Compression 53 58 - % Typical OFDM Performance: VDS = 28V, IDQ = 200mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst, continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF. Frequency = 2500 - 2700MHz. POUT,AVG = 1.5W, TC = 25°C. Measured in Load Pull System (Refer to Table 1 and Figure 1) Symbol Parameter Typ Units GP Power Gain 14.0 dB h Drain Efficiency 23.5 % EVM Error Vector Magnitude 2.0 %

NDS-004 Rev 4, April 2013 NPT25015 Page 2 Symbol Parameter Min Typ Max Units Off Characteristics VBDS Drain-Source Breakdown Voltage (VGS = -8V, ID = 8mA) 100 - - V IDLK Drain-Source Leakage Current (VGS = -8V, VDS = 60V) - - 4 mA On Characteristics VT Gate Threshold Voltage VGSQ Gate Quiescent Voltage RON On Resistance (VGS = 2V, ID = 60mA) - 0.45 0.50 W ID,MAX Drain Current (VDS = 7V pulsed, 300ms pulse width, 0.2% duty cycle) - 5.0 - A DC Specifications: TC = 25°C Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted Symbol Parameter Max Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage -10 to 3 V PT Total Device Power Dissipation (Derated above 25°C) 28 W qJC Thermal Resistance (Junction-to-Case) 6.25 °C/W TSTG Storage Temperature Range -65 to 150 °C TJ Operating Junction Temperature 200 °C HBM Human Body Model ESD Rating (per JESD22-A114) 1A (>250V) MM Machine Model ESD Rating (per JESD22-A115) M1 (>50V) MSL Moisture Sensitivity Level (Per IPC/JEDEC J-STD-20) @ 260°C Peak Package Temperature 3

NDS-004 Rev 4, April 2013 NPT25015 Page 3 Table 1: Optimum Impedance Characteristics for Linear OFDM Tuning, single carrier OFDM waveform 64-QAM 3/4, 8 burst, continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF ZS is the source impedance presented to the device. ZL is the load impedance presented to the device. Frequency (MHz) ZS (W) ZL (W) POUT (W) Gain (dB) Drain Efficiency (%) Figure 1 - Optimum Impedance Characteristics for OFDM Tuning, VDS = 28V, IDQ = 200mA Load-Pull Data, Reference Plane at Device Leads VDS=28V, IDQ=200mA, TA=25°C unless otherwise noted Table 2: Optimum Impedance Characteristics for CW P SAT, Efficiency, and Gain Frequency (MHz) ZS (W) ZL (W) PSAT (W) GSS (dB) Drain Efficiency (%)

NDS-004 Rev 4, April 2013 NPT25015 Page 5 Figure 6 - APP-NPT25015-25 Demonstration Board and Schematic RFIN RFOUT VGS VDS APP-NPT25015-25, 2500-2700MHz Linear WiMAX Application Board 802.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, 20ms frame 75% filled, 10MHz channel bandwidth, PAR=10.3dB @ 0.01% CCDF Detailed design information and data available at www.nitronex.com Name Value Tolerance Vendor Vendor Number C1 5.6pF +/- 0.1pF ATC ATC600F5R6B C2 2.2pF +/- 0.1pF ATC ATC600F2R2B C3 3.3pF +/- 0.1pF ATC ATC600F3R3B C4, C9 1.0uF 10% Panasonic ECJ-5YB2A105M C5, C8 0.1uF 10% Kemet C1206C104K1RACTU C6, C7 0.01uF 10% AVX 12061C103KAT2A C10 150uF 20% Nichicon UPW1C151MED C11 270uF 20% United Chemi-Con ELXY630ELL271MK25S C12 1.0pF +/- 0.1pF ATC ATC600F1R0B C13, C15 33pF 5% ATC ATC600F330B C14, C16 1000pF 10% Kemet C0805C102K1RACTU PA1 -- -- -- NPT25015D R1 49.9 ohm 1% Panasonic ERJ-2RKF49R9X R3 0.33 ohm 1% Panasonic ERJ-6RQFR33V -- -- -- -- Coin to mount PA1 Substrate Rogers R04350, t = 30mil er = 3.5 Table 2: APP-NPT25015-25 Demonstration Board Bill of Materials

NDS-004 Rev 4, April 2013 NPT25015 Page 8 Nitronex, LLC

2305 Presidential Drive

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