NPT1015B MA-COM | Alldatasheet
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Technical content
Features
GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 3.5 GHz 28 V Operation 12 dB Gain @ 2.5 GHz 54 % Drain Efficiency @ 2.5 GHz 100 % RF Tested Standard metal ceramic package with bolt down flange RoHS* Compliant
Description
The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm) in an industry standard metal -ceramic package with bolt down flange. The NPT1015 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar. Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology. Pin Configuration Functional Schematic Pin No. Pin Name Function
1 RFIN / VG RF Input / Gate
2 RFOUT / VD RF Output / Drain
3 Flange1 Ground / Source
- The Flange must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. RFOUT / VDRFIN / VG Flange 1 2
GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 NPT1015B 2 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 2.5 GHz GSS - 13.5 - dB Saturated Output Power CW, 2.5 GHz PSAT - 47.3 - dBm Drain Efficiency at Saturation CW, 2.5 GHz SAT - 57 - % Power Gain 2.5 GHz, POUT = 45 W GP 10.5 12 - dB Drain Efficiency 2.5 GHz, POUT = 45 W 47 54 - % Ruggedness: Output Mismatch All phase angles VSWR = 15:1, No Device Damage Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 100 V IDLK - - 16 mA Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - - 8 mA Gate Threshold Voltage VDS = 28 V, ID = 16 mA VT -2.3 -1.5 -0.7 V Gate Quiescent Voltage VDS = 28 V, ID = 400 mA VGSQ -2.1 -1.2 -0.5 V On Resistance VDS = 2 V, ID = 120 mA RON - 0.22 - Maximum Drain Current VDS = 7 V pulsed, pulse width 300 µs ID,MAX - 9.2 - A
GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 NPT1015B 3 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Absolute Maximum Ratings2,3,4 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. MACOM does not recommend sustained operation near these survivability limits. 4. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours. Parameter Absolute Maximum Drain Source Voltage, VDS 100 V Gate Source Voltage, VGS -10 to 3 V Gate Current, IG 32 mA Junction Temperature, TJ +200°C Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 5. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple embedded in heat-sink. Parameter Test Conditions Symbol Typical Units Thermal Resistance VDS = 28 V, TJ = 180°C RJC 2.1 °C/W Thermal Characteristics5 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1B devices.
GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 NPT1015B 4 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Frequency (MHz) ZS () ZL () PSAT (W) GSS (dB) Drain Efficiency @ PSAT (%) Load-Pull Performance: VDS = 28 V, IDQ = 400 mA, TC = 25°C Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance Gain vs. Output Power Drain Efficiency vs. Output Power Impedance Reference ZS and ZL vs. Frequency ZS ZL 25 30 35 40 45 50 900MHz 2200MHz 2500MHz 3500MHz Gain (dB) POUT (dBm) 25 30 35 40 45 50 900MHz 2200MHz 2500MHz 3500MHz Drain Efficiency (%) POUT (dBm)
GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 NPT1015B 5 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Parts measured on evaluation board (20 -mil thick RO4350). Matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. Recommended tuning solution component placement, transmission lines, and details are shown on the next page. Evaluation Board and Recommended Tuning Solution
2.5 GHz Narrowband Circuit
- Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (28 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. Bias Sequencing 19.4 nH 15 C13 10 pF RFIN 1000 pF 0.01 mF 0.1 mF 1.0 mF VGS VDS C15 0.6 pF C14 10 pF RFOUT 10 pF NPT1015 1.0 mF 0.1 mF 0.01 mF 1000pF C12 2.2 pF C11 2.4 pF C10 20 pF
GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 NPT1015B 6 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Reference Value Tolerance Manufacturer Part Number C1, C5 1.0 µF 10% AVX 12101C105KAT2A C2, C6 0.1 µF 10% Kemet C1206C104K1RACTU C3, C7 0.01 µF 10% AVX 1206C103KAT2A C4, C8 1000 pF 10% Kemet C0805C102K1RACTU C9, C14 10 pF 0.1 pF ATC ATC800B100B C10 20 pF 0.1 pF ATC ATC800B200B C11 2.4 pF 0.1 pF ATC ATC600F2R4B C12 2.2 pF 0.1 pF ATC ATC600F2R2B C13 10 pF 0.1 pF ATC ATC600F100B C15 0.6 pF 0.1 pF ATC ATC600F0R6B L1 19.4 nH 5% CoilCraft 0806SQ-19NJL R1 15 Ω 1% Panasonic ERJ-2RKF15R0X PCB Rogers RO4350, r = 3.5, 0.020” Parts list Evaluation Board and Recommended Tuning Solution
GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 NPT1015B 7 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Typical performance as measured in the 2.5 GHz evaluation board: CW, VDS = 28 V, IDQ = 400 mA (unless noted) Gain vs. Output Power over Temperature Drain Efficiency vs. Output Power over Temperature Quiescent VGS vs. Temperature 25 30 35 40 45 50 +25°C -40°C +85°C Drain Efficiency (%) POUT (dBm) -1.6 -1.5 -1.4 -1.3 -1.2 -1.1 -50 -25 0 25 50 75 100 200mA 400mA 600mA VGSQ (V) Temperature (oC) 25 30 35 40 45 50 +25°C -40°C +85°C Gain (dB) POUT (dBm)
GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 NPT1015B 8 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 2-Tone IMD vs. Output Power 2-Tone IMD3 vs. Output Power vs. Quiescent Current 2-Tone Gain vs. Output Power vs. Quiescent Current Typical 2-Tone Performance as measured in the 2.5 GHz evaluation board:
1 MHz Tone Spacing, VDS = 28 V, IDQ = 400 mA, TC = 25°C (unless noted)
-50 -45 -40 -35 -30 -25 -20 -15 0.1 1 10 100 200mA 300mA 400mA 600mA 800mA IMD (dBc) POUT (W-PEP) 12.0 12.5 13.0 13.5 14.0 14.5 15.0 0.1 1 10 100 200mA 300mA 400mA 600mA 800mA Gain (dB) POUT (W-PEP) -55 -50 -45 -40 -35 -30 -25 -20 0.1 1 10 100 -IMD3 +IMD3 -IMD5 +IMD5 -IMD7 +IMD7 IMD (dBc) POUT (W-PEP)
GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 NPT1015B 9 9 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Evaluation Board and Recommended Tuning Solution 600 - 1000 MHz Broadband Circuit Reference Value Tolerance Manufacturer Part Number C1 150 µF 20% Nichicon UPW1C151MED C2, C5 0.01 µF 10% AVX 1206C103KAT2A C3, C6 0.1 µF 10% Kemet C1206C104K1RACTU C4, C7 1.0 µF 10% AVX 12101C105KAT2A C8 270 µF 20% United Chemi-Con ELXY 630ELL271MK25S C9 56 pF 5% ATC ATC100B560J C10, C12 100 pF 5% ATC ATC100B101J C11 6.8 pF 5% ATC ATC100B6R8J R1, R2 0.33 Ω 1% Panasonic ERJ-6RQFR33V R3 10 Ω 1% Panasonic ERJ-6ENF10R0V R4, R5 7.5 Ω 1% Stackpole RHC2512FT7R50 L1 120 nH 5% Coilcraft 0805CS-121XJB L2 ~50 nH - 16 AWG Cu Wire 5 turn, 0.2"ID PCB Rogers LM6010, r = 10.2, 0.025” Parts list
GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 NPT1015B 10 10 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Evaluation Board and Recommended Tuning Solution 600 - 1000 MHz Broadband Circuit Performance vs. Frequency at POUT = PSAT Performance vs. Frequency at POUT = 45 dBm Performance vs. Output Power (f = 700 MHz) Small Signal s-parameters vs. Frequency 600 700 800 900 1,000 Gain Drain Eff Psat Gain (dB) PSAT (dBm), Drain Efficiency (%) Frequency (MHz) 600 700 800 900 1,000 Gain Drain Eff Gain (dB) Drain Efficiency (%) Frequency (MHz) 25 30 35 40 45 50 Gain Drain Eff Gain (dB) Drain Efficiency (%) POUT (dBm) 10 C10 10 pF RFIN 56 pF VG VD C12 100 pF RFOUT NPT1015 8.0 nH 120 nH 7.5 7.5 C11 6.8 pF 1.0 mF 0.1 mF 0.01 mF 270 mFR2 0.33 1.0 mF 0.1 mF 0.01 mF 150 mF R1 0.33 -30 -25 -20 -15 -10 500 600 700 800 900 1,000 s21 s11 s22 s21 (dB) s11, s22 (dB) Frequency (MHz)
GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 NPT1015B 11 11 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support AC360B-2 Metal Ceramic Package † † Plating is Ni / Au. All dimensions shown as inches [millimeters].
GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 NPT1015B 12 12 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A -COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale.