NPT1012B

MAGE-100809-600 MA-COM | Alldatasheet

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GaN2016 brochure_singles_052316_Layout 1 5/24/16 8:29 AM Page 1

N ext generation high pow er RF sem iconductor technology Powe r E fficiency “> 2G Hz” Power Density Easy Matching Supply Chain Cost Linearity LDMO S MAC OM GaN on Silicon Be nefi ts >10% Improveme nt 4-6 W/mm easy 6"and 8" Silicon DPD friendly Lower Operating Costs, Simpler Cooling Smaller Footprint and Lower Costs Time-to-Market and Smaller Footprint Capacity and Surge Capability Competitive Bill of Materials Competitive Bill of Materials 1-1.5 W/mm difficult Silicon DPD friendly Support all ISM Brands Can be used at >2.45 GHz Broader Choice for Your Applications Limited to 2.45 GHz MACOM continues to develop industry-leading gallium nitride (GaN) RF power products. Our product portfolio leverages MACOM’s more than 60-year heritage of providing best-in-class standard, application specific and custom solutions for our radar, EW, ISM, and communications customers. As a member of the RF Energy Alliance, MACOM brings GaN technology into mainstream a pplications such as RF ignition systems, solid-state cooking, and high-lumen plasma lighting. MACOM GaN products are offered as unmatched transistors, internally matched power transistors, and fully matched power pallets and modules. Using high performance GaN HEMT processes and leveraging our proprietary die layout and assembly techniques, these products exhibit robust thermal properties and excellent RF performance with respect to power, gain, gain-flatness, efficiency, and ruggedness for applications up to 6 GHz. MACOM’s industry-leading portfolio of cost-effective RF power products uses our unique GaN on Silicon technology to deliver the cost, bandwidth, power density, and efficiency advantages of GaN in a variety of form factor s— including 2 W to 600 W P1db CW power transistors in ceramic and overmolded plastic DFN and TO-272 packages, as well as HF through S-band modules and 50 Ω matched pallets. Our GaN on Silicon transistors and amplifiers improve upon the high power and efficiency performance of LDMOS while at the at the same time providing the high frequency performance of GaAs. Only MACOM delivers GaN performance at silicon cost structures to drive adoption. W hy choose G aN ? GaN advantages include: > High breakdown voltage > Multi-octave bandwidth > Superior power density > High frequency operation > High RF gain and efficiency > Excellent thermal conductivity > GaN performance at silicon cost structures For over 45 years, MACOM engineers have been redefining RF power and are now applying their GaN expertise to an array of commercial, industrial, scientific, medical and wireless applications. Turn to MACOM for superior performance, high power GaN solutions. GaN2016 brochure_singles_052316_Layout 1 5/24/16 8:29 AM Page 2

M ACO M G aN enables RF Energy applications w ith exceptional efficiency and gain Features and Benefits MACOM GaN delivers cost, bandwidth, power density, and efficiency advantages in an array of form factors: > Higher efficiency and reliability > Higher linearity > Increased precision and control > Excellent gain, low power, and lower cost structure > Power levels from 2–1000 W > Frequencies from 890 MHz to 2.45 GHz > Packages from QFN to TO-272 to ceramic D escription Radio frequency (RF) energy applications use controlled electromagnetic radiation to heat items or to power all kinds of processes. Today, magnetron tubes commonly generate this energy. Tomorrow, it will be generated by an all solid-state semiconductor chain. Solid-state RF energy offers numerous benefits unavailable via alternate solutions: low-voltage drive, semiconductor-type reliability, smaller form factor, and an “all-solid-state electronics” footprint. Perhaps its most compelling attributes are fast frequency, phase- and power-agility complemented by hyper-precision. Collectively, the technology’s attributes yield an unprecedented process control range, even energy distribution, and fast adaption to changing load conditions. Ideal for applications including: automotive ignition, industrial cooking, industrial drying, medical ablation, plasma street lighting. Block D iagram HPA I-D AC Q-D AC HPA I-D AC Q-D AC SWITCH AMPLIFIER MIXER I/Q MODULA TOR OSCILLA TOR VGA COUPL ER COOKING CA VITY SWITCH AMPLIFIER VGA MIXER I/Q MODULA TOR OSCILLA TOR RF SYNTHE SIS COUPL ER RF SYNTHE SIS High Pow er Am plifiers M AG e-100809-600* M AG e-100809-1K0* M AG e-100825-002* M AG e-100825-005* M AG e-100825-010* M AG e-102425-015* M AG e-102425-030* M AG e-102425-050* M AG e-102425-100* M AG e-102425-300* *In developm ent High Pow er Am plifiers M AG e- 100809-600* M AG e-100809-1K0* M AG e-100825-002* M AG e-100825-005* M AG e-100825-010* M AG e-102425-015* M AG e-102425-030* M AG e-102425-050* M AG e-102425-100* M AG e-102425-300* *In developm ent In developm ent In developm ent In developm ent RF Energy Cooking System GaN2016 brochure_singles_052316_Layout 1 5/24/16 8:29 AM Page 3

M ACO M G aN transform s the netw ork w ith ease of use and cost effectiveness Features and Benefits > Optimized to meet the most demanding bandwidth, performance, and efficiency needs > Multi-band system: single radio supporting > 100 MHz of bandwidth > High frequency: enables 1.8 GHz to 6 GHz > Compact and lightweight: higher power density with smaller package, higher efficiency with smaller heat sink > Easy to linearize and correct with standard digital pre-distortion (DPD) systems > CapEx savings: smaller PCBs, lower heat sink cost, single GaN device replaces multiple LDMOS devices > OpEx Savings: high efficiency reduces utility bill > Massive MIMO pre-5G sets new standard for integration with high efficiency and high power density > Faster time to market: simpler devices lead to shorter development times, broadband means fewer PAs to deal with when covering all bands, excellent applications support D escription MACOM's new MA Gb series is the industry's first commercial basestation-optimized family of GaN transistors to achieve leadership efficiency, bandwidth and power gain with the linearity and cost structure like LDMOS, with a path to better than LDMOS cost. Leveraging MACOM's Gen4 GaN technology, this new series enables wireless carriers to deploy the latest LTE releases and significantly reduce operating expenses at highly competitive price points, with robust and scalable CMOS-like supply chain combined with MACOM’s best in class applications and design support team with decades of experience. Block D iagram HIGH ISOLATION SWITCH SP2T, SP4T, SP5T DSA PRE- DRIVER ADC ADC ADC ADC ADC ADC CPRI INTERFACE BASE BAND DPD DRIVER POWER AMPLIFIERS GaN GaN TDD CIRCULATOR Tx Rx DSA LNA LNA HIGH POWER SWITCH (TDD ONLY) W ireless A ccess TD D Low N oise Am plifier M AAL-011078 M AAL-011134 High Isolation Sw itch M AAL-011078 M AAL-011134 Low N oise Am plifier M AAL-010704 Digital Attenuator M AATSS0015 M AATSS0017 M AAD-000523 Pre-Driver M AAM -009286 M AAM -009560 G aN Pow er Am plifiers Request inform ation GaN2016 brochure_singles_052316_Layout 1 5/24/16 8:29 AM Page 4

ISM , Com m unications & Instrum entation M ACO M — the first choice for G aN in com m unications, m ulti-m arket and ISM applications Features and Benefits > Broadband, unmatched transistors can be used for a variety of applications including communications, instrumentation and industrial, scientific and medical (ISM) > Very rugged: allows GaN transistors to withstand high VSWR mismatches during power on/start up and during operation without damaging the transistor > High voltage: reduces bias current load on power supply allowing for reduced cost power supplies > Excellent thermal performance: allows reduced heat sink costs for easier PCB designs > High RF gain and efficiency > MTTF of 100 year+ (channel temperature <200°C) > Non-magnetic parts available > EAR99 export classification D escription As gallium nitride grows from its initial role in military and radar applications to expand into commercial markets, MACOM is uniquely positioned to enable those demanding applications. Leveraging our GaN experience and supply chain, MACOM satisfies many of the commercial requirements that have limited GaN penetration in broader markets. Packaging choices range from ceramic flanged and earless, to discrete plastic, including plastic laminate modules that enable traditional SMT PCB production techniques. The portfolio of 5-300 W devices allows customers a wide set of options to build line-ups for their ISM applications. Block D iagram M RI LN A FILTER ADC FILTER ADC LN A AM P FRE QUENC Y SYNTHES IZER AM P DAC DAC TIMING AND WAVEFORM GENERATION PROCESSORS AND DISPLAY CONTROLS TRANSMIT/ RECEIVE COIL RECEIVE COIL TRANSMIT COIL RF AMPLIFIER RF AMPLIFIER DAC GRADIENT TIMING AND CONTROL X, Y, Z GRADIENT COILS GRADIENT AMPLIFIER x3 FFFFF IIII LLLLL T R TER TER TER TER R FFFFF IIII LLLLL T R TER TER TER TER FRE FRE FRE FRE FRE R QQQQQQQ UEN UEN UEN UEN UEN N N CCCCC YYYYY SYN SYN SYN SYN SYN N N THE THE THE THE THE SSSSS IIIII ZER ZER ZER ZER ZER R R PRO CES SOR S AND DIS PLA Y CON TRO LS PL REC REC REC REC REC REC REC RE E V EIV EIV EIV EIV E V E V E V EEEEEE COI COI COI COI COI COI COI COI LLLLLLLL TRA TRA TRA TRA TRA RA A SNSM NSM NSM NSM N M N M T IT IT IT T COI COI COI COI COI LLLLL FILTER ADC FILTER ADC FRE QUENC Y SYNTHES IZER DAC DAC TIMING AND WAVEFORM GENERATION PROCESSORS AND DISPLAY CONTROLS TRANSMIT/ RECEIVE COIL RECEIVE COIL TRANSMIT COIL DAC GRADIENT TIMING AND CONTROL X, Y, Z GRADIENT COILS Low N oise Am plifiers M AAL-009120 M AAL-010200 RF Am plifiers N PT2010 N PT2018 N PT2020 N PT2021 N PT2022 M RF137 M RF141 M RF148A M RF150 M RF151 M RF151G M RF154 M RF157 DU 28120T DU 28120V DU 28200M DU 2840S DU 2860T DU 2860U DU 2880T DU 2880U Transm it Coil M A4PK2000 M A4PK2001 M A4PK2002 M A4PK2003 M A4PK2004 M A4PK3000 M A4PK3001 M A4PK3002 M A4PK3003 M A4PK3004 M A4P709-150 Receive Coil M A44781 M ADP-011048 Transm it Receive Coil M A4P7446F-1091T M A4P7452F-1072T M A4P7461F-1072T M A4P7474F-1072T M A4P7470F-1072T M ADP-000235-10720T M A4P1200N M -401T M A4P1250N M -1072T M A4P7435N M -1091T M A4P7441F-1091T M ADP-000504-10720T M ADP-011034-10720T Driver Am plifiers M AAM -009116 XF1001-SC GaN2016 brochure_singles_052316_Layout 1 5/24/16 8:29 AM Page 5

200 W Sw itch

M ACO M ’s G aN solutions offer custom ers the flexibility in designing system s to fit their unique requirem ents Features and Benefits > MACOM’s rich heritage in supporting MILCOM radios for the last 50-60 years is still going strong > Extensive portfolio of RF Power Products enable the right system choices > Proven track record of high quality and reliability > Wideband products enable new multifunction system capability requiring complex waveforms and efficient, economical designs > Small size, easy to match products enable fast time-to-market > High gain and 50 V operation provide efficient operation and significantly reduce size of matching networks > MACOM GaN is mature technology, inexpensive, leverages readily available Si process services, and delivers consistent quality > Proven track record in non-obsolescence of the legacy Power MOSFET for the last 30-40 years, helping customers to support the A&D market D escription MACOM’s GaN portfolio of plastic power transistors afford MILCOM system designers the most cost effective solutions across a growing range of frequency bands while not compromising performance. Supporting voltage operation at 50 V with high gain to reduce input power requirements, the transistors maximize power and cooling efficiency and provide robust performance. Engineered using leading edge power transistor packaging techniques and innovative semiconductor designs, MACOM’s high power transistor products provide optimal operation for CW and pulsed applications. Block D iagram GaN2016 brochure_singles_052316_Layout 1 5/24/16 8:30 AM Page 6

RF Pow er Products: G aN N PA 1006 20 1000 28 12.5 14 >45 900 6 x 5 m m D FN -8 N PT2022 1 2000 50 100 20 >60 900 TO -272 N PT2021 1 2500 50 4 17 >55 2500 TO -272 N PA 1007 30 2500 28 10 14 >50 2000 6 x 5 m m D FN -8 N PA 1008 20 2700 28 5 12 >45 1900 4 x 4 m m PQ FN -24 N PT2024 1 2700 50 200 22 65 900 TO -272-4 N PT1012B 1 4000 28 25 13 >50 3000 A C360B-2 N PTB00025A B 1 4000 28 25 13 >50 3000 A C360B-2 N PTB00025B 1 4000 28 25 13 >50 3000 A C360B-2 M A G x-011086 1 6000 28 4 9 >50 5800 4 x 4 m m Q FN -24 N PT2018 1 6000 50 12.5 17.5 >50 2500 6 x 3 m m PD FN -14 N PTB00004A 1 6000 28 5 17 >50 2500 SO IC-8N E N PTB00004D 1 6000 28 5 17 >50 2500 SO IC-8N E M A G x-100027-050 * 1 2700 50 50 17 65 2700 TO -272S-2 M A G x-100027-100 * 1 2700 50 100 17 65 2700 TO -272S-2 M A G x-100027-300 * 1 2700 50 300 16 63 2700 TO -272S-4 *In developm ent O perating O utput Pow er Part M in Freq M ax Freq Voltage Psat G ain Efficiency Test Freq N um ber (M Hz) (M Hz) (V) (W ) (dB) (%) (M Hz) Package M ultipurpose / RF Pow er Transistors G aN on Si: CW and Pulsed M A G e-100809-600 * 896 928 50 600 21 73 915 P-282 M A G e-100809-1K0 * 896 928 50 1000 20 72 915 P-283 M A G e-100825-002 * 896 2500 50 2 19.5 73 2450 6 x 3 m m D FN -14 M A G e-100825-005 * 896 2500 50 5 19.5 73 2450 6 x 3 m m D FN -14 M A G e-100825-010 * 896 2500 50 10 19.5 73 2450 7 x 7 m m PQ FN -20 M A G e-102425-015 * 2400 2500 50 15 18.5 73 2450 7 x 7 m m PQ FN -20 M A G e-102425-030 * 2400 2500 50 30 18.5 73 2450 7 x 7 m m PQ FN -20 M A G e-102425-050 * 2400 2500 50 50 17.5 72 2450 TO -272S-2 M A G e-102425-100 * 2400 2500 50 100 17.5 72 2450 TO -272S-2 M A G e-102425-300 * 2400 2500 50 300 16.5 70 2450 TO -272S-4 *In developm ent O perating O utput Pow er Part M in Freq M ax Freq Voltage Psat G ain Efficiency Test Freq N um ber (M Hz) (M Hz) (V) (W ) (dB) (%) (M Hz) Package RF Energy / RF Pow er Transistors G aN on Si: CW M A BC-001000-D P000L 50 14 -6 -3 -8 to 0 50 3.3 SM J2307 M A BC-001000-D PS00L 50 14 -6 -3 -8 to 0 50 3.3 SM J2307 Positive Positive N egative N egative O utput G ate O utput Pulse Enable Part Supply Supply Current Supply Supply Current Voltage G ate Current TTL Voltage N um ber Voltage (V) (m A ) Voltage (V) (m A ) (V) (m A ) (V) Package G aN and G aA s D evice Bias Sequencer GaN2016 brochure_singles_052316_Layout 1 5/24/16 8:30 AM Page 7

Package Type: C eram ic A ir C avity G aN Package G uide TO -272-2 TO -272-4 TO -272S-2 TO -272S-2B TO -272S-4 Package Type: Plastic Packages SO IC-EP 3 x 6 m m PD FN -14LD 4 m m PQ FN -24LD 5 x 6 m m PD FN -8LD 7 m m PQ FN -20LD SO T89-3LD GaN2016 brochure_singles_052316_Layout 1 5/24/16 8:30 AM Page 8

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