NPT1007_15 MA-COM | Alldatasheet

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Technical content

NDS-012 Rev. 3, April 2013 NPT1007 Page 1

FEATURES

  • Optimized for narrowband and broadband applications from from DC – 1200MHz
  • 200W P3dB CW power at 900MHz in quadrature combined or push-pull configuration
  • 90W CW power from 500-1000MHz in application design AD-014
  • High efficiency from 14V to 28V
  • 1.0 °C/W R TH with maximum TJ rating of 200°C
  • Robust up to 10:1 VSWR mismatch at all angles with no device degradation
  • Subject to EAR99 export control DC – 1200 MHz 14 – 28 Volt GaN HEMT RF Specifications (CW): VDS = 28V, IDQ = 1400mA1, Frequency = 900MHz, TA = 25°C, Measured in Nitronex Quadrature Combined Test Fixture2. Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology Typical 2-Tone Performance: VDS = 28V, IDQ = 1400mA1, Frequency = 900MHz, Tone spacing = 1MHz, TA = 25°C Measured in Nitronex Quadrature Combined Test Fixture 2 . Symbol Parameter Typ Units P3dB,PEP Peak Envelope Power at 3dB Gain Compression 53.4 dBm P1dB,PEP Peak Envelope Power at 1dB Gain Compression 52.6 dBm PIMD3 Peak Envelope Power at -35dBc IMD3 50.8 dBm Symbol Parameter Min Typ Max Units P3dB Average Output Power at 3dB Gain Compression 52.0 53.0 - dBm GSS Small Signal Gain 17.3 18.3 - dB h Drain Efficiency at 3dB Gain Compression 21 57 63 - % VSWR 10:1 VSWR at all phase angles No change in device performance Note 1: 700mA per transistor. Each gate should be biased independently to set desired IDQ. Note 2: Includes ~ 0.2 dB quadrature combiner loss. Note 1: 700mA per transistor. Each gate should be biased independently to set desired IDQ. Note 2: Includes ~ 0.2 dB quadrature combiner loss.

NDS-012 Rev. 3, April 2013 NPT1007 Page 2 Absolute Maximum Ratings: Not Simultaneous, Per Transistor, TA = 25°C Unless Otherwise Noted Symbol Parameter Min Typ Max Units Off Characteristics VBDS Drain-Source Breakdown Voltage (VGS = -8V, ID = 36mA) 100 - - V IDLK Drain-Source Leakage Current GS = -8V, VDS = 60V) - 9 18 mA On Characteristics VT Gate Threshold Voltage VGSQ Gate Quiescent Voltage RON On Resistance GS = 2V, ID = 270mA) - 0.13 0.14 W ID,MAX Drain Current (VDS = 7V pulsed, 300 ms pulse width, 0.2% duty cycle) 19.0 20.5 - A Symbol Parameter Max Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage -10 to 3 V IG Gate Current 180 mA PT Total Device Power Dissipation (Derated above 25°C), both transistors on 175 W qJC Thermal Resistance (Junction-to-Case), composite for both transistors on, T J = 180°C 1.0 °C/W Thermal Resistance (Junction-to-Case), one transistor on, one off, T J = 180°C 1.8 TSTG Storage Temperature Range -65 to 150 °C TJ Operating Junction Temperature 200 °C HBM Human Body Model ESD Rating (per JESD22-A114) 1C (>1000V) MM Machine Model ESD Rating (per JESD22-A115) A (>100V) CDM Charge Device Model ESD Rating (per JESD22-C101) IV (>4000V) DC Specifications: Per Transistor, TA = 25°C

NDS-012 Rev. 3, April 2013 NPT1007 Page 6 Figure 13 - AC780B-4 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm]) Ordering Information 1 Part Number Description NPT1007B NPT1007 in AC780B-4 Metal-Ceramic Bolt-Down Package 1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com

NDS-012 Rev. 3, April 2013 NPT1007 Page 7 Nitronex, LLC

2305 Presidential Drive

Durham, NC 27703 USA +1.919.807.9100 (telephone) info@nitronex.com www.nitronex.com Additional Information This part is lead-free and is compliant with the RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). Important Notice Nitronex, LLC reserves the right to make corrections, modifications, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to Nitronex terms and conditions of sale supplied at the time of order acknowledgment. The latest information from Nitronex can be found either by calling Nitronex at 1-919-807-9100 or visiting our website at www.nitronex.com. Nitronex warrants performance of its packaged semiconductor or die to the specifications applicable at the time of sale in accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex deems necessary to support the warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. Nitronex assumes no liability for applications assistance or customer product design. Customers are responsible for their product and applications using Nitronex semiconductor products or services. To minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. Nitronex does not warrant or represent that any license, either express or implied, is granted under any Nitronex patent right, copyright, mask work right, or other Nitronex intellectual property right relating to any combination, machine or process in which Nitronex products or services are used. Reproduction of information in Nitronex data sheets is permitted if and only if said reproduction does not alter any of the information and is accompanied by all associated warranties, conditions, limitations and notices. Any alteration of the contained information invalidates all warranties and Nitronex is not responsible or liable for any such statements. Nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical implants into the body or any other application intended to support or sustain life. Should Buyer purchase or use Nitronex, LLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold Nitronex, LLC, its officers, employees, subsidiaries, affiliates, distributors, and its successors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, notwithstanding if such claim alleges that Nitronex was negligent regarding the design or manufacture of said products. Nitronex and the Nitronex logo are registered trademarks of Nitronex, LLC. All other product or service names are the property of their respective owners. ©Nitronex, LLC 2012. All rights reserved.