NPS35 NAINA | Alldatasheet
Document overview
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Technical content
Features
- Improved glass passivation for high reliability
- Exceptional stability at high temperatures
- Metric thread type available
- Low thermal resistance Electrical Characteristics (T A = 25 0C unless otherwise specified) Parameter Symbol Part Numbers Units Maximum repetitive peak reverse voltage, V RRM
50 NPS350
V
100 NPS351
200 NPS352
400 NPS354
600 NPS356
RMS on-state current I T(RMS) 35 A Non-repetitive peak surge on-state current, one cycle I TSM 350 A Peak gate trigger current I GTM 2 A Peak gate power dissipation @ I GT ≤ I GTM P GM 20 W Average gate power dissipation P G(AV) 0.5 W Peak off-state current I DRM & IRRM 1.0 mA Maximum instantaneous forward voltage drop V TM 1.6 V DC holding current IH 50 mA Critical rate-of-rise of off-state voltage dv/dt 20 0 V/µsec DC gate trigger current I GT 25 mA DC gate trigger voltage V GT 2.0 V Gate controlled turn-on time Tgt 2.5 µsec Thermal and Mechanical Specifications (T A = 25 oC, unless otherwise noted) Parameters Symbol Values Units Maximum operating junction temperature range T J - 40 to +110 oC Maximum storage temperature range TStg - 40 to +150 oC Maximum thermal resistance, junction to case R θ(J-C) 0.9 oC/W Approximate weight W 15 g TO -203 /F
Naina Semiconductor Ltd. NPS35
2 D-95, Sector 63, Noida – 201301, India • Tel: 012 0-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com Package Outline (All dimensions in mm) Ordering Table NPS 35 0,1,2,4,6 1 2 3 1 – Press Fit SCR 2 – Current, I F(AV) 3 – Voltage, V RRM (See table)