NPA1003 MA-COM | Alldatasheet

Document overview

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Technical content

Features

 Broadband operation from 20-1500 MHz  28V Operation  Input and output matched to 50 ohms  Industry Standard QFN Plastic Package  High Drain Efficiency (>50%)

Applications

 Broadband General Purpose  Defense Communications  Land Mobile Radio  Wireless Infrastructure  VHF/UHF/L-Band Radar

NDS-030 Rev. 4, 011414 Symbol Parameter Min Typ Max Units Off Characteristics IDLK Drain-Source Leakage Current (VGS=-8V, VDS=100V) - - 2 mA IGLK Gate-Source Leakage Current (VGS=-8V, VDS=0V) - - 1 mA On Characteristics VT Gate Threshold Voltage (VDS=28V, ID=2mA) -2.5 -1.6 -0.5 V VGSQ Gate Quiescent Voltage (VDS=28V, ID=100mA) -2.1 -1.2 -0.3 V RON On Resistance (VDS=2V, ID=15mA) - 1.6 -  ID, MAX Maximum Drain Current (VDS=7V pulsed, 300µS pulse width, 0.2% Duty Cycle) - 1.5 - A DC Specifications: TC = 25°C Thermal Resistance Specification: Symbol Parameter Typ Units RJC Thermal Resistance (Junction-to-Case), TJ = 180 °C °C/W Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted Symbol Parameter Max Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage -10 to 3 V IG Gate Current 4 mA PT Total Device Power Dissipation (Derated above 25°C) 14.5 W TSTG Storage Temperature Range -65 to 150 °C TJ Operating Junction Temperature 200 °C HBM Human Body Model ESD Rating (per JESD22 -A114) Class 1A MSL Moisture sensitivity level (per IPC/JEDEC J-STD-020) MSL-1 Junction Temperature (TJ) measured using IR Microscopy, Case Temperature (TC) measured using a thermocouple embedded in heatsink.

NDS-030 Rev. 4, 011414 Figure 21 - QFN4X4-16 Plastic Package Dimensions (all dimensions in inches [millimeters]) Function Pin Gate — RF Input 2, 3 Drain — RF Output 10, 11 Source — Ground Exposed Pad 1, 4-9, 12-16 No Connect* * All No Connect pins may be left floating or grounded

NDS-030 Rev. 4, 011414 Nitronex, LLC

2305 Presidential Drive

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