NP90N04VLK RENESAS | Alldatasheet

Document overview

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Technical content

Features

 Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3800 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for automotive application and AEC-Q101 qualified

Ordering Information

Part No. Lead Plating Packing Package NP90N04VLK-E1-AY *1 Pure Sn (Tin) Tape 2500 p/reel Taping (E1 type) TO-252 (MP-3ZP) NP90N04VLK-E2-AY *1 Taping (E2 type) Note: *1 Pb-free (This product does not contain Pb in the external electrode) Absolute Maximum Ratings (TA = 25°C) Item Symbol Ratings Unit Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS 20 V Drain Current (DC) (TC = 25°C) ID(DC) 90 A Drain Current (pulse) *1*3 ID(pulse) 360 A Total Power Dissipation (TC = 25°C) PT1 147 W Total Power Dissipation (TA = 25°C) PT2 1.2 W Channel Temperature Tch 175 °C Storage Temperature Tstg –55 to +175 °C Repetitive Avalanche Current *2*3 IAR 37 A Repetitive Avalanche Energy *2*3 EAR 136 mJ Thermal Resistance Channel to Case Thermal Resistance Rth(ch-C) *3 1.02 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) *3 125 °C/W Notes: *1 TC = 25°C, PW  10 s, Duty Cycle  1% *2 RG = 25 , VGS = 20 V  0 V *3. Not subject of production test. Verified by design/characterization. R07DS1236EJ0200 Rev.2.00 May 24, 2018

May 24, 2018 Preliminary Page 2 of 6 R07DS1236EJ0200 Rev.2.00 May 24, 2018 Electrical Characteristics (TA = 25°C) Item Symbol MIN. TYP. MAX. Unit Test Conditions Zero Gate Voltage Drain Current IDSS — — 1 A VDS = 40 V, VGS = 0 V Gate Leakage Current IGSS — — 10 A VGS = 20 V, VDS = 0 V Gate to Source Threshold Voltage VGS(th) 1.5 1.8 2.5 V VDS = VGS, ID = 250 A Forward Transfer Admittance *1 | yfs | 39 78 — S VDS = 5 V, ID = 45 A Drain to Source On-state Resistance *1 RDS(on)1 — 2.35 2.80 m VGS = 10 V, ID = 45 A RDS(on)2 — 3.00 6.00 m VGS = 4.5 V, ID = 23 A Input Capacitance *2 Ciss — 3800 5700 pF VDS = 25 V VGS = 0 V f = 1 MHz Output Capacitance *2 Coss — 530 800 pF Reverse Transfer Capacitance *2 Crss — 200 360 pF Turn-on Delay Time *2 td(on) — 18 40 ns VDD = 20 V, ID = 45 A VGS = 10 V RG = 0  Rise Time *2 tr — 8 20 ns Turn-off Delay Time *2 td(off) — 71 142 ns Fall Time *2 tf — 9 23 ns Total Gate Charge *2 QG — 68 102 nC VDD = 32 V VGS = 10 V ID = 90 A Gate to Source Charge QGS — 17 — nC Gate to Drain Charge QGD — 11 — nC Body Diode Forward Voltage *1 VF(S-D) — 0.9 1.5 V IF = 90 A, VGS = 0 V Reverse Recovery Time trr — 43 — ns IF = 90 A, VGS = 0 V di/dt = 100 A/s Reverse Recovery Charge Qrr — 59 — nC Note: *1 Pulsed test Note: *2 Not subject of production test. Verified by design/characterization.

May 24, 2018 Preliminary Page 3 of 6 R07DS1236EJ0200 Rev.2.00 May 24, 2018 Typical Characteristics (TA = 25°C)

May 24, 2018 Preliminary Page 4 of 6 R07DS1236EJ0200 Rev.2.00 May 24, 2018

May 24, 2018 Preliminary Page 5 of 6 R07DS1236EJ0200 Rev.2.00 May 24, 2018

May 24, 2018 Preliminary Page 6 of 6 R07DS1236EJ0200 Rev.2.00 May 24, 2018 Package Drawing (Unit: mm) TO-252 (MP-3ZP) (Mass: 0.3g TYP.) Equivalent Circuit Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of s tatic electricity as much as possible, and quickly dissipate it once, when it has occurred.

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Description

1.00 Nov 10, 2014 — First Edition Issued

2.00 May 24,2018 1

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