NP80N03ELE

NP80N03CLE NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D14032EJ4V0DS00 (4th edition) Date Published December 2002 NS CP(K) Printed in Japan The mark #### shows major revised points. NP80N03CLE,NP80N03DLE,NP80N03ELE NP80N03KLE 1999, 2000

DESCRIPTION

These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

• Channel Temperature 175 degree rated
• Super Low On-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A)
• Low Ciss : Ciss = 2600 pF TYP.
• Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS 30 V Gate to Source Voltage (VDS = 0 V) V GSS ±20 V Drain Current (DC) Note1 ID(DC) ±80 A Drain Current (Pulse) Note2 ID(pulse) ±320 A Total Power Dissipation (TA = 25°C) P T 1.8 W Total Power Dissipation (TC = 25°C) P T 120 W Channel Temperature T ch 175 °C Storage Temperature T stg –55 to +175 °C Single Avalanche Current Note3 IAS 50 / 40 / 9 A Single Avalanche Energy Note3 EAS 2.5 / 160 / 400 mJ Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 µs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V (see Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance R th(ch-C) 1.25 °C/W Channel to Ambient Thermal Resistance R th(ch-A) 83.3 °C/W

ORDERING INFORMATION

NP80N03ELE TO-263 (MP-25ZJ) NP80N03KLE TO-263 (MP-25ZK) (TO-220AB) (TO-262) (TO-263) ####

NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS VDS = 30 V, VGS = 0 V 10 µA Gate to Source Leakage Current I GSS VGS = ±20 V, VDS = 0 V ±10 µA Gate to Source Threshold Voltage V GS(th) VDS = VGS, ID = 250 µA 1.5 2.0 2.5 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 40 A 20 41 S Drain to Source On-state Resistance R DS(on)1 VGS = 10 V, ID = 40 A 5.3 7.0 m Ω RDS(on)2 VGS = 5 V, ID = 40 A 6.8 9.0 m Ω RDS(on)3 VGS = 4.5 V, ID = 40 A 7.5 11 m Ω Input Capacitance C iss VDS = 25 V 2600 3900 pF Output Capacitance C oss VGS = 0 V 590 890 pF Reverse Transfer Capacitance C rss f = 1 MHz 270 490 pF Turn-on Delay Time t d(on) VDD = 15 V, ID = 40 A 2 04 4n s Rise Time t r VGS = 10 V 1 23 1n s Turn-off Delay Time t d(off) RG = 1 Ω 60 120 ns Fall Time t f 14 35 ns Total Gate Charge 1 Q G1 VDD = 24 V, VGS = 10 V, ID = 80 A4 8 7 2 n C Total Gate Charge 2 Q G2 VDD = 24 V 28 42 nC Gate to Source Charge Q GS VGS = 5 V 10 nC Gate to Drain Charge Q GD ID = 80 A1 4 n C Body Diode Forward Voltage V F(S-D) IF = 80 A, VGS = 0 V 1.0 V Reverse Recovery Time t rr IF = 80 A, VGS = 0 V 34 ns Reverse Recovery Charge Q rr di/dt = 100 A/µs2 2 n C TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. R G = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. R L VDD TEST CIRCUIT 2 SWITCHING TIME R G PG. IG = 2 mA 50 Ω D.U.T. R L VDD ID VDD IAS VDS BV DSS Starting Tch VGS τ = 1 µs Duty Cycle ≤ 1% τ VGS Wave Form VDS Wave Form VGS VDS 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10%

Data Sheet D14032EJ4V0DS 3 NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE TYPICAL CHARACTERISTICS (T A = 25°C) Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 0 25 50 75 100 125 150 175 200 100 TC - Case Temperature - ˚C Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE TC - Case Temperature - ˚C PT - Total Power Dissipation - W 0 25 50 75 100 125 150 175 200 140 120 100 0.1 0.1 100 1000 1 10 100 Figure3. FORWARD BIAS SAFE OPERATING AREA VDS - Drain to Source Voltage - V ID - Drain Current - A ID(pulse) ID(DC) PW = 10 µs DC 100 µs 1 ms RDS(on) Limited (at V GS = 10 V) Power Dissipation Limited TC = 25˚C Single pulse Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR Starting Tch - Starting Channel Temperature - ˚C EAS - Single Avalanche Energy - mJ 25 50 75 100 125 150 175 450 400 350 300 250 200 150 100 I AS = 9 A 40 A 50 A 160 mJ 400 mJ 2.5 mJ Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - ˚C /W 0.01 0.1 100 1000 1 m 10 m 100 m 1 10 100 1000 Single pulse R th(ch-A) = 83.3˚C /W 10 100 R th(ch-C) = 1.25˚C /W µ µ

NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE Figure6. FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A 0.1 100

1000 Pulsed

TA = −50˚C 25˚C 75˚C 150˚C 175˚C Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A 2.0 3.0 4.0 400 350 300 250 200 150 100 0 1.0 Pulsed VGS = 10 V 0.0 5 V 4.5 V Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A | yfs | - Forward Transfer Admittance - S VDS = 10 V Pulsed 0.01 0.1 1 100 10 100 0.01 0.1 TA = 175˚C 75˚C 25˚C −50˚C Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V R DS(on) - Drain to Source On-state Resistance - mΩ 00 624 8 1 0 1 2 1 4 1 6 1 8 Pulsed ID = 40 A Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A R DS(on) - Drain to Source On-state Resistance - mΩ 101 100 1000 Pulsed VGS = 4.5 V 5 V 10 V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE T ch - Channel Temperature - ˚C VGS(th) - Gate to Source Threshold Voltage - V 0.5 VDS = VGS ID = 250 A 1.0 1.5 2.0 2.5 3.0 −50 0 50 100 150 µ

Data Sheet D14032EJ4V0DS 5 NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C R DS(on) - Drain to Source On-state Resistance - mΩ −50 0 50 100 150 ID = 40 A 10 V 5 V VGS = 4.5 V Pulsed Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1.0 ISD - Diode Forward Current - A 0 1.5 VSD - Source to Drain Voltage - V 0.5 Pulsed 0.1 100 1000 VGS = 0 V VGS = 10 V Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF 0.1 1 10 100 VGS = 0 V f = 1 MHz C iss C oss C rss 10000 1000 100 Figure15. SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 10.1 100 1000 10 100 tr td(on) td(off) tf Figure16. REVERSE RECOVERY TIME vs. DRAIN CURRENT IF - Drain Current - A trr - Reverse Recovery Time - ns di/dt = 100 A/µs VGS = 0 V 0.1 1 10 100 1000 100 Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - V Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 10 20 40 60 VDD = 24 V 15 V 6 V VDS 03 0 5 0 ID = 80 A 70 80 VGS

NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25) 3) TO-263 (MP-25ZJ) 4) TO-263 (MP-25ZK) 2) TO-262 (MP-25 Fin Cut) 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 10.6 MAX. 10.0 TYP. 3.6±0.2 4 3.0±0.3 1.3±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 5.9 MIN.6.0 MAX. 15.5 MAX.12.7 MIN. 1.3±0.2 0.5±0.2 2.8±0.2 φ 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 10 TYP. 1.3±0.2 0.75±0.3 2.54 TYP. 2.54 TYP. 8.5±0.212.7 MIN. 1.3±0.2 0.5±0.2 2.8±0.2 1.0±0.5 1.4±0.2 1.0±0.5 2.54 TYP. 2.54 TYP. 8.5±0.2123 5.7±0.4 4.8 MAX. 1.3±0.2 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.7±0.2 10 TYP. 0.5R TYP. 0.8R TYP. 2.8±0.2 10.0±0.3 8.0 TYP. 2.54 0.75±0.2 9.15±0.3 2.54±0.25 15.25±0.5 1.35±0.3 123 2.5 4.45±0.2 1.3±0.2 0.5±0.2 0 to 8o 1.Gate 2.Drain 3.Source 4.Fin (Drain) No plating 7.88 MIN. 0.025 to 0.25 0.25 ####

Data Sheet D14032EJ4V0DS 7 NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain

NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE The information in this document is current as of December, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer- designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1