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Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Features
- Super low on-state resistance RDS(on) = 3.9 mΩ MAX. (VGS = 10 V, ID = 30 A)
- Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)
- Logic level drive type
- Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No. Lead Plating Packing Package NP60N04VLK-E1-AY *1 Pure Sn (Tin) Tape 2500 p/reel Taping (E1 type) TO-252 (MP-3ZP) NP60N04VLK-E2-AY *1 Taping (E2 type) Note: *1 Pb-free (This product does not contain Pb in the external electrode) Absolute Maximum Ratings (TA = 25°C) Item Symbol Ratings Unit Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±60 A Drain Current (pulse) *1 I D(pulse) ±240 A Total Power Dissipation (TC = 25°C) PT1 105 W Total Power Dissipation (TA = 25°C) PT2 1.2 W Channel Temperature Tch 175 °C Storage Temperature Tstg –55 to +175 °C Repetitive Avalanche Current *2 I AR 28 A Repetitive Avalanche Energy *2 E AR 78 mJ Notes: *1 T C = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% *2 R G = 25 Ω, VGS = 20 V → 0 V Thermal Resistance Channel to Case Thermal Resistance R th(ch-C) 1.43 °C/W Channel to Ambient Thermal Resistance R th(ch-A) 125 °C/W R07DS1246EJ0100 Rev.1.00 Feb 12, 2015
R07DS1246EJ0100 Rev.1.00 Page 2 of 6 Feb 12, 2015 Electrical Characteristics (TA = 25°C) Item Symbol MIN. TYP. MAX. Unit Test Conditions Zero Gate Voltage Drain Current IDSS — — 1 μA V DS = 40 V, VGS = 0 V Gate Leakage Current IGSS — — ±10 μA V GS = ±20 V, VDS = 0 V Gate to Source Threshold Voltage V GS(th) 1.5 1.8 2.5 V V DS = VGS, ID = 250 μA Forward Transfer Admittance *1 | yfs | 30 61 — S V DS = 5 V, ID = 30 A Drain to Source On-state Resistance *1 R DS(on)1 — 3.2 3.9 m Ω V GS = 10 V, ID = 30 A RDS(on)2 — 4.3 8.6 m Ω V GS = 4.5 V, ID = 15 A Input Capacitance Ciss — 2450 3680 pF VDS = 25 V VGS = 0 V f = 1 MHz Output Capacitance Coss — 340 510 pF Reverse Transfer Capacitance Crss — 140 260 pF Turn-on Delay Time td(on) — 14 31 ns VDD = 20 V, ID = 30 A VGS = 10 V RG = 0 Ω Rise Time tr — 6 15 ns Turn-off Delay Time td(off) — 49 98 ns Fall Time tf — 6 15 ns Total Gate Charge QG — 42 63 nC VDD = 32 V VGS = 10 V ID = 60 A Gate to Source Charge QGS — 11 — nC Gate to Drain Charge QGD — 6 — nC Body Diode Forward Voltage *1 V F(S-D) — 0.9 1.5 V I F = 60 A, VGS = 0 V Reverse Recovery Time trr — 36 — ns IF = 60 A, VGS = 0 V di/dt = 100 A/μs Reverse Recovery Charge Qrr — 44 — nC Note: *1 Pulsed test TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. RL VDD TEST CIRCUIT 2 SWITCHING TIME RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS Duty Cycle ≤ 1% τ = 1 μs τ VGSWave Form VDSWave Form VGS VDS 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10%
R07DS1246EJ0100 Rev.1.00 Page 3 of 6 Feb 12, 2015 Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 120 100 120 dT - Percentage of Rated Power - % 0 25 50 75 100 125 150 175 TC - Case Temperature - °C TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 0 25 50 75 100 125 150 175 TC - Case Temperature - °C PT - Total Power Disslpation - W FORWARD BIAS SAFE OPERATING AREA 0.1 1 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A 0.1 100 1000 100 μ 1 m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 0.01 0.1 100 1000 Rth(t) - Transient Thermal Resistance - °C/W Rth(ch-C) = 1.43°C/W Rth(ch-A) = 125°C/W Power Dissipation Limited Secondary Breakdown Limited TC = 25°C Single Pulse Single Pulse ID(DC) = 60 A ID(Pulse) = 240 A RDS(ON) Limited (VGS=10 V) DC PW = 10 ms PW = 1 ms PW = 100 μs
R07DS1246EJ0100 Rev.1.00 Page 4 of 6 Feb 12, 2015 FORWARD TRANSFER CHARACTERISTICS 0.001 0.01 0.1 100 01234 VGS - Gate to Source Voltage - V ID - Drain Curent - A GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE –100 –50 0 50 100 150 200 T ch - Channel Temperature - °C VGS(th) - Gate to Source Threshold Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 0.1 1 10 100 ID - Drain Current - A |yfs| - Forward Transfer Admittance - S DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 10 100 1000 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0 5 10 15 20 VGS - Gate to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 150 250 100 200 02 .00.5 1.51.0 VDS - Drain to Source Voltage - V ID - Drain Current - A ID = 30 A Pulsed Pulsed VGS = 10 V VGS = 4.5 V VDS = 10 V Pulsed VDS = 5 V Pulsed VDS = VGS ID = 250 μA RDS(on) - Drain to Source On-State Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ TA = –55°C 25°C 75°C 150°C 175°C TA = –55°C 25°C 75°C 150°C 175°C Pulsed VGS = 10 V VGS = 4.5 V
R07DS1246EJ0100 Rev.1.00 Page 5 of 6 Feb 12, 2015 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 1000 10000 0.1 1 10 100 VDS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance -pF REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 0.1 1 10 100 IF - Drain Current - A trr - Reverse Recovery Time - ns SWITCHING CHARACTERISTICS 100 1000 0.1 1 10 100 ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns DYNAMIC INPUT/OUTPUT CHARACTERISTICS QG- Gate Charge - nC VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE 0.1 100 1000 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE –100 –50 0 50 100 150 200 Tch - Channel Temperature - °C 03 0 2010 45 40251553 5 VGS = 10 V ID = 30 A VGS = 4.5 V ID = 15 A Pulsed VGS = 0 V f = 1 MHz Ciss Crss Coss Pulsed RDS(on) - Drain to Source On-State Resistance - mΩ VDD = 20 V VGS = 10 V RG = 0 Ω di/dt = 100 A/μs VGS = 0 V VGS VDS ID = 60 A VDD = 32 V 20 V 8 V VGS = 10 V VGS = 4.5 V VGS = 0 V td(off) td(on) tr tf
R07DS1246EJ0100 Rev.1.00 Page 6 of 6 Feb 12, 2015 Package Drawing (Unit: mm) TO-252 (MP-3ZP) (Mass: 0.3g TYP.) Renesas Code: PRSS0004ZP-A 6.5±0.2 2.3±0.1 0.5±0.1 0.76±0.12 0 to 0.25 0.5±0.1 1.0 No Plating No Plating 5.1 TYP. 1.0 TYP.6.1±0.2 0.51 MIN. 4.0 MIN.0.8 10.4 MAX. (9.8 TYP.) 4.3 MIN. 1.14 MAX. 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.13 Equivalent Circuit Source Body Diode Gate Protection Diode Gate Drain Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
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Description
1.00 Feb 12, 2015 — First Edition Issued
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