NP55N04SUG

NP55N04SUG NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET DATA SHEET Document No. D17401EJ2V0DS00 (2nd edition) Date Published May 2007 NS CP(K) Printed in Japan 2004 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

DESCRIPTION

The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

• Channel temperature 175 degree rating
• Super low on-state resistance RDS(on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A)
• Low input capacitance Ciss = 3400 pF TYP. (VDS = 25 V) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±55 A Drain Current (pulse) Note1 ID(pulse) ±220 A Total Power Dissipation (TC = 25°C) PT1 W Total Power Dissipation (TA = 25°C) PT2 1.2 W Channel Temperature Tch 175 Storage Temperature Tstg −55 to +175 Repetitive Avalanche Current Note2 IAR A Repetitive Avalanche Energy Note2 EAR mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 1.95 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W

ORDERING INFORMATION

TO-252 (MP-3ZK) (TO-252) <R> <R>

ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 3.0 4.0 V Forward Transfer Admittance Note | yfs | VDS = 10 V, ID = 28 A S Drain to Source On-state Resistance Note RDS(on) VGS = 10 V, ID = 28 A 5.0 6.5 mΩ Input Capacitance Ciss VDS = 25 V, 3400 5100 pF Output Capacitance Coss VGS = 0 V, 320 480 pF Reverse Transfer Capacitance Crss f = 1 MHz 210 380 pF Turn-on Delay Time td(on) VDD = 20 V, ID = 28 A, ns Rise Time tr VGS = 10 V, 130 ns Turn-off Delay Time td(off) RG = 0 Ω 156 ns Fall Time tf ns Total Gate Charge QG VDD = 32 V, nC Gate to Source Charge QGS VGS = 10 V, nC Gate to Drain Charge QGD ID = 55 A nC Body Diode Forward Voltage Note VF(S-D) IF = 55 A, VGS = 0 V 0.94 1.5 V Reverse Recovery Time trr IF = 55 A, VGS = 0 V, ns Reverse Recovery Charge Qrr di/dt = 100 A/μs nC Note Pulsed TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. RL VDD TEST CIRCUIT 2 SWITCHING TIME RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS τ = 1 s Duty Cycle ≤ 1% τ VGS Wave Form VDS Wave Form VGS VDS 10% 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10% μ

TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 100 120 100 125 150 175 TC - Case Temperature - °C PT - Total Power Dissipation - W 100 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 0.1 100 1000 0.1 100 ID(pulse) ID(DC) TC = 25°C Single Pulse DC PW = 1i00 μs 1i m is 1i0 m is Power Dissipation Limited Secondary Brakedown Limited RDS(on) Limited (VGS = 1i0 V) VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 0.01 0.1 100 1000 Rth(ch-A) = 125°C/W Rth(ch-C) = 1.95°C/W Single Pulse PW - Pulse Width - s 100 μ 1 m 10 m 100 m 1 10 100 1000 <R> <R>

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 100 150 200 250 0.4 0.8 1.2 1.6 VGS = 10 V Pulsed VDS - Drain to Source Voltage - V ID - Drain Current - A 0.001 0.01 0.1 100 1000 VDS = 10 V Pulsed TA = −55°C 25°C 125°C 175°C VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(th) - Gate to Source Threshold Voltage - V 0.5 1.5 2.5 3.5 -100 -50 100 150 200 VDS = VGS ID = 250 μA Tch - Channel Temperature - °C | yfs | - Forward Transfer Admittance - S 100 0.1 100 1000 VDS = 10 V Pulsed TA = −55°C 25°C 125°C 175°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 100 1000 Pulsed VGS = 10 V ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ Pulsed ID = 55 A 28 A VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ -100 -50 100 150 200 VGS = 10 V ID = 28 A Pulsed Tch - Channel Temperature - °C Ciss, Coss, Crss - Capacitance - pF 100 1000 10000 0.1 100 VGS = 0 V f = 1 MHz Ciss Crss Coss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 100 1000 0.1 100 VDD = 20 V VGS = 10 V RG = 0 Ω td(off) tf td(on) tr ID - Drain Current - A VDS - Drain to Source Voltage - V ID = 55 A Pulsed VDS VGS VDD = 32 V 20 V 8 V QG - Gate Charge - nC VGS - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT IF - Diode Forward Current - A 0.01 0.1 100 1000 0.5 1.5 0 V Pulsed VGS = 10 V VF(S-D) - Source to Drain Voltage - V trr - Reverse Recovery Time - ns 100 0.1 100 di/dt = 100 A/μs VGS = 0 V IF - Diode Forward Current - A

PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 6.5±0.2 2.3±0.1 0.5±0.1 0.76±0.12 0 to 0.25 0.5±0.1 1.0 No Plating No Plating 5.1 TYP. 1.0 TYP. 6.1±0.2 0.51 MIN. 4.0 MIN. 0.8 10.4 MAX. (9.8 TYP.) 4.3 MIN. 1.14 MAX. 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Source Body Diode Gate Drain Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.

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