NP48N055KLE-E1-AY

NP48N055ELE NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR NP48N055ELE, NP48N055KLE NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D14095EJ5V0DS00 (5th edition) Date Published October 2007 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 1999, 2000, 2007

DESCRIPTION

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER LEAD PLATING PACKING PACKAGE NP48N055ELE-E1-AY Note1, 2 NP48N055ELE-E2-AY Note1, 2 TO-263 (MP-25ZJ) typ. 1.4 g NP48N055KLE-E1-AY Note1 NP48N055KLE-E2-AY Note1 Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g NP48N055CLE-S12-AZ Note1, 2 Sn-Ag-Cu TO-220 (MP-25) typ. 1.9 g NP48N055DLE-S12-AY Note1, 2 TO-262 (MP-25 Fin Cut) typ. 1.8 g NP48N055MLE-S18-AY Note1 TO-220 (MP-25K) typ. 1.9 g NP48N055NLE-S18-AY Note1 Pure Sn (Tin) Tube 50 p/tube TO-262 (MP-25SK) typ. 1.8 g Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design

FEATURES

• Channel temperature 175 degree rated
• Super low on-state resistance R DS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) R DS(on)2 = 21 mΩ MAX. (VGS = 5 V, ID = 24 A) R DS(on)3 = 24 mΩ MAX. (VGS = 4.5 V, ID = 24 A)
• Low input capacitance Ciss = 1970 pF TYP.
• Built-in gate protection diode (TO-220) (TO-262) (TO-263) <R>

Data Sheet D14095EJ5V0DS 2 NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 V Gate to Source Voltage (VDS = 0 V) V GSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±48 A Drain Current (pulse) Note1 ID(pulse) ±140 A Total Power Dissipation (TA = 25°C) P T 1.8 W Total Power Dissipation (TC = 25°C) P T 85 W Channel Temperature T ch 175 °C Storage Temperature T stg −55 to +175 °C Single Avalanche Current Note2 IAS 46/27/10 A Single Avalanche Energy Note2 EAS 2.1/73/100 mJ Notes 1. PW ≤ 10 μs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (see Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance R th(ch-C) 1.76 °C/W Channel to Ambient Thermal Resistance R th(ch-A) 83.3 °C/W

Data Sheet D14095EJ5V0DS 3 NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS V DS = 55 V, VGS = 0 V 10 μA Gate Leakage Current I GSS V GS = ±20 V, VDS = 0 V ±10 μA Gate to Source Threshold Voltage V GS(th) V DS = VGS, ID = 250 μA 1.5 2.0 2.5 V Forward Transfer Admittance | y fs | V DS = 10 V, ID = 24 A 13 25 S Drain to Source On-state Resistance R DS(on)1 V GS = 10 V, ID = 24 A 13 17 m Ω R DS(on)2 V GS = 5 V, ID = 24 A 16 21 m Ω R DS(on)3 V GS = 4.5 V, ID = 24 A 18 24 m Ω Input Capacitance C iss 1970 3000 pF Output Capacitance C oss 250 380 pF Reverse Transfer Capacitance C rss VDS = 25 V, VGS = 0 V, f = 1 MHz 130 240 pF Turn-on Delay Time t d(on) 17 38 ns Rise Time t r 11 27 ns Turn-off Delay Time t d(off) 54 110 ns Fall Time t f VDD = 28 V, ID = 24 A, VGS = 10 V, RG = 1 Ω 9.3 23 ns QG1 V DD = 44 V, VGS = 10 V, ID = 48 A 40 60 nC Total Gate Charge QG2 21 32 nC Gate to Source Charge Q GS 7 nC Gate to Drain Charge Q GD VDD = 44 V, VGS = 5 V, ID = 48 A 10 nC Body Diode Forward Voltage V F(S-D) I F = 48 A, VGS = 0 V 1.0 V Reverse Recovery Time t rr 40 ns Reverse Recovery Charge Q rr IF = 48 A, VGS = 0 V, di/dt = 100 A/μs 55 nC TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. RL VDD TEST CIRCUIT 2 SWITCHING TIME RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS τ = 1 s Duty Cycle ≤ 1% τ VGS Wave Form VDS Wave Form VGS VDS 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10% μ

Data Sheet D14095EJ5V0DS 4 NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE TYPICAL CHARACTERISTICS (TA = 25°C) Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 0 25 50 75 100 125 150 175 200 100 TC - Case Temperature - °C Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE TC - Case Temperature - °C PT - Total Power Dissipation - W 0 25 50 75 100 125 150 175 200 140 120 100 Figure3. FORWARD BIAS SAFE OPERATING AREA VDS - Drain to Source Voltage - V ID - Drain Current - A1 0.1 100 1000 1 10 100 Single pulse TC = 25°C0.1 ID(pulse) PW = 10 μs100 μs1 msDC RDS(on) Limited GS = 10 V) ID(DC) Power Dissipation Limited Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR Starting Tch - Starting Channel Temperature - °C EAS - Single Avalanche Energy - mJ 25 50 75 100 125 150 175 120 100 27 A 46 A 73 mJ 100 mJ 2.1 mJ IAS = 10 A Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - °C/W 0.01 0.1 100 1000 1 m 10 m 100 m 1 10 100 1000 Single pulse 10 100 Rth(ch-C) = 1.76°C/W Rth(ch-A) = 83.3°C/W μ μ

Data Sheet D14095EJ5V0DS 5 NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE Figure6. FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A 0.1 100

1000 Pulsed

TA = −40°C 25°C 75°C 150°C 175°C Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A 4.0 140 120 100 2.0 Pulsed 0 3.01.0 5 V VGS = 10 V 4.5 V Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A | yfs | - Forward Transfer Admittance - S VDS = 10 V Pulsed 0.01 1 100 0.1 0.01 10 1000.1 TA = 175°C 75°C 25°C −40°C Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 0 51 0 1 52 0 Pulsed ID = 24 A Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 101 100 1000 Pulsed VGS = 4.5 V 5 V 10 V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - °C VGS(th) - Gate to Source Threshold Voltage - V 0.5 VDS = VGS ID = 250 μA 1.0 1.5 2.0 2.5 3.0 −50 0 50 100 150

Data Sheet D14095EJ5V0DS 6 NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ −50 0 50 100 150 ID = 24 A VGS = 4.5 V 5 V 10 V Pulsed Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1.0 IF - Diode Forward Current - A 0 1.5 VF(S-D) - Source to Drain Voltage - V 0.5 Pulsed VGS = 10 V 0.1 100 1000 0 V Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF 0.1 1 10 10 0 VGS = 0 V f = 1 MHz Ciss Coss Crss 10000 1000 100 Figure15. SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 10.1 100 1000 10 100 tr td(on) td(off) tf VDD = 28 V VGS = 10 V RG = 1 Ω Figure16. REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT IF - Diode Forward Current - A trr - Reverse Recovery Time - ns di/dt = 100 A/μs VGS = 0 V 0.1 1 10 100 1000 100 Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - V QG - Gate Charge - nC VDS - Drain to Source Voltage - V 10 20 40 03 0 V GS ID = 48 A VDD = 44 V 28 V

11 VVDS

Data Sheet D14095EJ5V0DS 7 NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE PACKAGE DRAWINGS (Unit: mm) 1)TO-263 (MP-25ZJ) Note 2)TO-263 (MP-25ZK) 2.54 TYP. 2.54 TYP. 8.5 ± 0.2 123 5.7 ± 0.4 4.8 MAX. 1.3 ± 0.2 0.5 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.7 ± 0.2 10 TYP. 0.5R TYP. 0.8R TYP. 2.8 ± 0.2 10.0 ± 0.3 8.0 TYP. 2.54 2.54 ± 0.25 15.25 ± 0.5 1.35 ± 0.3 123 2.5 4.45 ± 0.2 1.3 ± 0.2 0.5 ± 0.2 0 to 8ο 1.Gate 2.Drain 3.Source 4.Fin (Drain) No plating 7.88 MIN. 0.025 to 0.25 0.25 3)TO-220 (MP-25) Note 4)TO-262 (MP-25 Fin Cut) Note 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 10.6 MAX. 10.0 TYP. 3.6 ± 0.2 4 3.0 ± 0.3 1.3 ± 0.2 0.75 ± 0.1 2.54 TYP. 2.54 TYP. 5.9 MIN.6.0 MAX. 15.5 MAX.12.7 MIN. 1.3 ± 0.2 φ 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 10 TYP. 1.3 ± 0.2 0.75 ± 0.3 2.54 TYP. 2.54 TYP. 8.5 ± 0.212.7 MIN. 1.3 ± 0.2 1.0 ± 0.5 Note Not for new design <R>

Data Sheet D14095EJ5V0DS 8 NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE 5)TO-220 (MP-25K) 6)TO-262 (MP-25SK) 4 2.8 ± 0.3 6.3 ± 0.3 4.45 ± 0.2 1.3 ± 0.2 0.8 ± 0.1 1.27 ± 0.2 3.1 ± 0.2 15.9 MAX. 123 13.7 ± 0.3 2.54 TYP. 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 123 1.3 ± 0.2 13.7 ± 0.3 0.8 ± 0.1 1.27 ± 0.2 2.54 TYP. 2.54 TYP. 1.2 ± 0.38.9 ± 0.2 10.1 ± 0.3 3.1 ± 0.3 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

Data Sheet D14095EJ5V0DS 9 NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Reel sideDraw-out side MARKING INFORMATION 48N055 Lot code NEC LE Pb-free plating marking Abbreviation of part number RECOMMENDED SOLDERING CONDITIONS These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Soldering Conditions Recommended Condition Symbol Infrared reflow MP-25ZJ, MP-25ZK Maximum temperature (Package's surface temperature): 260°C or below Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less IR60-00-3 Wave soldering MP-25, MP-25K, MP-25SK, MP-25 Fin Cut Maximum temperature (Solder temperature): 260°C or below Time: 10 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less THDWS Partial heating MP-25ZJ, MP-25ZK, MP-25K, MP-25SK Maximum temperature (Pin temperature): 350°C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less P350 Partial heating MP-25, MP-25 Fin Cut Maximum temperature (Pin temperature): 300°C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less P300 Caution Do not use different soldering methods together (except for partial heating). <R> <R> <R>

NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE The information in this document is current as of October, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer- designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) M8E 02. 11-1 (1) (2) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "Standard": "Special": "Specific":