NP36P06KDG NEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR NP36P06KDG SWITCHING P-CHANNEL POWER MOSFET DATA SHEET Document No. D18687EJ3V0DS00 (3rd edition) Date Published May 2007 NS CP(K) Printed in Japan 2007 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

DESCRIPTION

The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

ORDERING INFORMATION

Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) Note Pb-free (This product does not contain Pb in external electrode.)

FEATURES

  • Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A)
  • Low input capacitance Ciss = 3100 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −60 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V Drain Current (DC) (TC = 25°C) ID(DC) m36 A Drain Current (pulse) Note1 ID(pulse) m108 A Total Power Dissipation (TC = 25°C) PT1 W Total Power Dissipation (TA = 25°C) PT2 1.8 W Channel Temperature Tch 175 Storage Temperature Tstg −55 to +175 Single Avalanche Current Note2 IAS A Single Avalanche Energy Note2 EAS mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 2.68 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W (TO-263) <R>

ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −60 V, VGS = 0 V −10 μA Gate Leakage Current IGSS VGS = m20 V, VDS = 0 V m100 nA Gate to Source Threshold Voltage VGS(th) VDS = −10 V, ID = −1 mA −1.0 −1.6 −2.5 V Forward Transfer Admittance Note | yfs | VDS = −10 V, ID = −18 A S Drain to Source On-state Resistance Note RDS(on)1 VGS = −10 V, ID = −18 A 23.1 29.5 mΩ RDS(on)2 VGS = −4.5 V, ID = −18 A 27.0 37.5 mΩ Input Capacitance Ciss VDS = −10 V, 3100 pF Output Capacitance Coss VGS = 0 V, 350 pF Reverse Transfer Capacitance Crss f = 1 MHz 205 pF Turn-on Delay Time td(on) VDD = −30 V, ID = −18 A, ns Rise Time tr VGS = −10 V, ns Turn-off Delay Time td(off) RG = 0 Ω 210 ns Fall Time tf 110 ns Total Gate Charge QG VDD = −48 V, nC Gate to Source Charge QGS VGS = −10 V, nC Gate to Drain Charge QGD ID = −36 A nC Body Diode Forward Voltage Note VF(S-D) IF = −36 A, VGS = 0 V 0.98 1.5 V Reverse Recovery Time trr IF = −36 A, VGS = 0 V, ns Reverse Recovery Charge Qrr di/dt = −100 A/μs nC Note Pulsed test PW ≤ 350 μs, Duty Cycle ≤ 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY RG = 25 Ω 50 Ω L VDD VGS = −20 → 0 V BVDSS IAS ID VDS Starting Tch VDD D.U.T. TEST CIRCUIT 3 GATE CHARGE TEST CIRCUIT 2 SWITCHING TIME PG. RG VGS(−) D.U.T. RL VDD τ = 1 s μ Duty Cycle ≤ 1% VGS Wave Form VDS Wave Form VGS(−) 10% 90% VGS 10% VDS(−) 90% 90% td(on) tr td(off) t f 10% τ VDS ton toff PG. PG. 50 Ω D.U.T. RL VDD IG = −2 mA

TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 100 120 100 125 150 175 200 Tch - Channel Temperature - °C PT - Total Power Dissipation - W 100 125 150 175 200 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A -0.01 -0.1 -10 -100 -1000 -0.1 -10 -100 DC ID(DC) ID(pulse) RDS(on) Limited (VGS = −10 V) TC = 25°C Single Pulse PW = 1i00 μs 1i m is Power Dissipation Limited 1i0 m is VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 0.01 0.1 100 1000 Rth(ch-C) = 2.68°C/Wi Rth(ch-A) = 83.3°C/Wi Single Pulse PW - Pulse Width - s 100 μ 1 m 10 m 100 m 100 1000

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A -20 -40 -60 -80 -100 -120 VGS = −10 V Pulsed −4.5 V VDS - Drain to Source Voltage - V ID - Drain Current - A -0.001 -0.01 -0.1 -10 -100 -1000 VDS = −10 V Pulsed Tch = −55°C −25°C 25°C 75°C 125°C 150°C 175°C VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(th) - Gate to Source Threshold Voltage - V -0.5 -1.5 -2.5 -75 -25 125 175 225 VDS = −10 V ID = −1 mA Tch - Channel Temperature - °C | yfs | - Forward Transfer Admittance - S 0.1 100 -0.1 -10 -100 VDS = −10 V Pulsed Tch = −55°C −25°C 25°C 75°C 125°C 150°C 175°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ -10 -100 -1000 −10 V Pulsed VGS = −4.5 V ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ -10 -15 -20 Pulsed ID = −36 A −18 A −8 A VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ -75 -25 125 175 225 ID = −18 A Pulsed −10 V VGS = −4.5 V Tch - Channel Temperature - °C Ciss, Coss, Crss - Capacitance - pF 100 1000 10000 -0.1 -10 -100 VGS = 0 V f = 1 MHz Ciss Coss Crss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 100 1000 -0.1 -10 -100 tr td(off) td(on) tf VDD = −30 V VGS = −10 V RG = 0 Ω ID - Drain Current - A VDS - Drain to Source Voltage - V -10 -20 -30 -40 -50 -60 -10 -12 VDS ID = −36 A VGS VDD = −48 V −30 V −12 V QG - Gate Charge - nC VGS - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT IF - Diode Forward Current - A -0.01 -0.1 -10 -100 0.5 1.5 VGS = −10 V 0 V Pulsed VF(S-D) - Source to Drain Voltage - V trr - Reverse Recovery Time - ns 100 1000 -0.1 -10 -100 di/dt = −100 A/μs VGS = 0 V IF - Diode Forward Current - A

PACKAGE DRAWING (Unit: mm) TO-263 (MP-25ZK) 10.0±0.3 8.0 TYP. 2.54 0.75±0.2 9.15±0.3 2.54±0.25 15.25±0.5 1.35±0.3 2.5 4.45±0.2 1.3±0.2 0.5±0.2 0 to 8 o 1.Gate 2.Drain 3.Source 4.Fin (Drain) No plating 7.88 MIN. 0.025 to 0.25 0.25 EQUIVALENT CIRCUIT Source Body Diode Gate Drain Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.

The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer- designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) M8E 02. 11-1 (1) (2) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "Standard": "Special": "Specific":