NP35N055YUK_V01 RENESAS | Alldatasheet
Document overview
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Technical content
Features
Super low on-state resistance RDS(on) = 6.7 m MAX. (VGS = 10 V, ID = 18 A) Non logic level drive type Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No. Lead Plating Packing Package NP35N055YUK-E1-AY *1 Pure Sn (Tin) Tape 2500 p/reel T aping (E1 type) 8-pin HSON NP35N055YUK-E2-AY *1 Taping (E2 type) Note: *1 Pb-free (This product does not c ontain Pb in the external electrode) Absolute Maximum Ratings (TA = 25°C) Item Symbol Ratings Unit Drain to Source Voltage (VGS = 0 V) V DSS 5 5 V Gate to Source Voltage (VDS = 0 V) V GSS 20 V Drain Current (DC) (TC = 25°C) I D(DC) 35 A Drain Current (pulse) *1, 4 I D(pulse) 140 A Total Power Dissipation (TC = 25°C) P T1 9 7 W Total Power Dissipation (TA = 25°C) *2 P T2 1 . 0 W Channel Temperature T ch 175 °C Storage Temperature T stg –55 to +175 °C Repetitive Avalanche Current *3, 4 I AR 2 4 A Repetitive Avalanche Energy *3, 4 E AR 5 8 m J Thermal Resistance Channel to Case Thermal Resistance R th(ch-C)*4 1.55 °C/W Channel to Ambient Thermal Resistance R th(ch-A) *4 150 °C/W Notes: *1 T C = 25°C, PW 10 s, Duty Cycle 1% *2 Mounted on glass epo xy substrate of 40 mm 40 mm 1.6 mmt with 4% Copper area (35 m) * 3 R G = 25 , VGS = 20 V 0 V *4. Not subject of production test. Verified by design/characterization. R07DS1002EJ0200 Rev.2.00 May 24, 2018
R07DS1002EJ0200 Rev.2.00 Page 2 of 6 May 24, 2018 Electrical Characteristics (TA = 25°C) Item Symbol MIN. TYP. MAX. Unit Test Conditions Zero Gate Voltage Drain Current I DSS — — 1 A V DS = 55 V, VGS = 0 V Gate Leakage Current I GSS — — 100 nA V GS = 20 V, VDS = 0 V Gate to Source Threshold Voltage V GS(th) 2.0 3.0 4.0 V V DS = VGS, ID = 250 A Forward Transfer Admittance *1 | y fs | 18 36 — S V DS = 5 V, ID = 18 A Drain to Source On-state Resistance *1 R DS(on) — 5.3 6.7 m V GS = 10 V, ID = 18 A Input Capacitance *2 C iss — 2240 3360 pF V DS = 25 V VGS = 0 V f = 1 MHz Output Capacitance *2 C oss — 230 350 pF Reverse Transfer Capacitance *2 C rss — 95 180 pF Turn-on Delay Time *2 t d(on) — 19 38 ns V DD = 28 V, ID = 18 A VGS = 10 V RG = 0 Rise Time *2 t r — 9 2 2 n s Turn-off Delay Time *2 t d(off) — 4 7 9 4 n s Fall Time *2 t f — 4 1 0 n s Total Gate Charge *2 Q G — 3 8 5 7 n C V DD = 44 V VGS = 10 V ID = 35 A Gate to Source Charge Q GS — 10 — nC Gate to Drain Charge Q GD — 10 — nC Body Diode Forward Voltage *1 V F(S-D) — 0.9 1.5 V I F = 35 A, VGS = 0 V Reverse Recovery Time t rr — 3 5 — n s I F = 35 A, VGS = 0 V di/dt = 100 A/s Reverse Recovery Charge Q rr — 41 — nC Note: *1 Pulsed test Note: *2 Not subject of producti on test. Verified by design/characterization. TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. RL VDD TEST CIRCUIT 2 SWITCHING TIME RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS Duty Cycle ≤ 1% τ = 1 μs τ VGSWave Form VDSWave Form VGS VDS 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10%
R07DS1002EJ0200 Rev.2.00 Page 3 of 6 May 24, 2018 Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 120 100 120 dT - Percentage of Rated Power - % 0 25 50 75 100 125 150 175 TC - Case Temperature - °C TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 0 25 50 75 100 125 150 175 TC - Case Temperature - °C PT - Total Power Disslpation - W FORWARD BIAS SAFE OPERATING AREA 0.1 1 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A 0.1 100 1000 TC = 25°C Single Pulse ID(Pulse) = 140 A RDS(ON) Limited (VGS=10 V) PW = 10 ms PW = 1 ms PW = 100 μs 100 μ 1 m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 0.01 0.1 100 1000 Rth(t) - Transient Thermal Resistance - °C/W Rth(ch-C) = 1.55°C/W Rth(ch-A) = 150°C/W Power Dissipation Limited Secondary Breakdown Limited Single pulse Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% copper area (35 μm) ID(DC) = 35 A DC
R07DS1002EJ0200 Rev.2.00 Page 4 of 6 May 24, 2018 FORWARD TRANSFER CHARACTERISTICS 0.001 0.01 0.1 100 0123456 VGS - Gate to Source Voltage - V ID - Drain Curent - A GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE –100 –50 0 50 100 150 200 T ch - Channel Temperature - °C VGS(th) - Gate to Source Threshold Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 0.1 1 10 100 ID - Drain Current - A |yfs| - Forward Transfer Admittance - S DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 10 100 1000 ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0 5 10 15 20 VGS - Gate to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 160 140 120 100 V DS - Drain to Source Voltage - V ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - mΩ VDS = VGS ID = 250 μA VGS = 10 V Pulsed ID = 18 A Pulsed VGS = 10 V Pulsed VDS = 10 V Pulsed VDS = 5 V Pulsed TA = –55°C 25°C 75°C 125°C 175°C TA = –55°C 25°C 75°C 125°C 175°C
R07DS1002EJ0200 Rev.2.00 Page 5 of 6 May 24, 2018 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 1000 10000 0.1 1 10 100 VDS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance -pF REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 0.1 1 10 100 IF - Drain Current - A trr - Reverse Recovery Time - ns SWITCHING CHARACTERISTICS 100 1000 0.1 1 10 100 ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns DYNAMIC INPUT/OUTPUT CHARACTERISTICS QG- Gate Charge - nC VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE 0.1 100 1000 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE –100 –50 0 50 100 150 200 Tch - Channel Temperature - °C RDS(on) - Drain to Source On-State Resistance - mΩ 01 5 2 5 3 0 201054 0 35 VDD = 28 V VGS = 10 V RG = 0 Ω tf tr td(on) td(off) VGS = 10 V ID = 18 A Pulsed VGS = 10 V VGS = 0 V Pulsed di/dt = 100 A/μs VGS = 0 V VGS = 0 V f = 1 MHz Ciss Crss Coss VGS VDS ID = 35 A VDD = 44 V 28 V 11 V
R07DS1002EJ0200 Rev.2.00 Page 6 of 6 May 24, 2018 Package Drawing (Unit: mm) 8-pin HSON (Mass: 0.128 g TYP.) 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain Equivalent Circuit Source Body DiodeGate Drain Remark: Strong electric field, w hen exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
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Description
1.00 Feb 08, 2013 — First Edition Issued
2.00 May 24 ,2018 1
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