NP35N04YLG RENESAS | Alldatasheet

Document overview

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Technical content

Features

  • Low on-state resistance ⎯ RDS(on) = 9.7 mΩ MAX. (VGS = 10 V, ID = 17.5 A) ⎯ RDS(on) = 15 mΩ MAX. (VGS = 5 V, ID = 17.5 A)
  • Logic level drive type
  • Gate to Source ESD protection diode built in
  • Designed for automotive application and AEC-Q101 qualified

Ordering Information

Part No. LEAD PLATING PACKING Package NP35N04YLG -E1-AY ∗1 8-pin HSON, Taping (E1 type) NP35N04YLG -E2-AY ∗1 Pure Sn (Tin) Tape 2500 p/reel 8-pin HSON, Taping (E2 type) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (TA = 25°C) Item Symbol Ratings Unit Drain to Source Voltage (VGS = 0 V) V DSS 40 V Gate to Source Voltage (VDS = 0 V) V GSS ±20 V Drain Current (DC) (TC = 25°C) I D(DC) ±35 A Drain Current (pulse) ∗1 I D(pulse) ±105 A Total Power Dissipation (TC = 25°C) P T1 77 W Total Power Dissipation (TA = 25°C) ∗2 P T2 1.0 W Channel Temperature T ch 175 ° C Storage Temperature T stg −55 to +175 ° C Repetitive Avalanche Current ∗3 I AR 22 A Repetitive Avalanche Energy ∗3 E AR 48 mJ Thermal Resistance Channel to Case Thermal Resistance R th(ch-C) 1.95 °C/W Channel to Ambient Thermal Resistance ∗2 R th(ch-A) 150 °C/W Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt *3. T ch(peak) ≤ 150°C, RG = 25 Ω R07DS0182EJ0100 Rev.1.00 Oct 22, 2010

R07DS0182EJ0100 Rev.1.00 Page 2 of 6 Oct 22, 2010 Electrical Characteristics (TA = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero Gate Voltage Drain Current I DSS 1 μA V DS = 40 V, VGS = 0 V Gate Leakage Current I GSS ±10 μA V GS = ±20 V, VDS = 0 V Gate to Source Threshold Voltage V GS(th) 1.4 1.9 2.5 V V DS = VGS, ID = 250 μ A Forward Transfer Admittance ∗1 | y fs | 15 30 S V DS = 5 V, ID = 17.5 A Drain to Source On-state Resistance ∗1 RDS(on)1 7.8 9.7 m Ω V GS = 10 V, ID = 17.5 A Drain to Source On-state Resistance ∗1 RDS(on)2 9.6 15 m Ω V GS = 5 V, ID = 17.5 A Input Capacitance C iss 1900 2850 pF V DS = 25 V, Output Capacitance C oss 190 290 pF V GS = 0 V, Reverse Transfer Capacitance C rss 120 220 pF f = 1 MHz Turn-on Delay Time t d(on) 13 26 ns V DD = 20 V, ID = 17.5 A, Rise Time t r 11 27 ns V GS = 10 V, Turn-off Delay Time t d(off) 43 86 ns R G = 0 Ω Fall Time t f 5 12 ns Total Gate Charge Q G 34 51 nC Gate to Source Charge Q GS 6 nC Gate to Drain Charge Q GD 10 nC VDD = 32 V, VGS = 10 V, ID = 35 A Body Diode Forward Voltage ∗1 V F(S-D) 0.91 1.5 V I F = 35 A, VGS = 0 V Reverse Recovery Time t rr 27 ns Reverse Recovery Charge Q rr 25 nC IF = 35 A, VGS = 0 V, di/dt = 100 A/μ s Note: ∗1. Pulsed TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. RL VDD TEST CIRCUIT 2 SWITCHING TIME RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS = 1 s Duty Cycle ≤ 1% τ μ τ VGS Wave Form VDS Wave Form VGS VDS 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10%

R07DS0182EJ0100 Rev.1.00 Page 3 of 6 Oct 22, 2010 Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 100 0 25 50 75 100 125 150 175 TC - Case Temperature - °C PT - Total Power Dissipation - W 0 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 0.1 100 1000 0.1 1 10 100 ID(pul se) Tc=25C Single Pulse Power Dissipation Limited 1ms 10ms PW=100μs RDS(on) Limited (VGS = 10 V) VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 0.01 0.1 100 1000 Rth(ch-A): 150°C/W Rth(ch-C): 1.95°C/W Single pulse Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt PW - Pulse Width - s 100 μ 1 m 10 m 100 m 1 10 100 1000

R07DS0182EJ0100 Rev.1.00 Page 4 of 6 Oct 22, 2010 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 100 120 00 . 511 . 52 VGS = 10 V Puls ed 5 V VDS - Drain to Source Voltage - V ID - Drain Current - A 0.001 0.01 0.1 100 012345 VDS= 10 V Puls ed TA = 75°C 125°C 150°C 175°C −55°C −25°C 25°C VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(th) - Gate to Source Threshold Voltage - V 0.5 1.5 2.5 -100 -50 0 50 100 150 200 VDS = VGS ID = 250 μA Tch - Channel Temperature - °C | yfs | - Forward Transfer Admittance - S 100 0.1 1 10 100 VDS = 5 V Puls ed TA = 75°C 25°C −25°C −55°C 175°C 150°C 125°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 0.1 1 10 100 1000 VGS = 5 V 10 V Puls ed ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 0 5 10 15 20 Puls ed ID = 35 A 17.5 A 7 A VGS - Gate to Source Voltage - V

R07DS0182EJ0100 Rev.1.00 Page 5 of 6 Oct 22, 2010 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ -100 -50 0 50 100 150 200 ID = 17.5 A Puls ed 10 V VGS = 5 V Tch - Channel Temperature - °C Ciss, Coss, Crss - Capacitance - pF 100 1000 10000 0.1 1 10 100 Ciss Coss Crss VGS = 0 V f = 1M H z VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 100 1000 0.1 1 10 100 VDD = 20 V VGS = 10 V RG = 0 Ω td(off ) td(on) tr tf ID - Drain Current - A VDS - Drain to Source Voltage - V 0 1 02 03 04 0 VDS VGS ID = 35 A VDD = 32 V 20 V 8 V QG - Gate Charge - nC VGS - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT IF - Diode Forward Current - A 0.1 100 1000 0 0.5 1 1.5

0 VVGS = 10 V

VF(S-D) - Source to Drain Voltage - V trr - Reverse Recovery Time - ns 100 0.1 1 10 100 di/dt = 100 A/μs VGS = 0 V IF - Drain Current - A

R07DS0182EJ0100 Rev.1.00 Page 6 of 6 Oct 22, 2010 Package Drawings (Unit: mm) 8-pin HSON (Mass: 0.13 g TYP.) 1.27 5.0 ±0.2 5.15 ±0.2 6.0 ±0.2 3.18 ±0.2 0.8 ±0.150.6 ±0.15 0.42 −0.05 +0.1 0.10 M 0.10 S 0 −0 +0.05 0.42 ±0.05 1.45 MAX. 3.8 ±0.2 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 5.4 ±0.2 0.73 0.4 Equivalent Circuit Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

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Description

Rev. Date Page Summary

1.00 Oct 22, 2010 − First Edition Issued

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