NP34N055HHE

NP34N055HHE NEC | Alldatasheet

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© 1999,2000 MOS FIELD EFFECT TRANSISTOR NP34N055HHE, NP34N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. D14153EJ3V0DS00 (3rd edition) Date Published March 2001 NS CP(K) Printed in Japan The mark # shows major revised points. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

ORDERING INFORMATION

DESCRIPTION

These products are N-Channel MOS Field Effect Tran- sistors designed for high current switching applications.

FEATURES

• Channel temperature 175 degree rated
• Super low on-state resistance R DS(on) = 19 mΩ MAX. (VGS = 10 V, ID = 17 A)
• Low Ciss : Ciss = 1600 pF TYP.
• Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage V DSS 55 V Gate to Source Voltage V GSS ±20 V Drain Current (DC) I D(DC) ±34 A Drain Current (Pulse) Note1 ID(pulse) ±136 A Total Power Dissipation (TA = 25 °C) P T 1.2 W Total Power Dissipation (TC = 25 °C) P T 88 W Single Avalanche Current Note2 IAS 34 / 27 / 10 A Single Avalanche Energy Note2 EAS 11 / 72 / 100 mJ Channel Temperature T ch 175 °C Storage Temperature T stg –55 to + 175 °C Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V (see Figure 4.) THERMAL RESISTANCE Channel to Case R th(ch-C) 1.70 °C/W Channel to Ambient R th(ch-A) 125 °C/W (TO-251) (TO-252)

NP34N055HHE, NP34N055IHE ELECTRICAL CHARACTERISTICS (T A = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source On-state Resistance R DS(on) VGS = 10 V, ID = 17 A 15 19 m Ω Gate to Source Threshold Voltage V GS(th) VDS = VGS , ID = 250 µA 2.0 3.0 4.0 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 17 A 6 12 S Drain Leakage Current I DSS VDS = 55 V, VGS = 0 V 10 µA Gate to Source Leakage Current I GSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance C iss VDS = 25 V 1600 2400 pF Output Capacitance C oss VGS = 0 V 250 380 pF Reverse Transfer Capacitance C rss f = 1 MHz 120 220 pF Turn-on Delay Time t d(on) ID = 17 A 21 47 ns Rise Time t r VGS(on) = 10 V 15 38 ns Turn-off Delay Time t d(off) VDD = 28 V 35 70 ns Fall Time t f R G = 1 Ω 12 29 ns Total Gate Charge Q G ID = 34 A 30 45 nC Gate to Source Charge Q GS VDD = 44 V 9 nC Gate to Drain Charge Q GD VGS = 10 V 12 nC Body Diode Forward Voltage V F(S-D) IF = 34 A, VGS = 0 V 1.0 V Reverse Recovery Time t rr IF = 34 A, VGS = 0 V 40 ns Reverse Recovery Charge Q rr di/dt = 100 A/µs5 8 n C TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. R G = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. R L VDD TEST CIRCUIT 2 SWITCHING TIME R G PG. IG = 2 mA 50 Ω D.U.T. R L VDD ID VDD IAS VDS BV DSS Starting Tch VGS τ = 1 µs Duty Cycle ≤ 1 % τ VGS Wave Form VDS Wave Form VGS VDS 10 %0 90 % 90 % 90 % VGS(on) VDS ton toff td(on) tr td(off) tf 10 %1 0 %

Data Sheet D14153EJ3V0DS 3 NP34N055HHE, NP34N055IHE TYPICAL CHARACTERISTICS (T A = 25°C) Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 0 25 50 75 100 125 150 175 200 100 TC - Case Temperature - ˚C Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE TC - Case Temperature - ˚C PT - Total Power Dissipation - W 0 25 50 75 100 125 150 175 200 140 120 100 Figure3. FORWARD BIAS SAFE OPERATING AREA 1 10 100 ID - Drain Current - A 0.1 VDS - Drain to Source Voltage - V 100 1000 0.1 100 µs1 ms PW = 10 µs ID(pulse) ID(DC) Power Dissipation Limited DC RDS(on) Limited (at V GS = 10 V) TC = 25˚C Single Pulse Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR Starting Tch - Starting Channel Temperature - ˚C EAS - Single Avalanche Energy - mJ 25 50 75 100 125 150 175 120 100 I AS = 10 A 27 A 34 A 72 mJ 100 mJ 11 mJ Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - ˚C /W 0.01 0.1 100 1000 1 m 10 m 100 m 1 10 100 1000 Single Pulse TC = 25˚C 10 µ 100 µ R th(ch-C) = 1.70 ˚C /W R th(ch-A) = 125 ˚C /W

NP34N055HHE, NP34N055IHE Figure6. FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A 0.1 0.01

100 Pulsed

TA = 175˚C 150˚C 75˚C 25˚C −55˚C Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A 0 4 6 8 200 160 120 Pulsed VGS =10 V Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A | yfs | - Forward Transfer Admittance - S VDS =10V Pulsed 0.01 0.1 1 100 10 100 0.01 0.1 TA = 175˚C 75˚C 25˚C −55˚C Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V R DS(on) - Drain to Source On-state Resistance - mΩ 0 51 0 1 52 0 Pulsed ID = 17 A Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A R DS(on) - Drain to Source On-state Resistance - mΩ 101 100 1000 Pulsed VGS = 10 V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C VGS(th) - Gate to Source Threshold Voltage - V VDS = VGS ID = 250 A4.0 3.0 2.0 1.0 −50 0 50 100 150 µ

Data Sheet D14153EJ3V0DS 5 NP34N055HHE, NP34N055IHE Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C R DS(on) - Drain to Source On-state Resistance - mΩ −50 0 50 100 150 ID = 17 A VGS = 10 V Pulsed Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1.0 ISD - Diode Forward Current - A 0 1.5 VSD - Source to Drain Voltage - V 0.5 Pulsed VGS = 10 V 0.1 100 1000 VGS = 0 V Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF 0.1 1 10 100 VGS = 0 V f = 1 MHz C iss C oss C rss 10000 1000 100 Figure15. SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 10.1 100 1000 10 100 tf td(on) td(off) tr Figure16. REVERSE RECOVERY TIME vs. DRAIN CURRENT IF - Drain Current - A trr - Reverse Recovery Time - ns di/dt = 100 A/µs VGS = 0 V 0.1 1 10 100 1000 100 Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - V Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 48 1 6 01 2 ID = 34 A VDS 24 2820 32 VDD = 44 V 28 V 11 V VGS

NP34N055HHE, NP34N055IHE PACKAGE DRAWINGS (Unit : mm) 1)TO-251 (MP-3) 2)TO-252 (MP-3Z) 5.0±0.2 2.3±0.2 0.5±0.1 1.1±0.2 6.5±0.2 2.3 TYP. 2.3 TYP. 5.5±0.2 1.6±0.2 7.0 MIN.0.75 TYP. 13.7 MIN. 1.5+0.2 −0.1 0.5+0.2 −0.1 0.5+0.2 −0.1 5.0±0.2 0.5±0.1 0.8 TYP. 2.3 TYP. 2.3 TYP. 6.5±0.2 2.3±0.2 4.3 MAX.0.8 TYP. 2.0 MIN. 1.0 MIN. 1.8 TYP. 1.5+0.2 −0.1 10.0 MAX. 0.7 TYP. 5.5±0.2 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain

Data Sheet D14153EJ3V0DS 7 NP34N055HHE, NP34N055IHE [MEMO]

NP34N055HHE, NP34N055IHE M8E 00. 4 The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).