NP3095G NATLINEAR | Alldatasheet
Document overview
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Technical content
30V N-Channel Enhancement Mode MOSFET
Description
The NP3095G uses advanced trench technology and design to provide excellent RDS(ON) withlowgatecharge.Itcanbeusedinawidevariety ofapplications. GeneralFeatures VDS =30V，ID =95A RDS(ON)(Typ.)=4.3mΩ @VGS=10V RDS(ON)(Typ.)=6.9mΩ @VGS=4.5V Highpowerand currenthanding capability Leadfreeproduct isacquired Surface mountpackage Application Loadswitch Package TO-252-2L Schematicdiagram Markingandpinassignment XXXX—WaferInformation YYYY—QualityCode OrderingInformation PartNumber StorageTemperature Package DevicesPerReel NP3095G-G -55°Cto+150°C TO-252-2L 2500 AbsoluteMaximumRatings(TA=25℃ unlessotherwise noted) parameter symbol limit unit Drain-sourcevoltage VDS 30 V Gate-sourcevoltage VGS ±20 V ContinuousDrain Current TC=25°C ID A TC=70°C 66 Pulsed DrainCurrent IDP 380 A Avalanche energy(L=0.5mH) EAS 231 mJ Maximum powerdisspation TC=25°C PD W TC=70°C 9 OperatingjunctionTemperature range Tj -55—150 ℃
ElectricalCharacteristics(TA=25℃ unlessotherwise noted) Parameter Symbol Condition Min Typ Max Unit StaticCharacteristics Drain-sourcebreakdown voltage BVDSS VGS=0V,ID=250µA 30 - - V Zero gatevoltage drain current IDSS VDS=30V,VGS=0V - - 1 µA TJ=85°C - - 30 GateLeakageCurrent IGSS VDS=0V,VGS=±20V - - ±100 nA Gatethreshold voltage VGS(th) VDS=VGS,ID=250µA 1 1.5 2.5 V Drain-sourceon-stateresistance1 RDS(ON) VGS=10V,ID=1A - 4.3 5.5 mΩ VGS=4.5V,ID=1A - 6.9 8.5 mΩ OnStatus DrainCurrent ID(ON) VDS=10V,VGS=10V 95 - - A DiodeCharacteristics Diode ContinuousForward Current IS - 95 - A ReverseRecoveryTime trr IF=20A, dI/dt=100A/us - 34 - ns ReverseRecoveryCharge Qrr - 30 - nC DynamicCharacteristics2 GateResistance RG VGS=0V,VDS=0V,f=1MHz - 1.5 - Ω Inputcapacitance CISS VGS=0V,VDS=15V f=1.0MHz - 2153 - pFOutputcapacitance COSS - 289 - Reversetransfercapacitance CRSS - 238 - Turn-ondelay time tD(ON) VGS=10V,VDS=15V, RL=20Ω,ID=1A,RG=6Ω - 13 - ns Turn-onRisetime tr - 14 - Turn-offdelay time tD(OFF) - 38 - Turn-offFall time tf - 16 - Totalgate charge Qg VGS=10V,ID=1A VDS=15V - 46.3 nCGate-sourcecharge Qgs 39.7 Gate-draincharge Qgd - 1 - Drain-SourceDiode Characteristics Diode forwardvoltage VSD ISD=1A,VGS=0V - 0.7 1.2 V Note:1：Pulsetest;pulsewidth≦ 300ns,duty cycle≦ 2%. 2：Guaranteedbydesign,notsubjecttoproductiontesting.
TypicalPerformanceCharacteristics
TO-252-2L