NP29N06QDK_V01 RENESAS | Alldatasheet
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Technical content
Features
Super low on-state resistance RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7.5 A) Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified Small size package 8-pin HSON dual Outline Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No. Lead Plating Packing Package NP29N06QDK-E1-AY *1 Pure Sn (Tin) Tape 2500 p/reel Taping (E1 type) 8-pin HSON dual NP29N06QDK-E2-AY *1 Taping (E2 type) Note: *1. Pb-free (This product does not contain Pb in the external electrode) R07DS1330EJ0200 Rev.2.00 May 24, 2018
R07DS1330EJ0200 Rev.2.00 Page 2 of 7 May 24, 2018 Absolute Maximum Ratings (TA = 25°C) Item Symbol Ratings Unit Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25C) 4 ID(DC) ±30 A Drain Current (pulse) 1, 4, 5 ID(pulse) ±60 A Total Power Dissipation (TC = 25C) 4 PT1 44 W Total Power Dissipation (TA = 25C) 2, 4 PT2 1.0 W Channel Temperature Tch 175 C Storage Temperature Tstg 55 to 175 C Repetitive Avalanche Current 3, 5 IAR 12 A Repetitive Avalanche Energy 3, 5 EAR 15 mJ Thermal Resistance Channel to Case Thermal Resistance Rth(ch-C)*5 3.37 C/W Channel to Ambient Thermal Resistance 2 Rth(ch-A) *5 150 C/W Notes: *1. TC = 25°C, PW 10 s, Duty Cycle 1% *2. Mounted on glass epoxy substrate of 40 mm 40 mm 1.6 mmt with 4% copper area (35 m) *3. RG = 25 , VGS = 20 V 0 V *4. One channel operation *5. Not subject of production test. Verified by design/characterization.
R07DS1330EJ0200 Rev.2.00 Page 3 of 7 May 24, 2018 Electrical Characteristics (TA = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero Gate Voltage Drain Current IDSS 1 A VDS = 60 V, VGS = 0 V Gate Leakage Current IGSS ±100 nA VGS = ±20 V, VDS = 0 V Gate to Source Threshold Voltage VGS(th) 1.5 2.1 2.5 V VDS = VGS, ID = 250 A Forward Transfer Admittance 1 | yfs | 10 22 S VDS = 5 V, ID = 15 A Drain to Source On-state Resistance 1 RDS(on)1 13.8 20 m VGS = 10 V, ID = 15 A RDS(on)2 16.5 30 m VGS = 4.5 V, ID = 7.5 A Input Capacitance *2 Ciss 1000 1500 pF VDS = 25 V, VGS = 0 V, f = 1 MHz Output Capacitance *2 Coss 110 170 pF Reverse Transfer Capacitance *2 Crss 50 90 pF Turn-on Delay Time *2 td(on) 15 30 ns VDD = 30 V, ID = 15 A, VGS = 10 V, RG = 0 Rise Time *2 tr 5 12 ns Turn-off Delay Time *2 td(off) 40 80 ns Fall Time *2 tf 2 5 ns Total Gate Charge *2 QG 16 24 nC VDD = 48 V, VGS = 10 V, ID = 30 A Gate to Source Charge QGS 4 nC Gate to Drain Charge QGD 3 nC Body Diode Forward Voltage 1 VF(S-D) 0.9 1.5 V IF = 30 A, VGS = 0 V Reverse Recovery Time trr 25 ns IF = 30 A, VGS = 0 V, di/dt = 100 A/s Reverse Recovery Charge Qrr 22 nC Note: *1. Pulsed test Note: *2. Not subject of production test. Verified by design/characterization.
R07DS1330EJ0200 Rev.2.00 Page 4 of 7 May 24, 2018 Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 100 120 0 50 100 150 200 TC - Case Temperature - C Pt – Total Power Dissipation - W 0 50 100 150 200 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 0.01 0.1 100 1000 0.1 1 10 100 TC=25℃ Single Pulse ID(pulse) =60 A ID(DC) =30A Power Dissipation Limited Secondary Breakdown Limited VDS - Drain to Source Voltage – V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(t) - Transient Thermal Resistance - C/W 0.01 0.1 100 1000 Rth(ch-A) = 150 °C/W Rth(ch-C) = 3.37 °C/W One channel operation Single pulse Mounted on glass epoxy substrate of 40 mm x 40 mm x 1.6 mmt with 4% copper area(35m) PW - Pulse Width - s 100 1 m 10 m 100 m 1 10 100 1000
R07DS1330EJ0200 Rev.2.00 Page 5 of 7 May 24, 2018 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A Pulsed VGS=10V VDS - Drain to Source Voltage - V ID - Drain Current - A 0.001 0.01 0.1 100 0 1 2 3 4 5 VDS = 10V Pulsed TA=175°C 125 °C 75°C 25°C -40°C -55°C VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(th) – Gate to Source Threshold Voltage - V -100 -50 0 50 100 150 200 VDS = VGS ID=250A Tch - Channel Temperature - C | yfs | - Forward Transfer Admittance - S 100 0.1 1 10 100 VDS = 5V Pulsed TA=175°C 125°C 75°C 25°C -40°C -55°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m 0.1 1 10 100 Pulsed VGS=10V ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - m 0 5 10 15 20 Pulsed ID= 6A 15A 30A VGS - Gate to Source Voltage - V
R07DS1330EJ0200 Rev.2.00 Page 6 of 7 May 24, 2018 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m -100 -50 0 50 100 150 200 Pulsed VGS=10V ID=15A Tch - Channel Temperature - C Ciss, Coss, Crss - Capacitance - pF TransferAdmittance - S 100 1000 10000 0.01 0.1 1 10 100 VGS = 0V f = 1.0MHz Crss Ciss Coss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS td(on),tr,td(off),tr – Switching Time - ns 100 1000 0.1 1 10 100 VDD = 30V VGS=10V RG=0Ω td(on) tr td(off) tf ID - Drain Current - A VDS - Drain to Source Voltage - V 0 2 4 6 8 10 12 14 16 18 VDD= 48V 30V 12V ID=30A VDS VGS QG - Gate Charge - nC VGS - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT IF - Diode Forward Current - A 0.1 100 Pulsed VGS=10V VGS=0V VF(S-D) - Source to Drain Voltage - V trr – Reverse Recovery Time - ns 100 0.1 1 10 100 di/dt = 100A/μs VGS = 0V IF - Drain Current - A
R07DS1330EJ0200 Rev.2.00 Page 7 of 7 May 24, 2018 Package Drawings (Unit: mm) 8-pin HSON Dual (Mass: 0.12 g TYP.) Renesas package code: PLSN0008DA-A
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Description
1.00 Mar 28, 2016 — First Edition Issued
2.00 May 24,2018 2
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