NP2502R NAINA | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Features
- Low Leakage
- Low Forward Voltage Drop
- Low Cost
- High Surge Current Capability Mechanical Characteristics
- Chip : Gpp chip
- Encapsulation: Epoxy Sealed
- Lead: Plated Lead, Solderable
- Mounting: Press Fit
- Weight : 6.5 grams (approx.) Electrical Characteristics (T A = 25 0C unless otherwise specified) Parameter Symbol NP2502(R) NP2504(R) NP2506(R) Units Maximum repetitive peak reverse voltage VRRM 200 400 600 V Maximum RMS Voltage VRMS 140 280 420 V Maximum DC Blocking Voltage VDC 200 400 600 V Maximum average forward output current @ T A = 1050C IF(AV) 25 A Peak forward surge current (8.3ms) single half sine-wave superimposed on rated load IFSM 300 A Maximum instantaneous forward voltage drop @ 100 A VF 1.0 V Maximum DC reverse current at rated DC blocking voltage TA = 25 0C IR 5.0 µA TA = 100 0C 450 Typical Thermal Resistance Rθ(j-c) 0.8 oC/W Operating and storage temperature TJ, T STG -65 to +175 oC PRESS -FIT DIODE
Naina Semiconductor Ltd. NP2502(R) thru NP2506(R)
2 D-95, Sector 63, Noida – 201301, India • Tel: 012 0-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com Package Outline (All dimensions in mm) Ordering Table NP 25 02 R 1 2 3 4 – Press-fit Diode 2 – Current Rating = IF (AV) 3 – Voltage, VRRM (as per table) 4 – Polarity: > None = Normal (Cathode to Base) (Red Color Epoxy) > R = Reverse (Anode to Base) (Black Color Epoxy) PACKAGE A PACKAGE B