NP109N04PUG-E1-AY

NP109N04PUG NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR NP109N04PUG SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D18590EJ2V0DS00 (2nd edition) Date Published December 2007 NS Printed in Japan 2007 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

DESCRIPTION

The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER LEAD PLATING PACKING PACKAGE NP109N04PUG-E1-AY Note NP109N04PUG-E2-AY Note Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZP) typ. 1.5 g Note Pb-free (This product does not contain Pb in external electrode).

FEATURES

• Super low on-state resistance R DS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A)
• High current rating ID(DC) = ±110 A ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS 40 V Gate to Source Voltage (VDS = 0 V) V GSS ±20 V Drain Current (DC) (TC = 25°C) I D(DC) ±110 A Drain Current (pulse) Note1 ID(pulse) ±440 A Total Power Dissipation (TC = 25°C) P T1 220 W Total Power Dissipation (TA = 25°C) P T2 1.8 W Channel Temperature T ch 175 °C Storage Temperature T stg −55 to +175 °C Repetitive Avalanche Current Note2 IAR 60 A Repetitive Avalanche Energy Note2 EAR 360 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance R th(ch-C) 0.68 °C/W Channel to Ambient Thermal Resistance R th(ch-A) 83.3 °C/W (TO-263)

Data Sheet D18590EJ2V0DS 2 NP109N04PUG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS V DS = 40 V, VGS = 0 V 1 μA Gate Leakage Current I GSS V GS = ±20 V, VDS = 0 V ±100 nA Gate to Source Threshold Voltage V GS(th) V DS = VGS, ID = 250 μA 2.0 3.0 4.0 V Forward Transfer Admittance | y fs | V DS = 10 V, ID = 55 A 31 63 S Drain to Source On-state Resistance R DS(on) V GS = 10 V, ID = 55 A 1.7 2.3 m Ω Input Capacitance C iss V DS = 25 V, 10500 15750 pF Output Capacitance C oss V GS = 0 V, 980 1470 pF Reverse Transfer Capacitance C rss f = 1 MHz 630 1140 pF Turn-on Delay Time t d(on) V DD = 20 V, ID = 55 A, 47 103 ns Rise Time t r V GS = 10 V, 35 70 ns Turn-off Delay Time t d(off) R G = 0 Ω 90 180 ns Fall Time t f 35 70 ns Total Gate Charge Q G V DD = 32 V, 180 270 nC Gate to Source Charge Q GS V GS = 10 V, 44 nC Gate to Drain Charge Q GD I D = 110 A 64 nC Body Diode Forward Voltage V F(S-D) I F = 110 A, VGS = 0 V 0.9 1.4 V Reverse Recovery Time t rr I F = 110 A, VGS = 0 V, 56 ns Reverse Recovery Charge Q rr di/dt = 100 A/ μs 80 nC TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. RL VDD TEST CIRCUIT 2 SWITCHING TIME RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS τ = 1 s Duty Cycle ≤ 1% τ VGS Wave Form VDS Wave Form VGS VDS 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10% μ <R> <R> <R>

Data Sheet D18590EJ2V0DS 3 NP109N04PUG TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 100 120 0 25 50 75 100 125 150 175 TC - Case Temperature - °C PT - Total Power Dissipation - W 100 150 200 250 0 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 0.1 100 1000 0.1 1 10 100 ID(DC) ID(pulse) RDS(on) Limited (VGS = 10 V) TC = 25°C Single pulse 1 im i s 1i0 m i s PW = 1i00 μs Secondary Breakdown Limited Power Dissipation Limited DC VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 0.01 0.1 100 Rth(ch-A) = 83.3°C/Wi Rth(ch-C) = 0.68°C/Wi Single pulse PW - Pulse Width - s 100 μ 1 m 10 m 100 m 1 10 100 1000

Data Sheet D18590EJ2V0DS 4 NP109N04PUG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 100 200 300 400 500 0 0.2 0.4 0.6 0.8 1 VGS = 10 V Pulsed VDS - Drain to Source Voltage - V ID - Drain Current - A 0.1 100 1000 0123456 VDS = 10 V Pulsed Tch = −55°C 25°C 75°C 150°C 175°C VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(th) - Gate to Source Threshold Voltage - V 0.5 1.5 2.5 3.5 -100 -50 0 50 100 150 200 VDS = VGS ID = 250 μA Tch - Channel Temperature - °C | y fs | - Forward Transfer Admittance - S 0.1 100 0.1 1 10 100 VDS = 10 V Pulsed Tch = −55°C 25°C 75°C 150°C 175°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 1 10 100 1000 VGS = 10 V Pulsed ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 0 5 10 15 20 ID = 55 A Pulsed VGS - Gate to Source Voltage - V

Data Sheet D18590EJ2V0DS 5 NP109N04PUG DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ -100 -50 0 50 100 150 200 Pulsed VGS = 10 V ID = 55 A Tch - Channel Temperature - °C Ciss, Coss, Crss - Capacitance - pF 100 1000 10000 100000 0.01 0.1 1 10 100 VGS = 0 V f = 1 MHz Ciss Coss Crss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 100 1000 0.1 1 10 100 VDD = 20 V VGS = 10 V RG = 0 Ω td(off) td(on) tr tf ID - Drain Current - A VDS - Drain to Source Voltage - V 0 50 100 150 200 VDS ID = 110 A VGS VDD = 32 V 20 V 8 V QG - Gate Charge - nC VGS - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT IF - Diode Forward Current - A 0.1 100 1000 0 0.5 1 1.5 VGS = 10 V 0 V Pulsed VF(S-D) - Source to Drain Voltage - V trr - Reverse Recovery Time - ns 100 0.1 1 10 100 1000 di/dt = 100 A/μs VGS = 0 V IF - Diode Forward Current - A <R>

Data Sheet D18590EJ2V0DS 6 NP109N04PUG PACKAGE DRAWING (Unit: mm) TO-263 (MP-25ZP) No plating 7.88 MIN. 2.540.75 ±0.2 0.5 9.15 ±0.3 8.0 TYP. 2.54 ±0.25 15.25 ±0.5 1.35 ±0.3 213 2.5 4.45 ±0.2 1.3 ±0.2 0.6 ±0.2 0 to 8˚ 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.025 to 0.25 0.25 10.0 ±0.3 EQUIVALENT CIRCUIT Source Body DiodeGate Drain Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.

Data Sheet D18590EJ2V0DS 7 NP109N04PUG TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Reel sideDraw-out side MARKING INFORMATION NEC Pb-free plating marking 109N04 UG Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS The NP109N04PUG should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Soldering Conditions Recommended Condition Symbol Infrared reflow Maximum temperature (Package's surface temperature): 260 °C or below Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less IR60-00-3 Partial heating Maximum temperature (Pin temperature): 350 °C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less P350 Caution Do not use different soldering methods together (except for partial heating).

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