NP-SAMC ONSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Features
- Ultra Low − Micro Capacitance
- Low Leakage (Transparent)
- High Surge Current Capabilities
- Precise Turn on V oltages
- Low V oltage Overshoot
- These are Pb−Free Devices Typical Applications
- xDSL Central Office and Customer Premise
- T1/E1
- Other Broadband High Speed Data Transmission Equipment
ELECTRICAL CHARACTERISTICS
VDRM V(BO) CO, 2 V,
1 MHz
CO, 50 V, V V pF (Max) pF (Max) NP0640SAMCT3G /C003458 /C003477 18 8 NP0720SAMCT3G /C003465 /C003488 18 8 NP0900SAMCT3G /C003475 /C003498 18 8 NP1100SAMCT3G /C003490 /C0034130 18 8 NP1300SAMCT3G /C0034120 /C0034160 18 8 NP1500SAMCT3G /C0034140 /C0034180 18 8 NP1800SAMCT3G /C0034170 /C0034220 18 8 NP2100SAMCT3G /C0034180 /C0034240 18 8 NP2300SAMCT3G /C0034190 /C0034260 18 8 NP2600SAMCT3G /C0034220 /C0034300 18 8 NP3100SAMCT3G /C0034275 /C0034350 18 8 NP3500SAMCT3G /C0034320 /C0034400 18 8 G in part number indicates RoHS compliance Other protection voltages are available upon request Symmetrical Protection − Values the same in both negative and positive excursions (See V−I Curve on page 3) This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. ULTRA LOW CAPACITANCE BIDIRECTIONAL SURFACE MOUNT THYRISTOR 50A, 10x1000/C0109s SURGE TR SMB JEDEC DO−214AA CASE 403C A = Assembly Location Y = Year WW = Work Week xxx = Specific Device Code (NPxxx0SAMC) /C0071 = Pb−Free Package (Note: Microdot may be in either location) MARKING DIAGRAM AYWW xxxAM/C0071 /C0071 http://onsemi.com Device Package Shipping †
ORDERING INFORMATION
(Pb−Free)
2500 Tape &
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
NP−SAMC Series http://onsemi.com SURGE RATINGS IPPS A ITSM A di/dt Waveform (/C0109s) 2x10 8x20 10x160 10x560 10x360 10x1000 5x310 0.1 s 60 Hz A//C0109s Value 150 150 90 50 75 50 75 20 500 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Rating Value Unit VDRM Repetitive peak off−state voltage: Rated maximum (peak) continuous voltage that may be applied in the off−state conditions including all dc and repetitive alternating voltage components. NP0640SAMCT3G /C003658 V NP0720SAMCT3G /C003665 NP0900SAMCT3G /C003675 NP1100SAMCT3G /C003690 NP1300SAMCT3G /C0036120 NP1500SAMCT3G /C0036140 NP1800SAMCT3G /C0036170 NP2100SAMCT3G /C0036180 NP2300SAMCT3G /C0036190 NP2600SAMCT3G /C0036220 NP3100SAMCT3G /C0036275 NP3500SAMCT3G /C0036320 IPPS Nonrepetitive peak pulse current: Rated maximum value of peak impulse pulse current that may be applied. 2x10 /C0109s, GR−1089−CORE 150 A 8x20 /C0109s, IEC−61000−4−5 150 10x160 /C0109s, TIA−968−A 90 10x560 /C0109s, TIA−968−A 50 10x360 /C0109s, GR−1089−CORE 75 10x1000 /C0109s, GR−1089−CORE 50 5x310 /C0109s, ITU−K.20/K.21/K.45 75 ITSM Nonrepetitive peak on−state current: Rated maximum (peak) value of ac power frequency on−state surge current which may be applied for a specified time or number of ac cycles. 0.1s, 50/60 Hz, full sine wave 20 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
NP−SAMC Series http://onsemi.com ELECTRICAL CHARACTERISTICS TABLE (TA = 25°C unless otherwise noted) Symbol Rating Min Typ Max Unit V(BO) Breakover voltage: The maximum voltage across the device in or at the breakdown region. VDC = 1000 V, dv/dt = 100 V//C0109s NP0640SAMCT3G /C003677 V NP0720SAMCT3G /C003688 NP0900SAMCT3G /C003698 NP1100SAMCT3G /C0036130 NP1300SAMCT3G /C0036160 NP1500SAMCT3G /C0036180 NP1800SAMCT3G /C0036220 NP2100SAMCT3G /C0036240 NP2300SAMCT3G /C0036260 NP2600SAMCT3G /C0036300 NP3100SAMCT3G /C0036350 NP3500SAMCT3G /C0036400 I(BO) Breakover Current: The instantaneous current flowing at the breakover voltage. 800 mA IH Holding Current: The minimum current required to maintain the device in the on−state. 150 mA IDRM Off−state Current: The dc value of current that results from the applica- tion of the off−state voltage VD = 50 V 2 /C0109A VD = VDRM 5 VT On−state Voltage: The voltage across the device in the on−state condition. IT = 2.2 A (pk), PW = 300 /C0109s, DC = 2% 4 V dv/dt Critical rate of rise of off−state voltage: The maximum rate of rise of voltage (below VDRM) that will not cause switching from the off−state to the on−state. Linear Ramp between 0.1 VDRM and 0.9 VDRM ±5 kV//C0109s di/dt Critical rate of rise of on−state current: rated value of the rate of rise of current which the device can withstand without damage. ±500 A//C0109s CO Off−state Capacitance f = 1.0 MHz, Vd = 1.0 VRMS, VD = −2 Vdc NP0640SAMCT3G 18 pF NP0720SAMCT3G 18 NP0900SAMCT3G 18 NP1100SAMCT3G 18 NP1300SAMCT3G 18 NP1500SAMCT3G 18 NP1800SAMCT3G 18 NP2100SAMCT3G 18 NP2300SAMCT3G 18 NP2600SAMCT3G 18 NP3100SAMCT3G 18 NP3500SAMCT3G 18 THERMAL CHARACTERISTICS Symbol Rating Value Unit TSTG Storage Temperature Range −65 to +150 °C TJ Junction Temperature −40 to +150 °C R0JA Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06” Fan out in a 3x3 inch pattern, 2 oz copper track. 90 °C/W
NP−SAMC Series http://onsemi.com PACKAGE DIMENSIONS A S D B JPK C H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.160 0.180 4.06 4.57 B 0.130 0.150 3.30 3.81 C 0.075 0.095 1.90 2.41 D 0.077 0.083 1.96 2.11 H 0.0020 0.0060 0.051 0.152 J 0.006 0.012 0.15 0.30 K 0.030 0.050 0.76 1.27 P 0.020 REF 0.51 REF S 0.205 0.220 5.21 5.59 SMB CASE 403C−01 ISSUE A *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* /C0466mm inches/C0467SCALE 8:1 2.743 0.108 2.159 0.085 2.261 0.089 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems in tended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resa le in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 NP0640SC/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your loca l Sales Representative