NP0080TA ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Low Nominal Capacitance
  • Extremely Low Differential Capacitance
  • Low Leakage (Transparent)
  • High Surge Capability
  • Precise Clamping V oltage
  • Small Package Size
  • Bi−directional Operation
  • Flow Thru Layout
  • IEC 61000−4−2 Level 4 ESD protection
  • These are Pb−Free Devices Typical Applications
  • VDSL, ADSL, Access, Central Office, and Customer Premise modems and gateway IC side line driver chipset protection
  • 10/100/1000 Ethernet Protection
  • RS−232, RS−485 Transceiver Protection

ELECTRICAL CHARACTERISTICS

IR@ VR=VRWM VR = 2 V /C0068/C0053C

0 V−VRWM

(V) (V) (/C0109A) (pF) (pF) NP0080TAT1G 8 9.5 0.5 13 4 NP0120TAT1G 12 12.5 0.5 11 3 NP0160TAT1G 16 18 0.5 11 3 SURGE/ESD RATINGS Waveform 8x20/C0109A ESD Air ESD Contact Value 50 A 15 kV 8 kV PIN CONNECTIONS (Top View) MARKING DIAGRAM http://onsemi.com xxA = Specific Device Code (NP0xx0TAT1G) D = Date Code /C0071 = Pb−Free Package TSOP−5 SN SUFFIX CASE 483 (Note: Microdot may be in either location) See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

/C0071

http://onsemi.com ELECTRICAL CHARACTERISTICS TABLE (TA = 25°C unless otherwise noted) Symbol Rating Min Typ Max Unit VRWM Repetitive peak off−state voltage: Rated maximum (peak) continuous voltage that may be applied in the off−state condition NP0080TAT1G ±8 V NP0120TAT1G ±12 NP0160TAT1G ±16 VBR1 Breakdown Voltage: The minimum voltage across the device in or at the breakdown region. Measured at I BR = 1 mA NP0080TAT1G 9.5 V NP0120TAT1G 12.5 NP0160TAT1G 18 V(BO) Breakover Voltage: The maximum voltage across the device in or at the breakover region. Measured at I (BO) = 800 mA NP0080TAT1G 20 V NP0120TAT1G 30 NP0160TAT1G 40 IR Off−state Current: The dc value of current that results from the application of the off−state voltage 0.5 /C0109A IH Holding Current: The minimum current required to maintain the device in the on−state. 50 mA Co Off−State Capacitance: f = 1.0 MHz, Vd = 1.0 Vrms, VD = −2 Vdc NP0080TAT1G 13 pF NP0120TAT1G 11 NP0160TAT1G 11 /C0068C1 /C0068 Capacitance: f = 1.0 MHz, Vd = 1.0 Vrms, VD = | 0 V – Vrwm| NP0080TAT1G 4 pF NP0120TAT1G 3 NP0160TAT1G 3 IPPS Peak Pulse Current: Rated maximum value of peak impulse pulse current that may be applied. 8x20 /C0109s, IEC/C004261000/C00424/C00425 50 A ESD Electrostatic Discharge: Rated maximum value of ESD per IEC−61000−4−2 Contact 8 kV Air 15 TSTG Storage Temperature Range −55 +150 °C TJ Operating Junction Temperature Range −40 +125 °C

http://onsemi.com Symbol Parameter VRWM Repetitive peak off−state voltage VBR Breakdown voltage V(BO) Breakover voltage IR Off−state current IH Holding current Protection Region +V−V Figure 1. IR IH VRWM V(BO) VBR Protection RegionOff−State Region (Transparent)

Application Information

The NPXXXXTAT can be used after the isolation transformer as protection for the xDSL line driver. The devices can be configured to protect against both differential and common mode surges and ESD. Figure 2. LINE DRIVER NP0080TAT TIP RING Figure 3. LINE DRIVER NP0080TAT TIP RING NP0080TAT Figure 4. LINE DRIVER NP0080TAT TIP RING NP0080TAT NP0080TAT 1. Connect pin 1 to pin 5 on PCB 2. Connect pin 3 to pin 4 on PCB 3. Pin 2 is no connection

5 PCB Trace

Figure 5. PCB Layout

http://onsemi.com DEVICE ORDERING INFORMATION Device Package Shipping† NP0080TAT1G TSOP−5 (Pb−Free) 3000 / Tape & Reel NP0120TAT1G TSOP−5 (Pb−Free) 3000 / Tape & Reel NP0160TAT1G TSOP−5 (Pb−Free) 3000 / Tape & Reel †For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com PACKAGE DIMENSIONS TSOP−5 CASE 483−02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. DIM MIN MAX MILLIMETERS A 3.00 BSC B 1.50 BSC C 0.90 1.10 D 0.25 0.50 G 0.95 BSC H 0.01 0.10 J 0.10 0.26 K 0.20 0.60 L 1.25 1.55 M 0 10 S 2.50 3.00 12 3 S A G L B D H C J /C0095/C0095 0.7 0.028 1.0 0.039 /C0466mm inches/C0467SCALE 10:1 0.95 0.037 2.4 0.094 1.9 0.074 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* 0.20 C ABT0.102X 2X T0.20 NOTE 5 T SEATING PLANE0.05 K M DETAIL Z DETAIL Z ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems in tended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resa le in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 NP0080TA/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your loca l Sales Representative