NHD035C

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R07DS1162EJ0200 Rev.2.00 Page 1 of 40 May 22, 2015 Datasheet µPD166028T1K INTELLIGENT POWER DEVICE 1. Overview

1.1 Description

Family: µPD166028T1K is part of 2nd Generation Intelligent Power Devices (IPD). This is N-channel high-side switches with charge pump, voltage controlled input, diagnostic feedback with proportional load current sense and embedded protection function. Family includes up to 14 devices depending on on-state resistance, package and channel number combination. Scalability: Variety of on-state resistance combined with standardized package on pin-out give user high flexibility for unit design depending on target load. Robustness: Because of advanced protection method, 2nd Generation Intelligent Power Devices achieve high robustness against long term and repetitive short circuit condition.

1.2 Features

• Built-in charge pump
• 3.3V compatible logic interface
• Low standby current
• Short circuit protection  Shutdown by over current detection  Power limitation protection by over load detection (Power limitation: current limitation with delta Tch control)  Absolute Tch over temperature protection
• Built-in diagnostic function  Proportional load current sensing  Defined fault signal in case of abnormal load condition
• Loss of ground protection
• Under voltage lock out
• Active clamp operation at inductive load switch off
• AEC Qualified
• RoHS compliant

1.3 Application

• Light bulb switching from 21W to 27W
• Switching of all types of 14V DC grounded loads, such as LED, inductor, resistor and capacitor
• Power supply switch, fail-safe switch of 14V DC grounded system Note: The information contained in this document is the one that was obtained when the document was issued, and may be subject to change. R07DS1162EJ0200 Rev.2.00 May 22, 2015

µPD166028T1K Datasheet 2. Ordering Information R07DS1162EJ0200 Rev.2.00 Page 2 of 40 May 22, 2015 2. Ordering Information Part No. Nick name Lead plating Packing Package UPD166028T1K-E1-AY NHQ035C Pure Matte Sn Tape 1500 p/reel 24-pin Power HSSOP UPD166028T1K-E2-AY NHQ035C Pure Matte Sn Tape 1500 p/reel 24-pin Power HSSOP Note: Part No. and Nick name are tentative and might change at anytime without notice. MSL: 1, profile acc. J-STD-20C

2.1 Nick name

A: TO252-7 B: 12-pin Power HSSOP C: 24-pin Power HSSOP On-state resistance S: Single channel D: Dual channel Q: Quad channel Nch High-side

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 3 of 40 May 22, 2015 3. Specification

3.1 Block Diagram

3.1.1 Nch High-side Quad Device

Voltage and Current Definition

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 4 of 40 May 22, 2015

3.2 Pin Configuration

3.2.1 24-pin Power HSSOP Pin Configuration Pin No. Terminal Name

1 GNDA

2 IN1

3 IS1

4 IS2

5 IN2

6 N.C.

7 GNDB

8 IN3

9 IS3

10 IS4

11 IN4

12 VCC

13 SENB

14 OUT4

15 OUT4

16 OUT3

17 OUT3

18 N.C.

19 SENA

20 OUT2

21 OUT2

22 OUT1

23 OUT1

24 VCC

Terminal Name Pin function Recommended connection GNDm Ground connection (m=A to B) Connected to GND through a 100 Ω resistor or a diode for reverse current protection Refer chapter 6. INn Input signal for channel n (n=1 to 4) Connected to MCU port through 2k-50K serial resistor. ISn Current sense and Diagnosis output signal channel n (n=1 to 4) Connected to GND through a 0.67K-5K resistor. Not connect if this pin is not used. SENm Sense enable input (m=A to B) Connected to MCU port through 2k-50K serial resistor. Not connect if this pin is not used. OUTn Protected high-side power output channel n (n=1 to 4) Connected to load with small 50-100nF capacitor in parallel. VCC Positive power supply for logic supply as well as output power supply Connected to battery voltage with small 100nF capacitor in parallel. N.C. Non connection Left open 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 Tab Tab

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 5 of 40 May 22, 2015

3.3 Absolute Maximum Ratings

Ta=25°C, unless other specified Parameter Symbol Rating Unit Test Condition Vcc Voltage VCC 28 V Vcc Voltage at reverse battery condition -VCC -16 V RL=5.4Ω, t<2min, RIN=2kΩ, RSEN=2kΩ, RIS=1kΩ RGND=100Ω GND Reverse current at reverse battery condition IGND(Rev) 200 mA RL=5.4Ω, t<2min Vcc voltage under Load Dump condition Vload dump 42 V RI=1Ω, RL=5.4Ω, RIS=1kΩ, RIN=2kΩ, RSEN=2kΩ, RGND=100Ω, td=400ms Load Current IL Self limited A Total power dissipation for whole device (DC) PD 2.16 W Ta=85°C, Device on 50mm×50mm×1.5mm epoxy PCB FR4 with 6 cm2 of 70 µm copper area Voltage at IN pin VIN -2 ~ 16 V DC RIN=2kΩ -16 At reverse battery condition, t<2min, RIN=2kΩ, RSEN=2kΩ IN pin current IIN 10 mA DC Voltage at IS pin VIS VCC V DC RIS=1kΩ -16 V At reverse battery condition, t<2min, RL=5.4Ω, RIS=1kΩ IS Reverse current at reverse battery condition IIS(Rev) -30 mA At reverse battery condition, t<2min, RL=5.4Ω Voltage at SEN pin VSEN -2 ~ 16 V DC RSEN=2kΩ -16 At reverse battery condition, t<2min RIN=2kΩ, RSEN=2kΩ SEN pin current ISEN 10 mA DC Channel Temperature Tch -40 to +150 °C Storage Temperature Tstg -55 to +150 °C ESD susceptibility VESD 2000 V HBM AEC-Q100-002 std. R=1.5kΩ, C=100pF All pin 4000 IEC61000-4-2 std. R=330Ω, C=150pF, 100nF at VCC and OUT VCC, OUT 200 V MM AEC-Q100-003 std. R=0Ω, C=200pF Inductive load switch-off energy dissipation single pulse EAS 35 mJ VCC=13.5V, Tch,start<150°C, RL=5.4Ω Inductive load switch-off energy dissipation repetitive pulse EAR 25 mJ VCC=13.5V, Tch,start=85°C, RL=5.4Ω Remark) All voltages refer to ground pin of the device

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 6 of 40 May 22, 2015

3.4 Thermal Characteristics

Parameter Symbol Min Typ Max Unit Test Condition Thermal characteristics Rth(ch-a) 30 °C /W According to JEDEC JESD51-2, -5, -7 on FR4 2s2p board Rth(ch-c) 1.0 °C/W

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 7 of 40 May 22, 2015

3.5 Electrical Characteristics

Tch=-40 to 150°C, Vcc=7 to 18V, unless otherwise specified Parameter Symbol Min Typ Max Unit Test Condition Operating Voltage V CC 4 .5 28 V V IN=4.5V RL=5.4Ω Operating current per channel IGND 2.2 4 mA VIN=4.5V Output Leakage current per channel IL(off) 0.5 µA Tch=25°C VCC=13.5V, VIN=0V, VSEN=0V, VIS=0V, VOUT=0V, VGND=0V

3 Tch=-40~125°C

Standby current ICC(off) 0.7 µA Tch=25°C VCC=13.5V, VIN=0V, VSEN=0V, VIS=0V, VOUT=0V, VGND=0V

4 Tch=-40~85°C

Ron 35 mΩ Tch=25°C, IL=2.5A 80 Tch=150°C, IL=2.5A Low level IN pin voltage VIL 0.8 V High level IN pin voltage VIH 2.5 V Low level IN pin current IIL 2 25 µA VIN=0.8V High level IN pin current IIH 2 25 µA VIN=2.5V Clamping IN pin voltage 1) VZIN 5 6 V Low level SEN pin voltage VSENL 0.8 V High level SEN pin voltage VSENH 2.5 V Low level SEN pin current ISENL 2 25 µA VSEN=0.8V High level SEN pin current ISENH 2 25 µA VSEN=2.5V Clamping SEN pin voltage1) VZSEN 5 6 V Under voltage shutdown VCC(Uv) 4.5 V Under voltage restart VCC(Cpr) 5.0 V Turn on time ton 200 µs VCC=13.5V, RL=5.4Ω Turn on delay time td(on) 100 µs Turn off time toff 200 µs Turn off delay time td(off) 150 µs Slew rate on dV/dton 1.5 V/µs Slew rate off -dV/dtoff 1.5 V/µs Switching drift1) ton-toff -50 +50 µs Vcc = 9 to 18V drift from Vcc=13.5V, Tch=-40 to 150°C drift from Tch=25°C ton; Vout=Vcc-1.5V after input signal active Turn on energy loss 1) Eon 0.3 0.6 mJ VCC=13.5V,Tch=25°C, RL=5.4Ω Turn off energy loss 1) Eoff 0.3 0.6 mJ Driving capability 1) Dr(capa) 300 mΩ Tch=25°C, VCC=8~16V

350 Tch=105°C, VCC=8~16V

Remark) All voltages refer to ground pin of the device 1) not subjected production test, guaranteed by design

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 8 of 40 May 22, 2015 Protection function Tch=-40 to 150°C, Vcc=7 to 18V, unless otherwise specified Parameter Symbol Min Typ Max Unit Test Condition Over current detection current IL(SC) 35 50 A VCC=13.5V, Von=5V, Tch=25°C Current limitation under power limitation toggling IL(CL) 20 A VCC=13.5V Current limitation under absolute thermal toggling IL(TT) 8 A VCC=13.5V Current limitation trigger threshold during turn-on Von(CL1) 2.0 V VCC=13.5V Current limitation trigger threshold during on-state Von(CL2) 0.8 V VCC=13.5V Absolute thermal shutdown temperature aTth 150 °C Thermal hysteresis for absolute thermal toggling aTth,hys 20 °C Power limitation thermal shutdown temperature dTth 60 °C Power limitation restart temperature dTth,rest art 30 °C Output clamp at inductive load switch off Von,clam p 30 40 V VCC=13.5V, IL=40mA, Tch=25°C Output current while GND disconnection IL(GND) 1 mA IIN=0A, ISEN=0A, IGND=0A, IIS=0A Output voltage drop at reverse battery condition Vds(rev) 0.9 V Tch=25°C VCC=-13.5V, RL=5.4Ω 0.7 Tch=150°C Remark) All voltages refer to ground pin of the device

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 9 of 40 May 22, 2015 Diagnosis function Tch=-40 to 150°C, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified Parameter Symbol Min Typ Max Unit Test Condition Current sense ratio KILIS 2720 3400 4080 IL=2.5A 2380 3400 4420 IL=0.5A Current sense drift depend on temperature dKILIS -15 15 % VCC=13.5V, Tch,start=25°C, RL=5.4Ω Sense current offset current Iis,offset 2 µA IL<10mA Sense current leakage current Iis,dis 1 µA VIN=0V, VSEN=0V Sense current under fault condition Iis,fault 3 9.5 mA VCC=13.5V, RIS=0.67kΩ 3.5 9 VCC=13.5V, RIS=1kΩ 3.5 5.5 VCC=13.5V, RIS=2kΩ Minimum output current for current sense output IL(CSE) 10 50 mA IIS>5µA Open load detection threshold at off-state VOUT(OL) 2.0 5.0 V VIN=0V, Tch=-40~105°C OUT terminal current at Open load condition IOUT(OL) -1.0 µA VIN =0V Open load detection delay after input negative slope tdop 300 µs VIN=4.5V to 0V, VOUT>VOUT(OL) Remark) All voltages refer to ground pin of the device

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 10 of 40 May 22, 2015 Diagnosis function Tch=-40 to 150°C, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified Parameter Symbol Min Typ Max Unit Test Condition Sense current settling time after input signal positive slope tsis(on) 250 µs VCC=13.5V, VIN=0V to 4.5V, IL/IIS=KILIS, RL=5.4Ω Sense current settling time after input signal negative slope 1) tsis(off) 10 µs VIN=4.5V to 0V Sense current settling time after sense enable during on-state 1) tssen(on) 20 µs VSEN=0V to 4.5V, RL=5.4Ω Sense current settling time after sense disable during on-state 1) tssen(off) 20 µs VSEN=4.5V to 0V, RL=5.4Ω Sense current settling time during on-state 1) tsis(LC) 20 µs RL=5.4Ω to 2.7Ω Fault signal delay after over current detection 1) tdsc(fault) 10 µs VIN=0V to 4.5V, IL=IL(SC) Fault signal delay after power limitation valid 1) tdpl(fault) 10 µs Von>Von(CL1) Fault signal delay after power limitation invalid 1) tdpl(off) 30 µs Von<Von(CL1) Fault signal delay after absolute thermal shutdown tdot(fault) 10 µs IIS→IIS,fault Fault signal delay after open load detection at off- state 1) tdop(fault) 10 µs VIN=0V, VOUT>VOUT(OL) Fault signal delay after input negative slope 1) tdoff(fault) 10 µs VIN=4.5V to 0V Remark) All voltages refer to ground pin of the device 1) not subjected production test, guaranteed by design

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 11 of 40 May 22, 2015

3.6 Feature Description

3.6.1 Driving Circuit

The high-side output is turned on, if the input pin is over VIH. The high-side output is turned off, if the input pin is open or the input pin is below VIL. Threshold is designed between VIH min and VIL max with hysteresis. IN terminal is pulled down with constant current source. Switching a resistive load Switching lamps VIN VOUT IL Vcc t IIS VIN VOUT IL t IIS VOUT Vcc 0 t ON ON OFF OFF IN GND RESD IIN Internal ground VIN

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 12 of 40 May 22, 2015 Switching an inductive load The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off, the voltage of OUT falls below 0V. The gate voltage of SW1 is then nearly equal to GND. Next, the voltage at the source of SW1 (= gate of output MOS) falls below the GND voltage. SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit. When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND. SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit is not activated. GND OUT ZDAZ VCC Internal ground logic RESD RESD ZDESD IN SEN SW1 IS ZDAZ Vcc Von,clamp VIN VOUT IL t IIS

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 13 of 40 May 22, 2015

3.6.2 Device behavior at over voltage condition

In case of supply voltage greater than Vload dump, logic part is clamped by ZDAZ (35V min). And current through of logic part is limited by external ground resistor. In addition, the power transistor switches off in order to protect the load from over voltage. Permanent supply voltage than Vload dump must not be applied to VCC. IPDuC RL VCC ISGND RISRGND IN SEN OUT RIN RSEN N-ch MOSFET logic Internal ground ZDAZ ZDAZ ZDESD RESD RESD ZDESD

3.6.3 Device behavior at low voltage condition

If the voltage supply (V CC) goes down under V CC(Uv), the device outputs shuts down. If voltage supply (V CC) increase over VCC(Cpr), the device outputs turns back on automatically. The device keeps off state after under voltage shutdown. The IS output is cleared during off-state.

3.6.4 Loss of Ground protection

In case of complete loss of the device ground connection, but connected load ground, the device securely changes to off if VIN was initially greater than VIH state or keeps off state if VIN was initially lower than VIL state. In case of device loss of ground, IN and SEN terminal will/ could/ might be at VCC voltage. VIN IL VCC 0 t VOUT VCC(Uv) VCC(CPr)

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 14 of 40 May 22, 2015

3.6.5 Short circuit protection

Turn-on in an over load condition including short circuit condition The device shuts down automatically when condition (a) is detected. The sense pin output Iis,fault. Shutdown is latched until the next reset via input pin. The device shuts down automatically when condition (b) is detected. The device restarts automatically when device cooling to dTch,restart. The output current is limited by output power MOSFET saturation current. The device shuts down automatically when condition (c) is detected and restarts automatically in absolute thermal toggling mode. The sense pin output Iis,fault during power limitation mode or thermal toggling mode. In case of device shutdown by (c) detection but also (b) condition, the output current is limited by IL(CL). (a) IL > IL(SC) (b) deltaTch > dTth (c) Tch > aTth Over load condition including short circuit condition during on-state The device runs automatically into power limitation mode when condition (a) is detected once after Von < Von(CL2). The device shuts down automatically when condition (b) is detected. The device restarts automatically in power limitation mode. The device shuts down automatically when condition (c) is detected and restarts automatically in absolute thermal toggling mode. The sense pin output Iis,fault during power limitation mode or thermal toggling mode. (a) Von > Von(CL2) (b) deltaTch > dTth (c) Tch > aTth Power limitation control Current limitation control with IL(CL) when auto restart from deltaTch protection. During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from delta Tch protection, if Von<Von(CL2) depends on short circuit impedance condition, the device does not operate as current limitation with IL(CL). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during toggling operation with power limitation mode. Absolute thermal toggling Current limitation control with IL(TT) when auto restart from absolute Tch protection. During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from absolute Tch protection, if Von<Von(CL2) depends on short circuit impedance condition, the device does not operate as current limitation with IL(TT). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during toggling operation with thermal toggling mode. delta Tch Junction temperature differences between thermal sensor of power area and thermal sensor of control area.

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 15 of 40 May 22, 2015

3.6.6 Device behavior at reverse current conduction during on-state

During on-state(VIN>VIH) the device might shut down automatically when Vout>Vcc+0.3V is detected. And the sense pin outputs Iis,fault if the device shuts down. If restart is required, please reset via input pin when detect the Iis.fault. VCC OUT IN GND >VIH VCC Irev IS SEN RIS Vout VIS VIN VSEN >VSENH VSEN Vout Iout VIS Iis.fault Irev Vcc t VIN

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 16 of 40 May 22, 2015 State transition diagram IN -> High Tch > Tth Shutdown IL(lim)=IL(TT) Yes Von < Von(CL1) Thermal No dTch > dTth Shutdown Yes No Shutting down Yes Thermal Return B Von < Von(CL2) Yes No No Current limitation Turn-on Thermal IL > IL(lim) No Yes Thermal IL > IL(SC) Yes Shutdown by latch IN = Low A Over current No Over current A B Over current No Yes Return Turn-on No IL > IL(NL) No Von=Von(NL) Yes Input Input IN = Low Yes No C Return C IN = Low No Yes Turn-off Thermal C C Input Input Input Yes IL(lim)=IL(CL) IL(lim)=IL(TT) IL(lim)=IL(CL) Yes No IL(lim) initial value is power MOSFET saturation current.

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 17 of 40 May 22, 2015 Turn-on in an over load condition including short circuit condition (a) IL > IL(SC) IN -> High Tch > Tth Shutdown IL(lim)=IL(TT) Yes Von < Von(CL1) Thermal No dTch > dTth Shutdown Yes No Shutting down Yes Thermal Return B Von < Von(CL2) Yes No No Current limitation Turn-on Thermal IL > IL(lim) No Yes Thermal IL > IL(SC) Yes Shutdown by latch IN = Low A Over current No Over current A B Over current No Yes Return Turn-on No IL > IL(NL) No Von=Von(NL) Yes Input Input IN = Low Yes No C Return C IN = Low No Yes Turn-off Thermal C C Input Input Input Yes IL(lim)=IL(CL) IL(lim)=IL(TT) IL(lim)=IL(CL) Yes No Before over current detection After over current detection Exit from off-latch

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 18 of 40 May 22, 2015 Turn-on in an over load condition including short circuit condition (b) deltaTch > dTth IN -> High Tch > Tth Shutdown IL(lim)=IL(TT) Yes Von < Von(CL1) Thermal No dTch > dTth Shutdown Yes No Shutting down Yes Thermal Return B Von < Von(CL2) Yes No No Current limitation Turn-on Thermal IL > IL(lim) No Yes Thermal IL > IL(SC) Yes Shutdown by latch IN = Low A Over current No Over current A B Over current No Yes Return Turn-on No IL > IL(NL) No Von=Von(NL) Yes Input Input IN = Low Yes No C Return C IN = Low No Yes Turn-off Thermal C C Input Input Input Yes IL(lim)=IL(CL) IL(lim)=IL(TT) IL(lim)=IL(CL) Yes No Before dTcht detection During shutdowning by dTth detection During current limit by saturation current Exit from current limitation control

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 19 of 40 May 22, 2015 Turn-on in an over load condition including short circuit condition (c) Tch > aTth IN -> High Tch > Tth Shutdown IL(lim)=IL(TT) Yes Von < Von(CL1) Thermal No dTch > dTth Shutdown Yes No Shutting down Yes Thermal Return B Von < Von(CL2) Yes No No Current limitation Turn-on Thermal IL > IL(lim) No Yes Thermal IL > IL(SC) Yes Shutdown by latch IN = Low A Over current No Over current A B Over current No Yes Return Turn-on No IL > IL(NL) No Von=Von(NL) Yes Input Input IN = Low Yes No C Return C IN = Low No Yes Turn-off Thermal C C Input Input Input Yes IL(lim)=IL(CL) IL(lim)=IL(TT) IL(lim)=IL(CL) Yes No Before aTcht detection During shutdowning by aTth detection During current limitation control Exit from power limitation control

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 20 of 40 May 22, 2015 An over load condition which is include a short circuit condition during on-state (a) Von > Von(CL) with weak short condition IN -> High Tch > Tth Shutdown IL(lim)=IL(TT) Yes Von < Von(CL1) Thermal No dTch > dTth Shutdown Yes No Shutting down Yes Thermal Return B Von < Von(CL2) Yes No No Current limitation Turn-on Thermal IL > IL(lim) No Yes Thermal IL > IL(SC) Yes Shutdown by latch IN = Low A Over current No Over current A B Over current No Yes Return Turn-on No IL > IL(NL) No Von=Von(NL) Yes Input Input IN = Low Yes No C Return C IN = Low No Yes Turn-off Thermal C C Input Input Input Yes IL(lim)=IL(CL) IL(lim)=IL(TT) IL(lim)=IL(CL) Yes No Before Von(CL) detection after turn on During shutdowning by dTth detection During current limitation control Exit from power limitation control After Von(CL) detection

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 21 of 40 May 22, 2015 An over load condition including short circuit condition during on-state (a) Von > Von(CL) with dead condition IN -> High Tch > Tth Shutdown IL(lim)=IL(TT) Yes Von < Von(CL1) Thermal No dTch > dTth Shutdown Yes No Shutting down Yes Thermal Return B Von < Von(CL2) Yes No No Current limitation Turn-on Thermal IL > IL(lim) No Yes Thermal IL > IL(SC) Yes Shutdown by latch IN = Low A Over current No Over current A B Over current No Yes Return Turn-on No IL > IL(NL) No Von=Von(NL) Yes Input Input IN = Low Yes No C Return C IN = Low No Yes Turn-off Thermal C C Input Input Input Yes IL(lim)=IL(CL) IL(lim)=IL(TT) IL(lim)=IL(CL) Yes No Before Von(CL) detection after turn on After over current detection Exit from power limitation control After Von(CL) detection

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 22 of 40 May 22, 2015 An over load condition including short circuit condition during on-state (b) deltaTch > dTth IN -> High Tch > Tth Shutdown IL(lim)=IL(TT) Yes Von < Von(CL1) Thermal No dTch > dTth Shutdown Yes No Shutting down Yes Thermal Return B Von < Von(CL2) Yes No No Current limitation Turn-on Thermal IL > IL(lim) No Yes Thermal IL > IL(SC) Yes Shutdown by latch IN = Low A Over current No Over current A B Over current No Yes Return Turn-on No IL > IL(NL) No Von=Von(NL) Yes Input Input IN = Low Yes No C Return C IN = Low No Yes Turn-off Thermal C C Input Input Input Yes IL(lim)=IL(CL) IL(lim)=IL(TT) IL(lim)=IL(CL) Yes No Before dTth detection after turn on During shutdowning by dTth detection Exit from thermal protection control

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 23 of 40 May 22, 2015 An over load condition including short circuit condition during on-state (c) Tch > aTth IN -> High Tch > Tth Shutdown IL(lim)=IL(TT) Yes Von < Von(CL1) Thermal No dTch > dTth Shutdown Yes No Shutting down Yes Thermal Return B Von < Von(CL2) Yes No No Current limitation Turn-on Thermal IL > IL(lim) No Yes Thermal IL > IL(SC) Yes Shutdown by latch IN = Low A Over current No Over current A B Over current No Yes Return Turn-on No IL > IL(NL) No Von=Von(NL) Yes Input Input IN = Low Yes No C Return C IN = Low No Yes Turn-off Thermal C C Input Input Input Yes IL(lim)=IL(CL) IL(lim)=IL(TT) IL(lim)=IL(CL) Yes No Before aTth detection after turn on During shutdowning by aTth detection Exit from thermal protection control

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 24 of 40 May 22, 2015

3.6.7 Device behavior at small load current conduction

The device has a function which controls Ron in order to improve KILIS accuracy at small load current conduction. Von (VCC-OUT) is proportionate to IL under normal conditions. Under IL<IL(NL) condition, Ron is controlled to increase to be Von=Von(NL)=30mV(typ). Von IL IL(NL) Von(NL)

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 25 of 40 May 22, 2015

3.6.8 Diagnostic signal

SEN Input Output Diagnostic output 2) Normal Operation H H VCC IIS = IL/KILIS L L 1) < 1µA (Iis,dis) Shutdown by over current detection H L 1) Iis,fault 3) L L 1) < 1µA (Iis,dis) Power limitation H VOUT 6) IIS = IL/KILIS in case of Von<Von(CL1) Iis,fault 4) in case of Von>Von(CL1) L 1) Iis,fault 4) L L 1) < 1µA (Iis,dis) Thermal toggling H VOUT 6) IIS = IL/KILIS in case of Von<Von(CL1) Iis,fault 5) in case of Von>Von(CL1) L 1) Iis, fault 5) L L 1) < 1µA (Iis,dis) Short circuit to VCC H VCC < 2µA (Iis,offset) L VOUT 7) Iis,fault in case of VOUT>VOUT(OL) Open Load H VCC < 2µA (Iis,offset) L VOUT 7) Iis,fault in case of VOUT>VOUT(OL) X 8) L X 8) X 8) < 1µA (Iis,dis) 1) In case of OUT terminal is connected to GND via load. 2) In case of IS terminal is connected to GND via resister. 3) IS terminal keeps Iis,fault as long as input signal activate after the over current detection. 4) IS terminal keeps Iis,fault during power limitation if Von>Von(CL1). 5) IS terminal keeps Iis,fault during thermal toggling if Von>Von(CL1).. 6) VOUT depends on the short circuit condition 7) VOUT depends on the ratio of VCC-OUT-GND resistive component. 8) Don’t care

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 26 of 40 May 22, 2015 Current sense output The device output analog feedback current proportional to output current from IS pin. In the case of much higher current than nominal load current, current sense output is saturated. In the case of much lower current than nominal load current, current sense output is above 5µA if output current is above IL(CSE) max, current sense output is below 2µA, IIS,offset max, if output current is below IL(CSE) min. Sense current under fault condition The device output IIS,fault, constant current, from IS pin under fault condition such as after over current detection, during power limitation and during thermal toggling. IIS,fault is specified with RIS=1kΩ condition. IIS,fault is attenuated depends on VCC-VIS voltage. Operation point as IIS,fault output is also depends on RIS condition. For example, In the case of RIS=1kΩ, IIS,fault could be 3.5mA to 9mA, VCC-VIS could be 4.5V to 10V, VIS could be 9V to 3.5V if VCC=13.5V. In the case of RIS is higher than 1kΩ, Operation point as IIS,fault is lower than specified value but VIS should be higher than RIS=1kΩ condition. VCC-VIS VCC IS RIS GND VCC-VIS VIS VCC IIS,fault 1kΩ load line 9mA 3.5mA VCC VCC-VIS VIS IL IIS,offset KILIS=IL/IIS IIS IL(CSE) 2µA 5µA IL IIS

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 27 of 40 May 22, 2015 Sense current settling time Fault signal delay time at over current detection VIN VOUT VSEN IIS Iis,fault tdsc(fault) Over current detection VIN VOUT VSEN IIS tsis(on) tssen(off) tssen(on) tsis(off) tsis(LC) tsis(LC)

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 28 of 40 May 22, 2015 Fault signal delay time at power limitation Fault signal delay time at Thermal toggling VIN VOUT IIS VSEN Short circuit appear Short circuit disappear tdpl(fault) Thermal toggling tdpl(off) Iis,fault tsis(off) Power limitation VIN VOUT IIS VSEN Short circuit appear Short circuit disappear tdpl(fault) Power limitation tdpl(off) Iis,fault

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 29 of 40 May 22, 2015 Iis,offset Iis,dis Fault signal delay time at open load detection VIN VOUT IIS VSEN tdop(fault) Open load detection Iis,fault tdop Open load detection Open load condition appear

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 30 of 40 May 22, 2015

3.6.9 Nominal load

NHQ035C 5.4Ω

3.6.10 Driving Capability

Driving Capability is specified as load impedance. Over current detection characteristics is designed above Driving Capability characteristics. If estimated load impedance which comes from peak inrush current is lower than Driving Capability characteristics, this means, the device does not detect inrush current as over current and does not shutdown the output. Depend on the conditions, Power Limitation function may work during inrush current. If estimated load impedance which comes from peak inrush current is lower than Driving Capability characteristics, Power limitation disappear within 30ms. This parameter does not mean that the device can drive the resistive load up to Driving Capability characteristics. Driving Capability: NHQ035C:300mΩ Von [V] IL [A] 13.5 IL(SC) characteristics IL(SC) specified point NHQ035C: 35A t t VIN IL 30ms

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 31 of 40 May 22, 2015

3.6.11 Measurement condition

Switching waveform of OUT terminal VIN VOUT 90% 10% ton toff 30% 70% dV/dton -dV/dtoff 10% td(on) 90% td(off) 30% 70%

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 32 of 40 May 22, 2015

3.7 Package drawing

µPD166028T1K Datasheet 3. Specification R07DS1162EJ0200 Rev.2.00 Page 33 of 40 May 22, 2015

3.8 Taping information

3.9 Marking information

µPD166028T1K Datasheet 4. Typical characteristics R07DS1162EJ0200 Rev.2.00 Page 34 of 40 May 22, 2015 4. Typical characteristics

µPD166028T1K Datasheet 4. Typical characteristics R07DS1162EJ0200 Rev.2.00 Page 35 of 40 May 22, 2015

µPD166028T1K Datasheet 4. Typical characteristics R07DS1162EJ0200 Rev.2.00 Page 36 of 40 May 22, 2015

µPD166028T1K Datasheet 4. Typical characteristics R07DS1162EJ0200 Rev.2.00 Page 37 of 40 May 22, 2015

µPD166028T1K Datasheet 4. Typical characteristics R07DS1162EJ0200 Rev.2.00 Page 38 of 40 May 22, 2015

µPD166028T1K Datasheet 5. Thermal characteristics R07DS1162EJ0200 Rev.2.00 Page 39 of 40 May 22, 2015 5. Thermal characteristics

µPD166028T1K Datasheet 6. Application example in principle R07DS1162EJ0200 Rev.2.00 Page 40 of 40 May 22, 2015 6. Application example in principle RIN, RSEN, RAN values are in range of 2k to 50kΩ depending microcontroller while R_L value is typically 4kΩ. If necessary to raise HBM tolerated dose, adding resister between OUT terminal and Ground is effective. Resister’s value is typically 100kΩ GND Network recommendation RGND Vbat VCC GND VCC GND Vbat In case of V_loaddump < 35V In case of 35V < V_loaddump < 42V External diode is recommended in order to prevent reverse current toward control logic part at reverse battery condition. Note: If other component is installed to prevent reverse current at reverse battery condition, diode is not required in GND Network. Note: Approx. 1kΩ additional resistor in parallel with the diode is recommended if Vf vaule of the diode is high. External diode and resistor are recommended in order to prevent reverse current toward control logic part at reverse battery condition and limit the current through ZD AZ at load dump condition. 100Ω is recommended as RGND.

All trademarks and registered trademarks are the property of their respective owners. C - 1 Revision History µPD166028T1K Datasheet Rev. Date

Description

1.00 Mar 27, 2014 1-38 1st issue

2.00 May 22, 2015 15 "Device behavior at reverse current conduction during on-state" is added. 24 "Device behavior at small load current conduction" is added.

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