82S147 PHILIPS

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Philips Components-Signetics [Document No 53-0129 82S147 / 82S147A cure. fever | qubit TTL bi 4K-bit TTL bipolar PROM tet towne | ate ran seta DESCRIPTION FEATURES PIN CONFIGURATIONS ‘The 828147 and 82S147A are field- © Address access time: programmable, which means that « NB28147: 6ons max N Package custom pattems are immediately available by following the Signetics ~ N82S147A: 45ns max . q 2 veo Generic | fusing procedure. The © Power dissipation: 625mW/bit typ “ a Ey “ standard devices are supplied with all tnout loading: -100A max outputs at locical Low, Outputs are npvt loading: —100KA m a fry 26 programmed to a logic High level at any ® One Chip Enable input res| fia) as specified address by fusing the Ni-Cr _@ On-chip address decoding of fa) ce link matrix, © No separate fusing pins of [7a] 08 The 828147 and 82S147A include 0s [a [a] o7 on-chip decoding and one Chip Enable ° Fully TTL compatible of fia) os input for ease of memory expansion, ‘© Outputs: 3-State no [i Fa] os and feature 3-State outputs for ‘© Unprogrammed outputs are Low level optimization of word expansion in bused organizations. A Package Ordering information can be foundon APPLICATIONS sa at ao veg the following page. © Prototyping/volume production BLELh] tc [al The 825147 and 82S147A devices are © Sequential controllers Pcs Ore also processed to miliary requirements 6 Microprogramming Pac! [ay ae for operation over the military " : o Ea as temperature range. For spectications _* Hardwire algorthms as Be and ordering information consult the © Control store Signetics Military Data Handbook. oR, © }8 08 fandom logic OPORURCAC) © Code conversion OF GND O8 08 OF BLOCK DIAGRAM doo ‘aopress | 14 LUNES H loEcovER| Mo x noo ao a or 2 or & 05 oO OF ‘ourPuT UNS ' ‘304 ’

Philips Components-Signetics Memory Products Product Specification 4K-bit TTL bipolar PROM (512 x 8) 82S147 / 82S147A

ORDERING INFORMATION

20-Pin Plastic Dual-in-Line 20-Pin Plastic Leaded Chip Carrier ABSOLUTE MAXIMUM RATINGS ee pert tnpaabe rege DC ELECTRICAL CHARACTERISTICS O°C «Tarp < +75°C, 4.75V < Voo< 5.25V SYMBOL TEST CONDITIONS'2 [ min | tye? | max | Vi Low Vv Vw High 20 v Vic Clamp ly = 12m v Output voltage TE= tow Vou Low Jour = 9.6mA v Vou High lout = -2mA v he Low Vix = 0.45V 100 BA I High Vy = 58V 40 BA HiZ state TE = High, Vour = 55V 40 HA TE = High, Vour = 0.5V -40 HA Short circuit! TE = Low, Vour = OV -70 mA TE = High, Voc = 5.0V Cw Vin = 2.0V. pF Cour Vout =2.0V pF NOTES: 1. All voltages with respect to network ground. 2. Positive current is defined as into the terminal referencod 3. Typical values are at Voc = SV, Tare = +25°C. 4. Duration of the short circuit should not exceed 1 second. 5, Measured with all inputs grounded and all outputs open. November 11, 1986 305

Philips Components~Signetics Memory Products Product Specification 4K-bit TTL bipolar PROM (512 x 8) 828147 / 82S147A AC ELECTRICAL CHARACTERISTICS re ta ‘Output Address: 45 tee ‘Output Chip Enable 30, Lo [mt Torin save TT Ts [Tato] m= | NOTES: 4. Typical values are at Voc = SV, Tang = +25°C. 2. Tested at an address cycle time of 1ys. 3. Measured at a delta of 0.5V from Logic Level with Ry = 7509, Re = 7502, C, = 5pF: TEST LOAD CIRCUIT Yoo oa 40 afar vee os az oar oro onde H i o—fas TY | ons ce -Lo co, ONCLUDES SCOPE AND o—* ar Rp JIG CAPACITANCE) os As ove VOLTAGE WAVEFORMS 1304 aooress Wisy w aw te tv 18v —---- w ‘ee ‘eo. c1-08 102 ez “OH an oe ‘Miegune == Ses 0% I0 HO) AG partretars ae reared a SV ness aerwise soci ) November 11, 1986 306 ;