N6001NZ RENESAS | Alldatasheet

Document overview

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Technical content

Features

  • Low on-state resistance RDS (on) = 9.3Ω MAX. (VGS = 10 V, ID = 0.5 A)
  • Low input capacitance Ciss = 215pF TYP. (VDS = 10V, VGS = 0 V)
  • High current ID(DC) = ±1.0 A
  • RoHS Compliant

Ordering Information

Part No. Lead Plating Packing Package N6001NZ-S29-AY ∗1 Pure Sn (Tin) Tube 75 p/tube TO-251 0.3g TYP. Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (TA = 25°C, all terminals are connected) Item Symbol Ratings Unit Drain to Source Voltage (VGS = 0 V) V DSS 600 V Gate to Source Voltage (VDS = 0 V) V GSS ±30 V Drain Current (DC) I D(DC) ±1.0 A Drain Current (pulse) ∗1 I D(pulse) ±4.0 A Total Power Dissipation (TC = 25°C) P T1 20 W Total Power Dissipation (TA = 25°C) P T2 1.0 W Channel Temperature T ch 150 °C Storage Temperature T stg -55 to 150 °C Single Avalanche Current ∗2 I AS 0.8 A Single Avalanche Energy ∗2 E AS 0.4 mJ Thermal Resistance Channel to Case (Drain) Thermal Resistance R th(ch-C) 6.25 °C/W Channel to Ambient Thermal Resistance R th(ch-A) 125 °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Starting Tch = 25°C, RG = 25 Ω, VDD = 150 V, VGS = 20 → 0 V, L = 1mH R07DS1025EC0100 Rev.1.00 Feb 18, 2013

R07DS1025EC0100 Rev.1.00 Page 2 of 7 Feb.18, 2013 Electrical Characteristics (TA = 25°C, all terminals are connected) Item Symbol MIN. TYP. MAX. Unit Test Conditions Zero Gate Voltage Drain Current I DSS 1 μA V DS = 600 V, VGS = 0 V Gate Leakage Current I GSS ±100 nA V GS = ± 30 V, VDS = 0 V Gate to Source Cut-off Voltage V GS(off) 2.0 3.0 4.0 V V DS = 10V, ID = 1mA Forward Transfer Admittance ∗1 | y fs | 0.2 0.7 S V DS = 10 V, ID = 0.5 A Drain to Source On-state Resistance ∗1 RDS(on) 7.0 9.3 Ω V GS = 10 V, ID = 0.5 A Input Capacitance C iss 215 pF VDS = 10 V, Output Capacitance C oss 78 pF VGS = 0 V, Reverse Transfer Capacitance C rss 20 pF f = 1 MHz Turn-on Delay Time t d(on) 9.0 ns VDD = 150 V, ID = 0.5 A, Rise Time t r 4.2 ns VGS = 10 V, Turn-off Delay Time t d(off) 15.8 ns RG = 10 Ω Fall Time t f 23.0 ns Total Gate Charge Q G 7.4 nC VDD = 450 V, Gate to Source Charge Q GS 1.6 nC VGS = 10 V, Gate to Drain Charge Q GD 3.5 nC ID = 1.0 A Body Diode Forward Voltage ∗1 V F(S–D) 0.83 1.5 V IF = 1.0 A, VGS = 0 V Reverse Recovery Time t rr 95 ns Reverse Recovery Charge Q rr 250 nC IF = 1.0 A, VGS = 0 V, di/dt = 100 A/μ s Note: ∗1. Pulsed TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. RL VDD TEST CIRCUIT 2 SWITCHING TIME RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS τ = 1 s Duty Cycle ≤ 1% τ VGS Wave Form VDS Wave Form VGS VDS 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10% μ

R07DS1025EC0100 Rev.1.00 Page 3 of 7 Feb.18, 2013 Typical Characteristics (TA = 25°C) FORWARD BIAS SAFE OPERATING AREA 0.01 0.1 1 10 100 1000 VDS - Drain to Source Voltage-V ID - Drain Current-A ID(DC)=1A 100us RDS(ON) Limited (at VGS=10V) 10ms 1ms Power Dissipation Limited 10us Tc=25℃ Single pulse ID(Pulse)=4A TOTAL POWER DISSIPATION VS. CASE TEMPERATURE 0 25 50 75 100 125 150 175 Tc - Case Temperature - ℃ PT - Total Power Dissipation-W DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 120 0 25 50 75 100 125 150 175 Tc - Case Temperature - ℃ dT-Percentage of Rated Power- % TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 0.01 0.1 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s rth(t) - Transient Thermal Resistance -℃/W Rth(j-a)=125℃/W Rth(j-c)=6.25℃/W Single Pulse

R07DS1025EC0100 Rev.1.00 Page 4 of 7 Feb.18, 2013 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.01 0.1 1 10 I D -Drain Current- A RDS(on) -Drain to Source On-State Resistance- Ω Pulsed VGS=10V VGS=20V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0 4 8 12 16 20 V GS - Gate to Source Voltage - V RDS(on) -Drain to Source On-State Resistance- Ω ID = 1.0A 0.5A Pulsed DRAIN CURRENTS vs. DRAIN TO SOURCE VOLTAGE 0.0 0.5 1.0 1.5 2.0 0 5 10 15 20 V DS - Drain to Source Voltage - V ID -Drain Current- A Pulsed VGS=20V VGS=10V FORWARD TRANSFER CHARACTERISTICS 0.001 0.01 0.1 0246 VGS - Gate to Sour Voltage - V ID - Drain Current-A Tch = 150℃ 75℃ 25℃ -55℃ VDS=10V Pulsed GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE -75 -25 25 75 125 175 T ch -Channel Temperature - ℃ VGS(off) - Gate to Source Cut-off Voltage - V VDS=10V ID=1mA FORWARD TRANSFE ADMITANCE vs. DRAIN CURRENT 0.01 0.1 0.01 0.1 1 10 ID -Drain Current-A | yfs | - Forward Transfer Admitance - S VDS=10V Pulsed Tch=-55℃ 25℃ 75℃ 150℃

R07DS1025EC0100 Rev.1.00 Page 5 of 7 Feb.18, 2013 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE -75 -25 25 75 125 175 Tch -Channel Temperature- ℃ RDS(on) -Drain to Source On-State Resistance- Ω VGS=10V Pulsed ID = 1.0A 0.5A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 1000 0.1 1 10 100 VDS -Drain to Source Voltage - V Ciss, Coss, Crss -Capacitance-pF Ciss Coss Crss VGS=0V f=1MHz SWITCHING CHARASTARISTICS 100 1000 0.1 1 10 ID -Drain Current - A td(on), tr, td(off),tf -Switching Time- n s td(off) tr td(on) tf VDS = 150V VGS = 10V RG = 10Ω DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 200 300 400 500 02468 Q G - Gate Charge - nC VDS - Drain to Source Voltage - V VGS-Gate to Soure Voltage - V ID=1.0A VDD= 450V 300V 150V VDS VGS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 0.01 0.1 100 VF(S-D) -Source to Drain Voltage- V IF -Diode Forward Current- A Pulsed VGS=10V VGS=0V REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 1000 0.1 1 ID -Drain Current- A trr -Reverse Recovery Time-ns di/dt = 100A/μs VGS = 0V

R07DS1025EC0100 Rev.1.00 Page 6 of 7 Feb.18, 2013 Package Drawing (Unit: mm) TO-251 Symbol Package Dimensions Min Max A2 . 1 9 2 . 3 8 B0 . 6 4 0 . 8 9 B1 0.69 0.99 B2 5.23 5.48 C0 . 4 6 0 . 6 1 D5 . 9 1 6 . 2 8 E6 . 2 1 6 . 5 9 G2 . 2 8 T Y P . H0 . 8 9 1 . 2 7 J1 . 0 4 1 . 2 3 L8 . 8 9 9 . 6 5 Symbol Package Dimensions Min Max A2 . 1 9 2 . 3 8 B0 . 6 4 0 . 8 9 B1 0.69 0.99 B2 5.23 5.48 C0 . 4 6 0 . 6 1 D5 . 9 1 6 . 2 8 E6 . 2 1 6 . 5 9 G2 . 2 8 T Y P . H0 . 8 9 1 . 2 7 J1 . 0 4 1 . 2 3 L8 . 8 9 9 . 6 5 12 3 1.Gate 2.Drain 3.Source 4.Fin (Drain) E A B D L H G No Plating J C C No Plating J C C Equivalent Circuit Source Body DiodeGate Drain Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.

All trademarks and registered trademarks are the property of their respective owners. C - 1 Revision History N6001NZ Data Sheet

Description

Rev. Date Page Summary

1.00 Feb 18, 2013 − First Edition Issued

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