JAN2N3902 MICROSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices Qualified Level 2N3902 2N5157 JAN JANTX MAXIMUM RATINGS Ratings Symbol 2N3902 2N5157 Unit Collector - Emitter Voltage V CEO 400 500 Vdc Emitter - Base V oltage V EBO 5.0 6.0 Vdc Collector - Base Voltage V CBO 700 Vdc Base Current IB 2.0 Adc Collector Current IC 3.5 Adc Total Power Dissipation @ T A = +25 0 C (1) @ T C = +75 0 C (2) P T 5.0 100 W W Operating & Storage Te mperature Range T j, T stg - 65 to +200 0 C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance, Junction - to - Case R θJC 1.25 0 C/W 1) Derate linearly 29 mW/ 0 C for T A > +25 0 C 2) Derate linearly 0.8 W/ 0 C for T C > +75 0 C TO-3 (TO-204AA)* *See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector - Emitter Cutoff Current V CE = 325 Vdc 2N3902 V CE = 400 Vdc 2N5157 ICEO 250 250 µAdc Collector - Emit ter Cutoff Current V BE = 1.5 Vdc; V CE = 700 Vdc ICEX 500 µAdc Emitter - Base Cutoff Current V EB = 5.0 Vdc 2N3902 V EB = 6.0 Vdc 2N5157 IEBO 200 200 µAdc ON CHARACTERISTICS(3) Base - Emitter Saturation Voltage I C = 1.0 Adc; I B = 0.1 Adc I C = 3.5 Adc; I B = 0.7 Adc V BE(sat) 1.5 2.0 Vdc Collector - Emitter Saturation Voltage I C = 1.0 Adc; I B = 0.1 Adc I C = 3.5 Adc; I B = 0.7 Adc V CE(sat) 0.8 2.5 Vdc
6 Lake Street, Lawrence, MA 01841
1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 080 3 120101 Page 1 of 2
2N3902, 2N5157 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS(3) (con’t) Forward - Current Transfer Ratio I C = 0.5 Adc; V CE = 5.0 Vdc I C = 1.0 Adc; V CE = 5.0 Vdc I C = 2.5 Adc; V CE = 5.0 Vdc I C = 3.5 Adc; V CE = 5.0 Vdc h FE Collector - Emitter Sustaining Voltage I C = 100 mAdc 2N3902 2N5157 V CEO(sus) 325 400 Vdc DYNAMIC CHARACTERISTICS Small - Signal Short - Circuit Forward Current Transfer Ratio I C = 0.2 Adc; V CE = 10 Vdc, f = 1 MHz h fe 2.5 25 Output Capacitance V CB = 10 Vdc; I E = 0, 100 kHz ≤ f ≤ 1.0 MHz C obo 250 pF SWITCHING CHARACTERISTICS Turn - On Time V CC = 125 Vdc; I C = 1.0 A dc; I B1 = 0.1 Adc ton 0.8 µs Turn - Off Time V CC = 125 Vdc; I C = 1.0 Adc; I B1 = 0.1 Adc; - IB2 = 0.50 Adc toff 1.7 µs SAFE OPERATING AREA DC Tests (continuous) T C = +25 0 C; t ≥ 1.0 s (See Figure 3 of MIL - PRF - 19500/371) Test 1 V CE = 28.6 Vdc, I C = 3.5 Adc Test 2 V CE = 70 Vdc, I C = 1.43 Adc Test 3 V CE = 325 Vdc, I C = 55 mAdc 2N3902 V CE = 400 Vdc, I C = 35 mAdc 2N5157 Switching Tests Load condition C (unclamped inductive load) T C = 25 0 C; duty cycle ≤ 10%; R S = 0.1 Ω (See Figure 4 of MIL - PRF - 19500/371) Test 1 t P = approximately 3 ms (vary to obtain I C) ; R BB1 = 20 Ω ; V BB 1 = 10 Vdc; R BB2 = 3 k Ω ; V BB2 = 1.5 Vdc; V CC = 50 Vdc; I C = 3.5 Adc; L = 60 mH; R = 3 Ω ; R L ≤ 14 Ω . Test 2 t P = approximately 3 ms (vary to obtain I C) ; R BB1 = 100 Ω ; V BB1 = 10 Vdc; R BB2 = 3 k Ω ; V BB2 = 1.5 Vdc; I C = 0.6 Adc V CC = 50 Vdc; L = 200 mH; R = 8 Ω ; R L ≤ 83 Ω . Switching Tests Load condition (clamped inductive load) T C = +25 0 C; duty cycle ≤ 10%. (See Figure 5 of MIL - PRF - 19500/371) Test 1 t P = approximately 30 ms (vary to obtain I C) ; R S = 0.1 Ω ; R BB1 = 20 Ω ; V BB 1 = 10 Vdc; R BB2 = 100 Ω ; V BB2 = 1.5 Vdc; V CC = 50 Vdc; I C = 3.5 Adc; L = 60 mH; R = 3 Ω ; R L ≥ 0 Ω . (A suitable clamping circuit or diode can be used.) Clamp Voltage = 400 +0, - 5 Vdc 2N3902 Clamp Voltage = 500 +0, - 5 Vdc 2N5157 (Clamped voltage must be reached) 3.) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 120101 Page 2 of 2