N3T100 NAINA | Alldatasheet
Document overview
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Technical content
Features
- Low voltage three-phase
- High surge current capability
- Easy construction
- Non-isolated
- Mounting base as common anode Voltage Ratings (T C = 25 OC unless otherwise specified) Parameter Symbol N3T100A30 N3T100A40 Units Maximum repetitive peak reverse voltage VRRM 300 400 V Maximum non-repetitive peak reverse voltage VRSM 360 480 V Maximum repetitive peak off-state voltage VDRM 300 400 V Electrical Characteristics (T C = 25 OC unless otherwise specified) Parameter Conditions Symbol Values Units Average on-state current Single phase, half-wave, 180 0 conduction IT(AV) 100 A R.M.S. on-state current IT(RMS) 157 A On-state surge current half cycle, 50Hz, peak value, non- repetitive ITSM 3500 A I2t required for fusing I2t 61250 A2S Peak gate current IGM 3 A Peak gate voltage (forward) VFGM 10 V Peak gate voltage (reverse) VRGM 5 V Critical rate of rise of on-state current IG = 200mA, TJ=25 0C di/dt 50 A/µs Critical rate of rise of off-state voltage TJ = 150 0C dv/dt 50 V/µs Holding current TJ = 25 0C IH 70 mA Peak on-state voltage TJ = 25 0C VTM 1.20 V Repetitive Peak Reverse Current TJ = 1500C, single phase, half wave IRRM 15 mA Gate Trigger Current TJ = 25 OC, I T = 1A IGT 150 mA Gate Trigger Voltage TJ = 25 OC, I T = 1A VGT 2 V Thermal & Mechanical Specifications (T C = 25 OC unless otherwise specified) Parameter Symbol Values Units Operating junction temperature range TJ -40 to +150 0C Storage temperature range TSTG -40 to +125 0C Thermal resistance, junction to case Rth(JC) 0.30 0C/W Weight W 180 g
Naina Semiconductor Ltd. N3T100
2 D-95, Sector 63, Noida – 201301, India • Tel: 012 0-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com Package Outline (All dimensions in mm) Ordering Table N3T 100 A 40 1 2 3 1 – Half-bridge Thyristor Module 2 - Current Rating = IT(AV) 3 – Voltage = V RRM (Voltage Ratings Table)